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    DIODE D25 N10 R Search Results

    DIODE D25 N10 R Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE D25 N10 R Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IXFN150N10

    Abstract: 150N10
    Text: HiPerFETTM Power MOSFET IXFN 150 N10 VDSS 3 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family 2 4 Preliminary data * 1 Symbol Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C 100 V VDGR T J = 25°C to 150°C; RGS = 1 MΩ 100 V VGS Continuous


    Original     		PDF IXFN150N10 IXFN150N10 150N10

    diode t25 4 k8

    Abstract: diode t25 4 B9 diode t25 4 H9 diode t25 4 k5 diode t25 4 L9 diode AA17 diode t25 4 k6 diode t25 4 g8 diode t25 4 G9 T4 w4 DIODE
    Text: Pin Information For The Stratix EP1S10 Device, ver 3.1 Bank Number B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B1 B1 VREF Bank Pin Name/Function Optional Function s


    Original     		PDF EP1S10 diode t25 4 k8 diode t25 4 B9 diode t25 4 H9 diode t25 4 k5 diode t25 4 L9 diode AA17 diode t25 4 k6 diode t25 4 g8 diode t25 4 G9 T4 w4 DIODE

    Diode D25 N12

    Abstract: diode AA17 diode AA19 diode t25 4 G9 diode t25 4 H9 AA12 diode diode t25 4 L9 diode t25 4 g8 diode t25 4 k8 diode M21
    Text: Pin Information For The Stratix EP1S10 Device, ver 3.3 Bank Number B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B1 B1 B1 B1 B1 B1 B1 B1 B1 B1 B1 B1


    Original     		PDF EP1S10 Diode D25 N12 diode AA17 diode AA19 diode t25 4 G9 diode t25 4 H9 AA12 diode diode t25 4 L9 diode t25 4 g8 diode t25 4 k8 diode M21

    diode t25 4 H9

    Abstract: diode t25 4 L9 diode t25 4 k6 diode t25 4 k8 diode t25 4 G9 diode t25 4 F8 diode t25 4 B9 diode t25 4 g8 diode t25 4 F7 diode t25 4 L8
    Text: Pin Information For The Stratix EP1S10 Device, ver 3.7 Note 2 Bank Number B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B1 B1 B1 B1 B1 B1 B1 B1 B1


    Original     		PDF EP1S10 PT-EP1S10-3 EP1S10F484. diode t25 4 H9 diode t25 4 L9 diode t25 4 k6 diode t25 4 k8 diode t25 4 G9 diode t25 4 F8 diode t25 4 B9 diode t25 4 g8 diode t25 4 F7 diode t25 4 L8

    diode t25 4 k8

    Abstract: diode t25 4 L9 diode t25 4 g8 diode t25 4 G9 diode t25 4 k6 diode t25 4 B9 Diode D25 N12 diode t25 4 d7 diode t25 4 j6 diode t25 4 F6
    Text: Pin Information For The Stratix EP1S20 Device, ver 3.1 Bank Number B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2


    Original     		PDF EP1S20 diode t25 4 k8 diode t25 4 L9 diode t25 4 g8 diode t25 4 G9 diode t25 4 k6 diode t25 4 B9 Diode D25 N12 diode t25 4 d7 diode t25 4 j6 diode t25 4 F6

    diode t25 4 H9

    Abstract: diode t25 4 B8 diode t25 4 G9 diode t25 4 k6 diode t25 4 H8 diode t25 4 F8 diode t25 4 e9 diode t25 4 e8 diode t25 4 g8 diode t25 4 L9
    Text: Pin Information For The Stratix EP1S25 Device, ver 3.6 Bank Number B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2


    Original     		PDF EP1S25 PT-EP1S25-3 EP1S25. diode t25 4 H9 diode t25 4 B8 diode t25 4 G9 diode t25 4 k6 diode t25 4 H8 diode t25 4 F8 diode t25 4 e9 diode t25 4 e8 diode t25 4 g8 diode t25 4 L9

    diode t25 4 H9

    Abstract: diode t25 4 L9 diode t25 4 G9 diode t25 4 j3 diode t25 4 k8 diode t25 4 k6 diode AA19 diode T25 4 F8 diode t25 4 g8 diode t25 4 L5
    Text: Pin Information For The Stratix EP1S20 Device, ver 3.6 Note 2 Bank Number VREF Bank Pin Name/Function Optional Function(s) B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 VREF0B2 VREF0B2 VREF0B2 VREF0B2 VREF0B2


    Original     		PDF EP1S20 RX32p RX32n TX32p TX32n RX31p PT-EP1S20-3 EP1S20. diode t25 4 H9 diode t25 4 L9 diode t25 4 G9 diode t25 4 j3 diode t25 4 k8 diode t25 4 k6 diode AA19 diode T25 4 F8 diode t25 4 g8 diode t25 4 L5

    a562 transistor

    Abstract: transistor A562 d2118 DSP1c D61 6A-1 D2730 transistor D1812 H3C1 A966 transistor power 22E
    Text: Freescale Semiconductor User’s Guide PTKIT8101UG Rev. 1, 9/2005 MSC8101 Packet Telephony Farm Card MSC8101PFC The MSC8101 DSP subsystem on the MSC8101 packet telephony farm card (MSC8101PFC) performs the signal processing functions for voice, fax, and modem data


    Original     		PDF PTKIT8101UG MSC8101 MSC8101PFC) MCS8101 MSC8101PFC MSC8101 a562 transistor transistor A562 d2118 DSP1c D61 6A-1 D2730 transistor D1812 H3C1 A966 transistor power 22E

    w10 mic package bridge rectifier

    Abstract: smd diode B64 ferrite core tdk pc30 DIN41612 connectors ERNI bob smith termination POE bob smith termination schematic molex tdk ferrite pc30 MF3 IC D41 schottky barrier diode b22 Flash SIMM 80 programmer
    Text: MSC8101 Application Development System User’s Manual Motorola reserves the right to make changes without further notice to any products herein to improve reliability, function or design. Motorola does not assume any liability arising out of the application or use of any product or circuit described


    Original     		PDF MSC8101 MCS8101ADSUM/D w10 mic package bridge rectifier smd diode B64 ferrite core tdk pc30 DIN41612 connectors ERNI bob smith termination POE bob smith termination schematic molex tdk ferrite pc30 MF3 IC D41 schottky barrier diode b22 Flash SIMM 80 programmer

    LSISAS1068

    Abstract: LSISASx12 LSI Logic SAS controller chip I2C sas SFF8485 PAR64 SFF-8485 TX6 RX6 JZ02-000015-00 M4G-21
    Text: LSISAS1068 8-Port, 3 Gbit/s Serial Attached SCSI Controller Datasheet Version 2.0 The LSISAS1068 is an eight, port 3.0 Gbit/s SAS/SATA controller that is compliant with the Fusion-MPT architecture, provides a PCI-X interface, and supports Integrated RAID.


    Original     		PDF LSISAS1068 LSISASx12 LSI Logic SAS controller chip I2C sas SFF8485 PAR64 SFF-8485 TX6 RX6 JZ02-000015-00 M4G-21

    diode t25 4 B9

    Abstract: AG27 diode AG14 diode t25 4 G9 diode ah18 diode t25 4 L9 aj29 diode AC31 diode AG14 diode t25 4 L5
    Text: Pin Information For The Stratix EP1S40 Device, ver 3.6 Bank Number B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 VREF Bank Pin Name/Function VREF0B2 VREF0B2 VREF0B2 VREF0B2 VREF0B2 VREF0B2 VREF0B2 VREF0B2 VREF0B2 VREF0B2


    Original     		PDF EP1S40 PT-EP1S40-3 F1020 F1508 EP1S30 EP1S40. diode t25 4 B9 AG27 diode AG14 diode t25 4 G9 diode ah18 diode t25 4 L9 aj29 diode AC31 diode AG14 diode t25 4 L5

    diode t25 4 k8

    Abstract: AE21 ARRAY DIODE B956 F1020 k16 a21 AF27 diode t25 4 L8 ag23 diode ab24 af30 diode
    Text: Pin Information For The Stratix EP1S30 Device, ver 3.6 Bank Number B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 VREF Bank Pin Name/Function VREF0B2 VREF0B2 VREF0B2 VREF0B2 VREF0B2 VREF0B2 VREF0B2 VREF0B2 VREF0B2 VREF0B2


    Original     		PDF EP1S30 PT-EP1S30-3 F1020 EP1S40 EP1S30. diode t25 4 k8 AE21 ARRAY DIODE B956 F1020 k16 a21 AF27 diode t25 4 L8 ag23 diode ab24 af30 diode

    LH7A400

    Abstract: AC97 ARM922T ISO7816
    Text: LH7A400 32-Bit System-on-Chip Preliminary Data Sheet FEATURES • Three Programmable Timers • ARM922T Core: – 32-bit ARM9TDMI™ RISC Core – 16KB Cache: 8KB Instruction Cache and 8KB Data Cache – MMU Windows CE Enabled • Three UARTs – Classic IrDA (115 kbit/s)


    Original     		PDF LH7A400 32-Bit ARM922TTM ISO7816) SMA01012 LH7A400 AC97 ARM922T ISO7816

    SM320VC33

    Abstract: No abstract text available
    Text: SM320VC33−EP DIGITAL SIGNAL PROCESSOR SGUS037C - AUGUST 2002 - REVISED JANUARY 2003 D Controlled Baseline D D D D D D D D D D D † - One Assembly/Test Site, One Fabrication Site Extended Temperature Performance of -40 °C to 100°C A Suffix , and -55 °C to 125°C (M Suffix)


    Original     		PDF SM320VC33â SGUS037C SM320VC33-120EP 17-ns SM320VC33-150EP 13-ns SM320VC33

    SM320VC33

    Abstract: No abstract text available
    Text: SM320VC33−EP DIGITAL SIGNAL PROCESSOR SGUS037C - AUGUST 2002 - REVISED JANUARY 2003 D Controlled Baseline D D D D D D D D D D D † - One Assembly/Test Site, One Fabrication Site Extended Temperature Performance of -40 °C to 100°C A Suffix , and -55 °C to 125°C (M Suffix)


    Original     		PDF SM320VC33-EP SGUS037C SM320VC33-120EP 17-ns SM320VC33-150EP 13-ns SM320VC33

    SM320VC33

    Abstract: No abstract text available
    Text: SM320VC33−EP DIGITAL SIGNAL PROCESSOR SGUS037C - AUGUST 2002 - REVISED JANUARY 2003 D Controlled Baseline D D D D D D D D D D D † - One Assembly/Test Site, One Fabrication Site Extended Temperature Performance of -40 °C to 100°C A Suffix , and -55 °C to 125°C (M Suffix)


    Original     		PDF SM320VC33-EP SGUS037C SM320VC33-120EP 17-ns SM320VC33-150EP 13-ns SM320VC33

    SM320VC33

    Abstract: No abstract text available
    Text: SM320VC33-EP DIGITAL SIGNAL PROCESSOR SGUS037C - AUGUST 2002 - REVISED JANUARY 2003 D Controlled Baseline D D D D D D D D D D D † - One Assembly/Test Site, One Fabrication Site Extended Temperature Performance of -40°C to 100°C A Suffix , and -55°C to 125°C (M Suffix)


    Original     		PDF SM320VC33-EP SGUS037C SM320VC33-120EP 17-ns SM320VC33-150EP 13-ns SM320VC33

    SM320VC33

    Abstract: No abstract text available
    Text: SM320VC33-EP DIGITAL SIGNAL PROCESSOR SGUS037C - AUGUST 2002 - REVISED JANUARY 2003 D Controlled Baseline D D D D D D D D D D D † - One Assembly/Test Site, One Fabrication Site Extended Temperature Performance of -40°C to 100°C A Suffix , and -55°C to 125°C (M Suffix)


    Original     		PDF SM320VC33-EP SGUS037C SM320VC33-120EP 17-ns SM320VC33-150EP 13-ns SM320VC33

    SM320VC33

    Abstract: No abstract text available
    Text: SM320VC33-EP DIGITAL SIGNAL PROCESSOR SGUS037C - AUGUST 2002 - REVISED JANUARY 2003 D Controlled Baseline D D D D D D D D D D D † - One Assembly/Test Site, One Fabrication Site Extended Temperature Performance of -40°C to 100°C A Suffix , and -55°C to 125°C (M Suffix)


    Original     		PDF SM320VC33-EP SGUS037C SM320VC33-120EP 17-ns SM320VC33-150EP 13-ns SM320VC33

    SM320VC33

    Abstract: No abstract text available
    Text: SM320VC33-EP DIGITAL SIGNAL PROCESSOR SGUS037C - AUGUST 2002 - REVISED JANUARY 2003 D Controlled Baseline D D D D D D D D D D D † - One Assembly/Test Site, One Fabrication Site Extended Temperature Performance of -40°C to 100°C A Suffix , and -55°C to 125°C (M Suffix)


    Original     		PDF SM320VC33-EP SGUS037C SM320VC33-120EP 17-ns SM320VC33-150EP 13-ns SM320VC33

    SM320VC33

    Abstract: No abstract text available
    Text: SM320VC33-EP DIGITAL SIGNAL PROCESSOR SGUS037C - AUGUST 2002 - REVISED JANUARY 2003 D Controlled Baseline D D D D D D D D D D D † - One Assembly/Test Site, One Fabrication Site Extended Temperature Performance of -40°C to 100°C A Suffix , and -55°C to 125°C (M Suffix)


    Original     		PDF SM320VC33-EP SGUS037C SM320VC33-120EP 17-ns SM320VC33-150EP 13-ns SM320VC33

    SM320VC33

    Abstract: No abstract text available
    Text: SM320VC33−EP DIGITAL SIGNAL PROCESSOR SGUS037C - AUGUST 2002 - REVISED JANUARY 2003 D Controlled Baseline D D D D D D D D D D D † - One Assembly/Test Site, One Fabrication Site Extended Temperature Performance of -40 °C to 100°C A Suffix , and -55 °C to 125°C (M Suffix)


    Original     		PDF SM320VC33-EP SGUS037C SM320VC33-120EP 17-ns SM320VC33-150EP 13-ns SM320VC33

    SM320VC33

    Abstract: No abstract text available
    Text: SM320VC33-EP DIGITAL SIGNAL PROCESSOR SGUS037C - AUGUST 2002 - REVISED JANUARY 2003 D Controlled Baseline D D D D D D D D D D D † - One Assembly/Test Site, One Fabrication Site Extended Temperature Performance of -40°C to 100°C A Suffix , and -55°C to 125°C (M Suffix)


    Original     		PDF SM320VC33-EP SGUS037C SM320VC33-120EP 17-ns SM320VC33-150EP 13-ns SM320VC33

    Untitled

    Abstract: No abstract text available
    Text: J □IXYS p VDSS ^D 25 IXTH/IXTM 67 N10 100 V IXTH/IXTM 75 N10 100 V M e g a M O S F E T 67 A 75 A D S on 25 m£2 20 mß N-Channel Enhancement Mode Symbol Test Conditions V DSS T j = 25°C to 150°C 100 V vDGR T j = 25 °C to 150°C; RGS = 1 Mi2 100 V


    OCR Scan     		PDF 67N10 75N10 O-204 O-204 4bflb22b