Untitled
Abstract: No abstract text available
Text: MegaMOS FET IXTH 14 N80 V DSS I D25 R DS on 800 V 14 A 0.70 n N-Channel Enhancement Mode Preliminary data Symbol Maximum Ratings Test Conditions Tj = 25°C to 150°C 800 V V DGR Td = 25 °C to 150°C; RGS= 1 Mfi 800 V Continuous +20 V Transient ±30 V >
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O-247
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IXYS DS 145
Abstract: No abstract text available
Text: MegaMOSTMFET IXTH 14 N80 VDSS = 800 V I D25 = 14 A RDS on = 0.70 Ω N-Channel Enhancement Mode Preliminary data Symbol Test Conditions Maximum Ratings V DSS TJ = 25°C to 150°C 800 V V DGR TJ = 25°C to 150°C; RGS = 1 MΩ 800 V V GS Continuous ±20 V
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O-247
IXYS DS 145
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Untitled
Abstract: No abstract text available
Text: mm T % r XYS Standard Power MOSFET v DSS IXTH/IXTM 6 N80 800 V IXTH/IXTM 6 N80> 800 V p ^D25 DS on 6A 6A 1.8 ß 1.4 Q N-Channel Enhancement Mode Symbol Test Conditions V DSS Tj = 25 °C to 150°C 800 V v DGR Maximum Ratings T.J = 25°C to 150°C;* RGS„ = 1 MSi
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O-247
O-204
O-247
IXTH6N80A
IXTM6N80A
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MOSFET 11N80
Abstract: 11N80 MOSFET 14n80 ns800 13n80
Text: IXFH 11/13/14/15 N80 IXFM 11/13/14/15 N80 nixYS H iP e r F E T “ P o w e r M O S F E T IXFU/IXFM IXFH/IXFM IXFH/IXFM IXFH/IXFM N-Channel Enhancement Mode High dv/dt, Low t^, HDMOS Family 11N80 13N80 14N80 15N80 Symbol Test Conditions VDSS VDGR Tj = 25°C to 150°C
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11N80
13N80
14N80
15N80
MOSFET 11N80
MOSFET 14n80
ns800
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7N80
Abstract: No abstract text available
Text: HiPerFETTM Power MOSFETs IXFH 7 N80 VDSS = 800 V IXFM 7 N80 ID cont = 7 A RDS(on) = 1.4 Ω trr = 250 ns N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Symbol Test Conditions VDSS T J = 25°C to 150°C 800 V VDGR T J = 25°C to 150°C; RGS = 1 MΩ
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7N80
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11N80
Abstract: 13N80 IXFH13N80
Text: HiPerFETTM Power MOSFETs IXFH/IXFM 11 N80 IXFH/IXFM 13 N80 Symbol Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C 800 V VDGR T J = 25°C to 150°C; RGS = 1 MΩ 800 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 T C = 25°C 11N80 13N80 11 13
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11N80
13N80
11N80
13N80
IXFH13N80
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MOSFET 11N80
Abstract: 11n80 MOSFET 15N80 MOSFET 13N80 13n80 MOSFET 11N80 Data sheet 14N80 15N80 D-68623 N-Channel MOSFETs
Text: IXFH 11/13/14/15 N80 IXFM 11/13/14/15 N80 HiPerFET Power MOSFET TM IXFH/IXFM 11N80 IXFH/IXFM 13N80 IXFH/IXFM 14N80 IXFH/IXFM 15N80 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ
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11N80
13N80
14N80
15N80
MOSFET 11N80
11n80
MOSFET 15N80
MOSFET 13N80
13n80
MOSFET 11N80 Data sheet
14N80
15N80
D-68623
N-Channel MOSFETs
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4835 mosfet
Abstract: 6n80a
Text: VDSS Standard Power MOSFET D ^025 IXTH/IXTM 6 N80 800 V IXTH/IXTM 6 N80A 800 V DS on 6A 6A 1.8 Q 1.4 Q N-Channel Enhancement Mode Symbol Test Conditions V * OSS T j = 25°C to 150°C 800 V Tj = 25°C to 150°C; RGS = 1 MQ 800 V Vos Continuous ±20 V VGSM
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O-247
O-204
O-204
O-247
C2-62
4835 mosfet
6n80a
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11n80
Abstract: No abstract text available
Text: HiPerFET Power MOSFETs ixfh/ixfm 11 nso IXFH/IXFM13 N80 Symbol Test Conditions VOSS Tj = 25°C to 150°C Maximum Ratings 800 V Voan Tj = 25°C to 150°C; R as = 1 MQ 800 V VGS V QSM Continuous T ransient ±20 ±30 V V U Tc -. 25 :,C 11N80 13N80 11 13 A
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IXFH/IXFM13
11N80
13N80
13N80
O-247
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6n80
Abstract: N80A D-68623 IXTM6N80A
Text: VDSS Standard Power MOSFET IXTH/IXTM 6 N80 800 V IXTH/IXTM 6 N80A 800 V ID25 6A 6A RDS on 1.8 Ω 1.4 Ω N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 800 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 800 V V GS
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O-247
O-204
O-204
O-247
6n80
N80A
D-68623
IXTM6N80A
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5SHX26L4520
Abstract: tc 106-10 5SHX 26L4520 IGCT thyristor ABB DIODE 1439
Text: VDRM ITGQM ITSM V T0 rT VDC = = = = = = 4500 2200 17x103 1.8 0.533 2800 V A A V m V Reverse Conducting Integrated Gate-Commutated Thyristor 5SHX 26L4520 Doc. No. 5SYA1251-00 Feb. 12 • High snubberless turn-off rating Optimized for medium frequency
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26L4520
5SYA1251-00
CH-5600
5SHX26L4520
tc 106-10
5SHX 26L4520
IGCT thyristor ABB
DIODE 1439
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IGCT thyristor ABB
Abstract: IGCT
Text: VDRM ITGQM ITSM V T0 rT VDC = = = = = = 5500 1800 18x103 1.9 0.9 3300 V A A V m V Reverse Conducting Integrated Gate-Commutated Thyristor 5SHX 19L6020 Doc. No. 5SYA1250-00 Feb. 12 • High snubberless turn-off rating Optimized for medium frequency
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19L6020
5SYA1250-00
CH-5600
IGCT thyristor ABB
IGCT
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86A-5163
Abstract: PWM controller for ZVS half-bridge optocoupler PC817 l6591 AHB ZVS PC817 optocoupler sharp optocoupler PC817 AHB transformer 1754.0004 Magnetica SMD optocoupler IC PC817 DIODE D28
Text: AN2852 Application note EVL6591-90WADP: 90 W AC-DC asymmetrical half-bridge adapter using L6591 and L6563 Introduction This document describes the characteristics and performance of a 90 W wide range input AC-DC adapter based on asymmetrical half-bridge topology AHB .
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AN2852
EVL6591-90WADP:
L6591
L6563
L6563
L6591,
EVL6591-90WAand
86A-5163
PWM controller for ZVS half-bridge
optocoupler PC817
AHB ZVS
PC817 optocoupler
sharp optocoupler PC817
AHB transformer 1754.0004 Magnetica
SMD optocoupler IC PC817
DIODE D28
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w10 mic package bridge rectifier
Abstract: smd diode B64 ferrite core tdk pc30 DIN41612 connectors ERNI bob smith termination POE bob smith termination schematic molex tdk ferrite pc30 MF3 IC D41 schottky barrier diode b22 Flash SIMM 80 programmer
Text: MSC8101 Application Development System User’s Manual Motorola reserves the right to make changes without further notice to any products herein to improve reliability, function or design. Motorola does not assume any liability arising out of the application or use of any product or circuit described
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MSC8101
MCS8101ADSUM/D
w10 mic package bridge rectifier
smd diode B64
ferrite core tdk pc30
DIN41612 connectors ERNI
bob smith termination POE
bob smith termination schematic molex
tdk ferrite pc30
MF3 IC D41
schottky barrier diode b22
Flash SIMM 80 programmer
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35L4520
Abstract: IGCT high voltage
Text: VDRM ITGQM ITSM V T0 rT VDC = = = = = = 4500 4000 32x103 1.4 0.325 2800 V A A V m V Asymmetric Integrated GateCommutated Thyristor 5SHY 35L4520 Doc. No. 5SYA1248-00 Feb. 12 • High snubberless turn-off rating Optimized for medium frequency High electromagnetic immunity
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35L4520
5SYA1248-00
CH-5600
35L4520
IGCT high voltage
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35L4522
Abstract: high power igct abb
Text: VDRM ITGQM ITSM V T0 rT VDC = = = = = = 4500 4000 35x103 1.15 0.21 2800 V A A V m V Asymmetric Integrated GateCommutated Thyristor 5SHY 35L4522 Doc. No. 5SYA1249-00 Feb.12 • High snubberless turn-off rating Optimizedfor low frequency High electromagnetic immunity
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35L4522
5SYA1249-00
CH-5600
35L4522
high power igct abb
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HFBR-1528Z
Abstract: A125 B125 HFBR-2521Z MTA-156 IGCT thyristor current max igct abb 40L4511
Text: VDRM ITGQM ITSM V T0 rT VDC = = = = = = 4500 3600 28x103 1.7 0.454 2800 V A A V m V Asymmetric Integrated GateCommutated Thyristor 5SHY 40L4511 Doc. No. 5SYA1252-00 March 11 • High snubberless turn-off rating Optimized for medium frequency High electromagnetic immunity
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40L4511
5SYA1252-00
CH-5600
HFBR-1528Z
A125
B125
HFBR-2521Z
MTA-156
IGCT thyristor current max
igct abb
40L4511
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"coil capacitance"
Abstract: No abstract text available
Text: HV9923 3-Pin Switch-Mode LED Lamp Driver IC Features General Description ► ► ► ► The HV9923 is a pulse width modulated PWM highefficiency LED driver control IC. It allows efficient operation of LED strings from voltage sources ranging up to 400VDC.
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HV9923
85-264VAC
400VDC.
O-243AA
OT-89)
O-243,
"coil capacitance"
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HV9921
Abstract: "coil capacitance"
Text: HV9921 3-Pin Switch-Mode LED Lamp Driver IC Features General Description ► ► ► ► The HV9921 is a pulse width modulated PWM highefficiency LED driver control IC. It allows efficient operation of LED strings from voltage sources ranging up to 400VDC. The
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HV9921
85-264VAC
400VDC.
HV9921.
O-243AA
OT-89)
O-243,
"coil capacitance"
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"coil capacitance"
Abstract: HV9922
Text: HV9922 3-Pin Switch-Mode LED Lamp Driver IC Features General Description ► ► ► ► The HV9922 is a pulse width modulated PWM highefficiency LED driver control IC. It allows efficient operation of LED strings from voltage sources ranging up to 400VDC. The
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HV9922
85-264VAC
400VDC.
HV9922.
O-243AA
OT-89)
O-243,
"coil capacitance"
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b0912
Abstract: hv9923 HV9923N3-G HV9923N8-G LINEAR REGULATOR sot-89 ECQ-E4154KF LWE67C MUR160 rs flip-flop IC 7400
Text: HV9923 3-Pin Switch-Mode LED Lamp Driver IC Features General Description ► ► ► ► The HV9923 is a pulse width modulated PWM highefficiency LED driver control IC. It allows efficient operation of LED strings from voltage sources ranging up to 400VDC.
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HV9923
HV9923
400VDC.
264VAC
B091208
b0912
HV9923N3-G
HV9923N8-G
LINEAR REGULATOR sot-89
ECQ-E4154KF
LWE67C
MUR160
rs flip-flop IC 7400
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mosfet 4496
Abstract: HV9922 HV9921 HV9921 DATASHEET HV9923N8-G HV9921N3-G HV9923 rs flip-flop IC 7400
Text: HV9921/HV9922/HV9923 Initial Release 3-Pin Switch-Mode LED Lamp Driver ICs Features Constant Output Current: o HV9921 – 20mA o HV9922 – 50mA o HV9923 – 30mA Universal 85-264VAC Operation Fixed OFF-Time Buck Converter Internal 500V Power MOSFET Applications
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HV9921/HV9922/HV9923
HV9921
HV9922
HV9923
85-264VAC
HV9921/22/23
400VDC.
O-243
OT-89)
mosfet 4496
HV9922
HV9921
HV9921 DATASHEET
HV9923N8-G
HV9921N3-G
HV9923
rs flip-flop IC 7400
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Untitled
Abstract: No abstract text available
Text: HV9921/HV9922/HV9923 Initial Release 3-Pin Switch-Mode LED Lamp Driver ICs Features Constant Output Current: o HV9921 – 20mA o HV9922 – 50mA o HV9923 – 30mA Universal 85-264VAC Operation Fixed OFF-Time Buck Converter Internal 500V Power MOSFET Applications
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HV9921/HV9922/HV9923
HV9921
HV9922
HV9923
85-264VAC
HV9921/22/23
400VDC.
HV9921,
O-243
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b0406
Abstract: LWE67C MARKING sihv triac q HV9923
Text: Supertex inc. HV9923 3-Pin Switch-Mode LED Lamp Driver IC Features General Description ►► ►► ►► ►► The HV9923 is a pulse width modulated PWM highefficiency LED driver control IC. It allows efficient operation of LED strings from voltage sources ranging up to 400VDC.
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265VAC
HV9923
HV9923
400VDC.
B040611
b0406
LWE67C
MARKING sihv
triac q
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