RLT430-50CMG
Abstract: No abstract text available
Text: RLT430-50CMG Co m p li es w ith R o H S 20 02/ 95 / W E d ir ec t i ve Description RLT430-50CMG is an Violet Laser Diode emitting at 430 nm with rated output power of 50 mW CW at room temperature, in standard 5.6mm TO package. Maximum Ratings Parameter Symbol
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RLT430-50CMG
RLT430-50CMG
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RLT390-50CMG
Abstract: No abstract text available
Text: RLT390-50CMG Co m p li es w ith R o H S 20 02/ 95 / W E d ir ec t i ve Description RLT390-50CMG is an Violet Laser Diode emitting at 390 nm with rated output power of 50 mW CW at room temperature, in standard 5.6mm TO package. Maximum Ratings Parameter Symbol
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RLT390-50CMG
RLT390-50CMG
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RLT395-50CMG
Abstract: No abstract text available
Text: RLT395-50CMG Co m p li es w ith R o H S 20 02/ 95 / W E d ir ec t i ve Description RLT395-50CMG is an Violet Laser Diode emitting at 395 nm with rated output power of 50 mW CW at room temperature, in standard 5.6mm TO package. Maximum Ratings Parameter Symbol
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RLT395-50CMG
RLT395-50CMG
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RLT405-50CMG
Abstract: No abstract text available
Text: RLT405-50CMG Co m p li es w ith R o H S 20 02/ 95 / W E d ir ec t i ve Description RLT405-50CMG is an Violet Laser Diode emitting at 405 nm with rated output power of 50 mW CW at room temperature, in standard 5.6mm TO package. Maximum Ratings Parameter Symbol
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RLT405-50CMG
RLT405-50CMG
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RLT410-50CMG
Abstract: No abstract text available
Text: RLT410-50CMG Co m p li es w ith R o H S 20 02/ 95 / W E d ir ec t i ve Description RLT410-50CMG is an Violet Laser Diode emitting at 410 nm with rated output power of 50 mW CW at room temperature, in standard 5.6mm TO package. Maximum Ratings Parameter Symbol
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RLT410-50CMG
RLT410-50CMG
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1N1743
Abstract: IN5234 IN5008 1N4202 zener diode 1N PH 48 diode 1n1418 1NS232 zener diode c51 ph 1n587 1N4465
Text: ZENER DIODE/RECTIFIER CROSS REFERENCE CHART Containing all JE D E C registered Zener diodes. This popular reference chart contains highlight information on all JE D E C registered Zener diode and rectifier types as well as Microsemi types. The following Codes are used:
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1N225
1N2260)
1N227
1N228
1N229
1N230O)
1N231d)
1N232
BZX83
BZX97
1N1743
IN5234
IN5008
1N4202
zener diode 1N PH 48
diode 1n1418
1NS232
zener diode c51 ph
1n587
1N4465
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20CS04FM
Abstract: No abstract text available
Text: SEC 20A SHOTTKY BARRIER DIODE MODULE aHn N "m 20CS04FM OUTLINE DRAWING UNIT: mm 20CS04FM is a isolated type shottkey barrier diode centertap module o f w hich o u tp u t current is 20A. FEATURES * Low forw ard voltage drop. * Very fast recovery tim e. Isolated type.
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20CS04FM
20CS04FM
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20CS04M
Abstract: 20A shottky diode
Text: NEC 20A SHOTTKY BARRIER DIODE MODULE ELECTHO« DEVICE 20CS04M 20CS04M is a s h o ttk y barrier diode centertap module o f w hich o u tp u t current is 20A. OUTLINE DRAWING Unit: mm FEATURES • Low forw ard voltage drop. • • V ery fast recovery tim e.
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20CS04M
20CS04M
20A shottky diode
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gyrator
Abstract: stabiliser circuit diagram preamplifier AGC remote MV601 SL486 3055-1
Text: GEC P L E S S E Y I S E M I C O N D U C T O R S ! 3055-1.0 SL486 INFRA RED REMOTE CONTROL PREAMPLIFIER The SL486 is a high gain preamplifier designed to form an interface between an infra-red receiving diode and the digital input of remote control receiving circuits. The device
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SL486
SL486
MV601
MV601
gyrator
stabiliser circuit diagram
preamplifier AGC remote
3055-1
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RK-71
Abstract: No abstract text available
Text: Bulletin 127132 rev. D 09/97 International lO R Rectifier i r k .71 .91 s e r i e s THYRISTOR/DIODE and NEWADD-A-pak Power Modules , THYRISTOR/THYRISTOR Features • Electrically isolated: DBC base plate ■ 3500 V RMg isolating voltage I Standard JED EC package
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ULE78996
RK-71
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Untitled
Abstract: No abstract text available
Text: Bulletin 12066 rev. B 09/94 International i ö r Rectifier SD303C.C FAST RECOVERY DIODES s e r ie s Hockey Puk Version Features • High power FAST recovery diode series ■ 1.0 to 2.0 fis recovery tim e ■ High voltage ratings up to 2500V ■ High current ca pability
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SD303C.
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2N2222 motorola
Abstract: RECTIFIER DIODES Motorola
Text: MOTOROLA Order this document by MBRF1045/D SEMICONDUCTOR TECHNICAL DATA SWITCHMODE S ch o ttky Pow er R e c tifie r M BRF1045 The S W IT C H M O D E Power Rectifier employs the Schottky Barrier principle in a large area m etal-to-silico n power diode. S ta te -o f-th e -a rt geom etry features
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MBRF1045/D
2N2222 motorola
RECTIFIER DIODES Motorola
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westcode sw
Abstract: No abstract text available
Text: WESTCODE SEMICONDUCTORS £^ d*c« Capsule Rectifier Diode C o n s is ts o f a d iffu s e d s ilic o n e le m e n t m o u n te d in a n h e rm e tic c e ra m ic c o ld w e ld e d c a p s u le . A v a ila b le in in d u s try s ta n d a rd a n d th in h o u s in g s .
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--55K/W
westcode sw
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B85 diode
Abstract: DIODE B89 IRGPC50KD2
Text: 09/01/94 1 1 ;IS i 57 I n t e r n a t 'I R e c tifie r - > Product In fo rn ai ion Page 002 P D - 9.1123 International S Rectifier IRGPC50KD2 Short Circuit Rated UHraFasl CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFASI SOF T RECOVERY DIODE Features
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IRGPC50KD2
-10jj3
O-247AC
B85 diode
DIODE B89
IRGPC50KD2
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60HQ100
Abstract: JANTX1N6392
Text: International Government and Space liQ R lR e c t i f i e r Schottky Diode Hermetic Packages 8-60 Amps Case Part Number VRRM V 'F(AV) @ (A) Tc •f (AV) @ t c VFM @ >FM 25°C(V) (C) Outline !r M @ v RWM 25°C(mA) Max. Tj Number (1) 5EQ100 8EQ045 100 45 8
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5EQ100
8EQ045
15CLQ100
20CLQ045
30FQ045
1N6391
JAN1N6391
JANTX1N6391
JANTXV1N6391
00-203AA
60HQ100
JANTX1N6392
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647c
Abstract: DBA20E DBA20 DBA20B DBA20C Scans-0093209
Text: Ordering number : EN647C _ D B A 20 N 0.647C SA\YO D iffused J u n c t i o n T y p e Silicon Diode 2.0A Single-Phase Bridge Rectifier I F e a tu re s • P la s tic m olded s tr u c t u r e • G la ss p a s s iv a ti o n for hig h re lia b il ity
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EN647C
DBA20B
DBA20C
DBA20E
647c
DBA20
DBA20B
Scans-0093209
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M54581P
Abstract: No abstract text available
Text: M IT S U B IS H I BIPOLAR DIGITAL ICs ! M54581P 8 -U N IT SOOmA SOURCE T Y P E DARLINGTON TR A N S ISTO R ARRAY W IT H C L A M P DIODE DESCRIPTION PIN CONFIGURATION TOP VIEW rh e M 5 4 5 8 1 P , 8 -c h a n n e l source driver, consists of 8 NPN and 8 P N P source ty p e darlington transistors co n n ec te d to
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M54581P
M54581P
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UCU20C16
Abstract: CK200 NIHON PULSE
Text: # y 20A 160V 30ns F^^E-y Fast Recovery Cathode common Similar to TO-263 UCU20C16 Nihon Inter Electronics Corporation Specification. mm izmmyy =*yv'i Diffusion Type Silicon Diode Application High Frequency Rectification Ü x ^ Æ .fê ' frd MAXIMUM RATINGS Ta=25°C: Unless otherwise specified
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O-263
UCU20C16
c40-3
UL94V-0
UCU20Crj
UCU20C16
CK200
NIHON PULSE
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30120CC
Abstract: No abstract text available
Text: RHRG30120CC fJi HARRIS S E M I C O N D U C T O R 30A, 1200V Hyperfast Dual Diode Aprii 1995 Features Package • Hyperfast with Soft Recovery . <65ns • Operating Tem perature. +175°C • Reverse V oltage. .1200V JEDEC STYLE TO-247
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RHRG30120CC
O-247
TA49041)
RHRG30120CC
M004I
30120CC
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TIS43
Abstract: equivalent of transistor bc214 BF257 Texas equivalent of transistor bc212 bc 214 2N696 TEXAS INSTRUMENTS Q2T2222 TIS70 BFR40 kd 2060 transistor BF195 equivalent
Text: The Transistor and Diode Data Book for Design Engineers Volume II Northern European Edition IMPORTANT NOTICES Texas Instrum ents Ltd ., reserves the rig h t to make changes at any tim e in order to improve design and to supply the best p ro d u c t possible.
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2S301
BS9300-C-598
2S305
BS9300-C-366
2S307
2S322
CV7396
BS9300-C-396
CV7647
BS9300-C-647
TIS43
equivalent of transistor bc214
BF257 Texas
equivalent of transistor bc212 bc 214
2N696 TEXAS INSTRUMENTS
Q2T2222
TIS70
BFR40
kd 2060 transistor
BF195 equivalent
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Untitled
Abstract: No abstract text available
Text: Bulletin 12030/A International Rectifier 45L r .d s e r ie s STANDARD RECOVERY DIODES Stud Version Features 150A • Diffused diode ■ High current carrying capability ■ High voltage ratings up to 1 6 00V ■ High surge current capabilities ■ Stud cathode and stud anode version
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12030/A
20CPC
4BSS452
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FU-29
Abstract: LA1175 L4 95 Mitsumi FM OSC LA1174 3SK181 Mitsumi AM coil ift Mitsumi D0994 IC LA1175
Text: Ordering number:EN 227 6B Monolithic Linear 1C L A 1 1 7 5, 1 1 7 5 FM F r o n t End for Ca r Ra d i o , Home St e r e o A p p l i c a t i o n s Functions . Double-balanced type MIX, PIN diode drive AGC output, MOS FET gate drive AGC output, keyed AGC, differential IF amplifier, buffer amplifier for
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M54630P
Abstract: M54630 n type laser diode APC RS 800 m5463 66515FP M54977 54975P M66515FP 16P2N
Text: lAPPLICATION SPECIFIC IC CONTINUED Function Tyjse No. Packase Outiire WttfKXM Features • U sag e /F ie ld • Includes self APC c irc u it N -type Laser diode d rive r with M 66515FP self APC function 20P 2N -A H igh speed Bip • H igh-speed sw itching 40M bps
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66515FP
M66rks
54972P
M54974P
54975P
M54977P
S4992P/FP
54992AP
54995P
M56620AP
M54630P
M54630
n type laser diode
APC RS 800
m5463
M54977
M66515FP
16P2N
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3N60A4D
Abstract: TA49369 HGT1S3N60A4DS HGT1S3N60A4DS9A HGTP3N60A4D 5LEC A9688
Text: HGT1S3N60A4DS, HGTP3N60A4D in t e r r i i J a n u a ry . D ata S h eet 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGT1S3N60A4DS and the HGTP3N60A4D are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices
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HGT1S3N60A4DS
HGTP3N60A4D
TA49327.
TA49369.
3N60A4D
TA49369
HGT1S3N60A4DS9A
5LEC
A9688
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