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    DIODE ESM 15 Search Results

    DIODE ESM 15 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE ESM 15 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KDS121E TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES E Small Package : ESM. Low Forward Voltage : VF=0.9V Typ. . B Fast Reverse Recovery Time : trr=1.6ns(Typ.). MAXIMUM RATING (Ta=25 CHARACTERISTIC


    Original     		KDS121E PDF

    KDS121E

    Abstract: transistor ESM 30
    Text: SEMICONDUCTOR KDS121E TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES E Small Package : ESM. Low Forward Voltage : VF=0.9V Typ. . B Fast Reverse Recovery Time : trr=1.6ns(Typ.). MAXIMUM RATING (Ta=25 CHARACTERISTIC


    Original     		KDS121E KDS121E transistor ESM 30 PDF

    ic Lb 598 d

    Abstract: ESM6045DV
    Text: FZ7 SGS-THOMSON *> 7 # ESM 6045DV NPN DARLINGTON POWER MODULE . HIGH CURRENT POWER BIPOLAR MODULE . VERY LOW Rth JUNCTION CASE . SPECIFIED ACCIDENTAL OVERLOAD AREAS . ULTRAFAST FREEWHEELING DIODE . ISOLATED CASE 2500V RMS . EASY TO MOUNT . LOW INTERNAL PARASITIC INDUCTANCE


    OCR Scan     		6045DV ESM6045DV ic Lb 598 d ESM6045DV PDF

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KDS221E TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES ・Small Package : ESM. ・Low Forward Voltage : VF=1.0V Max. . MAXIMUM RATING (Ta=25℃) CHARACTERISTIC SYMBOL RATING UNIT VRM 20 V Reverse Voltage


    Original     		KDS221E PDF

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR TECHNICAL DATA BAV70T SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES • Small Package • Low Forward Voltage • Fast Reverse Recovery Time • Small Total Capacitance ESM. Vp=0.9V Typ. . t„=1.6ns(Typ.).


    OCR Scan     		BAV70T 150mA TTa--25 -OUT-50^ PDF

    transistor ESM 30

    Abstract: KDS142E marking DS
    Text: SEMICONDUCTOR KDS142E TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES E Small Package : ESM. B Low Forward Voltage : VF=1.0V Max. . D G H A 2 CHARACTERISTIC ) SYMBOL RATING UNIT VRM 20 V Reverse Voltage VR 20


    Original     		KDS142E transistor ESM 30 KDS142E marking DS PDF

    diode ESM 15

    Abstract: No abstract text available
    Text: SEMICONDUCTOR TECHNICAL DATA BAW56T SILICON EPITAXIAL TYPE DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES • Small Package • Low Forward Voltage • Fast Reverse Recovery Time • Small Total Capacitance ESM. Vp=0.92V Typ. . t„=1.6ns(Typ.). Ci=2.2pF (Typ.).


    OCR Scan     		BAW56T 150mA diode ESM 15 PDF

    marking H1

    Abstract: BAW56T
    Text: SEMICONDUCTOR BAW56T TECHNICAL DATA SILICON EPITAXIAL TYPE DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. E : ESM. B : VF=0.92V Typ. . : trr=1.6ns(Typ.). SYMBOL RATING UNIT VRM 85 V Maximum (Peak) Reverse Voltage Reverse Voltage VR 80 V Continuous Forward Current


    Original     		BAW56T marking H1 BAW56T PDF

    KDR331E

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KDR331E TECHNICAL DATA SCHOTTKY BARRIER TYPE DIODE HIGH SPEED SWITCHING. FEATURES ・Low Forward Voltage : VF=0.25 Typ. @IF=5mA ・Small Package : ESM. E B D G H A 2 3 1 MAXIMUM RATING (Ta=25℃) SYMBOL RATING UNIT VRM 15 V Reverse Voltage VR


    Original     		KDR331E Forw10V KDR331E PDF

    marking h2

    Abstract: No abstract text available
    Text: SEMICONDUCTOR BAV70T TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. E : ESM. B : VF=0.9V Typ. . : trr=1.6ns(Typ.). G H : CT=0.9pF (Typ.). 3 1 C MAXIMUM RATING (Ta=25℃) CHARACTERISTIC D 2 A FEATURES ・Small Package


    Original     		BAV70T marking h2 PDF

    diode esm

    Abstract: No abstract text available
    Text: SEMICONDUCTOR BAW56T TECHNICAL DATA SILICON EPITAXIAL TYPE DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. E : ESM. B : VF=0.92V Typ. . : trr=1.6ns(Typ.). C MAXIMUM RATING (Ta=25℃) 3 1 SYMBOL RATING UNIT VRM 85 V Maximum (Peak) Reverse Voltage C MILLIMETERS


    Original     		BAW56T diode esm PDF

    transistor ESM

    Abstract: marking B3 KDS121E ESM diode
    Text: SEMICONDUCTOR KDS121E TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. E : ESM. B : VF=0.9V Typ. . : trr=1.6ns(Typ.). SYMBOL RATING UNIT VRM 85 V Reverse Voltage VR 80 V Maximum (Peak) Forward Current IFM 300 * mA Average Forward Current


    Original     		KDS121E 100mA transistor ESM marking B3 KDS121E ESM diode PDF

    Marking H2

    Abstract: marking .H2 transistor ESM 30 BAV70T
    Text: SEMICONDUCTOR BAV70T TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. E : ESM. B : VF=0.9V Typ. . : trr=1.6ns(Typ.). G H : CT=0.9pF (Typ.). 3 1 SYMBOL RATING UNIT VRM 85 V Reverse Voltage VR 80 V Continuous Forward Current


    Original     		BAV70T Marking H2 marking .H2 transistor ESM 30 BAV70T PDF

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KDS221E TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES E Small Package : ESM. B Low Forward Voltage : VF=1.0V Max. . D G C H A 2 DIM A B 3 1 MILLIMETERS _ 0.10 1.60 + _ 0.10 0.85 + _ 0.10 0.70 +


    Original     		KDS221E PDF

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KDS120E TECHNICAL DATA SILICON EPITAXIAL TYPE DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. E : ESM. B : VF=0.92V Typ. . : trr=1.6ns(Typ.). D C H : CT=2.2pF (Typ.). MILLIMETERS _ 0.10 1.60 + _ 0.10 0.85 + _ 0.10 0.70 + DIM A B G 2 A FEATURES


    Original     		KDS120E Ave00 100mA PDF

    ESM diode 4120

    Abstract: onduleur DIODE REDRESSEMENT G233
    Text: STC 0 S G S-THGMSON "V I 7^237 0002337 3 _ O THOMSON-CSF DIVISION SEM ICO NDUCTEURS ESM 4120 59C 023 37 D “J * ô & * ¿ 3 FAST RECOVERY RECTIFIER DIODE DIODE DE REDRESSEMENT RAPIDE FEATURES *F AV Soft recovery with low recovery charge. Fully characterised for operation up to 20 kHz.


    OCR Scan     		G0G2337 C00LIN6) ESM diode 4120 onduleur DIODE REDRESSEMENT G233 PDF

    diode ESM 15

    Abstract: ESM diode 4120 038N CB-428
    Text: STC 0 I S G S-THGMSON "V 7 ^ 2 3 7 0002337 3 f ~ _ O ESM 4120 T H O M S O N -C S F DIVISION SEMICONDUCTEURS 59C 023 37 D “J * ô & * ¿ 3 FAST RECOVERY RECTIFIER DIODE DIODE DE REDRESSEMENT RAPIDE FEATURES *F AV Soft recovery with low recovery charge.


    OCR Scan     		CB-425) CB-262) CB-262 i0840 CB-19) CB-428) CB-244 diode ESM 15 ESM diode 4120 038N CB-428 PDF

    transistor ESM 30

    Abstract: KDR331E
    Text: SEMICONDUCTOR KDR331E TECHNICAL DATA SCHOTTKY BARRIER TYPE DIODE HIGH SPEED SWITCHING. FEATURES ᴌLow Forward Voltage : VF=0.25 Typ. @IF=5mA ᴌSmall Package : ESM. E B D G H A 2 C 3 1 E G H RATING UNIT VRM 15 V Reverse Voltage VR 10 V Maximum (Peak) Forward Current


    Original     		KDR331E transistor ESM 30 KDR331E PDF

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KDR331E TECHNICAL DATA SCHOTTKY BARRIER TYPE DIODE HIGH SPEED SWITCHING. FEATURES ᴌLow Forward Voltage : VF=0.25 Typ. @IF=5mA ᴌSmall Package : ESM. E B D G C H A 2 3 1 E G H RATING UNIT VRM 15 V Reverse Voltage VR 10 V Maximum (Peak) Forward Current


    Original     		KDR331E PDF

    ESM diode

    Abstract: KDS121E
    Text: SEMICONDUCTOR KDS121E TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. E : ESM. B : VF=0.9V Typ. . : trr=1.6ns(Typ.). D H : CT=0.9pF (Typ.). C 3 1 MILLIMETERS _ 0.10 1.60 + _ 0.10 0.85 + _ 0.10 0.70 + DIM A B G 2 A FEATURES


    Original     		KDS121E 100Temperature 100mA ESM diode KDS121E PDF

    transistor ESM

    Abstract: KDS120E
    Text: SEMICONDUCTOR KDS120E TECHNICAL DATA SILICON EPITAXIAL TYPE DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. E : ESM. B : VF=0.92V Typ. . : trr=1.6ns(Typ.). D H : CT=2.2pF (Typ.). C 3 1 MILLIMETERS _ 0.10 1.60 + _ 0.10 0.85 + _ 0.10 0.70 + DIM A B G 2 A FEATURES


    Original     		KDS120E 100mA transistor ESM KDS120E PDF

    KDS121E

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KDS121E TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. : ESM. E : VF=0.9V Typ. . B : trr=1.6ns(Typ.). : CT=0.9pF (Typ.). D 2 DIM A B C D G H A FEATURES ・Small Package ・Low Forward Voltage ・Fast Reverse Recovery Time


    Original     		KDS121E KDS121E PDF

    esm power diodes

    Abstract: KDS120E
    Text: SEMICONDUCTOR KDS120E TECHNICAL DATA SILICON EPITAXIAL TYPE DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. E : ESM. B : VF=0.92V Typ. . : trr=1.6ns(Typ.). D H : CT=2.2pF (Typ.). C 3 1 MILLIMETERS _ 0.10 1.60 + _ 0.10 0.85 + _ 0.10 0.70 + DIM A B G 2 A FEATURES


    Original     		KDS120E 100mA esm power diodes KDS120E PDF

    KDS120E

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KDS120E TECHNICAL DATA SILICON EPITAXIAL TYPE DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. E : ESM. B : VF=0.92V Typ. . : trr=1.6ns(Typ.). D 2 H : CT=2.2pF (Typ.). DIM A B C D G A FEATURES ・Small Package ・Low Forward Voltage ・Fast Reverse Recovery Time


    Original     		KDS120E KDS120E PDF