IGBT 100V 200A
Abstract: No abstract text available
Text: CM200TU-5F Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Trench Gate Design Six IGBTMOD 200 Amperes/250 Volts A B F E G H E G E H R 4 - Mounting Holes S K L GuP EuP D GvP EvP GwP EwP C GuN EuN TC Measured Point v u
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CM200TU-5F
Amperes/250
IGBT 100V 200A
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IGBT 100V 200A
Abstract: CM200TU-5F
Text: CM200TU-5F Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Trench Gate Design Six IGBTMOD 200 Amperes/250 Volts A B F E G H E G E H R 4 - Mounting Holes S K L GuP EuP D GvP EvP GwP EwP C GuN EuN TC Measured Point v u
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CM200TU-5F
Amperes/250
IGBT 100V 200A
CM200TU-5F
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CM20TF-24H
Abstract: igbt 600v 20a 600v 20a IGBT
Text: MITSUBISHI IGBT MODULES CM20TF-24H MEDIUM POWER SWITCHING USE INSULATED TYPE A S - DIA. 2 TYP. C K H H N GUP EUP GVP EVP GWP EWP U V W P D J E L N GUN EUN GVN EVN R Q R GWN EWN Q R P B TAB #250, t = 0.8 TAB #110, t = 0.5 F G M R P GuP GvP EuP U GwP EvP V
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CM20TF-24H
CM20TF-24H
igbt 600v 20a
600v 20a IGBT
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CM30TF-12H
Abstract: CM30TF12H igbt 300V 30A H bridge 300v 30a
Text: MITSUBISHI IGBT MODULES CM30TF-12H MEDIUM POWER SWITCHING USE INSULATED TYPE A S - DIA. 2 TYP. C K H H N GUP EUP GVP EVP GWP EWP U V W P D J E L N GUN GVN EVN EUN R Q R GWN EWN Q R P B TAB #250, t = 0.8 TAB #110, t = 0.5 F G M R P GuP GvP EuP U GuN EwP W
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CM30TF-12H
CM30TF-12H
CM30TF12H
igbt 300V 30A
H bridge 300v 30a
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CM25AD05-24H
Abstract: ac t06
Text: MITSUBISHI IGBT MODULES ARY CM25AD05-24H MIN RELI . ge. ation ecific ct to chan je nal sp ot a fiits are sub n is is e: Th tric lim Notice parame Som P MEDIUM POWER SWITCHING USE FLAT BASE, INSULATED TYPE CM25AD05-24H ¡IC . 25A
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CM25AD05-24H
G-746"
CM25AD05-24H
ac t06
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IGBT 100V 200A
Abstract: tc 144 e CM200TU-5F
Text: MITSUBISHI IGBT MODULES CM200TU-5F HIGH POWER SWITCHING USE CM200TU-5F ¡IC . 200A ¡VCES . 250V ¡Insulated Type ¡6-elements in a pack
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CM200TU-5F
G-746"
IGBT 100V 200A
tc 144 e
CM200TU-5F
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CM200TU-5F
Abstract: IGBT 100V 200A
Text: CM200TU-5F Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Trench Gate Design Six IGBTMOD 200 Amperes/250 Volts A B F E G H E G E H R 4 - Mounting Holes S K L GuP EuP D GvP EvP GwP EwP C GuN EuN TC Measured Point v u
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CM200TU-5F
Amperes/250
CM200TU-5F
IGBT 100V 200A
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CM15TF-24H
Abstract: 400v 15A igbt module
Text: MITSUBISHI IGBT MODULES CM15TF-24H MEDIUM POWER SWITCHING USE INSULATED TYPE A S - DIA. 2 TYP. C K H H N GUP EUP GVP EVP GWP EWP U V W P D J E L N GUN EUN GVN EVN R Q R GWN EWN Q R P B TAB #250, t = 0.8 TAB #110, t = 0.5 F G M R P GuP GvP EuP U GwP EvP V
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CM15TF-24H
CM15TF-24H
400v 15A igbt module
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Untitled
Abstract: No abstract text available
Text: CM25AD05-24H Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Flexpak CIB Module Three Phase Converter + Three Phase Inverter + Brake + Thermistor 25 Amperes/1200 Volts G H H H H A C H H J K P1 N1 OPEN OPEN OPEN J K K S EUP GUP EVP GVPEWP GWP
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CM25AD05-24H
Amperes/1200
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Untitled
Abstract: No abstract text available
Text: CM25AD05-24H Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Flexpak CIB Module Three Phase Converter + Three Phase Inverter + Brake + Thermistor 25 Amperes/1200 Volts G H H H H A C H H J K P1 N1 OPEN OPEN OPEN J K K S EUP GUP EVP GVPEWP GWP
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CM25AD05-24H
Amperes/1200
-50A/Â
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QM15TG-9B
Abstract: QM15t
Text: MITSUBISHI TRANSISTOR MODULES QM15TG-9B MEDIUM POWER SWITCHING USE INSULATED TYPE QM15TG-9B • • • • IC Collector current . 15A VCEX Collector-emitter voltage . 500V hFE DC current gain. 250
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QM15TG-9B
300mA
QM15TG-9B
QM15t
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CM200TU-5F
Abstract: No abstract text available
Text: CM200TU-5F Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Trench Gate Design Six IGBTMOD 200 Amperes/250 Volts A B F E G H E G E H R 4 - Mounting Holes S K L GuP EuP D GvP EvP GwP EwP C GuN EuN TC Measured Point v u
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CM200TU-5F
Amperes/250
CM200TU-5F
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CM30TF-12H
Abstract: H bridge 300v 30a igbt 200v 30a
Text: MITSUBISHI IGBT MODULES CM30TF-12H MEDIUM POWER SWITCHING USE INSULATED TYPE A S - DIA. 2 TYP. C K H H N GUP EUP GVP EVP GWP EWP U V W P D J E L N GUN EUN GVN EVN R Q R GWN EWN Q R P B TAB #250, t = 0.8 TAB #110, t = 0.5 F G M R P GuP GvP EuP U GuN EwP W
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CM30TF-12H
CM30TF-12H
H bridge 300v 30a
igbt 200v 30a
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600v 20a IGBT
Abstract: igbt power module 1200v 20A CM20TF-24H ic tab 810
Text: MITSUBISHI IGBT MODULES CM20TF-24H MEDIUM POWER SWITCHING USE INSULATED TYPE A S - DIA. 2 TYP. C K H H N GUP EUP GVP EVP GWP EWP U V W P D J E L N GUN GVN EVN EUN R Q R GWN EWN Q R P B TAB #250, t = 0.8 TAB #110, t = 0.5 F G M R P GuP GvP EuP U GwP EvP V
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CM20TF-24H
600v 20a IGBT
igbt power module 1200v 20A
CM20TF-24H
ic tab 810
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BUN DIODE
Abstract: E80276 QM15TD-HB all transistor QM15t DIODE EVP 28
Text: MITSUBISHI TRANSISTOR MODULES QM15TD-HB MEDIUM POWER SWITCHING USE INSULATED TYPE QM15TD-HB • • • • • IC Collector current . 15A VCEX Collector-emitter voltage . 600V hFE DC current gain. 250
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QM15TD-HB
E80276
E80271
300mA
BUN DIODE
E80276
QM15TD-HB
all transistor
QM15t
DIODE EVP 28
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BUN DIODE
Abstract: qm15tb-2hb Type QM15TB E80276 all transistor
Text: MITSUBISHI TRANSISTOR MODULES QM15TB-2HB MEDIUM POWER SWITCHING USE INSULATED TYPE QM15TB-2HB • • • • • IC Collector current . 15A VCEX Collector-emitter voltage . 1000V hFE DC current gain. 250
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QM15TB-2HB
E80276
E80271
300mA
BUN DIODE
qm15tb-2hb
Type QM15TB
E80276
all transistor
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BUN DIODE
Abstract: QM20TG-9B QM20TG9B bvp DIODE
Text: MITSUBISHI TRANSISTOR MODULES QM20TG-9B MEDIUM POWER SWITCHING USE INSULATED TYPE QM20TG-9B • • • • IC Collector current . 20A VCEX Collector-emitter voltage . 500V hFE DC current gain. 250
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QM20TG-9B
120mA
400mA
BUN DIODE
QM20TG-9B
QM20TG9B
bvp DIODE
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CM25AD00-24H
Abstract: No abstract text available
Text: MITSUBISHI IGBT MODULES CM25AD00-24H MEDIUM POWER SWITCHING USE FLAT BASE, INSULATED TYPE CM25AD00-24H ¡IC . 25A ¡VCES . 1200V ¡Insulated Type
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CM25AD00-24H
G-746"
CM25AD00-24H
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QM10TE-HB
Abstract: bup transistor bvp DIODE QM10 QM10T
Text: MITSUBISHI TRANSISTOR MODULES QM10TE-HB MEDIUM POWER SWITCHING USE INSULATED TYPE QM10TE-HB • Ic • V ce x • hFE Collector current. 10A [ Collector-emitter voltage. 600V j DC current gain.250
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QM10TE-HB
E80276
E80271
QM10TE-HB
bup transistor
bvp DIODE
QM10
QM10T
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IGBT 100V 200A
Abstract: No abstract text available
Text: CM200TU-5F Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Trench Gate Design Six IGBTMOD 200 Amperes/250 Volts A B F E G H E G E H R 4 - Mounting Holes S K L GuP EuP D GvP EvP GwP EwP C GuN EuN TC Measured Point v u
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CM200TU-5F
Amperes/250
IGBT 100V 200A
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Sharp IS471
Abstract: IS471 1S471 s471 diode S471 1s471 datasheet IS471F IS471FS s471f
Text: IS471 F • Features Unit : mm 1. Impervious to external disturbing lights due to light modulation system 2. Built-in pulse driver circuit and sync. detector circuit on the emitter side 3. A wide range of operating supply voltage (V. :4.5 to 16V) Internal con&Ion diagram
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IS471
1S471
Sharp IS471
s471 diode
S471
1s471 datasheet
IS471F
IS471FS
s471f
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bvp DIODE
Abstract: 30-HV CM15TF-24H 7294b21 BWP 34
Text: m N BG X CM15TF-24H Powarex, inc., 200 Hlllls Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 SiXm /GBT IGBTMOD H-Series Module 15 Amperes/1200 Volts - O 8oP EuP D D BvP EvP BwP EwP S - DIA— (2 TYP.) I I e d -N — H ff TM L Description: Powerex IGBTMOD™ Modules are
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CM15TF-24H
Amperes/1200
lc-15A
CU15TF-24H
72T4b21
bvp DIODE
30-HV
CM15TF-24H
7294b21
BWP 34
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service-mitteilungen
Abstract: elektronik DDR rema- radio sowjetische transistoren rema andante T8924 ddr veb servicemitteilungen Sonneberg GER-A
Text: SERVICE-MITTEILUNGEN V E B IN DUSTRIEVERTRIEB R U ND FU NK UND F E RN SE H EN I Ir a d i o -television AUSGABE: DEZEMBER t iW ir Noah bl« Sud« 1974- wird der neu« sowjetische yarbfernsehempfänger "Raduga 706" in den Handel kommen. Dieser Empfänger Belohnet siob duroh zahlreiohe Verbesserungen
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OCR Scan
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II1/18/379
service-mitteilungen
elektronik DDR
rema- radio
sowjetische transistoren
rema andante
T8924
ddr veb
servicemitteilungen
Sonneberg
GER-A
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IS471F
Abstract: 229201 2N3053 transistor 3 pin IR sensor circuit 38khz relay 270r IS471F equivalent RS Components 585-983 IR Sensor receiver pair ir led modulated at 38kHz transistor BC107 pin diagram
Text: Issued November 1994 F18528 Infra-red devices Basics of photometry This is a brief introduction to the basics of photometry. To be able to understand this subject better a brief review of geometric principles utilised is required. Figure 2 Geometric principles
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F18528
IS471F
229201
2N3053 transistor
3 pin IR sensor circuit 38khz
relay 270r
IS471F equivalent
RS Components 585-983
IR Sensor receiver pair
ir led modulated at 38kHz
transistor BC107 pin diagram
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