2FAH-C20R
Abstract: b2 diode
Text: Features • ■ ■ New Product Development Integrated Passive Device ESD Protection to IEC61000-4-2 Spec. 2FAH-C20R Series - Integrated Passive & Active Device using CSP General Information This application specific integrated passive component is designed to provide all of the necessary ESD protection
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IEC61000-4-2
2FAH-C20R
5M/CS0202
b2 diode
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Untitled
Abstract: No abstract text available
Text: Features • ■ ■ New Product Development Integrated Passive Device ESD Protection to IEC61000-4-2 Spec. 2FAH-C20R Series - Integrated Passive & Active Device using CSP General Information This application specific integrated passive component is designed to provide all of the necessary ESD protection
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IEC61000-4-2
2FAH-C20R
e/TF0206
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diode marking FAH
Abstract: DIODE FAH 45 2FAH-C20R marking FAH FAH diode 0/DIODE FAH 45
Text: oH V SC AV ER OM AI SIO PL LA N IA BL S NT E Features • *R ■ ■ ■ ■ Lead free versions available RoHS compliant lead free version * New Product Development Integrated Passive Device ESD Protection to IEC61000-4-2 Spec. 2FAH-C20R Series - Integrated Passive & Active Device using CSP
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IEC61000-4-2
2FAH-C20R
5M/CS0202
diode marking FAH
DIODE FAH 45
marking FAH
FAH diode
0/DIODE FAH 45
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FAH diode
Abstract: 2FAH-C20R
Text: oH V SC AV ER OM AI SIO PL LA N IA BL S NT E *R Features • ■ ■ ■ ■ Lead free versions available RoHS compliant lead free version * New Product Development Integrated Passive Device ESD Protection to IEC61000-4-2 Spec. 2FAH-C20R Series - Integrated Passive & Active Device using CSP
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IEC61000-4-2
2FAH-C20R
5M/CS0202
FAH diode
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F75383
Abstract: F75393 2n3906 beta 2n3906 equivalent F75384 F75393 S 2N3906 thermal transistor BY395 pnp 2N3906 beta
Text: F75393 ±1oC Temperature Sensor with ß Compensation Release Date: May, 2008 Revision: V0.16P F75393 F75393 Datasheet Revision History Version Date Page Revision History V0.10P 2007/7/23 - Preliminary Version V0.11P 2007/9/20 - Add register description V0.12P
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F75393
F75393
F75394
2N3906)
2N3906
2200pF
F75383
2n3906 beta
2n3906 equivalent
F75384
F75393 S
2N3906
thermal transistor
BY395
pnp 2N3906 beta
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4312 Fan
Abstract: pin diagram of 7447 22342 capacitor amd 2587 2N3904 EMC2102 EMC2102-DZK transistor 8331 FAN23
Text: EMC2102 RPM-Based Fan Controller with HW Thermal Shutdown PRODUCT FEATURES Datasheet General Description Features The EMC2102 is an SMBus, closed-loop, RPM-based fan controller/driver with hardware HW thermal shutdown and reset controller. The EMC2102 is
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EMC2102
EMC2102
28pin
4312 Fan
pin diagram of 7447
22342 capacitor
amd 2587
2N3904
EMC2102-DZK
transistor 8331
FAN23
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FAH diode
Abstract: K375 DIODE FAH 45
Text: OM6OL6OPB OM50F60PB Prelim inary Data Sheet OM45L120PB OM35F120PB DUAL IGBTS IN HERMETIC ISOLATED POWER BLOCK PACKAGES H ig h C u r r e n t . Hi gh V ol ta g e 6 0 0 V A n d 1200V. Up To 75 A m p Dual I G B T s W it h F R E D D i o d e s FEATURES • Includes Internal FRED Diode
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OM50F60PB
OM45L120PB
OM35F120PB
MIL-S-19500,
35F120HB
FAH diode
K375
DIODE FAH 45
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Irfp450
Abstract: No abstract text available
Text: [ ' - 7964142 SAM SUN G S EM IC O N D UCTOR INC D eT | 7 ^ 4 1 4 2 9 8D 0 5 2 2 4 □□□5524 3 | D T ~ 3 i -1 3 N-CHANNEL POWER MOSFETS IRFP450/451/452/453 FEATURES Low RDS on at high voltage Improved inductive ruggedness Excellent high voltage stability
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IRFP450/451/452/453
IRFP250
IRFP251
IRFP252
IRFP253
IRFP450
IRFP451
OOGS43S
Irfp450
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DT1X
Abstract: No abstract text available
Text: OMS410 OMS410A 0MS51Q 3 PHASE, LOW VOLTAGE, LOW RDS on , MOSFET BRIDGE CIRCUIT IN A PLASTIC PACKAGE T h r e e P ha s e . 100 Volt, 15 To 45 A m p B r i d g e With C u rre n t A n d T e m p e ra tu re S ensin g In A L o w P r o f i l e P a c k a g e FEATURES
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OMS410
OMS410A
0MS51Q
DT1X
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51001Z
Abstract: siemens VFT i314 laserdiode application
Text: SIEMENS 1300 nm Laser in Coaxial TO-Paekage STH 510Q1Z Designed for application In fiber-optic networks Laser diode with MUiu-Qüâiîîüirïi We!! structure Suitable for bit rates up îo 1 Gbiys * Ternary photodiode at rear mirror for monitoring and control of radiant power
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51001Z
51QQ2Z
Q62702-P3013
51001Z
siemens VFT
i314
laserdiode application
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Untitled
Abstract: No abstract text available
Text: DATA SHEET LASER DIODE NDL7001 1 310 nm FIBER OPTIC COMMUNICATIONS InGaAsP STRAINED MQW DC-PBH LASER DIODE DESCRIPTION NDL7001 is a 1 310 nm laser diode for fiber optic communications and has a strained Multiple Quantum Well stMQW structure and a built-in InGaAs monitor photo diode.
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NDL7001
NDL7001
b4S752S
b427525
b427525
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schematic powerline
Abstract: hexfets irf254 DIODE FAH 45
Text: 4Ö55M52 QGüö'ibO 2 | Preliminary Data Sheet No. PD-5.013A INTERNATIONAL R E C T IF IE R INTERNATIONAL RECTIFIER TOR HEXFET* Power Module CPY100-Series Power Half-Bridges The CPY100 series of power modules are half bridge configured HEXFETs, in a practical, heatsinkable electrically isolated S IP single in-line
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55M52
CPY100-Series
CPY100
schematic powerline
hexfets
irf254
DIODE FAH 45
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ADB13
Abstract: No abstract text available
Text: DATA SHEET LASER DIODE NDL7001 1310 nm FIBER OPTIC COMMUNICATIONS InGaAsP M OW DC-PBH LASER DIODE DESCRIPTION NDL7001 is a 1310 nm laser diode for fiber optic com m unications and have a M u ltip le Quantum W e ll M Q W structure and built-in InGaAs m onitor photo diode.
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NDL7001
NDL7001
LC-2298)
ADB13
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IRF035
Abstract: IRF034
Text: HE D I 4Ô55MS2 □ 0G*i02b *1 | Data Sheet No. PD-9.585A INTERNATIONAL R ECTIFIER INTERNATIONAL RECTIFIER IO R AVALANCHE AND dv/dt RATED 175°C OPERATING TEMPERATURE HEXFET TRANSISTORS IRF034 IRFQ35 : N -C H A N N E L 60 Volt, 0.050 Ohm HEXFET TO-204AE TO-3 Hermetic Package
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55MS2
IRF034
IRFQ35
O-204AE
IRF034,
IRF035
5S452
IRF034
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Untitled
Abstract: No abstract text available
Text: Preliminary Data Sheet OM6OL6OHB OM45L120HB OM50F60HB OM35F12QHB HALF-BRIDGE IGBTS IN HERMETIC ISOLATED POWER BLO CK PACKAGES High Current, High Voltage 600V And 1200V. Up To 75 A m p IGBTs With FRED Diodes. Half-Bridge C onfiguration FEATURES • • •
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OM45L120HB
OM50F60HB
OM35F12QHB
MIL-S-19500,
03oJL
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irf740 spice model
Abstract: IRF740
Text: HE D I 4âSS452 QÛ0ÔS44 0 | Data Sheet No. PD-9.375G INTERNATIONAL RECTIFIER T INTERNATIONAL. RECTIFIER l O R REPETITIVE AVALANCHE AND dv/dt RATED* HEXFET TRANSISTORS IRF740 IRF74Ì IRF742 N-CHANNEL IRF743 Product Summary 400 Volt, 0.55 Ohm HEXFET T0-220AB Plastic Package
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SS452
IRF740
IRF74Ã
IRF742
IRF743
T0-220AB
IRF741
C-299
irf740 spice model
IRF740
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MM74HCT241
Abstract: MM54HCT244J M74HCT24
Text: National MM54HCT240/MM74HCT240 Inverting Octal TRI-STATE Buffer MM54HCT241/MM74HCT241 Octal TRI-STATE Buffer MM54HCT244/MM74HCT244 Octal TRI-STATE Buffer General Description These TRI-STATE buffers utilize microCMOS Technology, 3.0 micron silicon gate N-weW CMOS, and are general pur
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MM54HCT240/MM74HCT240
MM54HCT241/MM74HCT241
MM54HCT244/MM74HCT244
MM54HCT/MM74HCT
150pF
74HCT
54HCT
TA----55
54HCT241/MM74HCT241/MM54HCT244/MM74HCT244
MM74HCT241
MM54HCT244J
M74HCT24
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V485
Abstract: No abstract text available
Text: S-n 0 S SYSTEMS INC IDE D I 000D7SD D I 7^35^0=1 T 'V / ^ r m m 1. V- , , , - * V * 'W ^ ^ ïï^ s S ^ » ;^ PF187-03 E l M OS AREA IMAGE SENSOR OHigh Resolution 6 3 8 4 Horizontal X 485 (Vertical) Photo Sensors Incorporated #2/3-inch Size Solid State Imaging
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000D7SD
PF187-03
SEA7100H
0D007SB
SED3181F3A)
V485
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D100E
Abstract: ic uc3842 BUV48 SE sgsd00031 SGSD00039 uc3842 application 600V BU508 BU810
Text: / S T SGS-THOMSON [M «m i g1TIMlM(gS APPLICATION NOTE HIGH VOLTAGE TRANSISTORS WITH POWER MOS EMITTER SWITCHING INTRODUCTION This paper summarizes the results of an investi gation carried out on power devices with both MOS and BIPOLAR parts working together in the same
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SGSP321,
SGSP352
BUV48,
BU508A
SGSD00035
SGSD00039
SGSD00031,
BU810
D100E
ic uc3842
BUV48 SE
sgsd00031
uc3842 application 600V
BU508
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IRF720
Abstract: 1RF721 IRF723 t11g IRF721 IRF722
Text: 01 3875081 G E SOLID STATE D E ^ 3fl7SGûl ' 0 1E 18364 D D i a3bM 3 ~ T D\ T-39-11 Standard Power M O SFET s IRF720, IRF721, IRF722, IRF723 File Number 1579 Power MOS Field-Effect Transistors
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T-39-11
IRF720,
IRF721,
IRF722,
IRF723
50V-400V
IRF722
IRF720
1RF721
IRF723
t11g
IRF721
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Untitled
Abstract: No abstract text available
Text: Data Sheet No. PD-9.889 INTERNATIONAL RECTIFIER REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS IRHM915Q P-CHANNEL RAD HARD Product Summary -100 Volt, 0.12012, RAD HARD HEXFET International Rectifier’s P-Channel RAD HARD Technology HEXFETs demonstrate excellent threshold voltage stability and
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IRHM915Q
1x105
1x105
1x1012
MIL-STD-750,
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Untitled
Abstract: No abstract text available
Text: FU JIT SU PROGRAMMABLE SCHOTTKY 32768-B IT READ ONLY MEMORY SCHOTTKY 32768-BIT DEAP PROM 4096 WORDS x 8 BITS M B7142E/H N ovem ber 1988 Edition 4 .0 The Fujitsu MB7142 Is high spee d s c h o ttk y T T L e lectrica lly field p rogram m ab le read only m e m o ry organized as 4096 w o rds by 8 bits. W ith th re e s ta te o u tp u ts , m em o ry
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32768-B
32768-BIT
B7142E/H
MB7142
MB7142E/H
24-pin
24-LEAD
FPT-24C-A01)
28-pad
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78A093A
Abstract: MT88
Text: H A R R CD22M3493 IS S E M I C O N D U C T O R 1 2 x 8 x 1 BiMOS-E Crosspoint Switch January 1997 Description Features 96 Analog Switches Low Ron Guaranteed Rqn Matching Analog Signal Input Voltage Equal to the Supply Voltage Wide Operating Voltage. 4V to 16V
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CD22M3493
CD22M3493
CD22M
78A093A
MT88
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Untitled
Abstract: No abstract text available
Text: Bulletin 127107 rev. A 09/97 International Iö R Rectifier T.HFL SERIES T-Modules FAST RECOVERY DIODES Features • 40 A 70 A 85 A Fast recovery tim e characteristics ■ Electrically isolated base plate ■ 3 5 0 0 VRMS isolating voltage ■ Standard J E D E C package
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003G030
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