CD laser pickup assembly
Abstract: laser diode symbol schematic ir3c09 DVD pickup assembly DVD laser pickup assembly DVD optical pick-up assembly schematic diagram tv sharp IR3C08 RVK POWER FACTOR CONTROLLER 780nm 500mW Laser Diode for dvd
Text: Numbering System • New Numbering System of Laser Diodes GH 0 65 07 A 2 A Semiconductor laser diode Category 0 : Laser diode, 1 : Frame laser, 2 : Dual wavelength laser Wavelength (63 : 635nm band, 65 : 650nm band, 78 : 780nm band etc.) Optical power output
|
Original
|
635nm
650nm
780nm
120mA
CD laser pickup assembly
laser diode symbol schematic
ir3c09
DVD pickup assembly
DVD laser pickup assembly
DVD optical pick-up assembly
schematic diagram tv sharp
IR3C08
RVK POWER FACTOR CONTROLLER
780nm 500mW Laser Diode for dvd
|
PDF
|
Untitled
Abstract: No abstract text available
Text: GB100XCP12-227 IGBT/SiC Diode Co-pack VCES = ICM = VCE SAT = Features Package • RoHS Compliant Optimal Punch Through (OPT) technology SiC freewheeling diode Positive temperature coefficient for easy paralleling Extremely fast switching speeds
|
Original
|
GB100XCP12-227
|
PDF
|
GH06560B2C
Abstract: GH06560B2 2 Wavelength Laser Diode sharp sharp laser diode Sharp Hologram laser
Text: LASER DIODE Issued on Jun. 10, 2002 Model GH06560B7C/GH06560B2C Sales & Marketing Group -Electronic Components & Devices Laser Diode for ✕4 speed DVD-R/-RW/+R/+RW/RAM Writing Low-aspect-ratio product • Features ■ Outline Dimensions ● Simplification of optical components is possible
|
Original
|
GH06560B7C/GH06560B2C
GH06560B7C
GH06560B2C
GA100T8W1MZ
12-pin
GH06560B2C
GH06560B2
2 Wavelength Laser Diode sharp
sharp laser diode
Sharp Hologram laser
|
PDF
|
Untitled
Abstract: No abstract text available
Text: GB100XCP12-227 IGBT/SiC Diode Co-pack VCES = ICM = VCE SAT = Features Package • RoHS Compliant Optimal Punch Through (OPT) technology SiC freewheeling diode Positive temperature coefficient for easy paralleling Extremely fast switching speeds
|
Original
|
GB100XCP12-227
|
PDF
|
dvd pulse laser diode
Abstract: GA100T8W1MZ GH06535A2B GH06535B2B GH06550B2B GH06570A2C Laser Diode for DVD-R dvd laser diode 10 pin 100 mw dvd rw diode 10 pin 100 mw dvd rw laser
Text: Laser Diode Issued on Feb. 25, 2002 Model GH06570A2C Sales & Marketing Group -Electronic Components & Devices Laser Diode for ✕4 speed DVD-R/RW/+RW/RAM ● 21 3 0.4±0.1 Improved half intensity angle ellipticity : about 15 % +0 ø 5.6 – 0.025 Tc=25 °C
|
Original
|
GH06570A2C
GH06550B2B
GA100T8W1MZ
dvd pulse laser diode
GA100T8W1MZ
GH06535A2B
GH06535B2B
GH06550B2B
GH06570A2C
Laser Diode for DVD-R
dvd laser diode 10 pin 100 mw
dvd rw diode 10 pin 100 mw
dvd rw laser
|
PDF
|
Untitled
Abstract: No abstract text available
Text: GA100SICP12-227 Silicon Carbide Junction Transistor/Schottky Diode Co-pack VDS VDS ON ID RDS(ON) Features Package • RoHS Compliant 175 °C maximum operating temperature Temperature independent switching performance Gate oxide free SiC switch
|
Original
|
GA100SICP12-227
OT-227
ReSIPC12
GA100SIPC12
00E-47
26E-28
75E-09
57E-09
00E-03
|
PDF
|
Untitled
Abstract: No abstract text available
Text: GA100SICP12-227 Silicon Carbide Junction Transistor/Schottky Diode Co-pack Features Package • RoHS Compliant 175 °C Maximum Operating Temperature Gate Oxide Free SiC Switch Exceptional Safe Operating Area Integrated SiC Schottky Rectifier
|
Original
|
GA100SICP12-227
833E-48
073E-26
398E-9
026E-09
0E-03
GA100SIPC12
99E-16
3E-05
86E-09
|
PDF
|
Untitled
Abstract: No abstract text available
Text: GA100SICP12-227 Silicon Carbide Junction Transistor/Schottky Diode Co-pack VDS VDS ON ID RDS(ON) Features Package • RoHS Compliant 175 °C maximum operating temperature Temperature independent switching performance Gate oxide free SiC switch
|
Original
|
GA100SICP12-227
OT-227
Reduc00SIPC12
GA100SIPC12
00E-47
26E-28
75E-09
57E-09
00E-03
|
PDF
|
Untitled
Abstract: No abstract text available
Text: designfeature Deepak Veereddy, Device Engineer, Eric Lieser, Senior Field Applications Engineer Michael DiGangi, Chief Business Development Officer, GeneSiC Semiconductor, Inc. 1200 V/100 A Si IGBT/SiC Diode Copack Cuts Switching Losses A recently launched 1200 V
|
Original
|
GA100XCP12
55-kW
com/micnotes/APT0408
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TECHNOLOGY 1200 V/100 A Si IGBT/SiC Diode Copack for Power Electronic Applications Designed to deliver high system efficiencies by a drastic reduction in the IGBT and FWD dynamic losses GeneSiC Semiconductor, Inc. has recently launched 1200 V IGBT copack products that
|
Original
|
|
PDF
|
IRG41BC20W
Abstract: IRG41BC20UD Drive circuit for IGBT using IR2130 IR2184 application notes IR2110 driver CIRCUIT FOR INVERTERS DC MOTOR SPEED CONTROL USING IGBT IRG41BC30W IR2181 application notes IR2103 bldc driver 1KW dc motor
Text: TABLE OF CONTENTS Selection Guides Fast Diode Die Data Sheets FRED Die Data Sheets HEXFET Power MOSFET Die Data Sheets HEXFRED® Rectifier Die Data Sheets IC Data Sheets IGBT Die Data Sheets IGBT Modules for Motor Drive & UPS IGBT Modules for Motor Drives in Industrial Electric Vehicles
|
Original
|
O-220
IR2130
230VAC
IR2133
460VAC
IR2233
IR2137/IR2171
IRG41BC20W
IRG41BC20UD
Drive circuit for IGBT using IR2130
IR2184 application notes
IR2110 driver CIRCUIT FOR INVERTERS
DC MOTOR SPEED CONTROL USING IGBT
IRG41BC30W
IR2181 application notes
IR2103 bldc driver
1KW dc motor
|
PDF
|
GA100TS120K
Abstract: ic tb 1245
Text: PRELIMINARY GA100TS120K ]HALF-BRODGE IGBT INT-A -PAK Short Circuit Rated Ultra-FastTM Speed IGBT Features • • VCES=1200V Generation 5 IGBT NPT technology
|
Original
|
GA100TS120K
GA100TS120K
ic tb 1245
|
PDF
|
tig ac inverter circuit
Abstract: tig welding machine IRF 100A tig welding tig ac inverter circuit 180 GA100TS60SF igbt qualification circuit 100a diode bridge Welding inverter up to 100A tig 180 inverter welding
Text: Bulletin I27201 rev. A 01/06 GA100TS60SF "HALF-BRIDGE" IGBT INT-A-PAK Standard Speed IGBT Features • • • • • VCES = 600V Standard Speed PT Igbt Technology Fred PT Antiparallel diodes with Fast recovery Very Low Conduction Losses Al2O3 DBC UL Pending
|
Original
|
I27201
GA100TS60SF
tig ac inverter circuit
tig welding machine
IRF 100A
tig welding
tig ac inverter circuit 180
GA100TS60SF
igbt qualification circuit
100a diode bridge
Welding inverter up to 100A
tig 180 inverter welding
|
PDF
|
GA100TS60SF
Abstract: No abstract text available
Text: Bulletin I27201 07/05 GA100TS60SF "HALF-BRIDGE" IGBT INT-A-PAK Standard Speed IGBT Features • • • • • • VCES = 600V Generation 4 Standard Speed IGBT Technology Fred Pt Antiparallel diodes with Fast recovery Very Low Conduction Losses Industry Standard Package
|
Original
|
I27201
GA100TS60SF
GA100TS60SF
|
PDF
|
|
|
GA100TS60SF
Abstract: No abstract text available
Text: Bulletin I27201 rev. A 01/06 GA100TS60SF "HALF-BRIDGE" IGBT INT-A-PAK Standard Speed IGBT Features • • • • • VCES = 600V Standard Speed PT Igbt Technology Fred PT Antiparallel diodes with Fast recovery Very Low Conduction Losses Al2O3 DBC UL Pending
|
Original
|
I27201
GA100TS60SF
08-Mar-07
GA100TS60SF
|
PDF
|
igbt 100
Abstract: GA100TS60SF GA100TS60SFPbF
Text: GA100TS60SFPbF Vishay High Power Products "Half-Bridge" IGBT INT-A-PAK Standard Speed IGBT , 100 A FEATURES • Standard speed PT IGBT technology • Standard speed: DC to 1 kHz, optimized for hard switching speed • FRED PtTM antiparallel diodes with fast recovery
|
Original
|
GA100TS60SFPbF
18-Jul-08
igbt 100
GA100TS60SF
GA100TS60SFPbF
|
PDF
|
GA100NA60UP
Abstract: ultrafast igbt information OF ic 7400
Text: GA100NA60UP Vishay High Power Products Insulated Gate Bipolar Transistor Ultrafast Speed IGBT , 50 A FEATURES • Ultrafast: Optimized for minimum saturation voltage and speed 0 to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses
|
Original
|
GA100NA60UP
OT-227
18-Jul-08
GA100NA60UP
ultrafast igbt
information OF ic 7400
|
PDF
|
GA100TS120UPBF
Abstract: No abstract text available
Text: Preliminary Data Sheet I27243 12/06 GA100TS120UPbF "HALF-BRIDGE" IGBT INT-A-PAK Ultra-FastTM Speed IGBT Features VCES = 1200V • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode
|
Original
|
I27243
GA100TS120UPbF
GA100TS120UPBF
|
PDF
|
GA100TS60SFPbF
Abstract: tig ac inverter circuit E78996 datasheet bridge tig IGBT module E78996 tig 180 inverter welding tig ac inverter circuit 180
Text: GA100TS60SFPbF Vishay High Power Products "Half-Bridge" IGBT INT-A-PAK Standard Speed IGBT , 100 A FEATURES • Standard speed PT IGBT technology • Standard speed: DC to 1 kHz, optimized for hard switching speed • FRED Pt antiparallel diodes with fast recovery
|
Original
|
GA100TS60SFPbF
E78996
2002/95/EC
18-Jul-08
GA100TS60SFPbF
tig ac inverter circuit
E78996 datasheet bridge
tig IGBT module
E78996
tig 180 inverter welding
tig ac inverter circuit 180
|
PDF
|
GA100NA60UP
Abstract: No abstract text available
Text: GA100NA60UP Vishay Semiconductors Insulated Gate Bipolar Transistor Warp 2 Speed IGBT , 100 A FEATURES • Ultrafast: Optimized for minimum saturation voltage and speed 0 to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses
|
Original
|
GA100NA60UP
E78996
2002/95/EC
OT-227
18-Jul-08
GA100NA60UP
|
PDF
|
GA100TS60SFPbF
Abstract: tig 180 inverter welding GA100TS60SF
Text: GA100TS60SFPbF Vishay High Power Products "Half-Bridge" IGBT INT-A-PAK Standard Speed IGBT , 100 A FEATURES • Standard speed PT IGBT technology • Standard speed: DC to 1 kHz, optimized for hard switching speed • FRED PtTM antiparallel diodes with fast recovery
|
Original
|
GA100TS60SFPbF
18-Jul-08
GA100TS60SFPbF
tig 180 inverter welding
GA100TS60SF
|
PDF
|
GA100TS60SF
Abstract: GA100TS60SFPbF
Text: GA100TS60SFPbF Vishay High Power Products "Half-Bridge" IGBT INT-A-PAK Standard Speed IGBT , 100 A FEATURES • Standard speed PT IGBT technology • Fred PT antiparallel diodes with fast recovery RoHS • Very low conduction losses COMPLIANT • Al2O3 DBC
|
Original
|
GA100TS60SFPbF
12-Mar-07
GA100TS60SF
GA100TS60SFPbF
|
PDF
|
ge 142
Abstract: GA100TS60U
Text: PD -50055C GA100TS60U "HALF-BRIDGE" IGBT INT-A-PAK Ultra-FastTM Speed IGBT Features • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Very low conduction and switching losses
|
Original
|
-50055C
GA100TS60U
ge 142
GA100TS60U
|
PDF
|
GA100TS60SF
Abstract: GA100TS60SFPbF
Text: GA100TS60SFPbF Vishay High Power Products "Half-Bridge" IGBT INT-A-PAK Standard Speed IGBT , 100 A FEATURES • Standard speed PT IGBT technology • Standard speed: Optimized for hard switching operating frequencies DC to 1 kHz RoHS COMPLIANT • FRED PT antiparallel diodes with fast recovery
|
Original
|
GA100TS60SFPbF
12-Mar-07
GA100TS60SF
GA100TS60SFPbF
|
PDF
|
