Gex DIODE
Abstract: Gex 66 diode GEX 51 DIODE GEX 54 DIODE marking code KE diode diode marking GDE 38 SMJ30 diode Marking Code lm tvs diode GEP 86 A marking diode KE
Text: SURFACE MOUNT TVS DIODE Electrical Characteristics, 5.0 to 30 Volts TRANSIENT VOLTAGE SUPPRESSOR DIODE Operating Teperature: -55°c to 150°c RF Working Break Down Maximum Maximum Reverse Part Peak Voltage Clamping Current & Leakage Number Reverse VBR @ IT Voltage
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C5DB02
Gex DIODE
Gex 66 diode
GEX 51 DIODE
GEX 54 DIODE
marking code KE diode
diode marking GDE 38
SMJ30
diode Marking Code lm tvs
diode GEP 86 A
marking diode KE
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GEX 51 DIODE
Abstract: Gex DIODE Gex 66 diode marking code SM diode 218 Gex marking code KE diode diode GEP 86 A DIODE gde 18 diode gde 78 Diode GEG
Text: SURFACE MOUNT TVS DIODE Electrical Characteristics, 5.0 to 30 Volts TRANSIENT VOLTAGE SUPPRESSOR DIODE Operating Teperature: -55°c to 150°c RF Working Break Down Maximum Maximum Reverse Part Peak Voltage Clamping Current & Leakage Number Reverse VBR @ IT Voltage
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C5DB02
GEX 51 DIODE
Gex DIODE
Gex 66 diode
marking code SM diode
218 Gex
marking code KE diode
diode GEP 86 A
DIODE gde 18
diode gde 78
Diode GEG
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PIN diode SPICE model
Abstract: Microwave PIN diode spice Microwave PIN diode pin diode ge-2 transistor TM 937 UMX5601 V920 pin model spice MSC Microwave
Text: Spice Model Data for UMX5601 PIN Diode TM SPICE MODEL DATA The overall SPICE PIN diode model developed for the UMX5601 exhibits the equivalent circuit shown below where: - CPACK is the package capacitance L CONTACT is the contact inductance CI is the punch through I-region capacitance
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UMX5601
beta/11}
tau/13}
beta/15}
tau/17}
beta/19}
PIN diode SPICE model
Microwave PIN diode spice
Microwave PIN diode
pin diode
ge-2 transistor
TM 937
V920
pin model spice
MSC Microwave
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PK P6KE 200A
Abstract: SLD30-018 436 6V8A 1.5KA36CA N10H kt 201-500 P6KA36CA P6KA 335 Diode N10Z P6KA18CA
Text: PRODUCT CATALOG & DESIGN GUIDE DIODE Transient Voltage Suppression TVS Diode Products Littelfuse Circuit Prot Solutions Portf Consumer Electronics Telecom White Goods Medical Equipment TVSS and Power S DESIGN SUPPORT Live Application Design and Technical Support—Tap into our expertise. Littelfuse engineers are available around the world to help you address design challenges and develop
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EC111
EC2111v1E0804
PK P6KE 200A
SLD30-018
436 6V8A
1.5KA36CA
N10H
kt 201-500
P6KA36CA
P6KA 335
Diode N10Z
P6KA18CA
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GDE 13a DIODE
Abstract: diode marking GDE 38 diode 009 6V8A marking diode 47C sot23 NEC D 882 p GEX 36A DIODE Diode Gfg 6f MOTOROLA 727 36A Diode GFP 56A GFM 16A
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA SOTĆ23 Dual Monolithic Common Anode Zener MMBZ5V6ALT1 ADDITIONAL VOLTAGES AVAILABLE Transient Voltage Suppressor For ESD Protection Motorola Preferred Device This dual monolithic silicon zener diode is designed for applications requiring transient
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OT-23
GDE 13a DIODE
diode marking GDE 38
diode 009 6V8A
marking diode 47C sot23
NEC D 882 p
GEX 36A DIODE
Diode Gfg 6f
MOTOROLA 727 36A
Diode GFP 56A
GFM 16A
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bu 450 GDF
Abstract: SMA marking code LG sma marking code kn marking sm DO-214AA lg73 J15A marking sm marking SM 98 sma MARKING mp BQ 714
Text: SURFACE MOUNT Transient Voltage Suppressor TRANSIENT VOLTAGE SUPPRESSOR DIODE Operating Teperature: -55°c to 150°c RF Working Break Down Maximum Maximum Reverse Outline Part Peak Voltage Clamping Current & Leakage Dimensions in mm Number Reverse VBR @ IT Voltage
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C3B04
bu 450 GDF
SMA marking code LG
sma marking code kn
marking sm DO-214AA
lg73
J15A
marking sm
marking SM 98
sma MARKING mp
BQ 714
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bu 450 GDF
Abstract: diode gde 78 J15A GEZ DIODE SMA marking code LG GGG 92 marking sm J11A J14A J16A
Text: SURFACE MOUNT Transient Voltage Suppressor TRANSIENT VOLTAGE SUPPRESSOR DIODE Operating Teperature: -55°c to 150°c RF Working Break Down Maximum Maximum Reverse Outline Part Peak Voltage Clamping Current & Leakage Dimensions in mm Number Reverse VBR @ IT Voltage
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C3B04
bu 450 GDF
diode gde 78
J15A
GEZ DIODE
SMA marking code LG
GGG 92
marking sm
J11A
J14A
J16A
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bu 3 GDG 125
Abstract: marking CODE smb J36 diode 13.8 8w zener diode DO-214A sma marking sm RG DO-214AA smj58 24 DO-214A bu 450 GDF diode gde 61 81g diode
Text: SURFACE MOUNT Transient Voltage Suppressor TRANSIENT VOLTAGE SUPPRESSOR DIODE Operating Teperature: -55°c to 150°c RF Working Break Down Maximum Maximum Reverse Outline Part Peak Voltage Clamping Current & Leakage Dimensions in mm Number Reverse VBR @ IT Voltage
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C398BB02
C398BB03
bu 3 GDG 125
marking CODE smb J36 diode
13.8 8w zener diode
DO-214A sma
marking sm RG DO-214AA
smj58
24 DO-214A
bu 450 GDF
diode gde 61
81g diode
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GEZ 44 A diode
Abstract: No abstract text available
Text: Transient Voltage Suppression Diodes Surface Mount – 1500W > SMCJ-HR series SMCJ-HR Series RoHS Description TVS Diode Arrays SPA Family of Products Uni-directional The SMCJ-HR High Reliability series is designed specifically to protect sensitive electronic equipment from
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E230531
DO-214AB
16mm/7â
RS-481
GEZ 44 A diode
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Untitled
Abstract: No abstract text available
Text: Transient Voltage Suppression Diodes Surface Mount – 1500W > SMCJ-HRA series SMCJ-HRA Series RoHS Description TVS Diode Arrays SPA Family of Products Uni-directional The SMCJ-HRA High Reliability series is designed specifically to protect sensitive electronic equipment from
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-PRF-19500.
DO-214AB
16mm/13â
RS-481
16mm/7â
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diode BFT 99
Abstract: Diode GEP 5C Diode GFT DIODE BFT marking code GEZ DIODE GEZ 304 DIODES transient voltage suppressor diode diode marking GDE on semiconductor
Text: Features • ■ ■ Surface Mount SMC package Standoff Voltage: 5.0 to 170 volts Power Dissipation: 1500 watts CD214C Transient Voltage Suppressor Diode Series General Information The markets of portable communications, computing and video equipment are challenging the semiconductor industry to develop increasingly
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CD214C
DO-214AB
diode BFT 99
Diode GEP 5C
Diode GFT
DIODE BFT marking code
GEZ DIODE
GEZ 304 DIODES
transient voltage suppressor diode
diode marking GDE on semiconductor
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GEZ DIODES
Abstract: diode BFT 99 GFX DIODE GHM PF t54c 214B CD214C CD214C-T170A CD214C-T26A diode smc bfk
Text: Features • ■ ■ Surface Mount SMC package Standoff Voltage: 5.0 to 170 volts Power Dissipation: 1500 watts CD214C Transient Voltage Suppressor Diode Series General Information The markets of portable communications, computing and video equipment are challenging the semiconductor industry to develop increasingly
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CD214C
DO-214AB
bid004)
e/IPA0408
GEZ DIODES
diode BFT 99
GFX DIODE
GHM PF
t54c
214B
CD214C-T170A
CD214C-T26A
diode smc bfk
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diode BFT 99
Abstract: BEM 45 bfw 10 transistor GGT DIODE ON marking BHR marking code BFK GHM DIODE GFX DIODE GGR diode GHM PF
Text: oH V SC AV ER OM AI SIO PL LA N IA BL S NT E *R Features • ■ ■ ■ ■ Lead free versions available RoHS compliant lead free version * Surface Mount SMC package Standoff Voltage: 5.0 to 170 volts Power Dissipation: 1500 watts CD214C Transient Voltage Suppressor Diode Series
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CD214C
DO-214AB
diode BFT 99
BEM 45
bfw 10 transistor
GGT DIODE ON
marking BHR
marking code BFK
GHM DIODE
GFX DIODE
GGR diode
GHM PF
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GFX DIODE
Abstract: Diode GFK t100a GGR diode GGP DIODE diode gfm Diode T75A GGT DIODE ON BDP 284 diode marking GDE on semiconductor
Text: oH V SC AV ER OM AI SIO PL LA N IA BL S NT E *R Features • ■ ■ ■ ■ Lead free versions available RoHS compliant lead free version * Surface Mount SMC package Standoff Voltage: 5.0 to 170 volts Power Dissipation: 1500 watts CD214C Transient Voltage Suppressor Diode Series
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CD214C
DO-214AB
GFX DIODE
Diode GFK
t100a
GGR diode
GGP DIODE
diode gfm
Diode T75A
GGT DIODE ON
BDP 284
diode marking GDE on semiconductor
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BB130
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE b^E D Bi bb53T31 DD2b3ß5 'ÌSB BB130 A VARIABLE CAPACITANCE DIODE A single variable capacitance diode, in a plastic envelope. The diode is fo r tuning o f long, medium and short wavebands. Also suitable fo r frequency synthesizer applications.
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BB130
OD-69
BB130
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Untitled
Abstract: No abstract text available
Text: 5Ë GEC P L E S S E Y JANUARY 1996 S E M I C O N D U C T O R S DS4210-2.1 TV22.F FAST RECOVERY DIODE APPLICATIONS KEY PARAMETERS v RRM 1600V 305A | f AV 5000A FSM 70fiC Qr 3.2|is K • Induction Heating. ■ A.C. Motor Drives. ■ Snubber Diode. ■ Welding.
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DS4210-2
70fiC
TV2216F
TV2212F
2210F
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Untitled
Abstract: No abstract text available
Text: Bulletin 12037 International Ö Rectifier SERIES 45L R , 150K/L /KS(R) STANDARD RECOVERY DIODES Stud Version Features Alloy diode High current carrying capability High voltage ratings up to 1000V High surge current capabilities Stud cathode and stud anode version
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150K/L
5545E
00Ebfl53
4AS5452
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transistor c903
Abstract: No abstract text available
Text: P D - 9.1105 International Irai Rectifier IRGBC20KD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated UltraFast CoPack IGBT Features • • • • Short circuit rated -1 Ops @ 125°C, VGE = 15V Switching-loss rating includes all "tail" losses
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IRGBC20KD2
C-903
S5452
TQ-220AB
C-904
S54SS
transistor c903
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TLP834
Abstract: TLP1200 automatic door infrared sensor robot with wireless camera TLP816 wireless door BELL PRINTER POSITION SENSOR TLRA280 washing machine door lock TLP832
Text: 9 . Application Example of Photo Sensors 9-1 Application to optical rem ote-control systems Infrared LED Photo Diode TLN105B TPS703 TLN115A TPS704 TPS705 TPS706 37 9-3 Application to Printers Paper Paper Sensor IPaper feed Detection] iìnk/Ribbon End Detection]
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TLN105B
TLN115A
TPS703
TPS704
TPS705
TPS706
TLP800
TLP1000
TLP1200
TLP834
automatic door infrared sensor
robot with wireless camera
TLP816
wireless door BELL
PRINTER POSITION SENSOR
TLRA280
washing machine door lock
TLP832
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Untitled
Abstract: No abstract text available
Text: Bulletin 12101/A International [ïü] Rectifier 2oets. s e r ie s INPUT RECTIFIER DIODE t ! Desc ri pti o n/Featu res The 20ETS. rectifier series has been optimized for very low forward voltage drop, with moderate leakage. The glass passivation technology used
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12101/A
20ETS.
O-220AC
5S452
clD44
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Untitled
Abstract: No abstract text available
Text: PD-2.472 International ^R ectifier HFA80NC40CSL Ultrafast, Soft Recovery Diode HEXFRED BASE COMMON CATHODE Features VR = 400V O • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters V f = 1.3V Qrr * = 500nC d i r e c M / d t *
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HFA80NC40CSL
500nC
Liguria49
4A55452
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PS2031
Abstract: NEC ps2031
Text: N E C ELECTRONICS INC b427525 0 0 2 ^ 5 2 T • 30E D o £3 PHOTO COUPLER PS2031 PHOTO COUPLER High Collector to Emitter Voltage Single Transistor DESCRIPTION The PS2031 is an optically coupled isolator containing a GaAs light emitting diode and an NPN silicon photo transistor.
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b427525
PS2031
PS2031
b457S2S
J22686
--15--85M
NEC ps2031
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Untitled
Abstract: No abstract text available
Text: FAIRCHILD S E M IC O N D U C T O R August 1999 tm FDFS2P102 FETKEY P-Channel MOSFET with Schottky Diode General Description Features -3.3 A, -20 V. RDS 0N = 0.125 £2 @ VGS = -10 V Rdsion) = 0.200 £2 @ VGS = -4.5 V. Fairchild Semiconductor's FETKEY technology combines a
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FDFS2P102
FDFS2P102
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my 50
Abstract: PS2031 KY transistor NEC ps2031 12010C LC-1175 LC117
Text: NEC ELECTRONICS INC 30E D • T ~ Ì 83 i^STSSS QOETbSS T ■ PHOTO COUPLER O / _ P S 2031 PHOTO CO U PLER High Collector to Emitter Voltage Single Transistor DESCRIPTIO N The PS2031 is an optically coupled isolator containing a GaAs light emitting diode and an NPN silicon photo transistor.
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bi427Sa5
PS2031
PS2031
4S6-3111
J22686
my 50
KY transistor
NEC ps2031
12010C
LC-1175
LC117
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