diode GG 64
Abstract: diode GG 71 AF118 Low-Power Germanium PNP ACY39 2N240 2G201 2G302 2N3604 ACY24
Text: LOW-POWER GERMANIUM PNP Item Number Part Number 10 >= 2Gl024 2Gl024 2N2512 2N2512 2N2512 2G383 2G383 2G383 2Gl025 2Gl025 20 NKT237 ACY24 2Gl026 2Gl026 2Gl026 2G577 GT125L ACY17 ~~~g~~ 25 30 2Gl027 AF118 AF118 MA909 MA205 MA205 MA205 2N674 ~~~~~8 35 V BR CBO
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2Gl024
2N2512
2G383
2Gl025
2Gl025
diode GG 64
diode GG 71
AF118
Low-Power Germanium PNP
ACY39
2N240
2G201
2G302
2N3604
ACY24
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Low-Power Germanium PNP
Abstract: 2N1377 2n1375 TR526 2N524A 2N3428 2n525a diode GG 64 2N1432 AC123
Text: LOW-POWER GERMANIUM PNP Item Number Part Number 10 15 20 >= 2G524 2Nl057 2N1371 2N1375 ACY16 TRS50 TR650 TR650 2N1997 2N597 2N2382 2N524A TR43A TR43A TR43A 2G525 2G525 2G525 CK658 CKS5C 30 CK65 CK65A 2N1451 TR43 TR43 TR43 2N1447 2N526 ~~:~~ 35 40 TR461 2N237
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2G524
2Nl057
2N1371
2N1375
ACY16
TRS50
TR650
2N1997
2N597
Low-Power Germanium PNP
2N1377
TR526
2N524A
2N3428
2n525a
diode GG 64
2N1432
AC123
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nkt270
Abstract: Low-Power Germanium PNP 2N2635 2G30 2N2209 TR104 tr320 2g603 2N426 2N801
Text: LOW-POWER GERMANIUM PNP Item Number . Part Number V BR CBO 5 10 2N413 2N413A 2N809 2N810 2N112 2N112A 2N1681 2N396A 2G396 2G396 ~~~~~ 15 20 -25 30 -35 40 2G303 2G303 2G303 2N801 2N802 2N426 2N1171 2N1017 NKT224 2G382 2G382 NKT221 NKT228 NKT303 2N623 TI385
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2N413
2N413A
2N809
2N810
2N112
2N112A
2N1681
2N396A
2G396
nkt270
Low-Power Germanium PNP
2N2635
2G30
2N2209
TR104
tr320
2g603
2N426
2N801
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BC352* CSR
Abstract: csr BC352 2N936 Emihus 2N828 MPS5143 Bc352 LOW-POWER SILICON PNP 2N850 transitron
Text: LOW-POWER SILICON PNP Item Number Part Number 10 15 20 30 Motorola Motorola See Index See Index See Index See Index See Index See Index See Index See Index ~ee In~ex See Index Motorola See Index See Index Space Power Genrl Diode Diode Trails See Index See Index
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MPS5142
MPS5143
2N998
2N3677
2N2411
2N1991
PN5143
2N5143
2N2802
2N2803
BC352* CSR
csr BC352
2N936
Emihus
2N828
Bc352
LOW-POWER SILICON PNP
2N850
transitron
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2SB641 r
Abstract: 2SB641 2N3633 2N3608 2N3588 BC381 2N3642 3SM diode LOW-POWER SILICON PNP 2N3524
Text: LOW-POWER SILICON PNP Item Number Part Number 2N1221 2S3030 2S3030 BCZ10 2S302 HA9048 HA9048 TP3S38 2N923 BCY28 5 10 ~~T~~8A 2S3230 A5T3S38 2N2696 2N2927 OC200 OC200 SS3638 TMPT3S38 15 20 ~~~~~8 MPS3638 A5T5226 2N5226 PN3638 2N2695 2N3638 2S323 2S323 25 30
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2N1221
2S3030
BCZ10
2S302
HA9048
TP3S38
2N923
BCY28
2SB641 r
2SB641
2N3633
2N3608
2N3588
BC381
2N3642
3SM diode
LOW-POWER SILICON PNP
2N3524
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2SB641
Abstract: BC181 3SM diode CS9012 SF158 2S302 LOW-POWER SILICON PNP 2N924 BCZ10 HA9048
Text: LOW-POWER SILICON PNP Item Number Part Number 2N1221 2S3030 2S3030 BCZ10 2S302 HA9048 HA9048 TP3S38 2N923 BCY28 5 10 ~~T~~8A 2S3230 A5T3S38 2N2696 2N2927 OC200 OC200 SS3638 TMPT3S38 15 20 ~~~~~8 MPS3638 A5T5226 2N5226 PN3638 2N2695 2N3638 2S323 2S323 25 30
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2N1221
2S3030
BCZ10
2S302
HA9048
TP3S38
2N923
BCY28
2SB641
BC181
3SM diode
CS9012
SF158
LOW-POWER SILICON PNP
2N924
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bc352
Abstract: KM90 BC370 K9015 2N3341 2N5242 OC201 2u 64 diode
Text: LOW-POWER SILICON PNP Item Number Part Number 10 15 20 30 Motorola Motorola See Index See Index See Index See Index See Index See Index See Index See Index ~ee In~ex See Index Motorola See Index See Index Space Power Genrl Diode Diode Trails See Index See Index
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MPS5142
MPS5143
2N998
2N3677
2N2411
2N1991
PN5143
2N5143
2N2802
2N2803
bc352
KM90
BC370
K9015
2N3341
2N5242
OC201
2u 64 diode
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MRF212
Abstract: b0507 MRF221 motorola diode b0106A B12 nec diode 2sc94 2n5861 2N4127 MRF603
Text: RF POWER SILICON NPN Item Number Part Number I C 5 10 >= 20 2SC92 2SC94 2N5590 2S01614 2S01614 TN3252 BlY21 2N5861 ~~g~~~~ 25 30 ZTX649 B0505 B0505 B0505 B0505•1 B0505·1 B0505·5 B0507 ~g~g~ 35 40 B0507-1 B0507·5 B0509 B0509 B0509 B0509-1 B0509-5 2N5413
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OT-161
92var
StR-10
OT-123var
O-220
MRF212
b0507
MRF221
motorola diode
b0106A
B12 nec diode
2sc94
2n5861
2N4127
MRF603
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Low-Power Germanium PNP
Abstract: 2N218 ASZ20 2N295 Diode 13M 2N2374 2n274 CK66A 2N466 TO9 package
Text: LOW-POWER GERMANIUM PNP Item Number Part Number 5 10 15 20 25 30 2N422 2Nl09 2N217 2N274 2N633 2N1415 2N1866 2N1998 2N598 GT125SZ GT125V 2N602A 2N1175 2N1175A 2N1309A 2S8461 2Nl174 CK668 CK66C 2N466 eK66 CK66A GT125G 2N600 2N2374 PTC145 CK678 CK67C 2N467 CK67
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2N422
2Nl09
2N217
2N274
2N633
2N1415
2N1866
2N1998
2N598
GT125SZ
Low-Power Germanium PNP
2N218
ASZ20
2N295
Diode 13M
2N2374
CK66A
2N466
TO9 package
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MPS9680
Abstract: transistor 2N4258 2N2002 2N2424 2N2425 LOW-POWER SILICON PNP OC202 sor2894 BCY24 CS9020
Text: LOW-POWER SILICON PNP Item Number Part Number 10 2N2165 2N2166 2N2162 2N2163 2N2167 2N2164 2N1676 2N1677 2N2002 2N2003 ~~~~~~ 15 20 2N3764A 2N3764A 2N2424 BC201 2N3319 2N2280 2N2281 2N864 ~N14~~ 25 30 2N1428 2N1429 2N864A 2N864A 2N864A 2N4006 2N2177 2N2178
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2N2165
2N2166
2N2162
2N2163
2N2167
2N2164
2N1676
2N1677
2N2002
2N2003
MPS9680
transistor 2N4258
2N2424
2N2425
LOW-POWER SILICON PNP
OC202
sor2894
BCY24
CS9020
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Untitled
Abstract: No abstract text available
Text: SKDH 115 SEMIPONTTM 5 Half Controlled 3-phase Bridge Rectifier N<OP N<<PC NK<P QK R SST U ;6477 %0+4)*.%0= N SITT N SITT ;1- R VT W$= OXK5 SSHYSI SFTT SFTT OXK5 SSHYSF Symbol Conditions Values Units QK 1- R VT W$ SST U Q1OPC QJOP 1LZ R IH W$[ ST &1LZ R SIH W$[ ST &1LZ R IH W$[ VCG DDD ST &-
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Untitled
Abstract: No abstract text available
Text: SKDH 145 SEMIPONTTM 5 Half Controlled 3-phase Bridge Rectifier N<OP N<<PC NK<P QK R STU V ;6477 %0+4)*.%0= N SGUU N SIUU ;1- R WU X$= OYK5 STHZSI S[UU SFUU OYK5 STHZSF Symbol Conditions Values Units QK 1- R WU X$ SSU V Q1OPC QJOP 1L¥ R IH X$] SU &1L¥ R SIH X$] SU &1L¥ R IH X$] WCG DDD SU &-
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gc 5.5V 1.0F
Abstract: AN 17823 17823 OLED driver IC MXED101 MXED101DI MXED101TP 5.5V 1.0f GC
Text: MXED101 30V, 192-Channel OLED Display Driver General Description Features: • CMOS technology • 192 Precision outputs • Programmable output current control • Optimized adjacent channel and chip-to-chip output matching • 3.3V or 5V logic supply voltage
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MXED101
192-Channel
MXED101TP)
MXED101DI)
MXED101
192-output
DS-MXED101-R9
gc 5.5V 1.0F
AN 17823
17823
OLED driver IC
MXED101DI
MXED101TP
5.5V 1.0f GC
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Untitled
Abstract: No abstract text available
Text: PDSP16330/A/B HEADQUARTERS OPERATIONS GEC PLESSEY SEMICONDUCTORS Cheney Manor, Swindon, Wiltshire SN2 2QW, United Kingdom. Tel: 0793 518000 Fax: (0793) 518411 GEC PLESSEY SEMICONDUCTORS P.O. Box 660017 1500 Green Hills Road, Scotts Valley, California 95067-0017,
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PDSP16330/A/B
7023s
10MHz
84-pin
PDSP16112
PDSP16116
PDSP16318
PDSP16340
PDSP16350
PDSP16510A
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BA204
Abstract: BA-204
Text: TELEFUNKEN ELECTRONIC 17E » • ÖTEDO^b OOD'ÌTIB 5 H A L GG BA 204 IM electronic Creative Technologies Silicon Fpitaxial Planar Diode Applications: General purpose Dimensions in mm Cathoda =>26 1 1 <3.9 g<ass -—' - n u— Standard glass case
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DIODE byv10-20
Abstract: BYV10 BYV1020 JTP 55 diode BYV10-20 U-28
Text: N AMER PHILIPS/ DIS CRETE b'IE D • bbSa^ai GG E b b M 1! bfc>4 HIAPX BYV10 J l SCHOTTKY BARRIER DIODE Schottky barrier diode w ith an integrated p-n junction protection ring in a SOD81 glass envelope and intended fo r use in low output voltage, low-power switch-mode power supplies and, in general, in
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BYV10
BYV10-20
BYV10-20
DIODE byv10-20
BYV10
BYV1020
JTP 55 diode
U-28
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mc145406
Abstract: LOG RX2 1005 log rx2 1015
Text: MOTOROLA Order this document by MC145406/D SEMICONDUCTOR TECHNICAL DATA M C 1 45406 Driver/Receiver EIA 232-E and CCITT V.28 Formerly R S-232-D P SUFFIX PLASTIC CASE 648 The MC145406 is a silico n-g ate CMOS IC that combines three drivers and three receivers to fu lfill the electrical specifications of standards
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MC145406/D
232-E
S-232-D
MC145406
MC145406
LOG RX2 1005
log rx2 1015
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Untitled
Abstract: No abstract text available
Text: T O SH IB A 2SK2964 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2-7r-MOSVI 2 S K2 9 64 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS 4V Gate Drive Low Drain-Source ON Resistance : Rd S (ON) = 0-13^ (Typ.)
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2SK2964
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S14936DY
Abstract: No abstract text available
Text: Q IM O TD ^L [ F & E ^ S I Final Electrical Specifications u m TECHNOLOGY LTC1479 PowerPath C ontroller for Dual Battery Systems D ecem ber 1996 f€ATUA€S DCSCRIPTIOH • Complete Power Path Management for Two Batteries, DC Power Source, Charger and Backup
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LTC1479
LTC1479
LT1511
LTC1538-AUX
LT1620
LTC1435
LT1621
001447S
S14936DY
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U860 diode
Abstract: diode U860 diode avalanche DSA U860 tc 40138 DIODE DSA 18 diode avalanche DSA VRRM 2300 DSA VRRM 2300 G DSA 908-44 A G diode avalanche DSA 603
Text: A S E A b Ro u n /abb AB seuicon D I 00MÛ3DÛ □OGOlhl 7 * T -o \- Netzdioden Vrrm 1 Diode I 1 DS Ki DSA 1 1 T yp /type 1 I I Rectifier diodes S21 - I I 1 I FAV1 400-11 KC, NC 400-14 KC, NC 400-17 KC, NC 400-20 KC, NC 400-23 KC.NC ft If s m If a v m A °C A
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00Mfl3Dfl
To-50Â
400-11KC,
D2950
U860 diode
diode U860
diode avalanche DSA
U860
tc 40138
DIODE DSA 18
diode avalanche DSA VRRM 2300
DSA VRRM 2300
G DSA 908-44 A G
diode avalanche DSA 603
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diode GG 71
Abstract: Stand Alone FFT Processor diode GG 79 l3915 diode GG 64 PDSP16112 PDSP16116 m15m0 PDSP16330 PDSP16330A
Text: P B y G E C PLESSEY ADVANCE INFORMATION 0S3884 • 1.1 P D S P 1 6 3 3 0 /A /B PYTHAGORAS PROCESSOR Supersedes verston in December 1993 Digital Video & Digital Signal Processing 1C Handbook, HB3923-1 The PDSP16330 is a high speed digital CMOS IC that converts Cartesian data (Real and Imaginary) intoPolarform
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ds3884
PDSP16330/A/B
HB3923-1)
PDSP16330
20MHz.
10MHz
10MHZ
diode GG 71
Stand Alone FFT Processor
diode GG 79
l3915
diode GG 64
PDSP16112
PDSP16116
m15m0
PDSP16330A
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Untitled
Abstract: No abstract text available
Text: GEC PLESSEY ADVANCE INFORMATION S t* M I C O IN D U C T O K S P D S P 1 6 3 3 0 /A /B PYTHAGORAS PROCESSOR Supersedes version in December 1993 Digital Video & Digital Signal Processing 1C Handbook, HB3923-1 The PDSP16330 is a high speed digital CMOS IC that
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HB3923-1)
PDSP16330
20MHz.
PDSP16330
PDSP16330A
PDSP16330B
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Untitled
Abstract: No abstract text available
Text: P JpJ G E C PLESSEY PRELIM INA R Y INFORMATION DS36&4 - 1.0 PDSP16330/A/B PYTHAGORAS PROCESSOR The PDSP16330 is a high speed digital CMOS ICthat converts Cartesian data Real and Imaginary into Polar form (Magnitude and Phase), at rates up to 20MHz. Cartesian
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PDSP16330/A/B
PDSP16330
20MHz.
10MHz
PDSP16330A)
25MHz
PDSP16330)
MILSTD-883
10MHZ
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Untitled
Abstract: No abstract text available
Text: V LASER DIODE DRIVER w ith o u t p u t e n a b le SYNERG Y PRELIMINARY s y io o e lio o 3 SEMICONDUCTOR DESCRIPTION FEATURES Up to 1.25Gb/s operation The SY100EL1003 is a high speed current source for driving a sem iconductor laser diode in optical transm ission
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25Gb/s
SY100EL1003
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