IN3492
Abstract: sg 4001 diode 1NA4 md914 35C10 1N20b 1n67a 0a202 diode iN3495 1469r
Text: NIAX VAX U E S 0 2 5 ° D IO D E Vw PRV If Vf IR T Y P E u S E 0A5 100 .3 5 1 .3 30 G GP 0 A6 60 .3 5 1 .3 9 .0 G GP 0A7 30 .2 5 1 .7 6 .0 G SW O A IO 30 1 .0 .9 5 600 G SW OA3I 85 12 0 .7 40 G GP 0A47 30 .1 5 .6 5 10 G 0A70 2 2 .5 . 15 .2 5 30 G RF OA71 90
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3E120
450E120R
450F05
450F05R
450F10
450F10R
450F20
450F20R
450F30
450F30R
IN3492
sg 4001 diode
1NA4
md914
35C10
1N20b
1n67a
0a202 diode
iN3495
1469r
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Untitled
Abstract: No abstract text available
Text: PD - 94927A IRFB41N15DPbF IRFIB41N15DPbF IRFS41N15DPbF IRFSL41N15DPbF Applications l l HEXFET Power MOSFET High frequency DC-DC converters Lead-Free VDSS RDS on max Benefits l l l Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including
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4927A
IRFB41N15DPbF
IRFIB41N15DPbF
IRFS41N15DPbF
IRFSL41N15DPbF
AN1001)
O-220AB
O-220
O-262
IRFB41N15D
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diode gp 429
Abstract: diode gp 421 a6t diode diode gp 634 marking aag AN1001 AN-994 IRFB41N15D gp 001 diode IRFS41N15D
Text: PD - 94927A IRFB41N15DPbF IRFIB41N15DPbF IRFS41N15DPbF IRFSL41N15DPbF Applications l l HEXFET Power MOSFET High frequency DC-DC converters Lead-Free VDSS RDS on max Benefits l l l Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including
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4927A
IRFB41N15DPbF
IRFIB41N15DPbF
IRFS41N15DPbF
IRFSL41N15DPbF
AN1001)
O-220AB
O-220
O-262
IRFB41N15D
diode gp 429
diode gp 421
a6t diode
diode gp 634
marking aag
AN1001
AN-994
gp 001 diode
IRFS41N15D
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Untitled
Abstract: No abstract text available
Text: PD - 94927A IRFB41N15DPbF IRFIB41N15DPbF IRFS41N15DPbF IRFSL41N15DPbF Applications l l HEXFET Power MOSFET High frequency DC-DC converters Lead-Free VDSS RDS on max Benefits l l l Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including
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Original
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4927A
IRFB41N15DPbF
IRFIB41N15DPbF
IRFS41N15DPbF
IRFSL41N15DPbF
AN1001)
O-220AB
O-220
O-262
IRFB41N15D
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BTS 130
Abstract: bts 159 calculation of line diSTANCE relay REL 670 cq 724 g diode S78 SMD bts 2106 BTS 780 GP BTS 7710 G BTS780 GP 839 DIODE
Text: trilithic_cov.fm Seite 1 Dienstag, 30. November 1999 7:03 19 S p e c i a l S u b j e c t B o o k N o v. 1 9 9 9 T R I L I T H IC TM High Current Motor Driver M eet th e Second G en er ati o n h t t p : / / w w w. i n f i n e o n . c o m P ow e r S e m i c o nd u cto rs
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D-81541
B112-H6991-G2-X-7600
BTS 130
bts 159
calculation of line diSTANCE relay REL 670
cq 724 g diode
S78 SMD
bts 2106
BTS 780 GP
BTS 7710 G
BTS780
GP 839 DIODE
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IRF AN1001
Abstract: IRF6218S AN1001 IRF6218L IRF6218S-l
Text: PD - 95863A IRF6218S IRF6218L SMPS MOSFET HEXFET Power MOSFET Applications l VDSS Reset Switch for Active Clamp Reset DC-DC converters RDS on max -150V 150m:@VGS = -10V ID -27A Benefits l l l Low Gate to Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including
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5863A
IRF6218S
IRF6218L
-150V
AN1001)
O-262
AN-994.
IRF AN1001
IRF6218S
AN1001
IRF6218L
IRF6218S-l
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AN1001
Abstract: IRF6218L IRF6218S
Text: PD - 95863 IRF6218S IRF6218L SMPS MOSFET HEXFET Power MOSFET Applications l Reset Switch for Active Clamp Reset DC-DC converters VDSS RDS on max -150V 150m:@VGS = -10V ID -27A Benefits l l l Low Gate to Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including
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IRF6218S
IRF6218L
-150V
AN1001)
O-262
-520A/
AN-994.
AN1001
IRF6218L
IRF6218S
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IRFS52N15D
Abstract: No abstract text available
Text: PD - 94815 IRFB52N15DPbF IRFS52N15D IRFSL52N15D SMPS MOSFET Applications l l High frequency DC-DC converters Lead-Free only the TO-220AB version is currently available in a lead-free configuration Benefits Low Gate-to-Drain Charge to Reduce Switching Losses
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IRFB52N15DPbF
IRFS52N15D
IRFSL52N15D
O-220AB
AN1001)
IRFS52N15D
O-262
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AN1001
Abstract: AN-994 IRFS52N15D IRFSL52N15D
Text: PD - 94815 IRFB52N15DPbF IRFS52N15D IRFSL52N15D SMPS MOSFET Applications l l High frequency DC-DC converters Lead-Free only the TO-220AB version is currently available in a lead-free configuration Benefits Low Gate-to-Drain Charge to Reduce Switching Losses
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IRFB52N15DPbF
IRFS52N15D
IRFSL52N15D
O-220AB
AN1001)
O-220AB
IRFB52N15DPbF
O-262
AN1001
AN-994
IRFS52N15D
IRFSL52N15D
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IRF3710S
Abstract: IRF3710L IRF 450 MOSFET AN-994 IRF3710
Text: PD - 94201A IRF3710S IRF3710L l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated HEXFET Power MOSFET D VDSS = 100V RDS on = 23mΩ G ID = 57A S Description
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4201A
IRF3710S
IRF3710L
EIA-418.
IRF3710S
IRF3710L
IRF 450 MOSFET
AN-994
IRF3710
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IRL3713S
Abstract: No abstract text available
Text: PD - 97011A IRL3713PbF IRL3713SPbF IRL3713LPbF SMPS MOSFET Applications High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Computer Processor Power l 100% RG Tested l Lead-Free
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7011A
IRL3713PbF
IRL3713SPbF
IRL3713LPbF
O-220AB
IRL3713PbF
IRL3713SPbF
O-262
O-220A
IRL3713S
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AN-994
Abstract: IRFZ46N IRFZ46NL IRFZ46NS to262 pcb footprint
Text: PD - 91305C Advanced Process Technology l Surface Mount IRFZ46NS l Low-profile through-hole (IRFZ46NL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description IRFZ46NS IRFZ46NL HEXFET Power MOSFET l D VDSS = 55V RDS(on) = 0.0165Ω
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91305C
IRFZ46NS)
IRFZ46NL)
IRFZ46NS
IRFZ46NL
EIA-418.
AN-994
IRFZ46N
IRFZ46NL
IRFZ46NS
to262 pcb footprint
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ak 957 1542 d
Abstract: AN-994 IRL530N IRL530NL IRL530NS
Text: PD - 91349C IRL530NS/L HEXFET Power MOSFET Advanced Process Technology l Surface Mount IRL530NS l Low-profile through-hole (IRL530NL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description l D VDSS =100V RDS(on) = 0.10Ω G11
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91349C
IRL530NS/L
IRL530NS)
IRL530NL)
die22
EIA-418.
ak 957 1542 d
AN-994
IRL530N
IRL530NL
IRL530NS
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ak 957 1542 d
Abstract: AN-994 IRL530N IRL530NL IRL530NS IRL530NSL
Text: PD - 91349C IRL530NS/L HEXFET Power MOSFET Advanced Process Technology l Surface Mount IRL530NS l Low-profile through-hole (IRL530NL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description l D VDSS =100V RDS(on) = 0.10Ω G11
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91349C
IRL530NS/L
IRL530NS)
IRL530NL)
EIA-418.
ak 957 1542 d
AN-994
IRL530N
IRL530NL
IRL530NS
IRL530NSL
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IRFZ46NL
Abstract: IGBT GS AN-994 IRFZ46N IRFZ46NS Voltage Regulator 5V 10V for IRFZ46N
Text: PD - 91305C Advanced Process Technology l Surface Mount IRFZ46NS l Low-profile through-hole (IRFZ46NL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description IRFZ46NS IRFZ46NL HEXFET Power MOSFET l D VDSS = 55V RDS(on) = 0.0165Ω
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91305C
IRFZ46NS)
IRFZ46NL)
IRFZ46NS
IRFZ46NL
EIA-418.
IRFZ46NL
IGBT GS
AN-994
IRFZ46N
IRFZ46NS
Voltage Regulator 5V 10V
for IRFZ46N
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1N6227
Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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IC HXJ 2038
Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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AN-994
Abstract: C-150 IRGB30B60K IRGS30B60K IRGSL30B60K
Text: PD - 94799A IRGB30B60K IRGS30B60K IRGSL30B60K INSULATED GATE BIPOLAR TRANSISTOR VCES = 600V C Features • • • • • IC = 50A, TC=100°C at TJ=175°C Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient.
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4799A
IRGB30B60K
IRGS30B60K
IRGSL30B60K
O-220AB
O-262
O-220AB
AN-994
C-150
IRGB30B60K
IRGS30B60K
IRGSL30B60K
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3707S
Abstract: "current regulator" IRF3707PBF 4.5v to 100v input regulator
Text: PD - 94813 IRF3707PbF IRF3707S IRF3707L SMPS MOSFET Applications High Frequency DC-DC Isolated Converters with Synchronous Rectification for Telecom and Industrial use l High Frequency Buck Converters for Computer Processor Power l Lead-Free only the TO-220AB version is
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O-220AB
IRF3707PbF
IRF3707S
IRF3707L
O-262
EIA-418.
3707S
"current regulator"
4.5v to 100v input regulator
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3704s
Abstract: IRF3704L 4.5V TO 100V INPUT REGULATOR
Text: PD - 94814 IRF3704PbF IRF3704S IRF3704L SMPS MOSFET Applications l High Frequency DC-DC Isolated Converters with Synchronous Rectification for Telecom and Industrial use l High Frequency Buck Converters for Computer Processor Power l Lead-Free only the TO-220AB version is
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O-220AB
IRF3704PbF
IRF3704S
IRF3704L
IRF3704S
IRF3704PbF
O-262
EIA-418.
3704s
IRF3704L
4.5V TO 100V INPUT REGULATOR
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IRF3707ZCL
Abstract: IRF3707ZCS
Text: PD - 94784B IRF3707ZCS IRF3707ZCL Applications l High Frequency Synchronous Buck Converters for Computer Processor Power HEXFET Power MOSFET VDSS RDS on max 9.5m: 30V Benefits l Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage
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94784B
IRF3707ZCS
IRF3707ZCL
O-262
IRF3707ZCL
IRF3707ZCS
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PDF
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IRF3707ZCL
Abstract: IRF3707ZCS
Text: PD - 94784B IRF3707ZCS IRF3707ZCL Applications l High Frequency Synchronous Buck Converters for Computer Processor Power HEXFET Power MOSFET VDSS RDS on max 9.5m: 30V Benefits l Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage
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94784B
IRF3707ZCS
IRF3707ZCL
O-262
AN-994.
IRF3707ZCL
IRF3707ZCS
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PDF
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95836
Abstract: AN-994 IRF3709ZCL IRF3709ZCS 9583 IRF370 14ab
Text: PD - 95836 IRF3709ZCS IRF3709ZCL Applications l High Frequency Synchronous Buck Converters for Computer Processor Power HEXFET Power MOSFET VDSS RDS on max 6.3m: 30V Benefits l Low RDS(on) at 4.5V VGS l Low Gate Charge l Fully Characterized Avalanche Voltage
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IRF3709ZCS
IRF3709ZCL
O-262
95836
AN-994
IRF3709ZCL
IRF3709ZCS
9583
IRF370
14ab
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95836
Abstract: 14AB AN-994 IRF3709ZCL IRF3709ZCS
Text: PD - 95836 IRF3709ZCS IRF3709ZCL Applications l High Frequency Synchronous Buck Converters for Computer Processor Power HEXFET Power MOSFET VDSS RDS on max 6.3m: 30V Benefits l Low RDS(on) at 4.5V VGS l Low Gate Charge l Fully Characterized Avalanche Voltage
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IRF3709ZCS
IRF3709ZCL
O-262
95836
14AB
AN-994
IRF3709ZCL
IRF3709ZCS
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PDF
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