HFA08TB60S
Abstract: IRFP250 Ultrafast Recovery diode 18ns
Text: PD-96037 HEXFRED HFA08TB60SPbF TM Ultrafast, Soft Recovery Diode Features Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free Benefits Reduced RFI and EMI Reduced Power Loss in Diode and Switching
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Original
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PD-96037
HFA08TB60SPbF
HFA08TB60S
HFA08T
IRFP250
Ultrafast Recovery diode 18ns
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PDF
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HFA08TB60S
Abstract: IRFP250
Text: PD-96037 HEXFRED HFA08TB60SPbF TM Ultrafast, Soft Recovery Diode Features Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free Benefits Reduced RFI and EMI Reduced Power Loss in Diode and Switching
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Original
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PD-96037
HFA08TB60SPbF
HFA08TB60S
12-Mar-07
IRFP250
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PDF
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Untitled
Abstract: No abstract text available
Text: PD-96037 HEXFRED HFA08TB60SPbF TM Ultrafast, Soft Recovery Diode Features Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free Benefits Reduced RFI and EMI Reduced Power Loss in Diode and Switching
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Original
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PD-96037
HFA08TB60SPbF
HFA08TB60S
08-Mar-07
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PDF
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HFA08TB60
Abstract: IRFP250
Text: PD -2.341 HFA08TB60 HEXFRED Ultrafast, Soft Recovery Diode TM Features Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Guaranteed Avalanche Specified at Operating Conditions Benefits Reduced RFI and EMI Reduced Power Loss in Diode and Switching
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Original
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HFA08TB60
HFA08TB60
IRFP250
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PDF
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MT5C1008DCJ-45/SMD a06t transistor
Abstract: No abstract text available
Text: PD-95737 HFA08TB60PbF HEXFRED Ultrafast, Soft Recovery Diode TM Features Benefits VF typ. * = 1.4V IF(AV) = 8.0A 4 Qrr (typ.)= 65nC IRRM = 5.0A 2 1 Reduced RFI and EMI Reduced Power Loss in Diode and Switching Transistor Higher Frequency Operation
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Original
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PD-95737
HFA08TB60PbF
HFA08TB60
08-Mar-07
MT5C1008DCJ-45/SMD a06t transistor
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PDF
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a06t
Abstract: hfa08tb60pbf B120 HFA08TB60 IRFP250
Text: PD-95737 HFA08TB60PbF HEXFRED Ultrafast, Soft Recovery Diode TM Features Benefits VF typ. * = 1.4V IF(AV) = 8.0A 4 Qrr (typ.)= 65nC IRRM = 5.0A 2 1 Reduced RFI and EMI Reduced Power Loss in Diode and Switching Transistor Higher Frequency Operation
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Original
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PD-95737
HFA08TB60PbF
HFA08TB60
HFA06T
a06t
hfa08tb60pbf
B120
IRFP250
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PDF
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a06t
Abstract: hfa08tb60pbf
Text: PD-95737 HFA08TB60PbF HEXFRED Ultrafast, Soft Recovery Diode TM Features Benefits VF typ. * = 1.4V IF(AV) = 8.0A 4 Qrr (typ.)= 65nC IRRM = 5.0A 2 1 Reduced RFI and EMI Reduced Power Loss in Diode and Switching Transistor Higher Frequency Operation
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Original
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PD-95737
HFA08TB60PbF
HFA08TB60
12-Mar-07
a06t
hfa08tb60pbf
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PDF
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Untitled
Abstract: No abstract text available
Text: VS-HFA08TB60SPbF www.vishay.com Vishay Semiconductors HEXFRED Ultrafast Soft Recovery Diode, 8 A FEATURES • Ultrafast and ultrasoft recovery • Very low IRRM and Qrr • Specified at operating conditions • AEC-Q101 qualified • Material categorization:
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Original
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VS-HFA08TB60SPbF
AEC-Q101
VS-HFA08TB60S
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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PDF
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HFA08TB60
Abstract: HFA08TB60 DIODE
Text: PD -2.341 International lO R Rectifier HFA08TB60 Ultrafast, Soft Recovery Diode HEXFRED Features • • • • • • VR = 600V Ultrafast Recovery Ultrasoft Recovery Very Low lRRM Very LowQrr Guaranteed Avalanche Specified at Operating Conditions Benefits
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OCR Scan
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HFA08TB60
40A/ps
HFA08TB60
HFA08TB60 DIODE
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PDF
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Untitled
Abstract: No abstract text available
Text: VS-HFA08TB60SPbF www.vishay.com Vishay Semiconductors HEXFRED Ultrafast Soft Recovery Diode, 8 A FEATURES • Ultrafast and ultrasoft recovery • Very low IRRM and Qrr • Specified at operating conditions • AEC-Q101 qualified • Material categorization:
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Original
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VS-HFA08TB60SPbF
AEC-Q101
VS-HFA08TB60S
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: VS-HFA08TB60SPbF www.vishay.com Vishay Semiconductors HEXFRED Ultrafast Soft Recovery Diode, 8 A FEATURES • Ultrafast and ultrasoft recovery • Very low IRRM and Qrr • Specified at operating conditions • AEC-Q101 qualified • Material categorization:
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Original
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VS-HFA08TB60SPbF
AEC-Q101
VS-HFA08TB60S
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: VS-HFA08TB60SPbF www.vishay.com Vishay Semiconductors HEXFRED Ultrafast Soft Recovery Diode, 8 A FEATURES • Ultrafast and ultrasoft recovery • Very low IRRM and Qrr • Specified at operating conditions • AEC-Q101 qualified D2PAK • Material categorization:
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Original
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VS-HFA08TB60SPbF
AEC-Q101
VS-HFA08TB60S
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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94047
Abstract: No abstract text available
Text: VS-HFA08TB60PbF Vishay Semiconductors HEXFRED Ultrafast Soft Recovery Diode, 8 A FEATURES • • • • Ultrafast and ultrasoft recovery Very low IRRM and Qrr Compliant to RoHS Directive 2002/95/EC Designed and qualified for industrial level BENEFITS •
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Original
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VS-HFA08TB60PbF
2002/95/EC
VS-HFA08TB60PbF
11-Mar-11
94047
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PDF
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Untitled
Abstract: No abstract text available
Text: VS-HFA08TB60HN3 www.vishay.com Vishay Semiconductors HEXFRED Ultrafast Soft Recovery Diode, 8 A FEATURES • Ultrafast and ultrasoft recovery • Very low IRRM and Qrr • AEC-Q101 qualified meets JESD 201 class 2 whisker test 2 • Material categorization:
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Original
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VS-HFA08TB60HN3
AEC-Q101
O-220AC
VS-HFA08TB60.
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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transistor 20607
Abstract: smd TRANSISTOR code marking 2F TRANSISTOR SMD MARKING CODE 2x 20607 SMD TRANSISTOR MARKING 9bb PD-20607 TRANSISTOR SMD MARKING CODE DM TRANSISTOR SMD 2x t HFA08TB6 TRANSISTOR SMD 2X K
Text: Preliminary Data Sheet PD -20607 rev. A 01/99 HFA08TB60S HEXFRED Ultrafast, Soft Recovery Diode TM Features K Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Guaranteed Avalanche Specified at Operating Conditions Benefits
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Original
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HFA08TB60S
HFA08TB60S
transistor 20607
smd TRANSISTOR code marking 2F
TRANSISTOR SMD MARKING CODE 2x
20607
SMD TRANSISTOR MARKING 9bb
PD-20607
TRANSISTOR SMD MARKING CODE DM
TRANSISTOR SMD 2x t
HFA08TB6
TRANSISTOR SMD 2X K
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PDF
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Untitled
Abstract: No abstract text available
Text: VS-HFA08TB60PbF, VS-HFA08TB60-N3 www.vishay.com Vishay Semiconductors HEXFRED Ultrafast Soft Recovery Diode, 8 A FEATURES • Ultrafast and ultrasoft recovery • Very low IRRM and Qrr • Compliant to RoHS Directive 2002/95/EC • Designed and JEDEC-JESD47
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Original
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VS-HFA08TB60PbF,
VS-HFA08TB60-N3
2002/95/EC
JEDEC-JESD47
O-220AC
VS-HFA08TB60.
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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PDF
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Untitled
Abstract: No abstract text available
Text: VS-HFA08TB60PbF, VS-HFA08TB60-N3 www.vishay.com Vishay Semiconductors HEXFRED Ultrafast Soft Recovery Diode, 8 A FEATURES • Ultrafast and ultrasoft recovery • Very low IRRM and Qrr • Compliant to RoHS Directive 2002/95/EC • Designed and JEDEC-JESD47
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Original
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VS-HFA08TB60PbF,
VS-HFA08TB60-N3
2002/95/EC
JEDEC-JESD47
O-220AC
O-220AC
VS-HFA08TB60.
2011/65/EU
2002/95/EC.
2002/95/EC
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PDF
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smd transistor b3
Abstract: No abstract text available
Text: HFA08TB60SPbF Vishay High Power Products HEXFRED Ultrafast Soft Recovery Diode, 8 A FEATURES • • • • • • • Ultrafast recovery Ultrasoft recovery Very low IRRM Very low Qrr Specified at operating conditions Compliant to RoHS directive 2002/95/EC
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Original
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HFA08TB60SPbF
2002/95/EC
AEC-Q101
HFA08TB60S
11-Mar-11
smd transistor b3
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PDF
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HFA08TB60
Abstract: IRFP250
Text: HFA08TB60PbF Vishay High Power Products HEXFRED Ultrafast Soft Recovery Diode, 8 A FEATURES • • • • • • • Base cathode 2 1 Cathode Ultrafast recovery Ultrasoft recovery Very low IRRM Very low Qrr Specified at operating conditions Lead Pb -free
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Original
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HFA08TB60PbF
O-220AC
HFA08TB60
18-Jul-08
IRFP250
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PDF
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HFA08TB60
Abstract: IRFP250
Text: HFA08TB60PbF Vishay High Power Products HEXFRED Ultrafast Soft Recovery Diode, 8 A FEATURES • • • • • • • Base cathode 2 1 Cathode Ultrafast recovery Ultrasoft recovery Very low IRRM Very low Qrr Specified at operating conditions Lead Pb -free
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Original
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HFA08TB60PbF
O-220AC
HFA08TB60
11-Mar-11
IRFP250
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PDF
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smd diode B3
Abstract: smd marking dt2
Text: HFA08TB60SPbF Vishay High Power Products HEXFRED Ultrafast Soft Recovery Diode, 8 A FEATURES • • • • • • • Ultrafast recovery Ultrasoft recovery Very low IRRM Very low Qrr Specified at operating conditions Compliant to RoHS directive 2002/95/EC
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Original
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HFA08TB60SPbF
2002/95/EC
AEC-Q101
HFA08TB60S
2011/65/EU
2002/95/EC.
2011/65/EU.
12-Mar-12
smd diode B3
smd marking dt2
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PDF
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HFA08TB60S
Abstract: IRFP250 HFA08TB60SPBF
Text: HFA08TB60SPbF Vishay High Power Products HEXFRED Ultrafast Soft Recovery Diode, 8 A FEATURES • • • • • • • Ultrafast recovery Ultrasoft recovery Very low IRRM Very low Qrr Specified at operating conditions Compliant to RoHS directive 2002/95/EC
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Original
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HFA08TB60SPbF
2002/95/EC
AEC-Q101
HFA08TB60S
11-Mar-11
IRFP250
HFA08TB60SPBF
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PDF
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Untitled
Abstract: No abstract text available
Text: HFA08TB60PbF Vishay High Power Products HEXFRED Ultrafast Soft Recovery Diode, 8 A FEATURES • • • • • • • Base cathode 2 1 Cathode Ultrafast recovery Ultrasoft recovery Very low IRRM Very low Qrr Specified at operating conditions Lead Pb -free
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Original
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HFA08TB60PbF
O-220AC
HFA08TB60
12-Mar-07
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PDF
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HFA08TB60S
Abstract: IRFP250
Text: HFA08TB60SPbF Vishay High Power Products HEXFRED Ultrafast Soft Recovery Diode, 8 A FEATURES • • • • • • • Ultrafast recovery Ultrasoft recovery Very low IRRM Very low Qrr Specified at operating conditions Compliant to RoHS directive 2002/95/EC
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Original
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HFA08TB60SPbF
2002/95/EC
AEC-Q101
HFA08TB60S
18-Jul-08
IRFP250
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PDF
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