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    DIODE HITACHI Search Results

    DIODE HITACHI Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE HITACHI Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    switching circuit

    Abstract: DIODE 19 9
    Text: Contents Section 1 Introduction. 1 Section 2 PIN Diode Features. 3 Section 3 Hitachi PIN Diode Product Line .


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    Text: HL1553 1.55 Jim Laser Diode with EA Modulator HITACHI Description The HL1553 is a 1.55 |jm InGaAsP distributed-feedback laser diode DFB-LD with a multi-quantum well (MQW) structure. An electroabsorption (EA) modulatoris integrated with the laser diode. It is


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    HL1553 HL1553 PDF

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    Abstract: No abstract text available
    Text: HL1553 1.55 |um Laser Diode with EA Modulator HITACHI Description The HL1553 is a 1.55 pm InGaAsP distributed-feedback laser diode DFB-LD with a multi-quantum well (MQW) structure. An electroabsorption (EA) modulatoris integrated with the laser diode. It is


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    HL1553 HL1553 PDF

    714 diode varicap

    Abstract: hitachi diode Hitachi Zener diodes 1SS106 04BZ Hitachi diodes using a zener diode as a varicap 05AZ HRC0203A GENERAL PURPOSE UHF MW MIXER DIODE
    Text: DIODE Hitachi Diode Products August, 2000 Product Marketing Dept. Multi Purpose Semiconductor Business Division Semiconductor & Integrated Circuits, HITACHI Ltd. HITACHI DIODE 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi′s or any third party′s patent, copyright,


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    ADE-A08-005E 714 diode varicap hitachi diode Hitachi Zener diodes 1SS106 04BZ Hitachi diodes using a zener diode as a varicap 05AZ HRC0203A GENERAL PURPOSE UHF MW MIXER DIODE PDF

    Ea 1530 A

    Abstract: No abstract text available
    Text: HL1566AF 1.55 pm Laser Diode with EA Modulator HITACHI Description The HL1566AF is a 1.55 pm InGaAsP distributed-feedback laser diode DFB-LD with a multi-quantum well (MQW) structure. An electroabsorption (EA) modulator is integratedwith the laser diode. It is


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    HL1566AF HL1566AF Ea 1530 A PDF

    HL1553

    Abstract: T 1553 Hitachi Scans-001
    Text: HL1553 1.55 Jim Laser Diode with EA Modulator HITACHI Description The HL1553 is a 1.55 |jm InGaAsP distributed-feedback laser diode DFB-LD with a multi-quantum well (MQW) structure. An electroabsorption (EA) modulatoris integrated with the laser diode. It is


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    HL1553 HL1553: HL1553 48832Gbps 10Ops T 1553 Hitachi Scans-001 PDF

    biconvex lens with focal length 1 m and diameter 25.4 mm

    Abstract: laser diode DVD 100mw DL-3147-011 laser diode toshiba 780nm 650nm laser diode 200mw TOLD9225M mitsubishi laser diode OPHIR pd200 collimated LED 670 nm DL3147-011
    Text: Laser Diodes, Optics, and Related Components - Optima Laser Diodes Laser Diode Mounting Kits Laser Diode Optics Glass Aspheric Lenses Plastic Aspheric Lenses Multi-element Lenses Diode Laser Modules OEM Diode Laser Modules Collimated Diode Lasers Optical Power


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    658nm ML1016R 685nm ML1012R 785nm ML64114R Revised11JUN99 biconvex lens with focal length 1 m and diameter 25.4 mm laser diode DVD 100mw DL-3147-011 laser diode toshiba 780nm 650nm laser diode 200mw TOLD9225M mitsubishi laser diode OPHIR pd200 collimated LED 670 nm DL3147-011 PDF

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    Abstract: No abstract text available
    Text: HL1553 1.55 |im Laser Diode with EA Modulator HITACHI Description The HL1553 is a 1.55 iin InGaAsP distributed-feedback laser diode (DFB-LD with a multi-quantum well (MQW) structure. An electroabsorption (EA) modulator is integrated with the laser diode. It is


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    HL1553 HL1553 PDF

    Ea 1530 A

    Abstract: No abstract text available
    Text: HL1566AF 1.55 im Laser Diode with EA Modulator HITACHI Description The HL1566AF is a 1.55 jim InGaAsP distributed-feedback laser diode (DFB-LD with a multi-quantum well (MQW) structure. An electroabsorption (EA) modulator is integrated with the laser diode. It is


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    HL1566AF HL1566AF ST-10 48832G Ea 1530 A PDF

    Ea 1530 A

    Abstract: nrz optical modulator HL1566AF Hitachi Scans-001
    Text: HL1566AF 1.55 ¡im Laser Diode with EA Modulator HITACHI Description The HL1566AF is a 1.55 |_im InGaAsP distributed-feedback laser diode DFB-LD with a multi-quantum well (MQW) structure. An electroabsorption (EA) modulator is integrated with the laser diode. It is


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    HL1566AF HL1566AF 48832Gbps Ea 1530 A nrz optical modulator Hitachi Scans-001 PDF

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    Abstract: No abstract text available
    Text: HL1566AF 1.55 jam Laser Diode with EA Modulator HITACHI Description The HL1566AF is a 1.55 |_im InGaAsP distributed-feedback laser diode DFB-LD with a multi-quantum well (MQW) structure. An electroabsorption (EA) modulator is integrated with the laser diode. It is


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    HL1566AF HL1566AF HL1566AFndicular) PDF

    1S2473 DIODE equivalent

    Abstract: 1S2473 equivalent diode cross reference 1s2473 DIODE marking S4 59A marking 62N SOT23 1S2471 equivalent UHF/VHF TV Tuner HITACHI DIODE 1N4148 LL-34 DIODE ZENNER C25 1N52xx
    Text: Status List HITACHI DIODE Vol.16-4 2002.11 Topic - Miniature Flat Lead Package Diode “HSN278WK” .2 Variable Capacitance Diodes for Electronic Tuning .4, 5


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    HSN278WK" HZC10 HZC11 HZC12 HZC13 HZC15 HZC16 HZC18 HZC20 HZC22 1S2473 DIODE equivalent 1S2473 equivalent diode cross reference 1s2473 DIODE marking S4 59A marking 62N SOT23 1S2471 equivalent UHF/VHF TV Tuner HITACHI DIODE 1N4148 LL-34 DIODE ZENNER C25 1N52xx PDF

    Aspheric Lens TO Can

    Abstract: 310-0065-780 305-0065-780 336 305 336-0808-830 lens laser diode HL6312G 785nm 780nm laser diode 300-0355-780
    Text: Optima Laser Diode Optics Cost Effective Lenses for Collimating and Focusing Laser Diodes Collimating and focusing a laser diode is perhaps the most critical prerequisite in any laser diode application. While the characteristics of a laser diode might be ideal for your


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    635nm 850nm. 01JAN01 Aspheric Lens TO Can 310-0065-780 305-0065-780 336 305 336-0808-830 lens laser diode HL6312G 785nm 780nm laser diode 300-0355-780 PDF

    diode d.a.t.a. book

    Abstract: hitachi diode "Hitachi Diode"
    Text: Hitachi Diode DATA BOOK HITACHI ADE-408-006A


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    ADE-408-006A diode d.a.t.a. book hitachi diode "Hitachi Diode" PDF

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    Abstract: No abstract text available
    Text: Hitachi Electronic Components Data Book Hitachi Diode m— r - - —


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    Abstract: No abstract text available
    Text: HL6712G AlGalnP Laser Diode HITACHI Description The HL6712G is 0.67 |_im band AlGalnP index-guided laser diode with a double heterostructure. It is suitable as light sources for barcode readers, levelers, laser printers, and various other types of optical


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    HL6712G HL6712G PDF

    diode hitachi

    Abstract: No abstract text available
    Text: HE8404SG GaAlAs Infrared Emitting Diode HITACHI Description The HE8404SG is a GaAlAs double heterojunction structure 820 nm band light emitting diode. suitable for use as the light source in a wide range of optical control and sensing equipment. Features •


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    HE8404SG HE8404SG 8404SG diode hitachi PDF

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    Abstract: No abstract text available
    Text: HE8404SG GaAlAs Infrared Emitting Diode HITACHI Description The HE8404SG is a GaAlAs double heterojunction structure 820 nm band light emitting diode. It is suitable for use as the light source in a wide range of optical control and sensing equipment. Features


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    HE8404SG HE8404SG HE8404SG: PDF

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    Abstract: No abstract text available
    Text: HE8811 GaAlAs Infrared Emitting Diode HITACHI Description The HE8811 is a GaAlAs infrared emitting diode with a double heterojunction structure. It is high brightness, high output power and fast response make it suitable as a light source in measuring instruments


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    HE8811 HE8811 PDF

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    Abstract: No abstract text available
    Text: HSB88WS Silicon Schottky Barrier Diode for Double Balanced Mixer HITACHI Features • • • • Small ÀVFand AC. Good for surface mounting on printed circuit board. Each diode can be biased. Wideband operation. Ordering Information Type No. M ark Package Code


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    HSB88WS ADE-208-026B HSB88W 200pF, PDF

    diode hitachi

    Abstract: LS190N 1000-1 POWER MODULE
    Text: DIODE MODULE Spec.No.SR2-SP-10001 R0 MDM800H45E2-H P1 Target Specification OUTLINE DRAWING FEATURES ∗ Low Reverse Recovery Loss diode module. ∗ Low noise recovery: Ultra soft fast recovery diode. ∗ High reverse recovery capability: Super HiRC Structure.


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    SR2-SP-10001 MDM800H45E2-H diode hitachi LS190N 1000-1 POWER MODULE PDF

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    Abstract: No abstract text available
    Text: HL7853MG GaAIAs Laser Diode HITACHI Description The HL7853MG is a high power 0.78 iin band GaAIAs laser diode with a multi-quantum well (MQW structure. It is suitable as a light source for optical disk memories, and various other types of optical equipment.


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    HL7853MG HL7853MG PDF

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    Abstract: No abstract text available
    Text: HL6314MG AlGalnP Laser Diode HITACHI Description The HL6314MG is a 0.63 |_im band AlGalnP laser diode with a multi-quantum well MQW structure. It is suitable as a light source for laser poiters and optical equipment for amusement. Application • Laser pointer


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    HL6314MG HL6314MG 635nm PDF

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    Abstract: No abstract text available
    Text: DIODE MODULE Spec.No.SR2-SP-09001 R1 P1 MDM800H45E2 Target Specification OUTLINE DRAWING FEATURES  Low VF diode module.  Low noise recovery: Ultra soft fast recovery diode.  High reverse recovery capability: Super HiRC Structure.  High reliability, high durability diodes.


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    SR2-SP-09001 MDM800H45E2 MDM800E45E2 PDF