switching circuit
Abstract: DIODE 19 9
Text: Contents Section 1 Introduction. 1 Section 2 PIN Diode Features. 3 Section 3 Hitachi PIN Diode Product Line .
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Abstract: No abstract text available
Text: HL1553 1.55 Jim Laser Diode with EA Modulator HITACHI Description The HL1553 is a 1.55 |jm InGaAsP distributed-feedback laser diode DFB-LD with a multi-quantum well (MQW) structure. An electroabsorption (EA) modulatoris integrated with the laser diode. It is
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HL1553
HL1553
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Untitled
Abstract: No abstract text available
Text: HL1553 1.55 |um Laser Diode with EA Modulator HITACHI Description The HL1553 is a 1.55 pm InGaAsP distributed-feedback laser diode DFB-LD with a multi-quantum well (MQW) structure. An electroabsorption (EA) modulatoris integrated with the laser diode. It is
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HL1553
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714 diode varicap
Abstract: hitachi diode Hitachi Zener diodes 1SS106 04BZ Hitachi diodes using a zener diode as a varicap 05AZ HRC0203A GENERAL PURPOSE UHF MW MIXER DIODE
Text: DIODE Hitachi Diode Products August, 2000 Product Marketing Dept. Multi Purpose Semiconductor Business Division Semiconductor & Integrated Circuits, HITACHI Ltd. HITACHI DIODE 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi′s or any third party′s patent, copyright,
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ADE-A08-005E
714 diode varicap
hitachi diode
Hitachi Zener diodes
1SS106
04BZ
Hitachi diodes
using a zener diode as a varicap
05AZ
HRC0203A
GENERAL PURPOSE UHF MW MIXER DIODE
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Ea 1530 A
Abstract: No abstract text available
Text: HL1566AF 1.55 pm Laser Diode with EA Modulator HITACHI Description The HL1566AF is a 1.55 pm InGaAsP distributed-feedback laser diode DFB-LD with a multi-quantum well (MQW) structure. An electroabsorption (EA) modulator is integratedwith the laser diode. It is
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Ea 1530 A
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HL1553
Abstract: T 1553 Hitachi Scans-001
Text: HL1553 1.55 Jim Laser Diode with EA Modulator HITACHI Description The HL1553 is a 1.55 |jm InGaAsP distributed-feedback laser diode DFB-LD with a multi-quantum well (MQW) structure. An electroabsorption (EA) modulatoris integrated with the laser diode. It is
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HL1553
HL1553:
HL1553
48832Gbps
10Ops
T 1553
Hitachi Scans-001
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biconvex lens with focal length 1 m and diameter 25.4 mm
Abstract: laser diode DVD 100mw DL-3147-011 laser diode toshiba 780nm 650nm laser diode 200mw TOLD9225M mitsubishi laser diode OPHIR pd200 collimated LED 670 nm DL3147-011
Text: Laser Diodes, Optics, and Related Components - Optima Laser Diodes Laser Diode Mounting Kits Laser Diode Optics Glass Aspheric Lenses Plastic Aspheric Lenses Multi-element Lenses Diode Laser Modules OEM Diode Laser Modules Collimated Diode Lasers Optical Power
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658nm
ML1016R
685nm
ML1012R
785nm
ML64114R
Revised11JUN99
biconvex lens with focal length 1 m and diameter 25.4 mm
laser diode DVD 100mw
DL-3147-011
laser diode toshiba 780nm
650nm laser diode 200mw
TOLD9225M
mitsubishi laser diode
OPHIR pd200
collimated LED 670 nm
DL3147-011
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Untitled
Abstract: No abstract text available
Text: HL1553 1.55 |im Laser Diode with EA Modulator HITACHI Description The HL1553 is a 1.55 iin InGaAsP distributed-feedback laser diode (DFB-LD with a multi-quantum well (MQW) structure. An electroabsorption (EA) modulator is integrated with the laser diode. It is
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HL1553
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Ea 1530 A
Abstract: No abstract text available
Text: HL1566AF 1.55 im Laser Diode with EA Modulator HITACHI Description The HL1566AF is a 1.55 jim InGaAsP distributed-feedback laser diode (DFB-LD with a multi-quantum well (MQW) structure. An electroabsorption (EA) modulator is integrated with the laser diode. It is
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HL1566AF
HL1566AF
ST-10
48832G
Ea 1530 A
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Ea 1530 A
Abstract: nrz optical modulator HL1566AF Hitachi Scans-001
Text: HL1566AF 1.55 ¡im Laser Diode with EA Modulator HITACHI Description The HL1566AF is a 1.55 |_im InGaAsP distributed-feedback laser diode DFB-LD with a multi-quantum well (MQW) structure. An electroabsorption (EA) modulator is integrated with the laser diode. It is
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HL1566AF
HL1566AF
48832Gbps
Ea 1530 A
nrz optical modulator
Hitachi Scans-001
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Untitled
Abstract: No abstract text available
Text: HL1566AF 1.55 jam Laser Diode with EA Modulator HITACHI Description The HL1566AF is a 1.55 |_im InGaAsP distributed-feedback laser diode DFB-LD with a multi-quantum well (MQW) structure. An electroabsorption (EA) modulator is integrated with the laser diode. It is
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HL1566AF
HL1566AF
HL1566AFndicular)
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1S2473 DIODE equivalent
Abstract: 1S2473 equivalent diode cross reference 1s2473 DIODE marking S4 59A marking 62N SOT23 1S2471 equivalent UHF/VHF TV Tuner HITACHI DIODE 1N4148 LL-34 DIODE ZENNER C25 1N52xx
Text: Status List HITACHI DIODE Vol.16-4 2002.11 Topic - Miniature Flat Lead Package Diode “HSN278WK” .2 Variable Capacitance Diodes for Electronic Tuning .4, 5
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HSN278WK"
HZC10
HZC11
HZC12
HZC13
HZC15
HZC16
HZC18
HZC20
HZC22
1S2473 DIODE equivalent
1S2473 equivalent
diode cross reference 1s2473
DIODE marking S4 59A
marking 62N SOT23
1S2471 equivalent
UHF/VHF TV Tuner HITACHI
DIODE 1N4148 LL-34
DIODE ZENNER C25
1N52xx
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Aspheric Lens TO Can
Abstract: 310-0065-780 305-0065-780 336 305 336-0808-830 lens laser diode HL6312G 785nm 780nm laser diode 300-0355-780
Text: Optima Laser Diode Optics Cost Effective Lenses for Collimating and Focusing Laser Diodes Collimating and focusing a laser diode is perhaps the most critical prerequisite in any laser diode application. While the characteristics of a laser diode might be ideal for your
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635nm
850nm.
01JAN01
Aspheric Lens TO Can
310-0065-780
305-0065-780
336 305
336-0808-830
lens laser diode
HL6312G
785nm
780nm laser diode
300-0355-780
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diode d.a.t.a. book
Abstract: hitachi diode "Hitachi Diode"
Text: Hitachi Diode DATA BOOK HITACHI ADE-408-006A
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ADE-408-006A
diode d.a.t.a. book
hitachi diode
"Hitachi Diode"
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Untitled
Abstract: No abstract text available
Text: Hitachi Electronic Components Data Book Hitachi Diode m— r - - —
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Abstract: No abstract text available
Text: HL6712G AlGalnP Laser Diode HITACHI Description The HL6712G is 0.67 |_im band AlGalnP index-guided laser diode with a double heterostructure. It is suitable as light sources for barcode readers, levelers, laser printers, and various other types of optical
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HL6712G
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diode hitachi
Abstract: No abstract text available
Text: HE8404SG GaAlAs Infrared Emitting Diode HITACHI Description The HE8404SG is a GaAlAs double heterojunction structure 820 nm band light emitting diode. suitable for use as the light source in a wide range of optical control and sensing equipment. Features •
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HE8404SG
8404SG
diode hitachi
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Abstract: No abstract text available
Text: HE8404SG GaAlAs Infrared Emitting Diode HITACHI Description The HE8404SG is a GaAlAs double heterojunction structure 820 nm band light emitting diode. It is suitable for use as the light source in a wide range of optical control and sensing equipment. Features
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HE8404SG
HE8404SG:
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Abstract: No abstract text available
Text: HE8811 GaAlAs Infrared Emitting Diode HITACHI Description The HE8811 is a GaAlAs infrared emitting diode with a double heterojunction structure. It is high brightness, high output power and fast response make it suitable as a light source in measuring instruments
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HE8811
HE8811
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Untitled
Abstract: No abstract text available
Text: HSB88WS Silicon Schottky Barrier Diode for Double Balanced Mixer HITACHI Features • • • • Small ÀVFand AC. Good for surface mounting on printed circuit board. Each diode can be biased. Wideband operation. Ordering Information Type No. M ark Package Code
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HSB88WS
ADE-208-026B
HSB88W
200pF,
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diode hitachi
Abstract: LS190N 1000-1 POWER MODULE
Text: DIODE MODULE Spec.No.SR2-SP-10001 R0 MDM800H45E2-H P1 Target Specification OUTLINE DRAWING FEATURES ∗ Low Reverse Recovery Loss diode module. ∗ Low noise recovery: Ultra soft fast recovery diode. ∗ High reverse recovery capability: Super HiRC Structure.
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SR2-SP-10001
MDM800H45E2-H
diode hitachi
LS190N
1000-1 POWER MODULE
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Untitled
Abstract: No abstract text available
Text: HL7853MG GaAIAs Laser Diode HITACHI Description The HL7853MG is a high power 0.78 iin band GaAIAs laser diode with a multi-quantum well (MQW structure. It is suitable as a light source for optical disk memories, and various other types of optical equipment.
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HL7853MG
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Abstract: No abstract text available
Text: HL6314MG AlGalnP Laser Diode HITACHI Description The HL6314MG is a 0.63 |_im band AlGalnP laser diode with a multi-quantum well MQW structure. It is suitable as a light source for laser poiters and optical equipment for amusement. Application • Laser pointer
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HL6314MG
635nm
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Abstract: No abstract text available
Text: DIODE MODULE Spec.No.SR2-SP-09001 R1 P1 MDM800H45E2 Target Specification OUTLINE DRAWING FEATURES Low VF diode module. Low noise recovery: Ultra soft fast recovery diode. High reverse recovery capability: Super HiRC Structure. High reliability, high durability diodes.
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SR2-SP-09001
MDM800H45E2
MDM800E45E2
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