BKC Semiconductors
Abstract: DSAIH0002537 007CT
Text: DO-35 Glass Package Silicon Switching Diode I I I N 4 I OU Applications L Used in general purpose applications.where a controlled forward characteristic and fast switching speed are important. D O -35 G lass Package nominal dimensions Six sigma quality Metallurgical^ bonded
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DO-35
LL-34/35
Mil-S-19500/231
4031-B
1N4150
DO-213AA
LL4150)
1N4150UR-1)
BKC Semiconductors
DSAIH0002537
007CT
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DPG30I300PA
Abstract: No abstract text available
Text: DPG 30 I 300 PA V RRM = I FAV = t rr = HiPerFRED High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 300 V 30 A 35 ns Part number DPG 30 I 300 PA 3 1 Backside: cathode Features / Advantages: Applications: Package: ● Planar passivated chips
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DPG30I300PA
O-220AC
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Untitled
Abstract: No abstract text available
Text: DPG 60 I 300HA advanced HiPerFRED² V RRM = I FAV = t rr = High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 300 V 60 A 35 ns Part number 3 DPG 60 I 300HA 1 Backside: cathode Features / Advantages: Applications: Package: ● Planar passivated chips
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300HA
O-247AD
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904nm laser diode
Abstract: No abstract text available
Text: LASER DIODE INC 15E D I 5302^35 OooG4b3 1 | K .A 5 £ j ^ > LD-60F SERIES LD-160F SERIES DIODE LASER DIODE, INC. T -m -o i SINGLE HETEROJUNCTION LASER DIODES WITH FIBER PIGTAILS FEATURES Uniform Intensity Source ► Up to 75 Watts of Peak O ptical Power O utput
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LD-60F
LD-160F
904nm
850nm
904nm laser diode
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DPG15I200
Abstract: DPG15I200PA
Text: DPG 15 I 200 PA V RRM = I FAV = t rr = HiPerFRED² High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 200 V 15 A 35 ns Part number DPG 15 I 200 PA 3 1 Backside: cathode Features / Advantages: Applications: Package: ● Planar passivated chips
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DPG15I200
Abstract: dpg15i200pa DPG 15 I 200 PA
Text: DPG 15 I 200 PA V RRM = I FAV = t rr = HiPerFRED² High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 200 V 15 A 35 ns Part number DPG 15 I 200 PA 3 1 Backside: cathode Features / Advantages: Applications: Package: ● Planar passivated chips
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DPG15I200
dpg15i200pa
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DPG30I300HA
Abstract: DPG30I300PA
Text: DPG 30 I 300 HA V RRM = I FAV = t rr = HiPerFRED² High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 300 V 30 A 35 ns Part number DPG 30 I 300 HA 3 1 Backside: cathode Features / Advantages: Applications: Package: ● Planar passivated chips
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dpg60i300
Abstract: DPG60IM300PC
Text: DPG 60 I 300 HA V RRM = I FAV = t rr = HiPerFRED² High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 300 V 60 A 35 ns Part number DPG 60 I 300 HA 3 1 Backside: cathode Features / Advantages: Applications: Package: ● Planar passivated chips
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dpg60i300
DPG60IM300PC
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DPG15I300PA
Abstract: No abstract text available
Text: DPG 15 I 300 PA V RRM = I FAV = t rr = HiPerFRED² High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 300 V 15 A 35 ns Part number DPG 15 I 300 PA 3 1 Backside: cathode Features / Advantages: Applications: Package: ● Planar passivated chips
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DPG15I300PA
Abstract: DPG 30 I 300 PA
Text: DPG 15 I 300 PA final V RRM = I FAV = t rr = HiPerFRED² High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 300 V 15 A 35 ns Part number DPG 15 I 300 PA 3 1 Backside: cathode Features / Advantages: Applications: Package: ● Planar passivated chips
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DPG30I300PA
Abstract: No abstract text available
Text: DPG 30 I 300 PA V RRM = I FAV = t rr = HiPerFRED² High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 300 V 30 A 35 ns Part number DPG 30 I 300 PA 3 1 Backside: cathode Features / Advantages: Applications: Package: ● Planar passivated chips
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DPG30I300PA
Abstract: No abstract text available
Text: DPG 30 I 300 HA advanced V RRM = I FAV = t rr = HiPerFRED² High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 300 V 30 A 35 ns Part number DPG 30 I 300 HA 3 1 Backside: cathode Features / Advantages: Applications: Package: ● Planar passivated chips
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DPG30I300PA
Abstract: No abstract text available
Text: DPG 30 I 300 PA V RRM = I FAV = t rr = HiPerFRED² High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 300 V 30 A 35 ns Part number DPG 30 I 300 PA 3 1 Backside: cathode Features / Advantages: Applications: Package: ● Planar passivated chips
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DPG30I300HA
DPG30I300PA
O-247
O-220AC
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a33 smd diode
Abstract: smd diode a33 BKC Semiconductors smd a33 BKC diode do35 DSAIH0002559 LL3595 Bkc SMD
Text: Low Leakage Diode 1N3595 Applications I DO-35 Glass Package Used in instrumentation applications, where low leakage and high voltage isolation are important. DO-35 Glass Package Features • • • • • • nominal dimensions Six sigma quality Metallurgical^ bonded
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1N3595
LL-34/35
Mil-S-19500/24"
DO-35
MIL-STD-750
1N3595-1
DO-213AA
LL3595)
a33 smd diode
smd diode a33
BKC Semiconductors
smd a33
BKC diode do35
DSAIH0002559
LL3595
Bkc SMD
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Untitled
Abstract: No abstract text available
Text: DFE 10 I 600PM advanced 600 V 10 A 35 ns V RRM = I FAV = t rr = FRED Fast Recovery Diode Low Loss and Soft Recovery Single Diode Part number Marking on product 3 1 Backside: isolated Features / Advantages: Applications: Planar passivated chips Llow leakage current
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600PM
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Abstract: No abstract text available
Text: DHG 5 I 600PM advanced 600 V 5A 35 ns V RRM = I FAV = t rr = Sonic-FRD High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode Part number 3 1 Backside: isolated Features / Advantages: Package: Applications: Planar passivated chips Very low leakage current
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600PM
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Untitled
Abstract: No abstract text available
Text: Silicon Switching Diode i 1N4153 • fe0-35 Glass Package Applications Used in general purpose applications,where a low current controlled forward characteristic and fast switching speed are important. Features • • • • • • DO-35 Glass Package nominal dimensions
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1N4153
fe0-35
DO-35
LL-34/35
Mil-S-19500/437
Surg100
1N4153
DO-213AA
LL4153)
1N4153UR-1HR,
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Untitled
Abstract: No abstract text available
Text: SD101A - SD101C SCHOTTKY BARRIER DIODE Features • • • • Low Forward Voltage Drop Guard Ring Construction for Transient Protection Low Reverse Recovery Time Low Reverse Capacitance I T D Mechanical Data_ • • • • • DO-35 Case: DO-35, Plastic
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SD101A
SD101C
DO-35
DO-35,
MIL-STD-202,
SD101A
SD101B
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Untitled
Abstract: No abstract text available
Text: □IXYS Power Schottky Rectifier DSSK 28 U = 2 x 14 a VRRM = 35 - 45 V Preliminary data V RSM V RRM V I Type ►I I H TO-220 A B V 35 45 35 45 Symbol DSSK 28-0035A DSSK 28-0045A Test Conditions A Maximum Ratings per diode ^FAV Tc = 156°C; rectangular, d = 0.5
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O-220
8-0035A
8-0045A
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DPG10I200PA
Abstract: No abstract text available
Text: DPG 10 I 200 PM V RRM = I FAV = t rr = HiPerFRED² High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 200 V 10 A 35 ns Part number 3 1 Backside: isolated Features / Advantages: Package: Applications: Planar passivated chips Very low leakage current
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Untitled
Abstract: No abstract text available
Text: DPG 15 I 300 PA V RRM = I FAV = t rr = HiPerFRED² High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 300 V 15 A 35 ns Part number 3 1 Backside: cathode Features / Advantages: Package: Applications: Planar passivated chips Very low leakage current
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Untitled
Abstract: No abstract text available
Text: DPG 15 I 200 PA V RRM = I FAV = t rr = HiPerFRED² High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 200 V 15 A 35 ns Part number 3 1 Backside: cathode Features / Advantages: Package: Applications: Planar passivated chips Very low leakage current
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DPG10I200PA
Abstract: No abstract text available
Text: DPG 10 I 200 PA V RRM = I FAV = t rr = HiPerFRED² High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 200 V 10 A 35 ns Part number 3 1 Backside: cathode Features / Advantages: Package: Applications: Planar passivated chips Very low leakage current
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Untitled
Abstract: No abstract text available
Text: DPG 10 I 300 PA V RRM = I FAV = t rr = HiPerFRED² High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 300 V 10 A 35 ns Part number 3 1 Backside: cathode Features / Advantages: Package: Applications: Planar passivated chips Very low leakage current
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