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    DIODE IN5 Search Results

    DIODE IN5 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE IN5 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    DA573S6

    Abstract: diode marking 4c a1383 A1383 transistor Marking 4c
    Text: DA573S6 Ordering number : ENA1383 SANYO Semiconductors DATA SHEET DA573S6 Silicon Diffused Junction Type Diode ESD Protection Diode Features • • • Contact discharge 30kV guarantee IEC61000-4-2 . 6-pin package containing 5 devices. Halogen free compliance.


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    PDF DA573S6 ENA1383 IEC61000-4-2) 150pF, A1383-4/4 DA573S6 diode marking 4c a1383 A1383 transistor Marking 4c

    gold metal detectors

    Abstract: IN5711 in5711 equivalent diode ring mixer PN Junction Diode oscillator Metal Detector doppler radar p-n junction diode digital metal detector Silicon Point Contact Mixer Diodes
    Text: Schottky Barrier Diodes Characteristics A Schottky barrier diode contains a metal-semiconductor barrier formed by deposition of a metal layer on a semiconductor. The resulting non-linear diode is similar to point contact diodes and p-n junction diodes. The


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    PDF AN988, 26/IB gold metal detectors IN5711 in5711 equivalent diode ring mixer PN Junction Diode oscillator Metal Detector doppler radar p-n junction diode digital metal detector Silicon Point Contact Mixer Diodes

    IN5225

    Abstract: 1N4154 marking DO35 DO-35 BLUE CATHODE
    Text: 1N4154 DISCRETE POWER AND SIGNAL TECHNOLOGIES General Description: Features: The high breakdown voltage, fast switching speed and high forward conductance of this diode packaged in a DO-35 miniature Glass Axial leaded package makes it desirable also as a general purpose diode.


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    PDF 1N4154 DO-35 IN5225 1N4154 marking DO35 DO-35 BLUE CATHODE

    1S923

    Abstract: IN5225 175 WIV High Switching
    Text: 1S923 1S923 General Description: The high breakdown voltage, fast switching speed and high forward conductance of this diode packaged in a DO-35 miniature Glass Axial leaded package makes it desirable also as a general purpose diode. 0.500 Minimum 12.70 Typ 1.000


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    PDF 1S923 DO-35 1S923 IN5225 175 WIV High Switching

    IN5225

    Abstract: 1N486B DO-35 PACKAGE liner marking code
    Text: 1N486B General Description: A General Purpose, Low Leakage Diode in the DO-35 package. These diodes couple very low reverse leakage current with high forward conduction and high reverse blocking voltage. General Purpose Low Leakage Diode This product is light sensitive, any damage to the body coating


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    PDF 1N486B DO-35 IN5225 1N486B DO-35 PACKAGE liner marking code

    IN5221

    Abstract: No abstract text available
    Text: Zener Diode Chip Series CD5221B thru CD5272B Features • All junctions completely protected with silicon dioxide • Electrically equvalent to IN5221B thru IN5272B • 0.5 Watt capability with proper heat sinking • Compatible with all wire bonding and die attach


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    PDF CD5221B CD5272B IN5221B IN5272B 200mA: 20entative IN5221

    CD5226B

    Abstract: IN5221B IN5221 IN5272B CD522
    Text: Zener Diode Chip Series CD5221B thru CD5272B Features • All junctions completely protected with silicon dioxide • Electrically equvalent to IN5221B thru IN5272B • 0.5 Watt capability with proper heat sinking • Compatible with all wire bonding and die attach


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    PDF CD5221B CD5272B IN5221B IN5272B 200mA: CD5226B IN5221 CD522

    INS333-IN5388

    Abstract: IN5333 Zener Diode colour diode lt 238 1N53588 1N53468 1N533 1N53518 1N53838 1N5333B
    Text: SEtllTRON INDUSTRIES LTD 43E » • 613760^ 0000161 1 « S L C B IN5333-IN5388 series High Power Zener Diode Voltage Range 3V3 to 200 Volts 5.0 Watt Steady State FEATURES ■ High power regulator diode ■ High surge capabilities ■ 100% Tested ■ -65°C to +200°C


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    PDF INS333-IN5388 1N5375B 1N5376B 1N5377B 1N5378B 1N5379B 1N5380B 1NS381B 1N5382B 1NS383B IN5333 Zener Diode colour diode lt 238 1N53588 1N53468 1N533 1N53518 1N53838 1N5333B

    1M5378B

    Abstract: No abstract text available
    Text: SEtllTRON INDUSTRIES LTD 43E » • 613760^ 0000161 1 « S L C B IN5333-IN5388 series High Power Zener Diode Voltage Range 3V3 to 200 Volts 5.0 Watt Steady State FEATURES ■ High power regulator diode ■ High surge capabilities ■ 100% Tested ■ -65°C to +200°C


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    PDF IN5333-IN5388 DO-35 DO-41 DO-15 DO-201AD 1M5378B

    MT1115

    Abstract: 2N3303 FPT100 phototransistor UA739 equivalent transistor bc 554 pnp mt1039 ft2974 fairchild 2N3565 FD6666 diode transistor npn Epitaxial Silicon SST 117
    Text: Fairchild Semiconductor T ransistor and Diode Data Catalog 1970 The Fairchild Semiconductor Transistor anc Diode Data Catalog is an all-inclusive volume of product information covering diodes anc transistors. Selection guides and data sheets fot each category of products assist you ir


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    PDF 108th MT1115 2N3303 FPT100 phototransistor UA739 equivalent transistor bc 554 pnp mt1039 ft2974 fairchild 2N3565 FD6666 diode transistor npn Epitaxial Silicon SST 117

    Untitled

    Abstract: No abstract text available
    Text: ASI3486 ZERO BIAS SCHOTTKY DIODE DESCRIPTION: The AS I3486 is a Silicon Schottky Barrier Diode Designed for High Sensitivity Zero Bias Detector Applications up to 10 GHz. FEATURES INCLUDE: • Replacement for HP H S C H 3486 • -56 dBm TssTypical @ 10 G Hz


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    PDF ASI3486 I3486 AS13486

    IN5711

    Abstract: Silicon Point Contact Mixer Diodes Microwave zero bias detector diodes
    Text: W O ñ H EW LETT' 1"KM PACKARD Schottky Barrier Diodes C haracteristics A Schottky barrier diode contains a metal-semiconductor barrier formed by deposition of a metal layer on a semiconductor. The resulting non-linear diode is similar to point contact diodes


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    PDF AN988, 26/Th IN5711 Silicon Point Contact Mixer Diodes Microwave zero bias detector diodes

    ir10 diode

    Abstract: LM5142 lm568 diode IR10 1M5603 IN5139 MV140 diode 718
    Text: 1M-9/93 IDXDSD Series 1M1401 - 1M1412 1M6520 - 1M6525 1M5461A-1M5476A SURFACE MOUNT TUNING DIODES I electronics,. Many popular axial leaded glass packaged tuning diode types are now available in the MSI 1M Case for surface mount assemblies. The tuning diode chips, mounted on


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    PDF 1M-9/93 1M1401 1M1412 1M6520 1M6525 1M5461A-1M5476A or1M5143 1X5144 1M5145 1M5146 ir10 diode LM5142 lm568 diode IR10 1M5603 IN5139 MV140 diode 718

    1N1743

    Abstract: IN5234 IN5008 1N4202 zener diode 1N PH 48 diode 1n1418 1NS232 zener diode c51 ph 1n587 1N4465
    Text: ZENER DIODE/RECTIFIER CROSS REFERENCE CHART Containing all JE D E C registered Zener diodes. This popular reference chart contains highlight information on all JE D E C registered Zener diode and rectifier types as well as Microsemi types. The following Codes are used:


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    PDF 1N225 1N2260) 1N227 1N228 1N229 1N230O) 1N231d) 1N232 BZX83 BZX97 1N1743 IN5234 IN5008 1N4202 zener diode 1N PH 48 diode 1n1418 1NS232 zener diode c51 ph 1n587 1N4465

    IN5908

    Abstract: IN5907 IN5908 diodes zener diode Izsm IN5908 ON IIN5908 transient absorption zener D027A IIN5907 ZENER DIODE 8.5 V 5W
    Text: POWERZORB IN5907 IN5908 1.5 KW Transient Absorption Zerier Diode Transient Absorption zener diodes specifically designed to protect in tegrated circuits which require 5.0 V or lower power supplies. IN5907 IN5908 Psurge- - 1.5KW 1.5KW


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    PDF IN5907 IN5908 D027A IN5908 IN5908 diodes zener diode Izsm IN5908 ON IIN5908 transient absorption zener D027A IIN5907 ZENER DIODE 8.5 V 5W

    OL461N-50

    Abstract: highpower laserdiode application BP424 laserdiode application 1480 nm diode laser OKI Electronic Components cm PF-50
    Text: OKI electronic components O L46 IN-50 1.48 |im High-Power Laser-Diode DIP Module GENERAL DESCRIPTION The OL461N-5CI is a 1.48 |im, extremely high power laser-diode DIP module with a smgle-mode fiber pigtail. The laser chip achieves a single-mode fiber output of over 50 mW. The module is suitable


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    PDF QL461N-50 OL461N-50 14-pin 002247D OL461N-5Q 00ES472 OL461N-50 P424D highpower laserdiode application BP424 laserdiode application 1480 nm diode laser OKI Electronic Components cm PF-50

    in5297

    Abstract: IN5314 SILICON DICE motorola
    Text: MOTOROLA SC ~34 {DIODES/OPTOï 6367255 MOTOROLA SC DËlfc.Bb7H55 OQBñiaT ñ D IO D E S /O P TO 34C 38129 D 7Z/)~0S SILICON ZENER DIODE DICE (continued) 1C5297 DIE NO. — SERIES LINE SOURCE — DZD510 CURRENT REGULATOR DIODE This die provides performance equal to or better than that


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    PDF Bb7H55 DZD510 1C5297 IN5297 IN5314 1C5297 1C5314 IN5314 SILICON DICE motorola

    Zener Diode 4148

    Abstract: zener T 4148 T 4148 zener ZENER diode t 4148 ZENER 4148 1N914 SOT-23 v 4148 zener diode diode t 4148 zener diode 4148 code diode 4148 sot-23
    Text: 02 &J 02E 00432 1989963 CENTRAL SEMICONDUCTOR 0Q00435 pe| 7 | T -2 3 ~ 0 $ - SMD WÊÈÊSSÊÊiÊÊÈâm eentsvsi ssmieonsBwefior sepp. Centres! gs^ ieoiï^ yetai”e@rp. Sx •‘¿¿ri6 SURFACE MOUNTED DEVICES DIODE: SOT-23, SOT-143, S0D-80 ZENER DIODE: SOT-23, S0D-80


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    PDF OT-23, OT-143, S0D-80 OT-143 OT-89 OT-23 BAS28 Zener Diode 4148 zener T 4148 T 4148 zener ZENER diode t 4148 ZENER 4148 1N914 SOT-23 v 4148 zener diode diode t 4148 zener diode 4148 code diode 4148 sot-23

    74LS115

    Abstract: 74LS273 74LS189 equivalent 74LS00 QUAD 2-INPUT NAND GATE 74LS265 fan-in and fan out of 7486 74LS93A 74LS181 74LS247 replacement MR 31 relay
    Text: F A IR C H IL D LOW POWER S C H O T T K Y D A TA BOOK ERRATA SHEET 1977 Device Page Item Schematic 2-5 Figure 2-6. Blocking diode in upper right is reversed. Also, diode con­ necting first darlington emitter to output should have series resistor. LS33 5-25


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    IN5844 diode

    Abstract: IN5844 IN751 Diode "IN5844" IN4742 diode in5844 IN4744 IN4732 IN4748 IN4118
    Text: jemitronicf discrete devices SEMICONDUCTORS S em itronics Corp. ZENER DIODE CROSS REFERENCE GUIDE BY VOLTAGE vz 500mW 4Q0mW 400mW 500mW 250mW 250/ 400mW IN4678 IN4679 IN4680 IN4614 IN4615 IN4616 IN5985 IN4681 IN4617 IN5966 IN4682 IN4683 IN4616 IN4619 500mW


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    PDF IN5221 IN5222 IN5223 IN5224 IN5225 IN5226 IN5227 IN5228 IN5229 IN5230 IN5844 diode IN5844 IN751 Diode "IN5844" IN4742 diode in5844 IN4744 IN4732 IN4748 IN4118

    ANA 618

    Abstract: IC ANA 618 IN4453 Lem LT 300 - t
    Text: IN4156, IN4157, IN4453, IN4829, IN4830, IN5179 STABISTORS Mierosemi Corp. ' The diode experts SANTA ANA , CA Also, Tight Tolerance SCOTTSDALE, AZ MPD100 thru MPD400A or MZ2360 and MZ2361 For more inform ation call: 602 941-6300 PACKAGE DIMENSIONS APPLICATION


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    PDF IN4156, IN4157, IN4453, IN4829, IN4830, IN5179 MPD100 MPD400A MZ2360 MZ2361 ANA 618 IC ANA 618 IN4453 Lem LT 300 - t

    IN5555

    Abstract: in5556 transient absorption zener IN5557 IN5558 zener diode Izsm IIN5555 ZENER DIODE 437 IN555
    Text: POWERZORB IN5555 -IIN5558 1.5 KW Transient Absorption Zener Diode A range of Transient Absorption zener diodes specifically designed to meet high reliability requirements in the aviation industry. 1.5KW; 1mS expo surge _ _ 1 W max cont 3 0 .3 -175V


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    PDF IN5555 -IIN5558 10-12S 127mm -IN5558 in5556 transient absorption zener IN5557 IN5558 zener diode Izsm IIN5555 ZENER DIODE 437 IN555

    TAG 9135

    Abstract: tag z 409 rohm 4.7V zener diode MARKING CODE t05 SOT-23 SMD CODE L01 rsz rohm marking RSZ diode rsz RSZ5000 ROHM marking 185
    Text: TfliSÛR'H O O O ö T O b ROHffl PRELIMINARY RHU RSZ5000 SERIES ZENER DIODE, SURFACE MOUNT: APPLICATION: EDS • SOT-23 FEATURES: Voltage Regulation • Small size for Surface Mount Applications ■ Compatible with JEOEC IN5000 Series ■ Silicon planar construction


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    PDF RSZ5000 OT-23 IN5000 OT-23) RSZ5262B RSZ5263B RSZ5264B RSZ5265B RSZ5266B RSZ5267B TAG 9135 tag z 409 rohm 4.7V zener diode MARKING CODE t05 SOT-23 SMD CODE L01 rsz rohm marking RSZ diode rsz ROHM marking 185

    diode t88

    Abstract: zener diode 4.7V 1n4000 DIODE t88 diode T-72 diode 1n5000 5261B 5230b 1N4000 1N5000 SERIES
    Text: 7 0 2 0 ^ DOOfifi^O Olô •RHil 1N5000 SERIES ZEN ER DIODE GLASS SEALED APPLICATION: FEATURES: - JE D E C IN5000 Series - Silicon planar construction ■DO-35 Package - Available in 8 mm plastic carrier tape - Voltage range: 2.4 to 91V Voltage Regulation


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    PDF 1N5000 IN5000 DO-35 DO-35 5261B 1N5262B 5262B 1N5263B 5263B 1N5264B diode t88 zener diode 4.7V 1n4000 DIODE t88 diode T-72 diode 5261B 5230b 1N4000 1N5000 SERIES