DIODE ITT 310
Abstract: CM75E3Y-12E CM75E3Y-12 00D7243 75e3y
Text: CM75E3Y-12E Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Chopper IGBTMOD E-Series Module 75 Amperes/600 Volts Description: CM75E3Y-12E Chopper IGBTMOD™ E-Series Module 75 Amperes/600 Volts Powerex Chopper IG B T M O D ™
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CM75E3Y-12E
Amperes/600
CM75E3Y-12E
000754b
DIODE ITT 310
CM75E3Y-12
00D7243
75e3y
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DIODE ITT 310
Abstract: No abstract text available
Text: TSI Terminal set interface protection and diode bridge Features • Stand-off voltage from 62 V to 265 V ■ Peak pulse current: 30 A 10/1000 µs ■ Maximum DC current: IF = 0.2 A ■ Holding current: 150 mA SO-8 Benefits ■ Trisil technology is not subject to ageing and
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ECG3100
Abstract: lc 3101 led ECG3102 ECG3103 ECG3105 transistor p58 ECG3101 ECG3104 transistor p26 ecg 100 transistor
Text: Infrared Detector D io d e s ECG Type Description ECG3033 Infrared PIN Detector Diode Reverse Voltage V r IV Max. Dark Current ID »A) Min Light Current ILI/jA) Power Dissipation PD (mW) Rise Time tr (nS) Typ Detection Angle Typ Detection Wavelength (nm)
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ECG3033
ECG3033
ECG3100
ECG3101
lc 3101 led
ECG3102
ECG3103
ECG3105
transistor p58
ECG3104
transistor p26
ecg 100 transistor
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Untitled
Abstract: No abstract text available
Text: Preliminary SMBL1G75US60 IGBT MODULE FEATURES • High Speed Switching • Low Conduction Loss : VCE sat = 2.1 V (typ) • Fast & Soft Anti-Parallel FWD • Short circuit rated : Min 10uS at Tc=100°C APPLICATIONS • Boost(Step Up) Converter • Dynamic Braking for Motor Drive
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SMBL1G75US60
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Untitled
Abstract: No abstract text available
Text: Preliminary SMBH1G75US60 IGBT MODULE FEATURES • High Speed Switching • Low Conduction Loss : VCE sat = 2.1 V (typ) • Fast & Soft Anti-Parallel FWD • Short circuit rated : Min 10uS at Tc=100°C APPLICATIONS • Buck(Step Down) Converter ABSOLUTE MAXIMUM RATINGS
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SMBH1G75US60
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SK40100C
Abstract: SK4040C SK4050C SK4060C SK4070C IC NE 555
Text: SflE » DIOTEC ELECTRONICS CORP DIOTEC ELECTRONICS CORP. 2 0 4 1 1 0 7 0 0 0 0 0 3 3 774 I • »IX Data Sheet No.: SBDT-4000-A 18020 Hobart Blvd., Unit B Gardena, CA 90248 D l C Tel.: 310 767-1052 Fax: (310) 767-7958 TQ-247 fTO-3Pi 40 AMP SCHOTTKY BARRIER RECTIFIERS
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SBDT-4000-A
TQ-247
UL94V-0
MIL-STD-202E,
SK40100C
SK4040C
SK4050C
SK4060C
SK4070C
IC NE 555
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Untitled
Abstract: No abstract text available
Text: Preliminary SM2G75US60 IGBT MODULE FEATURES • High Speed Switching • Low Conduction Loss : VCE sat = 2.1 V (typ) • Fast & Soft Anti-Parallel FWD • Short circuit rated : Min 10uS at Tc=100°C APPLICATIONS • • • • • General Purpose Inverters
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SM2G75US60
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Untitled
Abstract: No abstract text available
Text: BS809 N-Channei Enhancement Mode DMOS Transistor Features - high input impedance - low gate threshold voltage - low drain-source ON resistance - high-speed switching - no minority carrier storage time - CMOS logic compatible input - no thermal runaway - no secondary breakdown
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BS809
OT-23
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V30400
Abstract: 300V dc dc STEP DOWN SMBH1G75US60 igbt buck converter
Text: Prelim inary SMBH1G75US60 IG B T M O D U L E FE A TU R ES • High Speed Switching • Low Conduction Loss : V CE sat = 2.1 V (typ) • Fast & Soft Anti-Parallel FWD • Short circuit rated : Min 10uS at Tc=100°C A P P LIC A TIO N S Package code : 7-PM-AA
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SMBH1G75US60
V30400
300V dc dc STEP DOWN
SMBH1G75US60
igbt buck converter
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300V dc dc boost converter
Abstract: SMBL1G75US60 300V dc to dc boost converter IGBT gate drive for a boost converter
Text: Prelim inary SMBL1G75US60 IG B T M O D U L E FE A TU R ES • High Speed Switching • Low Conduction Loss : V CE sat = 2.1 V (typ) • Fast & Soft Anti-Parallel FWD • Short circuit rated : Min 10uS at Tc=100°C A P P LIC A TIO N S Package code : 7-PM-AA
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SMBL1G75US60
300V dc dc boost converter
SMBL1G75US60
300V dc to dc boost converter
IGBT gate drive for a boost converter
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"welding circuit " IGBT
Abstract: dc welding machine circuit diagram SM2G75US60 dc servo igbt diagram V30400
Text: Prelim inary SM 2G75US60 IG B T M O D U L E FE A TU R ES • High Speed Switching • Low Conduction Loss : V CE sat = 2.1 V (typ) • Fast & Soft Anti-Parallel FWD • Short circuit rated : Min 10uS at Tc=100°C A P P LIC A TIO N S • • • • • Package code : 7-PM-AA
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SM2G75US60
"welding circuit " IGBT
dc welding machine circuit diagram
SM2G75US60
dc servo igbt diagram
V30400
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KT853
Abstract: KT850 KT853A LTR-305D H0A0872-n55 H0A1405-1 h0a2001 MOC70T3 HOA708-1 smd diode 825B
Text: Cross Reference Competition Honeywell P/N P/N 100 H 0A0871-N55 50B2-4204 CALL PHOTODIODES, T 0 1 8 T A LL PIN 101 HOA1872-12 BC TR AN S A S S Y . PTX 5082-4205 CALL PHOTODIODES. P P PIN 10501 H 0A 1872-1 BC TRAN S A S S Y , PTX 5082-4207 CALL PHOTODIODES. T 0 1 8 T A LL PIN
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1N5722
1N5723
1N5724
1N5725
1N6264
1N6265
1N6266
2004-90xx
3N24x
24xTX
KT853
KT850
KT853A
LTR-305D
H0A0872-n55
H0A1405-1
h0a2001
MOC70T3
HOA708-1
smd diode 825B
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diode lt 250
Abstract: 75150PC
Text: Preliminary SMBL1G75US60 IGBT MODULE FEATURES • High Speed Switching • Low Conduction Loss : VCE sat = 2.1 V (typ) • Fast & Soft Anti-Parallel FWD • Short circuit rated : Min 10uS at Tc=100°C APPLICATIONS Package code : 7-PM-AA • Boost(Step Up) Converter
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SMBL1G75US60
diode lt 250
75150PC
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75150pc
Abstract: No abstract text available
Text: Preliminary SM2G75US60 IGBT MODULE FEATURES • High Speed Switching • Low Conduction Loss : VCE sat = 2.1 V (typ) • Fast & Soft Anti-Parallel FWD • Short circuit rated : Min 10uS at Tc=100°C APPLICATIONS • • • • • Package code : 7-PM-AA
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SM2G75US60
75150pc
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BU4508DX equivalent
Abstract: BUT11APX equivalent S0806MH P0201MA TO92 BT136 application note diode cross reference BYW96E ct 2A05 diode BU2508Dx equivalent ST2001HI equivalent BU2508DF equivalent
Text: 6535 07-03-2001 06:32 Pagina 1 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140, Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 1 60 101 1248, Fax. +43 1 60 101 1210
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BT148-600R
BT148-400R
BU4508DX equivalent
BUT11APX equivalent
S0806MH
P0201MA TO92
BT136 application note
diode cross reference BYW96E
ct 2A05 diode
BU2508Dx equivalent
ST2001HI equivalent
BU2508DF equivalent
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BUT11APX equivalent
Abstract: BU4508DX equivalent 2SD1876 2Sd1651 equivalent BYS21-45 smd zener diode color band 2SD1878 data sheet 2SC5296 equivalent BT151-600R BUK98150 spice
Text: Philips Semiconductors – a worldwide company Argentina: see South America Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140, Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 1 60 101 1248, Fax. +43 1 60 101 1210
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BT148-600R
BT148-400R
BUT11APX equivalent
BU4508DX equivalent
2SD1876
2Sd1651 equivalent
BYS21-45
smd zener diode color band
2SD1878 data sheet
2SC5296 equivalent
BT151-600R
BUK98150 spice
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MSM5298
Abstract: LC758
Text: SANYO SEMICONDUCTOR CORP C o n tin u ed fro m p reced ing p a g e . 32E D • 7cH7D7b 00075^7 2 ■ T~£$~/3 LCD CONTROLLERS, DRIVERS raonolitM cintegratedcircuit \ 1, * Ty p e ■ ; N u m b er Ï] « LA 5 6 4 0 N -Vi & V ’ Packagi P in s & ‘ ’ Package -
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3026B.
3026B
3044B
LB8555S
LB8555M
3001B
3016B
3032B
3006B
MSM5298
LC758
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TR20X3
Abstract: DFI01 OR02D
Text: December 1989 FGA S eries A S PE C T- ECL G ate A rrays General Description The FGA Series is a new generation of ECL gate arrays based on National’s ASPECT process. These advanced ECL gate arrays, ranging from 200 to over 30,000 equiva lent gates, offer typical internal propagation delays of
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em 518 diode
Abstract: No abstract text available
Text: MITSUBISHI TRANSISTOR MODULES | QM50CY-H | MEDIUM POWER SWITCHING USE \ INSULATED TYPE ? QM50CY-H • lc Collector c u rre n t. • Vcex C ollector-em itter v o lta g e . DC current g a in . • hFE 50A ! 600V I 75 I
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QM50CY-H
E80276
E80271
em 518 diode
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SSH22N50
Abstract: SSH22N50A
Text: SSH22N50A Advanced Power MOSFET FEATURES • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 HA Max. @ VDS = 500V ■ Lower R DS(ON) : 0.197 n (Typ.)
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SSH22N50A
b4142
O-220-F-4L
DD3b33E
003b333
SSH22N50
SSH22N50A
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Untitled
Abstract: No abstract text available
Text: A dvanced P ow er Te c h n o l o g y O D APT6040BN APT5540BN APT6045BN APT5545BN O s POWER MOS IV' 600V 550V 600V 550V 18.0A 18.0A 17.0A 17.0A 0.40Q 0.40Í2 0.45ÍÍ 0.45Q N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER M0SFETS MAXIMUM RATINGS All Ratings: Tc = 25°C unless otherwise specified.
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APT6040BN
APT5540BN
APT6045BN
APT5545BN
5540BN
6040BN
5545BN
6045BN
O-247AD
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agbf
Abstract: LT 5351
Text: Revised Date Classi fication tnd. Content enactment Ft# Electric Ca,LtcL Records Applied date Issued date Brawn Checked Approved - MS5F3241 # »4-004-06 3 IM B I 4 O O M B - I 3 0 t. Outline Drawinn Unit : ma 2. Equivalent circuit -OB c o- o Ô G *NUJ (Over Carrent Liai ting Circuit
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MS5F3241
H04-004-03
agbf
LT 5351
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Untitled
Abstract: No abstract text available
Text: bitemational [g»lRectifier HEXFET Power MOSFET • • • • • • • PD -9.1225 IRFD310 Dynamic dv/dt Rating Repetitive Avalanche Rated For Automatic Insertion End Stackable Fast Switching Ease of paralleling Simple Drive Requirements V d s s = 400V
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IRFD310
0G224bl
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Untitled
Abstract: No abstract text available
Text: bitemational ^R ectifier Data Sheet No. PD-6.077 IRQ3H42Q HIGH VOLTAGE HALF-BRIDGE Features • ■ ■ ■ ■ ■ ■ ■ ■ ■ Product Summary Output Power MOSFETs in half-bridge configuration 500V Rated Breakdown Voltage High side gate drive designed for bootstrap operation
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IRQ3H42Q
IR03H420
5M-1982.
4A55452
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