UM9442
Abstract: UMM5050 MSC 9415 pin diodes radiation detector MSC 501 302 diode PIN DIODE DRIVER CIRCUITS "Microwave Diode" UM9441 Microwave PIN diode hf power combiner broadband transformers
Text: Microsemi-Watertown THE PIN DIODE CIRCUIT DESIGNERS’ HANDBOOK The PIN Diode Circuit Designers’ Handbook was written for the Microwave and RF Design Engineer. Microsemi Corp. has radically changed the presentation of this PIN diode applications engineering material to increase its usefulness to Microwave and RF Circuit Designers. A major part of
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MPD-101A
UM9442
UMM5050
MSC 9415
pin diodes radiation detector
MSC 501 302 diode
PIN DIODE DRIVER CIRCUITS
"Microwave Diode"
UM9441
Microwave PIN diode
hf power combiner broadband transformers
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CM05B
Abstract: D65084 1N78 1N5764 1N5764MR C65101
Text: MIL-s-19500&l EL 19November 1971 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE,GALLIUM ARSENIDE, MIXER TYPE1N5764, and 1N5764MR 1N5764M , . 1. ScOPE 1.1Scope.Thisspecification covers thedetailrequirements forGal!iumArsenide, Luw Barrier, HighSee:itivity,
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L-s-19500
19November
TYPE1N5764,
1N5764M
1N5764MR
DMR1426
JAN66WHICH
CM05B
D65084
1N78
1N5764
1N5764MR
C65101
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MOSFET 4407
Abstract: ir2110 class d amp IRFP450 inverter irfp460 ir2110 Class d IR2110 inverter ic 3524 application ir2110 with calculations for inverter BJT with V-I characteristics INT-983 Inverter IR2110
Text: Application Note AN-990 Application Characterization of IGBTs Table of Contents Page I. Gate Drive Requirements . 1 I. A Impact of the impedance of the gate drive circuit on switching losses. 1
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AN-990
MOSFET 4407
ir2110 class d amp
IRFP450 inverter
irfp460 ir2110
Class d IR2110
inverter ic 3524 application
ir2110 with calculations for inverter
BJT with V-I characteristics
INT-983
Inverter IR2110
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IRF9460
Abstract: ir2110 spice IR2110 IGBT DRIVER irfp460 ir2110 INT-983 IRGP50S ir2110 with calculations for 3 phase inverter IR2121 irfp450 mosfet IRCPC50F
Text: Application Note AN-990 Application Characterization of IGBTs Table of Contents Page I. Gate Drive Requirements . 1 I. A Impact of the impedance of the gate drive circuit on switching losses. 1
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AN-990
IRF9460
ir2110 spice
IR2110 IGBT DRIVER
irfp460 ir2110
INT-983
IRGP50S
ir2110 with calculations for 3 phase inverter
IR2121
irfp450 mosfet
IRCPC50F
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LM317 spice
Abstract: LM317 spice model Parallel Application LM317 LM317BT LM317MOT MC33269 spice luxeon lumiled IC1 LM317 simulation model electrolytic capacitor JSU23X106AQC
Text: AND8146/D High Current LED − Capacitive Drop Drive Application Note Prepared by: Carl Walding ON Semiconductor http://onsemi.com APPLICATION NOTE Incandescent lamps, including the tungsten−halogen type, have efficiencies of only about 4 to 10% for visible light.
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AND8146/D
LM317 spice
LM317 spice model
Parallel Application LM317
LM317BT
LM317MOT
MC33269 spice
luxeon lumiled
IC1 LM317
simulation model electrolytic capacitor
JSU23X106AQC
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IRF9460
Abstract: irfp460 ir2110 mosfet IRF450 IR2110 dc motor ir2110 class d amp ir2110 with calculations for 3 phase inverter ir2110 with calculations for inverter irfp460 inverter IR2110 buck Class d IR2110
Text: Index INT990 Application Characterization of IGBTs HEXFRED is a trademark of International Rectifier Topics Covered: Gate drive for IGBTs Safe Operating Area Conduction losses Statistical models Switching losses Device selection and optimization Spreadsheets to calculate power losses and junction temperature
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INT990
INT-983,
IRF9460
irfp460 ir2110
mosfet IRF450
IR2110 dc motor
ir2110 class d amp
ir2110 with calculations for 3 phase inverter
ir2110 with calculations for inverter
irfp460 inverter
IR2110 buck
Class d IR2110
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MOSFET 4407
Abstract: IRF9460 ir2110 class d amp irfp460 ir2110 AN-941 IRFP450 inverter irfp450 mosfet full bridge ir2110 with calculations for inverter full bridge ir2110 4407 mosfet
Text: INT990 Application Characterization of IGBTs HEXFRED is a trademark of International Rectifier Topics Covered: Gate drive for IGBTs Safe Operating Area Conduction losses Statistical models Switching losses Device selection and optimization Spreadsheets to calculate power losses and junction temperature
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INT990
INT-983,
MOSFET 4407
IRF9460
ir2110 class d amp
irfp460 ir2110
AN-941
IRFP450 inverter
irfp450 mosfet full bridge
ir2110 with calculations for inverter
full bridge ir2110
4407 mosfet
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LM317BT
Abstract: JSU23X106AQC WIRE JUMPER RSF200JB-2R2 jumper diode substitution luxeon star ZD4 Panasonic 1N4004 1N5917B
Text: Bill of Materials for LM317HWEVB Demonstration Board h 3/4/2004 Designator Quantity Conn1 C1 C2 C3 C4 D1 D2 D3 D4 F1 IC1 IC1 JMP1 R1 R2 R3 TP1, TP2 TP3 TP4 LED1 LED2 LED3 ZD1 ZD3, ZD4 ZD5 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 2 1 1 1 1 1 1 2 1 Description Value
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LM317HWEVB
JSU23X106AQC
EEU-FC1E102
1N4004
LM317BT
566010B02800
RSF200JB-2R2
RSF100JB-3R6
1N5934B
1N5917B
LM317BT
JSU23X106AQC
WIRE JUMPER
RSF200JB-2R2
jumper
diode substitution
luxeon star
ZD4 Panasonic
1N4004
1N5917B
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FP103
Abstract: No abstract text available
Text: Ordering number: EN 3962 No.3962 If _ FP103 PN P E pitaxial P lan ar Silicon T ransistor/ Composite Schottky B arrier Diode S A \Y O , DC/DC Converter Applications F e a tu re s - Composite type with a PNP transistor and a Schottky b a rrier diode contained in one packge,
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FP103
FP103
2SB1121
SB07-03C,
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Untitled
Abstract: No abstract text available
Text: ATTM. MEDIUM VOLTAGE, FAST RECOVERY CHIP NUMBER -JSutran Devices. Inc PN EPITAXIAL FAST RECOVERY PLANAR POWER DIODE CONTACT METALLIZATION Anode: > 50,000 A Aluminum Cathode: Gold (Polished silicon or "Chrome Nickel Silver" also available Also available on:
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305mm)
C-126
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CMP-01
Abstract: cmp01c CMP01CP CMP01CJ
Text: ANALOG DEVICES INC S 1E ANALOG DEVICES ]> üôlbâGO GOBfci'm 3SE -7 3 -5 3 . IANA Fast Precision Comparator FEATURES GENERAL DESCRIPTION • • • • • • • • • • • • The CMP-01 is a monolithic fast precision voltage compara tor using an advanced NPN-Schottky Barrier Diode process.
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180ns
CMP-01
cmp01c
CMP01CP
CMP01CJ
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Si9901BJ
Abstract: Si9901 SI9911 S1-99 S19901 SI99-01 si9914 Si9911/SI9914 M/PD-500
Text: S ilic o n ix SÌ9901 A M em ber o f th e T e m ic G ro u p Adaptive Low-Side Power MOSFET Driver Features • 500-V Interface to High-Side Driver • Internal Oscillator for High-Side Charge Pump • Internal 500-V Bootstrap Diode • dv/dt and di/dt Control
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Si9901
Si9911/9914
AA07502--
Si9901
Si9901BJ
SI9911
S1-99
S19901
SI99-01
si9914
Si9911/SI9914
M/PD-500
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SKKL91
Abstract: No abstract text available
Text: SEMIKRON 15E o INC T -Z S -Z .3 , Thyr stor V rsm Diode V V drm V rrm V V rsm V rrm V 1500 1400 2000 1700 1600 2500 R.M.S. motor ci irrent per phase) Symbol Conditions It r m s ; Ifrms It s m ; Ifsm max. Tvj Tvj ft Tvj Tv) (di/dt)cr (dv/dt)cr Tvj tq Tvj
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CMP-01
Abstract: No abstract text available
Text: CM P-Ol Ipmì FAST PRECISION COMPARATOR P r e c i s i o n M o n o l i t h i c * Inc. FEATURES GENERAL DESCRIPTIO N • • • • • • • • • • • • The CMP-01 Is a monolithic fast precision voltage compara tor using an advanced NPN-Schottky Barrier Diode process.
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CMP-01
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Untitled
Abstract: No abstract text available
Text: Y B 3 1 1 S 6 I4 A k FAST RECOVERY DIODE : Features • St W i t 9 *&#*<* t i t - . y Ji' = e - t o Y M ? Insulate d p a ckage by fu lly m o ld in g . H ig h vo lta g e by m esa d e s ig n . • SftiRte C onnection D iagram H igh re lia b ility • f f l i i i : A p p lica tio n s
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I95t/R
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Untitled
Abstract: No abstract text available
Text: ^ • HOMffiROr 7BT4bEl ODOl1214l1 0*13 ■ CM75TF-12H Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 S ÍX -IG B T IG B T M O D H-Series Module 75 Amperes/600 Volts X, Q .Xi Q .Xi N Z -M 4 T H D (7 TYP.) I H. M .
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CM75TF-12H
Amperes/600
200Hlllls
DDCH252
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SMD diode c5c
Abstract: No abstract text available
Text: |p | 0 pp 11 q ^ I Provisional Datd ShGGt No. PD-9.1545 IQR Rectifier HEXFET POWER MOSFET IRFN044 N -C H A N N E L 60 Volt, 0 .0 4 0 0 HEXFET H E X F E T technology is the key to International Rectifier's advanced line of power MOSFET transis tors. The efficient geometry achieves very low onstate resistance combined with high transconductance.
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Untitled
Abstract: No abstract text available
Text: 8-CHANNEL SOURCE D RIVERS U D N 2580A and U D N 2585A This versatile family of integrated circuits will work with many combinations of logic- and load-voltage levels, meeting interface requirements beyond the capabilities of standard logic buffers. Series
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N2580A
A2580SLW
UDN2580A
2580SLW
00QBB7M
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2580A
Abstract: DN-2588
Text: SPRAGUE/SEM ICOND GROUP TS D • flS13fl5G DOOSbBfi 2 T -5 2 -1 3 -0 7 8514019 SPRAGUE. SEM IC O N D S/ I C S 92D 02638 D SERIES UDN-2580A 8-CHANNEL HIGH-CURRENT SOURCE DRIVERS SERIES UDN-2580A 8-CHANNEL SOURCE DRIVERS FEATURES • TTL, CMOS, PMOS, NMOS Compatible
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flS13fl5G
UDN-2580A
-2580A
fDN-2580A
D002h44
UDN-2580A
2580A
DN-2588
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short circuit protection schematic diagram ca723
Abstract: CA723CE schematic diagram 12V to 3V dc voltage regulator transistor jsu TRANSISTOR 2SC CA723 CA723CE equivalent
Text: i n t e r a g CA723, CA723C i A p r il 1999 D ata S h e e t Voltage Regulators Adjustable from 2 V to 37V at Output Currents Up to 150mA without External Pass Transistors F ile N u m b e r 7 8 8 .4 Features • Up to 150m A Output Current • Positive and Negative Voltage Regulation
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CA723,
CA723C
150mA
A723C
150mA.
short circuit protection schematic diagram ca723
CA723CE
schematic diagram 12V to 3V dc voltage regulator
transistor jsu
TRANSISTOR 2SC
CA723
CA723CE equivalent
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UDN2580
Abstract: UDN2580A B1458 UDN2585LW UDN2588A-1 UDN2580LW UDN2585A UDN2588A LN 358 n UDN-2588A-1
Text: t i q *•* + -t.< * hJ <£> G> Pi > 8-CHANNEL SOURCE DRIVERS This versatile family of integrated circuits will work with many combinations of logic- and load-voltage levels, meeting interface requirements beyond the capabilities of standard logic buffers. Series
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UDN2580/85LW
UDN2580/85A
UDN2580A/LW
UDN2580A
UDN2580LW
0S0433Ã
0DD77b4
B-1458A
UDN2580
B1458
UDN2585LW
UDN2588A-1
UDN2585A
UDN2588A
LN 358 n
UDN-2588A-1
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lm547
Abstract: MSI Electronics diodes ir10 DHA6522B DIODE JSu 1M1401 1M1404 1M1412 1M5139 LT3973-3.3
Text: Il S I ELECTRONICS INC HÛE D IR O S O electronics n. • 5bSb4bb 0000411 054 « M S I 1M-1/92 Series 1M1401 - 1M1412 1M6520 - 1M6525 1M5461A-1M547 6A SURFACE MOUNT TUNING DIODES - f - o T - l 0» The 1M series tuning diodes are electronically variable capacitors packaged for surface mount assembly. Mounted
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lM-1/92
1M1401
1M1412
1M6520
1M6525
1M5461A-1M547
MV1404
availab473A
1M5453A
1M5692A
lm547
MSI Electronics
diodes ir10
DHA6522B
DIODE JSu
1M1404
1M5139
LT3973-3.3
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HRMA-0470B
Abstract: Semicon volume 1 HPMA-2085 HP 33002A AVANTEK ATF26884 SJ 2036 HPMA-0470TXV HPMA-0485 HPMA-0370 DIODE GOC 61
Text: Whal HEWLETT \HrJk PACKARD Communications Components Designer’s Catalog, GaAs and Silicon Products A Brief Sketch Hewlett-Packard is one of the world’s leading designers and manufacturers of RF and microwave semiconductors, optoelectronic, and fiber optic
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E-28230
S-164
CH-8902
HRMA-0470B
Semicon volume 1
HPMA-2085
HP 33002A
AVANTEK ATF26884
SJ 2036
HPMA-0470TXV
HPMA-0485
HPMA-0370
DIODE GOC 61
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TRIAC bt 824
Abstract: BT 804 triac BT 806 TRIAC TRIAC BT 812 TRIAC BT 804 TLP250 application TLP503 TLP501 TLP250 mosfet gate Driver circuit dc motor speed control with s.c.r bt 151
Text: 8. Application Note 8-1 8-1-1 Outline of Photocouplers Description of Photocouplers for General Purposes • Structure and Basic Characteristics Demand for photocouplers entered a real growth period around 1977. The background for this is the increasing application in signal transmission between CPU and peripheral
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