GEZ DIODE
Abstract: 4-KD20 GEZ 26 42kD
Text: IGBT SCR / Diode Modules Presspacks Stacks Outlines Accessories Explanations 54 KD 20.X-V . für Bauelemente s=26 103 (127) Anschluß an Stromschienen muß elastisch erfolgen. 103 (127) Anzahl Thy./Di. Typ L1 L2 6 (s=14mm) 4 (s=14mm) 2 (s=14mm) 6 (s=26mm)
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-KD20
4-KD20
2-KD20
62-KD20
42-KD20
GEZ DIODE
GEZ 26
42kD
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GEZ DIODE
Abstract: GEZ 26 2-KD20 "Temperature Switch" 2kd20 Diode KD 202 KD 310 Diode KD 6 17 gez 8.5 diode 54kd
Text: IGBT SCR / Diode Modules Presspacks Stacks Outlines Accessories Explanations 54 KD 20.X-V . für Bauelemente s=26 103 (127) Anschluß an Stromschienen muß elastisch erfolgen. 103 (127) Anzahl Thy./Di. Typ L1 L2 6 (s=14mm) 4 (s=14mm) 2 (s=14mm) 6 (s=26mm)
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-KD20
4-KD20
2-KD20
62-KD20
42-KD20
GEZ DIODE
GEZ 26
"Temperature Switch"
2kd20
Diode KD 202
KD 310
Diode KD 6 17
gez 8.5 diode
54kd
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VSKDS409/150
Abstract: 40HFL40S02 IRFP460 VSKDS409
Text: VSKDS409/150 Vishay High Power Products ADD-A-PAK Generation VII Power Modules Schottky Rectifier, 200 A FEATURES • 175 °C TJ operation • Low forward voltage drop • High frequency operation • Low thermal resistance • Compliant to RoHS directive 2002/95/EC
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VSKDS409/150
2002/95/EC
18-Jul-08
VSKDS409/150
40HFL40S02
IRFP460
VSKDS409
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Untitled
Abstract: No abstract text available
Text: VSKDS409/150 Vishay Semiconductors ADD-A-PAK Generation VII Power Modules Schottky Rectifier, 200 A FEATURES • • • • • • 175 °C TJ operation Low forward voltage drop High frequency operation Low thermal resistance Compliant to RoHS Directive 2002/95/EC
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VSKDS409/150
2002/95/EC
VSKDS409/150
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: VSKDS409/150 Vishay Semiconductors ADD-A-PAK Generation VII Power Modules Schottky Rectifier, 200 A FEATURES • • • • • • 175 °C TJ operation Low forward voltage drop High frequency operation Low thermal resistance Compliant to RoHS Directive 2002/95/EC
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VSKDS409/150
2002/95/EC
VSKDS409/150
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: VSKDS409/150 www.vishay.com Vishay Semiconductors ADD-A-PAK Generation VII Power Modules Schottky Rectifier, 200 A FEATURES • 175 °C TJ operation • Low forward voltage drop • High frequency operation • Low thermal resistance • Compliant to RoHS Directive 2002/95/EC
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VSKDS409/150
2002/95/EC
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: VS-VSKDS409/150 www.vishay.com Vishay Semiconductors ADD-A-PAK Generation VII Power Modules Schottky Rectifier, 200 A FEATURES • 175 °C TJ operation • Low forward voltage drop • High frequency operation • UL approved file E78996 • Low thermal resistance
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VS-VSKDS409/150
E78996
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: VSKDS409/150 www.vishay.com Vishay Semiconductors ADD-A-PAK Generation VII Power Modules Schottky Rectifier, 200 A FEATURES • 175 °C TJ operation • Low forward voltage drop • High frequency operation • Low thermal resistance • Compliant to RoHS Directive 2002/95/EC
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VSKDS409/150
2002/95/EC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: VSKDS409/150 www.vishay.com Vishay Semiconductors ADD-A-PAK Generation VII Power Modules Schottky Rectifier, 200 A FEATURES • 175 °C TJ operation • Low forward voltage drop • High frequency operation • UL approved file E78996 • Low thermal resistance
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VSKDS409/150
E78996
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: VSKDS409/150 www.vishay.com Vishay Semiconductors ADD-A-PAK Generation VII Power Modules Schottky Rectifier, 200 A FEATURES • 175 °C TJ operation • Low forward voltage drop • High frequency operation • Low thermal resistance • Compliant to RoHS Directive 2002/95/EC
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VSKDS409/150
2002/95/EC
VSKDS409/150
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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irkds409
Abstract: 40HF diode schottky 400A fp460 500 va sine wave ups circuit
Text: Bulletin I27252 09/06 IRKDS409/150P SCHOTTKY RECTIFIER 200 Amp Description/ Features The IRKDS409. Schottky rectifier doubler module has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 175 °C junction temperature. Typical
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I27252
IRKDS409/150P
IRKDS409.
irkds409
40HF
diode schottky 400A
fp460
500 va sine wave ups circuit
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40HF
Abstract: No abstract text available
Text: Bulletin I27262 rev. A 12/06 IRKDS209/150P SCHOTTKY RECTIFIER 100 Amp Description/ Features The IRKDS209. Schottky rectifier doubler module has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 175 °C junction temperature. Typical
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I27262
IRKDS209/150P
IRKDS209.
40HF
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Untitled
Abstract: No abstract text available
Text: SEMiX302KD16s Absolute Maximum Ratings Symbol Conditions Values Unit A Recitifier Diode Tc = 85 °C 300 Tc = 100 °C 240 A Tj = 25 °C 8500 A Tj = 130 °C 7500 A Tj = 25 °C 361000 A²s Tj = 130 °C 281000 A²s VRSM 1700 V VRRM 1600 V -40 . 130 °C -40 . 125
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SEMiX302KD16s
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Untitled
Abstract: No abstract text available
Text: SEMiX191KD16s Absolute Maximum Ratings Symbol Conditions Values Unit Tc = 85 °C 190 A Tc = 100 °C 145 A Tj = 25 °C 6000 A Tj = 130 °C 5000 A Tj = 25 °C 180000 A²s Tj = 130 °C 125000 A²s VRSM 1700 V VRRM 1600 V -40 . 130 °C -40 . 125 °C 1 min
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SEMiX191KD16s
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40HFL40S02
Abstract: IRFP460 ADD-A-PAK weight ADD-A-Pak
Text: VSKDS401/045 Vishay High Power Products ADD-A-PAK Generation VII Power Modules Schottky Rectifier, 200 A FEATURES • 175 °C TJ operation • Low forward voltage drop • High frequency operation • Low thermal resistance • UL pending • Compliant to RoHS directive 2002/95/EC
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VSKDS401/045
2002/95/EC
18-Jul-08
40HFL40S02
IRFP460
ADD-A-PAK weight
ADD-A-Pak
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Untitled
Abstract: No abstract text available
Text: SEMiX191KD16s Absolute Maximum Ratings Symbol Conditions Values Unit A Recitifier Diode Tc = 85 °C 190 Tc = 100 °C 145 A Tj = 25 °C 6000 A Tj = 130 °C 5000 A Tj = 25 °C 180000 A²s Tj = 130 °C 125000 A²s VRSM 1700 V VRRM 1600 V -40 . 130 °C -40 . 125
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SEMiX191KD16s
SEMiX191KD16s
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SEMiX302KD16s
Abstract: semikron thyristor
Text: SEMiX302KD16s Absolute Maximum Ratings Symbol Conditions Values Unit A Recitifier Diode Tc = 85 °C 300 Tc = 100 °C 240 A Tj = 25 °C 8500 A Tj = 130 °C 7500 A Tj = 25 °C 361000 A2s Tj = 130 °C 281000 A2s VRSM 1700 V VRRM 1600 V -40 . 130 °C -40 . 125
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SEMiX302KD16s
SEMiX302KD16s
semikron thyristor
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Untitled
Abstract: No abstract text available
Text: SEMiX302KD16s Absolute Maximum Ratings Symbol Conditions Values Unit Tc = 85 °C 300 A Tc = 100 °C 240 A Tj = 25 °C 8500 A Tj = 130 °C 7500 A Tj = 25 °C 361000 A²s Tj = 130 °C 281000 A²s VRSM 1700 V VRRM 1600 V -40 . 130 °C -40 . 125 °C 1 min
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SEMiX302KD16s
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Untitled
Abstract: No abstract text available
Text: SEMiX191KD16s Absolute Maximum Ratings Symbol Conditions Values Unit A Recitifier Diode Tc = 85 °C 190 Tc = 100 °C 145 A Tj = 25 °C 6000 A Tj = 130 °C 5000 A Tj = 25 °C 180000 A2s Tj = 130 °C 125000 A2s VRSM 1700 V VRRM 1600 V -40 . 130 °C -40 . 125
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SEMiX191KD16s
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Untitled
Abstract: No abstract text available
Text: SEMiX302KD16s Absolute Maximum Ratings Symbol Conditions Values Unit A Recitifier Diode Tc = 85 °C 300 Tc = 100 °C 240 A Tj = 25 °C 8500 A Tj = 130 °C 7500 A Tj = 25 °C 361000 A²s Tj = 130 °C 281000 A²s VRSM 1700 V VRRM 1600 V -40 . 130 °C -40 . 125
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SEMiX302KD16s
SEMiX302KD16s
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1084 GE
Abstract: IRG4PSC71
Text: International IÖR Rectifier PD - 91684 IRG4PSC71 KD PRELIMINARY Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTO R WITH ULTRAFAST SO FT RECOVERY DIODE Features Vces = 6 0 0 V • H ole-less clip /p re ssu re m ou nt pa ckag e com p atib le
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IRG4PSC71
1084 GE
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Untitled
Abstract: No abstract text available
Text: 3bE D S E M I K R O N INC V rsm • 0l3L>b71 G 0 0 2 2 4 b SEMIKRON ^.n .0-7 60 A SEMIPACK 0 Rectifier Diode Modules 38 A SKKD15 SKKE15 Ifrms m aximum values fo r continuous operation V rrm 24 A21; 28 A31 I 2 4 A 2);2 8 A 3) I I fav ( sin. 180; Tease ~ 7 1°C )
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SKKD15
SKKE15
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kd 502
Abstract: kd smd transistor transistor Kd 502 kd transistor smd
Text: International IÖR Rectifier PD - 91723 IR G 4 Z C 7 1 K D PRELIMINARY Surface Mountable Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • High sh o rt circu it rating op tim ize d fo r m otor
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Untitled
Abstract: No abstract text available
Text: PD - 91729 International I R Rectifier IRG4ZH71KD PRELIMINARY Surface Mountable Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • High short circuit rating optimized for motor control, tsc =10 as, VCc = 7 2 0 V , T j = 125°C,
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IRG4ZH71KD
SMD-10
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