DI 156 S
Abstract: KA206 THY 101 S2614 kc202e k*206
Text: SCR/Diode Modules IGBT Presspacks Stacks Outlines Accessories Explanations 52 KA 20.X-V 91 115 91(115) Anschluß an Stromschienen muß elastisch erfolgen. 29(41) 45 (.) für Bauelemente s=26 Anzahl Thy./Di. Typ L1 L2 6 (s=14mm) 4 (s=14mm) 2 (s=14mm) 6 (s=26mm)
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-KA20
4-KA20
2-KA20
62-KA20
42-KA20
20-XE
-KC20-3E
-KC20-2E
DI 156 S
KA206
THY 101
S2614
kc202e
k*206
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BYT08P-400
Abstract: BYT08PI-400
Text: BYT08P-400 BYT08PI-400 FAST RECOVERY RECTIFIER DIODES MAIN PRODUCT CHARACTERISTICS IF AV 8A VRRM 400 V VF (max) 1.4 V trr (max) 35 ns A A FEATURES AND BENEFITS • ■ ■ ■ K K VERY LOW REVERSE RECOVERY TIME VERY LOW SWITCHING LOSSES LOW NOISE TURN-OFF SWITCHING
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BYT08P-400
BYT08PI-400
O-220AC
T0-220AC
BYT08P-400
BYT08PI-400
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BYW51-200
Abstract: BYW51F-200 BYW51FP-200 BYW51G-200 BYW51R-200
Text: BYW51/F/G/FP/R-200 HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES MAIN PRODUCT CHARACTERISTICS IF AV 2 x 10 A VRRM 200 V Tj (max) 150 °C VF (max) 0.85 V trr (max) 25 ns A1 K A2 A2 K A1 TO-220FPAB BYW51FP-200 FEATURES AND BENEFITS SUITED FOR SMPS VERY LOW FORWARD LOSSES
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BYW51/F/G/FP/R-200
O-220FPAB
BYW51FP-200
ISOWATT220AB
O-220FP)
O-220AB
BYW51-200
BYW51G-200
O-220AB,
ISOWATT22cs.
BYW51-200
BYW51F-200
BYW51FP-200
BYW51G-200
BYW51R-200
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STPR1020CB
Abstract: 1E 5W STPR1020CT STPR1020CB-TR STPR1020CF STPR1020CFP STPR1020CG STPR1020CR diode k 0368
Text: STPR1020CB/CG/CT/CF/CFP/CR ULTRA-FAST RECOVERY RECTIFIER DIODES A1 MAIN PRODUCTS CHARACTERISTICS K IF AV 2x5A VRRM 200 V Tj (max) 150°C VF (max) 0.99 V trr (max) A2 A1 30 ns • ■ ■ ■ A2 SUITED FOR SMPS LOW LOSSES LOW FORWARD AND REVERSE RECOVERY
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STPR1020CB/CG/CT/CF/CFP/CR
ISOWATT220AB
O-220FPAB
O-220AB,
O-220FPAB
ISOWATT220AB,
STPR1020CB
1E 5W
STPR1020CT
STPR1020CB-TR
STPR1020CF
STPR1020CFP
STPR1020CG
STPR1020CR
diode k 0368
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BYT08P-400
Abstract: No abstract text available
Text: BYT08P-400 BYT08PI-400 FAST RECOVERY RECTIFIER DIODES MAIN PRODUCT CHARACTERISTICS IF AV 8A VRRM 400 V VF (max) 1.4 V trr (max) 35 ns ) s ( ct du A FEATURES AND BENEFITS • ■ ■ ■ K VERY LOW REVERSE RECOVERY TIME VERY LOW SWITCHING LOSSES LOW NOISE TURN-OFF SWITCHING
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BYT08P-400
BYT08PI-400
O-220AC
T0-220AC
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RBO08-40G
Abstract: RBO08-40T RBO08-40M VF13 aluminium plane heatsink
Text: RBO08-40G/M/T REVERSED BATTERY AND Application Specific Discretes A.S.D.TM OVERVOLTAGE PROTECTION CIRCUIT RBO FEATURES 8A DIODE TO GUARD AGAINST BATTERY REVERSAL. NEGATIVE OVERVOLTAGE PROTECTION BY CLAMPING. COMPLIANT WITH ISO/DTR 7637 STANDARD FOR PULSES 1, 2, 3a and 3b.
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RBO08-40G/M/T
RBO08-40G
PowerSO-10TM
RBO08-40M
RBO08-40G
RBO08-40T
RBO08-40M
VF13
aluminium plane heatsink
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IXFH18N90P
Abstract: ixfh18n90 IXFV18N90P IXFV18N90PS PLUS220SMD 18n90
Text: PolarTM Power MOSFET HiPerFETTM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFH18N90P IXFT18N90P IXFV18N90P IXFV18N90PS VDSS ID25 = = ≤ ≤ RDS on trr 900V 18A Ω 600mΩ 300ns TO-247 (IXFH) G D D (TAB) S TO-268 (IXFT) Symbol Test Conditions
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IXFH18N90P
IXFT18N90P
IXFV18N90P
IXFV18N90PS
300ns
O-247
O-268
PLUS220SMD
18N90P
IXFH18N90P
ixfh18n90
IXFV18N90P
IXFV18N90PS
PLUS220SMD
18n90
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STB9NK60ZD
Abstract: No abstract text available
Text: STP9NK60ZD - STF9NK60ZD STB9NK60ZD N-CHANNEL 600V - 0.85Ω - 7A TO-220/TO-220FP/D2PAK Fast Diode SuperMESH MOSFET TARGET DATA TYPE STP9NK60ZD STF9NK60ZD STB9NK60ZD • ■ ■ ■ ■ ■ ■ VDSS RDS on ID Pw 600 V 600 V 600 V < 0.95 Ω < 0.95 Ω < 0.95 Ω
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STP9NK60ZD
STF9NK60ZD
STB9NK60ZD
O-220/TO-220FP/D2PAK
STP9NK60ZD
STB9NK60ZD
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schaffner ri 229 pc
Abstract: Schaffner it 245 Schaffner NSG 510 RBO40-40G RBO40-40M RBO40-40T VF13 load dump pulse Schaffner load dump generator diode ir31
Text: RBO40-40G/M/T REVERSED BATTERY AND Application Specific Discretes A.S.D.TM OVERVOLTAGE PROTECTION CIRCUIT RBO FEATURES PROTECTION AGAINST "LOAD DUMP" PULSE 40A DIODE TO GUARD AGAINST BATTERY REVERSAL MONOLITHIC STRUCTURE FOR GREATER RELIABILITY BREAKDOWN VOLTAGE : 24 V min.
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RBO40-40G/M/T
RBO40-40G
PowerSO-10TM
RBO40-40M
O220AB
RBO40-40T
schaffner ri 229 pc
Schaffner it 245
Schaffner NSG 510
RBO40-40G
RBO40-40M
RBO40-40T
VF13
load dump pulse
Schaffner load dump generator
diode ir31
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Untitled
Abstract: No abstract text available
Text: STPSC10H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure
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STPSC10H065
O-220AC
STPSC10H065D
STPSC10H065G-TR
DocID023604
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GEZ DIODE
Abstract: GEZ 26 2-KD20 "Temperature Switch" 2kd20 Diode KD 202 KD 310 Diode KD 6 17 gez 8.5 diode 54kd
Text: IGBT SCR / Diode Modules Presspacks Stacks Outlines Accessories Explanations 54 KD 20.X-V . für Bauelemente s=26 103 (127) Anschluß an Stromschienen muß elastisch erfolgen. 103 (127) Anzahl Thy./Di. Typ L1 L2 6 (s=14mm) 4 (s=14mm) 2 (s=14mm) 6 (s=26mm)
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-KD20
4-KD20
2-KD20
62-KD20
42-KD20
GEZ DIODE
GEZ 26
"Temperature Switch"
2kd20
Diode KD 202
KD 310
Diode KD 6 17
gez 8.5 diode
54kd
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Untitled
Abstract: No abstract text available
Text: TC7320 Six Pair, N- and P-Channel Enhancement-Mode MOSFET Features General Description Six N- and P-channel MOSFET pairs Integrated gate-to-source resistor Integrated gate-to-source Zener diode Low threshold Low on-resistance Low input capacitance Fast switching speeds
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TC7320
TC7320
32-lead
DSFP-TC7320
C122208
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Untitled
Abstract: No abstract text available
Text: STPSC4H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A K K A K TO-220AC STPSC4H065D K A The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material
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STPSC4H065
O-220AC
STPSC4H065D
DocID023598
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DMV1500M
Abstract: IR 92 0151 DMV1500M7 DMV1500M7F5
Text: DMV1500M7 DAMPER + MODULATION DIODE FOR VIDEO DAMPER MODULATION MAIN PRODUCT CHARACTERISTICS MODUL DAMPER IF AV 3A 6A VRRM 700 V 1500 V trr (max) 55 ns 135 ns VF (max) 1.55 V 1.65 V 1 2 3 1 • ■ ■ ■ ■ ■ ■ ■ 3 Insulated TO-220AB (Bending option F5 available)
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DMV1500M7
O-220AB
DMV1500M
IR 92 0151
DMV1500M7
DMV1500M7F5
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DMV1500H
Abstract: DMV1500HF5
Text: DMV1500H DAMPER + MODULATION DIODE FOR VIDEO DAMPER MODULATION MAIN PRODUCT CHARACTERISTICS MODUL DAMPER IF AV 3A 6A VRRM 600 V 1500 V trr (max) 50 ns 125 ns VF (max) 1.4 V 1.7 V 1 2 3 1 • ■ ■ ■ ■ ■ ■ 3 Insulated TO-220AB (Bending option F5 available)
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DMV1500H
O-220AB
DMV1500H
DMV1500HF5
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ld1014d
Abstract: Lovoltech pn diode POWERJFET
Text: PWRLITE LD1014D High Performance N-Channel POWERJFETTM with PN Diode Features Description The Power JFET transistor from Lovoltech is a device that presents a Low Rdson allowing for improved efficiencies in DCDC switching applications. The device is designed with a low
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LD1014D
ld1014d
Lovoltech
pn diode
POWERJFET
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FQP60N03L
Abstract: 533B 600B AB-11 MBRD835L RC5058 c 9647
Text: Application Note 9014 July, 2000 Fairchild QFET for Synchronous Rectification DC to DC Converters by K.S. Oh 1. Introduction Fairchild is currently developing and marketing a new QFET series that has improved RDS on , gate charge, and switching speed characteristics. The superior features of these QFETs are
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FQP60N03L
FQP60N03L
533B
600B
AB-11
MBRD835L
RC5058
c 9647
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plus220smd
Abstract: 36N50P IXFH36N50P
Text: Advance Technical Information PolarHVTM HiPerFET Power MOSFET IXFH 36N50P IXFT 36N50P IXFV 36N50P IXFV 36N50PS N-Channel Enhancement ModeAvalanche Rated Fast Intrinsic Diode VDSS ID25 = 500 V = 36 A Ω = 170 mΩ RDS on TO-247 AD (IXFH) (TAB) Symbol Test Conditions
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36N50P
36N50PS
O-247
405B2
IXFH36N50P
plus220smd
36N50P
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Untitled
Abstract: No abstract text available
Text: DMV56 DAMPER + MODULATION DIODE FOR VIDEO MAIN PRODUCT CHARACTERISTICS DAMPER MODUL DAMPER IF AV 6A 6A VRRM 600 V 1500 V trr 50 ns 135 ns VF (max) 1.5 V 1.5 V 1 1 MODULATION 2 3 3 2 TO-220I (Bending option F5 available) FEATURES AND BENEFITS FULLKITIN ONE PACKAGE
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DMV56
O-220I
DMV56
56kHZ
DTV56
O-220I
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Untitled
Abstract: No abstract text available
Text: DATA SHEET SKY12210-478LF: 0.9 to 4.0 GHz, 100 W High Power Silicon PIN Diode SPDT Switch Applications ANT • Transmit/receive switching and failsafe switching in TD-SCDMA, WiMAX, and LTE base stations Transmit/receive switching in land mobile radios and military
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SKY12210-478LF:
16-pin,
J-STD-020)
201634G
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Untitled
Abstract: No abstract text available
Text: STPSC10TH13TI Dual 650 V power Schottky silicon carbide diode in series Datasheet - production data Description 1 The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material
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STPSC10TH13TI
DocID024699
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Untitled
Abstract: No abstract text available
Text: DATA SHEET SKY12210-478LF: 0.9 to 4.0 GHz, 100 W High Power Silicon PIN Diode SPDT Switch Applications ANT • Transmit/receive switching and failsafe switching in TD-SCDMA, WiMAX, and LTE base stations Transmit/receive switching in land mobile radios and military
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SKY12210-478LF:
16-pin,
J-STD-020)
201634F
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BUJD103AD
Abstract: No abstract text available
Text: BUJD103AD NPN power transistor with integrated diode Rev. 02 — 6 October 2009 Product data sheet 1. Product profile 1.1 General description High voltage, high speed, planar passivated NPN power switching transistor with integrated anti-parallel E-C diode in a SOT428 DPAK surface-mountable plastic
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BUJD103AD
OT428
BUJD103AD
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BYT16P-400
Abstract: No abstract text available
Text: BYT16P-400 FAST RECOVERY RECTIFIER DIODES MAIN PRODUCT CHARACTERISTICS I f a v 16 A V rrm 400 V V f (max) 1.4 V trr (max) 35 ns A 2 •— K N .— FEATURES AND BENEFITS ■ VERY LOW REVERSE RECOVERY TIME ■ VERY LOW SWITCHING LOSSES ■ LOW NOISE TURN-OFF SWITCHING
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OCR Scan
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BYT16P-400
T0-220AB
BYT16P-400
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