Untitled
Abstract: No abstract text available
Text: GWM 160-0055P3 VDSS = 55 V = 160 A ID25 RDSon typ. = 2.0 mW Three phase full Bridge with Trench MOSFETs in DCB isolated high current package L+ G1 S1 G3 G5 S3 S5 L1 L2 L3 G2 S2 G4 G6 S4 S6 L- Conditions VDSS TJ = 25°C to 150°C Maximum Ratings IF25 IF90 TC = 25°C diode
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160-0055P3
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smd diode code SL
Abstract: smd diode g6 DIODE S4 39 smd diode smd diode code g3 SMD mosfet MARKING code TC S4 SMD Marking Code SMD MARKING CODE s4 smd diode code g4 smd diode code s3 smd diode marking s4 smd diode S6
Text: GWM 160-0055P3 Three phase full Bridge VDSS = 55 V = 160 A ID25 RDSon typ. = 2.0 mW with Trench MOSFETs in DCB isolated high current package L+ G1 S1 G3 G5 S3 S5 L1 L2 L3 G2 S2 G4 G6 S4 S6 L- Conditions VDSS TJ = 25°C to 150°C Maximum Ratings IF25 IF90 TC = 25°C diode
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160-0055P3
smd diode code SL
smd diode g6 DIODE S4 39 smd diode
smd diode code g3
SMD mosfet MARKING code TC
S4 SMD Marking Code
SMD MARKING CODE s4
smd diode code g4
smd diode code s3
smd diode marking s4
smd diode S6
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smd diode A2
Abstract: 935 diode smd smd diode JC 7 smd diode A1 smd diode marking JC A2 diode smd diode k 0368 STPR1620CG smd diode A1 p 070B2
Text: STPR1620CG ULTRA FAST RECOVERY RECTIFIER DIODES FEATURES SUITED FOR SMPS LOW LOSSES LOW FORWARD AND REVERSE RECOVERY TIME HIGH SURGE CURRENT CAPABILITY HIGH AVALANCHE ENERGY CAPABILITY SMD PACKAGE A1 K A2 K A2 A1 DESCRIPTION Low cost dual center tap rectifier suited for
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STPR1620CG
smd diode A2
935 diode smd
smd diode JC 7
smd diode A1
smd diode marking JC
A2 diode smd
diode k 0368
STPR1620CG
smd diode A1 p
070B2
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DIODE smd marking v2
Abstract: diode marking b2 STPR1620CG stpr16
Text: STPR1620CG ULTRA FAST RECOVERY RECTIFIER DIODES FEATURES SUITED FOR SMPS LOW LOSSES LOW FORWARD AND REVERSE RECOVERY TIME HIGH SURGE CURRENT CAPABILITY HIGH AVALANCHE ENERGY CAPABILITY SMD PACKAGE A1 K A2 K A2 DESCRIPTION A1 Low cost dual center tap rectifier suited for
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STPR1620CG
DIODE smd marking v2
diode marking b2
STPR1620CG
stpr16
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smd diode A2
Abstract: diode smd A2 diode BY 127 smd diode marking JC STPR1020CG smd diode JC 7 935 diode smd
Text: STPR1020CG ULTRA FAST RECOVERY RECTIFIER DIODES FEATURES SUITED FOR SMPS LOW LOSSES LOW FORWARD AND REVERSE RECOVERY TIME HIGH SURGE CURRENT CAPABILITY HIGH AVALANCHE ENERGY CAPABILITY SMD PACKAGE A1 K A2 K A2 A1 DESCRIPTION Low cost dual center tap rectifier suited for
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STPR1020CG
smd diode A2
diode smd A2
diode BY 127
smd diode marking JC
STPR1020CG
smd diode JC 7
935 diode smd
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diode smd ED 17
Abstract: smd diode ED ED 1C Diode smd f2 DIODE smd marking v2 DIODE marking ED smd diode A2 smd diode marking v2 STPS1545CG smd diode A1 p
Text: STPS1545CG POWER SCHOTTKY RECTIFIER . . . . FEATURES AND BENEFITS VERY SMALL CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES EXTREMELY FAST SWITCHING LOW FORWARD VOLTAGE DROP HIGH AVALANCHE CAPABILITY LOW THERMAL RESISTANCE SMD PACKAGE A1 K A2 K A2 DESCRIPTION
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STPS1545CG
diode smd ED 17
smd diode ED
ED 1C
Diode smd f2
DIODE smd marking v2
DIODE marking ED
smd diode A2
smd diode marking v2
STPS1545CG
smd diode A1 p
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STPS2045CG
Abstract: smd diode ED smd diode A2 ED 03 Diode
Text: STPS2045CG POWER SCHOTTKY RECTIFIER . . . . FEATURES AND BENEFITS VERY SMALL CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES EXTREMELY FAST SWITCHING LOW FORWARD VOLTAGE DROP HIGH AVALANCHE CAPABILITY LOW THERMAL RESISTANCE SMD PACKAGE A1 K A2 K A2 DESCRIPTION
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STPS2045CG
STPS2045CG
smd diode ED
smd diode A2
ED 03 Diode
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125OC
Abstract: BYW51G-200 DIODE smd marking l3
Text: BYW51G-200 HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES FEATURES SUITED FOR SMPS VERY LOW FORWARD LOSSES NEGLIGIBLE SWITCHING LOSSES HIGH SURGE CURRENT CAPABILITY HIGH AVALANCHE ENERGY CAPABILITY SMD PACKAGE A1 K A2 K A2 A1 DESCRIPTION Dual center tap rectifier suited for switchmode
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BYW51G-200
125OC
BYW51G-200
DIODE smd marking l3
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DIODE smd marking l3
Abstract: 125OC BYW51G-200
Text: BYW51G-200 HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES FEATURES SUITED FOR SMPS VERY LOW FORWARD LOSSES NEGLIGIBLE SWITCHING LOSSES HIGH SURGE CURRENT CAPABILITY HIGH AVALANCHE ENERGY CAPABILITY SMD PACKAGE A1 K A2 K A2 A1 DESCRIPTION Dual center tap rectifier suited for switchmode
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BYW51G-200
DIODE smd marking l3
125OC
BYW51G-200
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Untitled
Abstract: No abstract text available
Text: Comchip Schottky Barrier Rectifier SMD Diode Specialist SR320-HF Thru. SR3200-HF Forward current: 3.0A Reverse voltage: 20 to 200V RoHS Device Halogen Free DO-27 Features 0.052 1.30 0.048(1.20) -Axial lead type devices for through hole design. -Low power loss, high efficiency.
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SR320-HF
SR3200-HF
DO-27
MIL-STD-19500/228
DO-201AD/DO-27
UL94V-0
SR320-HF
SR340-HF
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SR520-HF
Abstract: SR5100-HF sr5 diode
Text: Comchip Schottky Barrier Rectifier SMD Diode Specialist SR520-HF Thru. SR5200-HF Forward current: 5.0A Reverse voltage: 20 to 200V RoHS Device Halogen Free DO-27 Features 0.052 1.30 0.048(1.20) -Axial lead type devices for through hole design. -Low power loss, high efficiency.
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SR520-HF
SR5200-HF
DO-27
MIL-STD-19500/228
DO-201AD/DO-27
SR520-HF
SR540-HF
SR560-HF
SR5100-HF
sr5 diode
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smd diode schottky code marking l2
Abstract: No abstract text available
Text: Comchip Schottky Barrier Rectifier SMD Diode Specialist SR520-G Thru. SR5200-G Forward current: 5.0A Reverse voltage: 20 to 200V RoHS Device DO-27 Features -Axial lead type devices for through hole design. -Low power loss, high efficiency. -High current capability, Low forward voltage drop.
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SR520-G
SR5200-G
DO-27
MIL-STD-19500/228
DO-201AD/DO-27
UL94V-0
SR520-G
SR540-G
smd diode schottky code marking l2
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SR520-G
Abstract: SR540-G SR560-G SR5100-G SR5150-G SR5200-G diode SMD MARKING CODE r5
Text: Comchip Schottky Barrier Rectifier SMD Diode Specialist SR520-G Thru. SR5200-G Forward current: 5.0A Reverse voltage: 20 to 200V RoHS Device DO-27 Features -Axial lead type devices for through hole design. -Low power loss, high efficiency. -High current capability, Low forward voltage drop.
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SR520-G
SR5200-G
DO-27
MIL-STD-19500/228
DO-201AD/DO-27
UL94V-0
SR520-G
SR540-G
SR540-G
SR560-G
SR5100-G
SR5150-G
SR5200-G
diode SMD MARKING CODE r5
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sr5 diode
Abstract: No abstract text available
Text: Comchip Schottky Barrier Rectifier SMD Diode Specialist SR520-HF Thru. SR5200-HF Forward current: 5.0A Reverse voltage: 20 to 200V RoHS Device Halogen Free DO-27 Features 0.052 1.30 0.048(1.20) -Axial lead type devices for through hole design. -Low power loss, high efficiency.
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SR520-HF
SR5200-HF
DO-27
MIL-STD-19500/228
DO-201AD/DO-27
SR520-HF
SR540-HF
SR560-HF
sr5 diode
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E25 SMD diode
Abstract: No abstract text available
Text: Preliminary Data Sheet High Voltage IGBT with Diode IXSX35N120AU1 IXSX35N120AU1S CES C25 Combi Pack Short Circuit SOA Capability CE SAT 1200 V 70 A 4V PLUS TO-247 SMD (IXSX35N120AU1S) Symbol Test Conditions vCES vCGR v GES Tj = 25°C to 150°C; RGE = 1 Mi2
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OCR Scan
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IXSX35N120AU1
IXSX35N120AU1S
O-247TM
IXSX35N120AU1S)
O-247TM
IXSX35N12
IXSX35N12QAU1
E25 SMD diode
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Untitled
Abstract: No abstract text available
Text: ESDAULC6-1U2 Single-line unidirectional ESD protection for high speed interface Datasheet − production data Features • Unidirectional device ■ Ultralow diode capacitance: 0.8 pF ■ Low leakage current ■ 0201 SMD package size compatible ■ Ultra small PCB area: 0.18 mm2
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ST0201
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ESDAULC6-1U2
Abstract: st smd diode marking code
Text: ESDAULC6-1U2 Single-line unidirectional ESD protection for high speed interface Datasheet − production data Features • Unidirectional device ■ Ultralow diode capacitance: 0.8 pF ■ Low leakage current ■ 0201 SMD package size compatible ■ Ultra small PCB area: 0.18 mm2
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ST0201
ESDAULC6-1U2
st smd diode marking code
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Untitled
Abstract: No abstract text available
Text: ESDAXLC6-1BU2 Single-line bidirectional ESD protection for high speed interface Datasheet - production data Features • Bidirectional device • Extra low diode capacitance: 0.4 pF • Low leakage current • 0201 SMD package size compatible • Ultra small PCB area: 0.18 mm2
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DocID023702
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RUBYCON YK CAPACITOR
Abstract: YAGEO resistor sharp optocoupler UEI 10SP050L GLF2012T capacitor electrolytic BC 2432.0015C Rubycon yk SMD diode za GLF2012T100M
Text: STEVAL-ISA012V1 BOM Reference Value Description CON1, CON2 Hartmann/ptr, 2 poles, type PK 7402, 380VAC 16A COW3 Hartmann/ptr, 3 poles, type PK 3503, 380VAC 16A C1 2.2nF/2kV Cera-Mite Corporation 44LD22 Y1 Ceramic Capacitor 20% C 27C3 220ilF 630V TDK C5750X7R2J224M SMD Ceramic Capacitor 20%
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OCR Scan
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STEVAL-ISA012V1
380VAC
44LD22
220ilF
C5750X7R2J224M
2uF450V
330jF
22uF16V
270mR
RUBYCON YK CAPACITOR
YAGEO resistor
sharp optocoupler
UEI 10SP050L
GLF2012T
capacitor electrolytic BC
2432.0015C
Rubycon yk
SMD diode za
GLF2012T100M
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SHINDENGEN DIODE
Abstract: DE10S3L
Text: S U S x /W 7. , V 3 . y _i _ Sur f ace Mounting Device *# 8 1 Diode 7 Schottky Barrier Diode . OUTLINE DIMENSIONS DE10S3L 30 V 10A • SMD • T j 15 0 t ; • ftV f = 0 45V • PnRRM J ''K 3 > V X lS 6 Ü
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OCR Scan
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DE10S3L
SHINDENGEN DIODE
DE10S3L
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smd diode a7
Abstract: schottky diode marking A7 diode marking H2 5011s smd marking 5G smd marking a7 DF30PC3M marking A7 diode SHINDENGEN DIODE A7 diode smd
Text: Schottky Barrier Diode Twin Diode mm DF30PC3M OUTLINE 30V 30A Feature • SMD • SMD • Ultra-Low Vf=0.4V • High lo Rating-Small-RKG • î 3 V f=0.4V M ain Use • K'.yxU-jS?8Bfi± • Reverse connect protection for DC power source • DC OR-output
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OCR Scan
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DF30PC3M
STO-220
smd diode a7
schottky diode marking A7
diode marking H2
5011s
smd marking 5G
smd marking a7
DF30PC3M
marking A7 diode
SHINDENGEN DIODE
A7 diode smd
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Untitled
Abstract: No abstract text available
Text: ESDAXLC6-1BU2K Single-line bidirectional ESD protection for high speed interface Datasheet - production data Features • Bidirectional device • Extra low diode capacitance: 0.25 pF • Low leakage current • 0201 SMD package size compatible • Ultra small PCB area: 0.18 mm2
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DocID024128
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Untitled
Abstract: No abstract text available
Text: IRL640S, SiHL640S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 200 RDS(on) () VGS = 5 V 0.18 Qg (Max.) (nC) 66 Qgs (nC) 9.0 Qgd (nC) 38 Configuration Single D DESCRIPTION SMD-220 K G D S G • Halogen-free According to IEC 61249-2-21 Definition
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IRL640S,
SiHL640S
SMD-220
2002/95/EC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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smd diode B3
Abstract: 1461 smd
Text: IRL640S, SiHL640S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 200 RDS(on) () VGS = 5 V 0.18 Qg (Max.) (nC) 66 Qgs (nC) 9.0 Qgd (nC) 38 Configuration Single D DESCRIPTION SMD-220 K G D S G • Halogen-free According to IEC 61249-2-21 Definition
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IRL640S,
SiHL640S
2002/95/EC
SMD-220
11-Mar-11
smd diode B3
1461 smd
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