smd L21
Abstract: BAS29 BAS31 BAS35
Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company SOT-23 Formed SMD Package BAS29, BAS31, BAS35 SILICON PLANAR EPITAXIAL HIGH-SPEED DIODE BAS29 single diode, BAS31 dual diodes in series and BAS35 dual diodes, common anodes. PACKAGE OUTLINE DETAILS
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ISO/TS16949
OT-23
BAS29,
BAS31,
BAS35
BAS29
BAS31
BAS35
BAS29
BAS31
smd L21
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BAS29
Abstract: BAS31 BAS35 smd L21
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BAS29, BAS31, BAS35 SILICON PLANAR EPITAXIAL HIGH-SPEED DIODE BAS29 single diode, BAS31 dual diodes in series and BAS35 dual diodes, common anodes.
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OT-23
BAS29,
BAS31,
BAS35
BAS29
BAS31
BAS35
BAS29
BAS31
smd L21
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Untitled
Abstract: No abstract text available
Text: SOLID STATE D I V I S I O N LIGHT EMITTING DIODE LED Light Emitting Diode Light emitting diodes LEDs are opto-semiconductors that convert electric energy into light energy. Compared to semiconductor lasers (laser diodes or LD), LEDs offer advantages such
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DK-8381
KLED0002E01
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BAS29
Abstract: BAS31 BAS35
Text: Transys Electronics L I M I T E D SOT-23 BAS29, BAS31, BAS35 SILICON PLANAR EPITAXIAL HIGH-SPEED DIODE BAS29 single diode, BAS31 dual diodes in series and BAS35 dual diodes, common anodes. PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Marking BAS29– L20 BAS31 – L21
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OT-23
BAS29,
BAS31,
BAS35
BAS29
BAS31
BAS35
BAS29
BAS31
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Untitled
Abstract: No abstract text available
Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer SOT-23 Formed SMD Package BAS29, BAS31, BAS35 SILICON PLANAR EPITAXIAL HIGH-SPEED DIODE BAS29 single diode, BAS31 dual diodes in series and BAS35 dual diodes, common anodes.
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OT-23
BAS29,
BAS31,
BAS35
BAS29
BAS31
BAS35
BAS29â
BAS31
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BAS35
Abstract: MMBD1401
Text: BAS35 BAS35 Connection Diagrams 3 3 3 1405 L22 2 SOT-23 1 1 2 2 1 General Purpose High Voltage Diode Sourced from Process 1H. See MMBD1401 for characteristics. Absolute Maximum Ratings* Symbol W IV TA = 25°C unless otherwise noted Parameter Working Inverse Voltage
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BAS35
OT-23
MMBD1401
BAS35
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Untitled
Abstract: No abstract text available
Text: BAS35 BAS35 Connection Diagram 3 3 3 L22 2 1 1 2 1 2 SOT-23 Small Signal Diode Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units VRRM Maximum Repetitive Reverse Voltage 120 V IF AV Average Rectified Forward Current 200
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BAS35
OT-23
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L21 marking code
Abstract: CMPD1001S CMPD1001 CMPD1001A marking c2 diode
Text: Central CMPD1001 CMPD1001A CMPD1001S TM Semiconductor Corp. HIGH CURRENT SWITCHING DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPD1001 series types are silicon switching diodes manufactured by the epitaxial planar process, designed for applications requiring
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CMPD1001
CMPD1001A
CMPD1001S
CMPD1001
OT-23
150oC
100mA
L21 marking code
CMPD1001S
CMPD1001A
marking c2 diode
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MARKING CODE l22
Abstract: l21 code diode marking r5 l21 diode l21 diode marking CODE L22 diode marking ja CMPD1001 Marking code TM SOT23-6 CMPD1001S
Text: Central CMPD1001 CMPD1001A CMPD1001S TM Semiconductor Corp. SURFACE MOUNT HIGH CURRENT SILICON SWITCHING DIODE DESCRIPTION: The Central Semiconductor CMPD1001 series types are silicon switching diodes manufactured by the epitaxial planar process, designed for
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CMPD1001
CMPD1001A
CMPD1001S
CMPD1001
OT-23
MARKING CODE l22
l21 code
diode marking r5
l21 diode
l21 diode marking
CODE L22
diode marking ja
Marking code TM SOT23-6
CMPD1001S
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X9521
Abstract: X9521V20I-A X9521V20I-B X9521V20IZ-A X9521V20IZ-B
Text: X9521 NS ESI G D W R NE UC T D FO E PROD 2323 E D M EN I TU T ISL2 COM SUBST L22329,Data Sheet E R NOT SSIBLE 2326, IS PO SL 2 20, I 8 5 9 X Dual DCP, EEPROM Memory September 21, 2010 Fiber Channel/Gigabit Ethernet Laser Diode Control for Fiber Optic Modules
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X9521
L22323
ISL223
FN8207
X9521
X9521V20I-A
X9521V20I-B
X9521V20IZ-A
X9521V20IZ-B
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philips diode PH 33D
Abstract: PH C5V1 philips diode PH 33m philips diode PH 33J PH 33D PH33D ph33g 33G PH DIODE PH 33G philips diode PH 37m
Text: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817
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1N821
1N821A
1N823
1N823A
1N825
1N825A
1N827
1N827A
1N829
1N829A
philips diode PH 33D
PH C5V1
philips diode PH 33m
philips diode PH 33J
PH 33D
PH33D
ph33g
33G PH DIODE
PH 33G
philips diode PH 37m
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marking A4t sot23
Abstract: A1t SOT23 3Ft SOT23 PH C5V1 transistor t04 sot23 A4T SOT23 transistor marking codes A4p sot23 marking A1T A6t SOT23 marking z2p
Text: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes 1999 Jun 11 Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE
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1N5817
1N821
1N5818
1N821A
1N5819
marking A4t sot23
A1t SOT23
3Ft SOT23
PH C5V1
transistor t04 sot23
A4T SOT23
transistor marking codes A4p
sot23 marking A1T
A6t SOT23
marking z2p
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X9520
Abstract: X9520V20I-A X9520V20I-AT1 X9520V20I-AT2 X9520V20I-B X9520V20I-BT1 X9520V20IZ-A X9520V20IZ-AT1 X9520V20IZ-AT2 X9520V20IZ-B
Text: NS E SI G D W CT R NE ODU Channel/Gigabit Ethernet Laser Diode Control for Fiber Optic Modules R D FO E PFiber E D EN UT T M I T M 6 S O 34 Sheet S UB R EC August 20, 2007 FN8206.2 L22Data NOT SSIBLE 2343, IS 2 O L P IS X9520 Triple DCP, POR, 2kbit EEPROM Memory,
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FN8206
X9520
X9520
X9520V20I-A
X9520V20I-AT1
X9520V20I-AT2
X9520V20I-B
X9520V20I-BT1
X9520V20IZ-A
X9520V20IZ-AT1
X9520V20IZ-AT2
X9520V20IZ-B
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philips diode PH 33D
Abstract: philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE
Text: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)
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1N5817
1N821
1N5818
1N821A
1N5819
philips diode PH 33D
philips diode PH 33J
philips diode PH 33m
DIODE C18 ph
33G PH DIODE
C18 ph
A6t SOT23
C33PH
PH 33G
T2D DIODE
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Untitled
Abstract: No abstract text available
Text: BAS29, BAS31, BAS35 Il SILICON PLANAR EPITAXIAL HIGH-SPEED DIODE BAS29 single diode, BAS31 dual diodes in series and BAS35 dual diodes, common anodes. Marking PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm BAS2&- L20 BAS31 - L21 BAS35 - L22 _3.0_ 2.8 0.46 w -H
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BAS29,
BAS31,
BAS35
BAS29
BAS31
BAS35
BAS31
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Untitled
Abstract: No abstract text available
Text: 83633^4 DDDD718 7b4 • BAS29, BAS31, BAS35 SILICON PLANAR EPITAXIAL HIGH-SPEED DIODE BAS29 single diode, BAS31 dual diodes in series and BAS35 dual diodes, common anodes. Marking PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm BAS29- L20 BAS31 - L21 BAS35 - L22
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DDDD718
BAS29,
BAS31,
BAS35
BAS29
BAS31
BAS35
BAS29-
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Untitled
Abstract: No abstract text available
Text: BAS29, BAS31, BAS35 SILICON PLANAR EPITAXIAL HIGH-SPEED DIODE BAS29 single diode, BAS31 dual diodes in series and BÀS35 dual diodes, common anodes. Marking PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm BAS29- L20 BAS31 - L21 BAS35 L22 J.O 2.8 0.46 H — H i
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BAS29,
BAS31,
BAS35
BAS29
BAS31
BAS29-
BAS35
BAS29
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BAS29
Abstract: BAS31 BAS35 diode 7B4
Text: • E3A33T4 DDDG716 7b4 ■ BAS29, BAS31, BAS35 SILICON PLANAR EPITAXIAL HIGH-SPEED DIODE BAS29 single diode, BAS31 dual diodes in series and BAS35 dual diodes, common anodes. Marking PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm B A S 2 9 - L20 BAS31 - L21
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D00G716
BAS29,
BAS31,
BAS35
BAS29
BAS31
BAS35
BAS29-
diode 7B4
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MMVL229AT1/D SEMICONDUCTOR TECHNICAL DATA M M V L 229A T 1 Advance Information Voltage Variable Capacitance Diode for UHF Band Radio 15 VOLT VOLTAGE VARIABLE CAPACITANCE DIODE This device is designed for UHF tuning and general frequency control and tuning.
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MMVL229AT1/D
OD-323
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FCQ10A04
Abstract: Schottky diode high reverse voltage ST Low Forward Voltage Schottky Diode
Text: SCHOTTKY BARRIER DIODE FCQ10A04 i0A/40v 3.11. L22 FEA TU R ES o Sim ilar to T0-220AB Case o Fully Molded Isolation o D ual Diodes - Cathode Common o L o w F orw ard Voltage Drop o L ow Pow er Loss, High Efficiency OHigh Surge Capability o Wire-Bonded technology
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i0A/40v
FCQ10A04
O-220AB
FCQ10A-
bbl5123
FCQ10A04
Schottky diode high reverse voltage
ST Low Forward Voltage Schottky Diode
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Untitled
Abstract: No abstract text available
Text: Central" CMPD1001 CMPD1001A CMPD1001S Semiconductor Corp. HIGH CURRENT SWITCHING DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPD1001 series types are silicon switching diodes manufactured by the epitaxial planar process, designed for applications requiring
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CMPD1001
CMPD1001A
CMPD1001S
CMPD1001
OT-23
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SMD diode C5C
Abstract: n4148 smd code marking LF sot23 1N4148 SOD-80 diode 1n4148 smd diode 1n SMD diode SMD diode CA6 diode a 4 w Diode N4148
Text: SMD Switching Diodes TY P E NO. CA S E D E S C R IP TIO N V ram VOLTS MAX •o <mA) BAS28 SOT-143 DUAL S W ITC H IN G DIODE, ISO LATED 85 B AS 56 C LL914 SO T-143 DUA L HIG H C U R R E N T DIO DE, ISOLATED S O D -8O L E A D L E S S SW ITC H IN G DIODE C L L2003
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BAS28
BAS56
CLL914
CLL2003
CLL4150
CLL4448
CLL5001
CMPD914
CMPD1001
CMPD1001A
SMD diode C5C
n4148
smd code marking LF sot23
1N4148 SOD-80
diode
1n4148 smd diode
1n SMD diode
SMD diode CA6
diode a 4 w
Diode N4148
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YP diode code marking
Abstract: l21 diode marking L21 marking code
Text: Central CMPD1001 CMPD1001A CMPD1001S Semiconductor Corp. HIGH CURRENT SWITCHING DIODE DESCRIPTION: The CENTRAL SEM ICONDUCTOR CMPD1001 series types are silicon switching diodes manufactured by the epitaxial planar process, designed for applications requiring
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CMPD1001
CMPD1001A
CMPD1001S
OT-23
CMPD1001S
100mA
200mA
YP diode code marking
l21 diode marking
L21 marking code
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marking code fs 1 sot 323
Abstract: R5 MARKING CODE diode l22
Text: Central“ CMPD1001 CMPD1001A CMPD1001S Semiconductor Corp. SURFACE MOUNT HIGH CURRENT SILICON SWITCHING DIODE DESCRIPTION: The Central Semiconductor CMPD1001 series types are silicon switching diodes manufactured by the epitaxial planar process, designed for
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CMPD1001
CMPD1001A
CMPD1001S
OT-23
CMPD1001S
OPD1001S
marking code fs 1 sot 323
R5 MARKING CODE
diode l22
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