IN3595
Abstract: 1N3595
Text: COMPUTER DIODE 1N3595=JAN- J A N T X & jantxv 1N3595 150 mA, S w itch in g ABSO LUTE MAXIMUM RATINGS, AT 25“C FEATURES Peak Reverse V o lta g e .125V Reverse Breakdown V o lt a g e .150V
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1N3595
150mAdc
500mA
83Vdc
125Vdc
79Vdc
92Vdc
30Vdc
50mAdc
74Vdc
IN3595
1N3595
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RF marking N02
Abstract: MBD7000 BD7000 MMBD2836 MMBD2838 MMBD7000 SOT23 5 MARKING N02 Tj-12 m5c3
Text: MM BD2836 / MM BD2838 M M B 1 7000 Surface Mount Switching Diode S W IT C H IN G D IO D E I00-200m A M P E R R E S 75-100 V O LT S Features: *Low Current Leakage *Low Forward Voltage ^Reverse Recover Time Trr<4ns *Small Outline Surface Mount SOT-23 Package
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MMBD2836
MMBD2838
100-200m
OT-23
OT-23
MMBD2838
BD7000
RF marking N02
MBD7000
BD7000
MMBD7000
SOT23 5 MARKING N02
Tj-12
m5c3
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C108T
Abstract: SHINDENGEN DIODE
Text: K y \ Bridge Diode V S AL; I f l # Thä D4SBAD Single In-line Package OUTLINE DIMENSIONS 800V 4A • » s s iP A É r a ltŒ « ra l FSM v ir - y •SR B S •m m , OA. bbœ • S f f l , « g , FA • Æ tè ü R A T IN G S • Îë S 'jli^ Æ t ë m Absolute Maximum Ratings
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Untitled
Abstract: No abstract text available
Text: NON-RELAMPABLE LED INDICATOR LIGHT W DIA. MOUNTING HOLE SERIES 1 0 9 1 M FEATURES Solid-State Indicator Lights Complete With Built-in Current-Limiting Resistor and Rectifier Diode Mounting: Will snap-fit into .500/.505 12.70/12.83 dia. hole in panels .020/
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SN0461
32VAC
24VDC
H74133Ã
0QQ143G
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4n137
Abstract: ic 7474 pin diagram CAC02 series full bridge inverter 500khz square wave ttl 7474 sine wave AD654 IC Timer Cookbook circuit diagram 4-20ma RECEIVER AD595 IC PIN LAYOUT CORNING CAC02
Text: ► ANALOG DEVICES AN-278 APPLICATION NOTE ONE TECHNOLOGY WAY • P.O. BOX 9106 • NORWOOD, MASSACHUSETTS 02062-9106 • 617/329-4700 Operation and Applications of the AD654IC V-to-F Converter* by Walt Jung INTRODUCTION + VS DEVICE DESCRIPTION The AD654 is a monolithic voltage-to-frequency V/F con
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AN-278
AD654IC
AD654
AD537
AD537.
CAC02/03/04/05
4N137
6N135/6N136
ic 7474 pin diagram
CAC02 series
full bridge inverter 500khz square wave
ttl 7474 sine wave
IC Timer Cookbook
circuit diagram 4-20ma RECEIVER
AD595 IC PIN LAYOUT
CORNING CAC02
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H100
Abstract: No abstract text available
Text: m bô 0224S D D Q Q S n OPTO T E CH NO LO GY b INC OPTO TECHNOLOGY R E F L E C T IV E S W IT C H T Y P E OTR 6 5 0 Features • TD-18 reflective sensor ■ .0 3 0 aperture ■ Pho totransistor Description Opto Technology's OTR 650 re flective sensor combines two
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0224S
IL60090
H100
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S41 sensor
Abstract: OTR641 Infrared phototransistor TO18 diameter lens phototransistor sensor s41
Text: •I bô 022M5 0 Q D D E 1 7 2 « I O T I OPTO T E CH NO LO GY INC M2E B -4 -T> OPTO TECHNOLOGY REFLECTIVE SWITCH T Y P E OTR S 41 Features ■ T O -18 reflective sensor ■ .0 2 0 diameter aperture ■ Phototransistor Description Mark sense reading is accomplished with
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022M5
0GDDE17
562CHADDICK
S41 sensor
OTR641
Infrared phototransistor TO18
diameter lens phototransistor
sensor s41
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H244
Abstract: FAH4 PF340 h.out transistor
Text: S-fl 0 S S Y S T E M S INC IDE D | 7 T 3 B ‘i D ci 0[]0[]74b *] | rW/ ~ss~ m m m ^ f f l M ÌS l i ì É i É Ì PF340-02 m m Ú B Sáí M OS AREA IMAGE SENSOR • 8 mm Size Solid State Imaging Device • 2 4 4 Horizontal X 244 (Vertical) Photo Sensor
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PF340-02
2517MHz)
SED3081Fzt)
SEA7010H
H244
FAH4
PF340
h.out transistor
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Untitled
Abstract: No abstract text available
Text: ] NON-RELAMPABLE LED INDICATOR LIGHT V2” DIA. MOUNTING HOLE SERIES 1091QM FEATURES Solid-State Indicator Lights Complete With Built-in Current-Limiting Resistor and Rectifier Diode Mounting: Will snap-fit into .500/.505 12.70/12.83 dia. hole in panels .020/
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1091QM
SN0461
1091QM1-12V
1091QM1-24V
1091QM5-24V
1091QM5-12V
1091QM7-24V
1091QM7-o
32VAC
24VDC
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Untitled
Abstract: No abstract text available
Text: Half Controlled VHFD 16 Single Phase Rectifier Bridge vRRM = 800 -1600 v ldAVM = 21 A Including Freewheeling Diode and Field Diodes vRSM VR R M v DSM VDRM V V 900 1300 1500 1700 800 1200 1400 1600 Type VHFD VHFD VHFD VHFD 16-08io1 16-12io1 16-14io1 16-16io1
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16-08io1
16-12io1
16-14io1
16-16io1
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Untitled
Abstract: No abstract text available
Text: Ô13bb71 000b4MG ^144 • V drm V rsm V V rrm V Id Tease = 62 °C, full conduction 33 A 300 200 SKB 33/02 500 400 SKB 33/04 700 600 SKB 33/06 900 800 SKB 33/08 1100 1000 SKB 33/10 1300 1200 SKB 33/12 Symbol Conditions Id *q Ih II Vt V t (t o ) rr Id d ;Ir d
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13bb71
000b4MG
P1A/120
P1/120F
20-C/W
P1/120
fll3bb71
613bb71
GD0b442
0Q0b443
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"Optical Switch" ots 272
Abstract: optical sensor 1201H
Text: •I O PTO bfl0224S 0QQ017Ô 7 T E C H N 0 L 0 6 Y INC OPTO TECHNOLOGY OPTICAL SWITCH T Y P E OTS 2 7 2 Features ■ Side mount switch ■ .020 aperture ■ Phototransistor Description The OTS 272 optical switch consists of a GaAs infrared em itter and an NPN silicon
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bfl05245
00DD17Ã
562CHADDICK
IL60090
"Optical Switch" ots 272
optical sensor
1201H
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Melcher LT 1740
Abstract: LT1740 melcher LT 1740 melcher DC-DC Converters Melcher lt1740 "AC-DC Converters" AC-DC Battery Charger -Constant Current with volt S3 24A relais Melcher lt LT1000
Text: Rugged Environment AC-DC Converters >100 W 500 W AC-DC Converters T-Family T-Family Input to output Isolation Single output: L T 1000 • Universal AC input range • 54.5 V DC output voltage for 48 V loads • Battery charging with internal or remote temperature
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LT1740
Melcher LT 1740
LT1740 melcher
LT 1740
melcher DC-DC Converters
Melcher lt1740
"AC-DC Converters"
AC-DC Battery Charger -Constant Current with volt
S3 24A relais
Melcher lt
LT1000
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geiger tube
Abstract: LA2300 400d Geiger Geiger-Mueller Mueller Electric Company Raytheon Company geiger mueller
Text: TECHNICAL INFORMATION SUBMINIATURE DIODE TYPE x-c-eJ-LA-n—c- Ç / o - CK5785 T h e C K 5 7 8 5 is a fila m e n t ty p e d io d e r e c t i f i e r o f s u b m in ia tu r e c o n s t r u c tio n d e s ig n e d fo r u se a t c o m p a r a t iv e ly h ig h v o lta g e s and lo w c u r r e n ts .
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CK5785
CK5785
geiger tube
LA2300
400d
Geiger
Geiger-Mueller
Mueller Electric Company
Raytheon Company
geiger mueller
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in4606
Abstract: IN4150 1N4606 1N4150 1N4450 1N4607 1N460B D035 DT230C DT230H
Text: SIGNAL DIODES 100 - 200 M A TYPES 200 - 400 M A TYPES @ Part Number Ir BV 1OOü A Min. V 1N4451 40 1N4607 85 Vf @ 25°C Max. <nA) 1 Max. @ V r (V) (V) @ Ir(mA) Co @ OV (pf) trr Package T»pe (nsec) 50 30 1.00 300 6 10 100 50 1.00 400 4 10 1 Package Outline No.
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100/iA
1N4150*
1N4450
1N4606
100/tA
1N445I
1N4607
1N460B
DT230C
DT230H
in4606
IN4150
1N4150
D035
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in4447
Abstract: IN4446 in4449 DIODe IN4446 1n914 equivalent IN4I48 in4448 IN4305 1N4148 1N4149
Text: SILICON SIGNAL DIODES 100 MA TYPES Part N u m b e r BV @ 100/1A M in . V I r @ 2 5 ° C M ax. (ri A ) @ V r (V ) V f (V ) M ax. @ I f (m A ) Co @ DV (pf) 1N 914 100 25 30 1.00 10 4 1N 914A 100 25 20 1.00 20 4 1N 914B 100 25 20 1.00 100 1N 916 100 25 20
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100/1A
1N914
1N914A
1N914B
1N916
1N916A
1N916B
1N4148*
1N4149
1N4151
in4447
IN4446
in4449
DIODe IN4446
1n914 equivalent
IN4I48
in4448
IN4305
1N4148
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Untitled
Abstract: No abstract text available
Text: SIEMENS CMPNTS-, OPTO MME » 0231335^ DQGSOSD 1 H S I E X MCT6 S IE M E N S FEATURES M axim um R a tin gs • T w o Isolated C h an nels per Package Gallium Arsenide LED each channel 100mW Power Dissipation at 2 5 C . . . . .
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E52744
100mW
23b32ki
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photoresistor LDR 1000
Abstract: photoresistor LDR optocoupler Photoresistor Photocell LDR vldb Photoresistor diode
Text: S I EM EN S A K T I E N G E S E L L S C H A F 47E D • 0 2 3S bD S GQEITTSD 4 ■ SIEG A ~ Mi - 21 Opto-couplers Heimann opto-coupler consist of a combi nation of extremely high-intensity light emit ting diodes LED as emitters and specific photocell as detectors. Both elements are
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fl235b05
LT3011
B--02
photoresistor LDR 1000
photoresistor LDR
optocoupler Photoresistor
Photocell LDR
vldb
Photoresistor diode
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1XFH12n100
Abstract: transistor 13n80
Text: MbE D • 4bflb22b G O D D E S S 4 HIXY I X Y S CORP T - l V l S □IXYS Data Sheet No. 91532A October 1991 HiPerFET POWER MOSFETs N-Channel, High dv/dt, Low trr, HDMOS™ Fam ily C haracteristics Features * Low RDS{on HDMOS™ Process • Rugged Polysilicon Gate Ceil Structure
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4bflb22b
1532A
200ns)
IXFH12N100
IXFH10N100
IXFM12N100
IXFM10N100
1XFH12n100
transistor 13n80
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2SK2520-01MR
Abstract: T0-220F
Text: S P E C I F I C A T I O N DEVICE NAME TYPE NAME Power MOS F E T 2 SK 2 5 2 0 - 0 1 M R SPEC. No. Fuji E l e c t r i c Co.,Ltd. This Specification is subject to change without notice. DATE DRAWN NAME APPROVED Fuji Electric Ca,Lt<± CHECKED 1/1 Y 0257-R-004a
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0257-R-004a
2SK2520-0
T0-220F
0257-R-003a
2SK2520-01MR
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Diode LT 023
Abstract: No abstract text available
Text: Thyristor Modules Thyristor/Diode Modules MCC 95 iTRMS = 2 x 180 A MCD 95 iTAVM =2x116A V = 800-1800 V RRM T 0 -2 4 0 AA v RSM V V DSM V DRM V V Version 1 B 900 1300 1500 1700 1900 800 1200 1400 1600 1800 MCC MCC MCC MCC MCC T y P e rrm 95-08io1 95-12io1 95-14io1
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2x116A
95-08io1
95-12io1
95-14io1
95-16io1
95-18io1
95-08io8
95-12io8
95-16io8
95-18io8
Diode LT 023
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Untitled
Abstract: No abstract text available
Text: F A I R C H June1997 I L D SEM ICONDUCTO R PRELIMINARY tm FDV303N Digital FET, N-Channel General Description Features These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize
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June1997
FDV303N
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Diode LT 228
Abstract: No abstract text available
Text: PD - 9.1365A International IQ R Rectifier IR F R /U 1 2 0 N PRELIMINARY HEXFET Power MOSFET S u rfa c e M o u n t IR F R 1 2 0 N S tra ig h t Lead (IR F U 1 2 0 N ) A d v a n c e d P ro ce ss T e c h n o lo g y F ast S w itch in g F ully A v a la n c h e R ated
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Untitled
Abstract: No abstract text available
Text: G M O T fl^ L G & E & S I Final Electrical Specifications r r wTECHNOLOGY m LTC1481 Ultra-Low Power RS485 Transceiver with Shutdown May 1994 F€flTUR€S D C S C M P T IO n • ■ ■ ■ ■ ■ The LT C 14 8 1 is an ultra-low power differential line trans
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LTC1481
RS485
RS485
600ns
50nsthe
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