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    DIODE LT 02 Search Results

    DIODE LT 02 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE LT 02 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Step-up 12V to 36V 300mA

    Abstract: LT3473 LT3473A LT3473AEDE LT3473EDD LTC3473A ltc3436 3473
    Text: LT3473/LT3473A Micropower 1A Boost Converter with Schottky and Output Disconnect U FEATURES DESCRIPTIO • The LT 3473/LT3473A are micropower step-up DC/DC converters with integrated Schottky diode and output disconnect circuitry in low profile DFN packages. The


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    LT3473/LT3473A 3473/LT3473A 50mm2. LT3471 LT3479 TSSOP-16E 3473f Step-up 12V to 36V 300mA LT3473 LT3473A LT3473AEDE LT3473EDD LTC3473A ltc3436 3473 PDF

    1009I

    Abstract: LT1009CZ LT317A 1009f 406p LT1019 LM136 LT1009 LT1009CH LT1009I
    Text: LT1009 Series 2.5V Reference FEATURES DESCRIPTION n The LT 1009 is a precision trimmed 2.5V shunt regulator diode featuring a maximum initial tolerance of only ±5mV. The low dynamic impedance and wide operating current range enhances its versatility. The 0.2% reference


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    LT1009 LM136 LT1236 LT1460 10ppm/ OT-23 LT1634 LT1461 1009ff 1009I LT1009CZ LT317A 1009f 406p LT1019 LT1009CH LT1009I PDF

    Untitled

    Abstract: No abstract text available
    Text: LT1311 Quad 12MHz, 145ns Settling Precision Current-to-Voltage Converter for Optical Disk Drives U DESCRIPTION FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ The LT 1311 is a quad current-to-voltage converter designed for the demanding requirements of photo diode


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    LT1311 12MHz, 145ns LT1311 14-Lead 20mV/Â 250nA LT1169 LT1213/LT1214 28MHz, PDF

    ltg2

    Abstract: LT3464ETS8
    Text: LT3464 Micropower Boost Converter with Schottky and Output Disconnect in ThinSOT U DESCRIPTIO FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ The LT 3464 is a micropower step-up DC/DC converter with integrated Schottky diode and output disconnect


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    LT3464 115mA, OT-23 3464f LMK107 BJ105MA-T GMK212 BJ334MG-T BJ224MG-T ltg2 LT3464ETS8 PDF

    ltg2

    Abstract: LQH32CN470K LEMC3225 LT3464ETS8 BJ105MA-T murata lqh32cn470k ELJPA470KF LQH32CN220K53 LQH32CN470K53 LQH32CN680K53
    Text: LT3464 Micropower Boost Converter with Schottky and Output Disconnect in ThinSOT U DESCRIPTIO FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ The LT 3464 is a micropower step-up DC/DC converter with integrated Schottky diode and output disconnect


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    LT3464 OT-23. 40mm2. LT3464 115mA LTC3400/ LTC3400B 600mA LTC3401 LTC3402 ltg2 LQH32CN470K LEMC3225 LT3464ETS8 BJ105MA-T murata lqh32cn470k ELJPA470KF LQH32CN220K53 LQH32CN470K53 LQH32CN680K53 PDF

    1311 amplifier

    Abstract: jfet photo diode LT1113 LT1169 LT1215 LT1311 LT1311CS TA03
    Text: LT1311 Quad 12MHz, 145ns Settling Precision Current-to-Voltage Converter for Optical Disk Drives U DESCRIPTION FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ The LT 1311 is a quad current-to-voltage converter designed for the demanding requirements of photo diode


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    LT1311 12MHz, 145ns LT1311 14-Lead 250nA LT1169 LT1213/LT1214 28MHz, LT1215/LT1216 1311 amplifier jfet photo diode LT1113 LT1169 LT1215 LT1311CS TA03 PDF

    LT 485 so8 DATA SHEET

    Abstract: Diode Marking z3 SOT-23 LT1009CZ DATA SHEET LT317A LT317 MS8 PACKAGE 1009I LM136 LT1009 LT1009CH
    Text: LT1009 Series 2.5V Reference U FEATURES DESCRIPTIO • The LT 1009 is a precision trimmed 2.5V shunt regulator diode featuring a maximum initial tolerance of only ±5mV. The low dynamic impedance and wide operating current range enhances its versatility. The 0.2% reference tolerance is achieved by on-chip trimming which not only


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    LT1009 LM136 LT1236 LT1460 10ppm/ OT-23 LT1634 LT1461 1009fd LT 485 so8 DATA SHEET Diode Marking z3 SOT-23 LT1009CZ DATA SHEET LT317A LT317 MS8 PACKAGE 1009I LT1009CH PDF

    LT 0220 diode

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification Damper diode BY559X-1500U ultra fast, FEATURES • • • • • • SYMBOL QUICK REFERENCE DATA Low forw ard vo lt drop Low forw ard recovery voltage


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    BY559X-1500U 150kHz. BY559 LT 0220 diode PDF

    IR E78996

    Abstract: E78996 rectifier module E78996 Diode E78996 E78996 IR IRKH136-16D25 14D20 IR E78996 135 KL23014
    Text: International H ]Rectifier Power Modules Thyristor with high voltage diode Voltage Range lT A V @ T c i f (a v (1) (2) (3) (4) Diode •TSM' >FSM (5) R th JC DC ) (3) (4) Thyristor (V) (V) (A) (°C ) 50 H z (A) IRKH136-14D20 IRKH136-16D25 IRKL136-14D20


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    IRKH136-14D20 IRKH136-16D25 IRKH142-14D20 IRKH142-16D25 IRKH142-18D28 IRKH142-20D32 IRKH162-14D20 IRKH162-16D25 170-14D20 IRKH170-16D25 IR E78996 E78996 rectifier module E78996 Diode E78996 E78996 IR 14D20 IR E78996 135 KL23014 PDF

    Untitled

    Abstract: No abstract text available
    Text: SEM ICONDUCTOR KDZ6.8DE TE CHNICAL DATA ZENER DIODE SILICON EPITAXIAL PLANAR DIODE C O N ST A N T V O LT A G E REG U L A T IO N A PPLIC A TIO N . FEA TU RES • Small package for portable electronics. • Normal Voltage Tolerance About ± 5 % . • Low leakage current.


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    20x20inm PDF

    IN3595

    Abstract: 1N3595
    Text: COMPUTER DIODE 1N3595=JAN- J A N T X & jantxv 1N3595 150 mA, S w itch in g ABSO LUTE MAXIMUM RATINGS, AT 25“C FEATURES Peak Reverse V o lta g e .125V Reverse Breakdown V o lt a g e .150V


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    1N3595 150mAdc 500mA 83Vdc 125Vdc 79Vdc 92Vdc 30Vdc 50mAdc 74Vdc IN3595 1N3595 PDF

    DSAIH0002567

    Abstract: No abstract text available
    Text: B K c oiI~lT~| livras international DaDODfls a _ Type N0.1N66A_ T-0/-*7 GOLD BONDED GERMANIUM DIODE 6 Lake Street PO Box 1436 Lawrence, MA 01841 Telephone 617 681-0392 TeleFax (617) 681-9135 Telex 928377 -4 BKC International Electronics Inc.


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    1N66A_ MIL-S-19500, DSAIH0002567 PDF

    LT 8233

    Abstract: diode LT 8233 4CM6 U891 L486 D029 U615
    Text: SEHITRON INDUSTRIES LT» f M3E D • 013700^ 00Q01t>3 ? « S L C B Á "T ' U f SERIES Hermetically Sealed Glass Packaged ■Surge Suppressor Diode Voltage Range 5V1 to 200 Volts ■ 1 Watt Steady State 400 Watt Peak Power APPLICATIONS ELECTRICAL CHARACTERISTICS


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    00001t3 9305-F-078 lead-171 LT 8233 diode LT 8233 4CM6 U891 L486 D029 U615 PDF

    Untitled

    Abstract: No abstract text available
    Text: SEHITRON INDUSTRIES LT» f M3E D • 013700^ 00Q01t>3 ? « S L C B Á "T ' U f SERIES Hermetically Sealed Glass Packaged ■Surge Suppressor Diode Voltage Range 5V1 to 200 Volts ■ 1 Watt Steady State 400 Watt Peak Power APPLICATIONS ELECTRICAL CHARACTERISTICS


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    00Q01t 9305-F-078 DO-35 DO-41 DO-15 DO-201AD PDF

    BZY95C12

    Abstract: in152 BZY95-C12 BZY95-C51 BZY95C22 BZY96C5V1 BZY96C6V2 BZY96-C6V8 BZY95-C24 BZY95C24
    Text: SEMITRON INDUSTRIES LT» 43E D • &137 &&^ OOOOISI O B S L C B BZY9S/BZY96/Z2 SERIES Hermetically Sealed Metal Package ■Voltage Regulator Diode Released to BS/CECC 9305-F082 ■Voltage Range 3.0 to 400 Volts 1.5 Watt Steady State ■400 Watt Peak Power


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    BZY9S/BZY96/Z2 9305-F082 9305-F-082 DO-35 DO-35 DO-41 DO-15 DO-201AD BZY95C12 in152 BZY95-C12 BZY95-C51 BZY95C22 BZY96C5V1 BZY96C6V2 BZY96-C6V8 BZY95-C24 BZY95C24 PDF

    TIC 44 SCR

    Abstract: SCR TIC 44 MTO thyristor unial
    Text: MITEL MP02 XXX 175 Series Phase Control Dual SCR, SCR/Diode Modules SEMICONDUCTOR Supersedes Septem ber 1992 version, 2.2 DS4477-3.0 Decem ber 1998 FEATURES • ■ ■ ■ ■ KEY PARAMETERS VDRM 1600V 'ts m 6800A lT AV (per arm) 175A Visol 2500V Dual Device M odule


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    DS4477-3 TIC 44 SCR SCR TIC 44 MTO thyristor unial PDF

    D0201AD

    Abstract: No abstract text available
    Text: ¡LITE-ON INC ra ijj L 31E D 5531^7 0ÜG1ÔS4 *4 I LT N GaAs T-13/4 MODIFIED 1 ' LEA 50 INFRARED EMITTING DIODE LT E-2871/2871C FEATU RES • S E L E C T E D TO S P E C IF IC O N -L IN E IN T E N S IT Y A N D R A D IA N T IN T E N S IT Y . • LOW COST. • N A R R O W B EA M .


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    S53b3k T-13/4 LTE-2871/2871C LTE-2871 D0-41and D0-41L 201AD 553b3b7 D0201AD PDF

    LT 485 SO8

    Abstract: LCDA15C-6
    Text: ^ g F IW •py lT F Q H Preliminary - April 10, 1998 400 Watt TVS Diode Array For Multi-Mode Transceiver Protection T E L805-498-2111 FAX:805-498-3804 W EB:http://www.semtech.com DESCRIPTION FEATURES The LCDA15C-6 has been specifically designed to protect sensitive components which are connected to


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    LCDA15C-6 L805-498-2111 LCDA15C-6 8/20ps) 12x16 LT 485 SO8 PDF

    MB11A02

    Abstract: cd7212 Thyristor Modules CD771 thyristor tt 142 n 12 powerex ME30 powerex ME20 powerex ME10 thyristor tt 18 n 800 thyristor TT 18 N 1200
    Text: 7294621 POWE RE X INC TI DE | TaTMbai ODDlflET 5 2,_? Thyristor and Diode Modules GTO Thyristor Modules ITGQ lT AV Tc (Am ps) (Amps) (°C) Vdrm (Volts) (Volts) tq fosee) (Volts) d i/d t (A/fjsec) (mA) 100 20 60 1200 15 8.0 1.5 200 400 GDM1/GDM2 GDM1/GDM21210


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    GDM1/GDM21210 GDM1/GDM21220 GDM-1210 GDM-1220 MAX/10 MB11A02 cd7212 Thyristor Modules CD771 thyristor tt 142 n 12 powerex ME30 powerex ME20 powerex ME10 thyristor tt 18 n 800 thyristor TT 18 N 1200 PDF

    JU003

    Abstract: No abstract text available
    Text: ETK81-O5O 50a S ± / < 7 — POWER TRANSISTOR MODULE I f ô ii : : Features ij ' s r y i * - K r t s * 7 'j- s iw High DC Current Gain • hFE*', S ' . ' • ífe ltífí Including Free Wheeling Diode Insulated Type : Applications • • AC AC M otor Controls


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    ETK81-O5O Ic680 JU003 PDF

    ITB68

    Abstract: No abstract text available
    Text: S E M IT R O N I N D U S T R I E S LT D 4 3E J> m B 137&&1 O O O O lb ? 4 E3 SLCB L7SERIES Hermetically Sealed Metal Packaged •Surge Suppressor Diode Voltage Range 5VI to 200 Volts 25 Watt Steady State ■1500 Watt Peak Power APPLICATIONS ELECTRICAL CHARACTERISTICS


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    9305-F-080 DO-35 DO-41 DO-15 DO-201AD ITB68 PDF

    transistor bel 100

    Abstract: transistor f151 B-429 30S3 F151 M606 transistor BC 2500
    Text: 6DI5OZ-12O 50a ‘ Outline Drawings POWER TRANSISTOR MODULE I 12 0 13 « I : F e a tu re s • S lt / E High Voltage • 7U— Krtilc • A S O ^ Ja I ' Including Free Wheeling Diode Excellent Safe Operating Area Insulated Type • A p p lic a tio n s 31


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    6DI5OZ-12O eST05835% 195t/R89) transistor bel 100 transistor f151 B-429 30S3 F151 M606 transistor BC 2500 PDF

    RF marking N02

    Abstract: MBD7000 BD7000 MMBD2836 MMBD2838 MMBD7000 SOT23 5 MARKING N02 Tj-12 m5c3
    Text: MM BD2836 / MM BD2838 M M B 1 7000 Surface Mount Switching Diode S W IT C H IN G D IO D E I00-200m A M P E R R E S 75-100 V O LT S Features: *Low Current Leakage *Low Forward Voltage ^Reverse Recover Time Trr<4ns *Small Outline Surface Mount SOT-23 Package


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    MMBD2836 MMBD2838 100-200m OT-23 OT-23 MMBD2838 BD7000 RF marking N02 MBD7000 BD7000 MMBD7000 SOT23 5 MARKING N02 Tj-12 m5c3 PDF

    DIODE 1N54

    Abstract: 1N54 DSAIH0002553
    Text: B ~ lT < n ÏN T t.R N A TIO N A L^ ' ÜBE D 1 1 7 ^ 0 3 □ □□G0L.7 t. | ~ Type No. 1N54 GOLD BONDED GERMANIUM DIODE 6 Lake Street PO Box 1436 Lawrence, MA 01841 Telephone 617 681-0392 TeleFax (617) 681-9135 Telex 928377 FEATURES Low forward voltage drop— low power consumption


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    MIL-S-19500, DIODE 1N54 1N54 DSAIH0002553 PDF