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    DIODE LT 0236 Search Results

    DIODE LT 0236 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE LT 0236 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: SEHITRON INDUSTRIES LT» f M3E D • 013700^ 00Q01t>3 ? « S L C B Á "T ' U f SERIES Hermetically Sealed Glass Packaged ■Surge Suppressor Diode Voltage Range 5V1 to 200 Volts ■ 1 Watt Steady State 400 Watt Peak Power APPLICATIONS ELECTRICAL CHARACTERISTICS


    OCR Scan     		00Q01t 9305-F-078 DO-35 DO-41 DO-15 DO-201AD PDF

    BZY95C12

    Abstract: in152 BZY95-C12 BZY95-C51 BZY95C22 BZY96C5V1 BZY96C6V2 BZY96-C6V8 BZY95-C24 BZY95C24
    Text: SEMITRON INDUSTRIES LT» 43E D • &137 &&^ OOOOISI O B S L C B BZY9S/BZY96/Z2 SERIES Hermetically Sealed Metal Package ■Voltage Regulator Diode Released to BS/CECC 9305-F082 ■Voltage Range 3.0 to 400 Volts 1.5 Watt Steady State ■400 Watt Peak Power


    OCR Scan     		BZY9S/BZY96/Z2 9305-F082 9305-F-082 DO-35 DO-35 DO-41 DO-15 DO-201AD BZY95C12 in152 BZY95-C12 BZY95-C51 BZY95C22 BZY96C5V1 BZY96C6V2 BZY96-C6V8 BZY95-C24 BZY95C24 PDF

    ITB68

    Abstract: No abstract text available
    Text: S E M IT R O N I N D U S T R I E S LT D 4 3E J> m B 137&&1 O O O O lb ? 4 E3 SLCB L7SERIES Hermetically Sealed Metal Packaged •Surge Suppressor Diode Voltage Range 5VI to 200 Volts 25 Watt Steady State ■1500 Watt Peak Power APPLICATIONS ELECTRICAL CHARACTERISTICS


    OCR Scan     		9305-F-080 DO-35 DO-41 DO-15 DO-201AD ITB68 PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEM ICONDUCTOR TECHNICAL DATA MMBV3102L v v c VOLTAGE VARIABLE CAPACITANCE DIODE 22 pF Nominal 30 V O LT S SILICON EPICAP DIODE . . . d e s ig n e d in th e S u r f a c e M o u n t p a c k a g e fo r g e n e r a l fr e q u e n c y c o n t r o l a n d t u n in g a p p lic a t io n s ; p r o v id in g s o lid - s t a t e r e lia b ilit y


    OCR Scan     		MMBV3102L PDF

    Diode LT 9250

    Abstract: diode BYW 92 LT 9250 diode lt 0236 5 amp diode byw 92-200 diode BYW 92-200 diodes byw 92 diodes byw diode BYW 19
    Text: S G S- TH OM SO N O STC D 1 7121237 00G2252 BYW 92-50^200, R BYW 92-150 A f (R) T H O M S O N -C S F D M S IO N SEM ICONDUCTEURS DISCRETS SUPERSWITCH HIGH EFFICIENCY FAST RECOVERY RECTIFIERS REDRESSEURS RAPIDES A H A U T RENDEMENT 59C 02252 HIGH EFFICIENCY


    OCR Scan     		00G2252 CB-425) CB-262) CB-262 CB-19) CB-428) CB-244 Diode LT 9250 diode BYW 92 LT 9250 diode lt 0236 5 amp diode byw 92-200 diode BYW 92-200 diodes byw 92 diodes byw diode BYW 19 PDF

    j329

    Abstract: transistor sb 772 TRANSISTOR b 772 p jft 1411 2SJ329 GI 242 F108 diode diode lt 0236 F108 NEC 2415
    Text: M 0 S J F ^ f M ^ / \ Or7 - M O S FET M O S Field Effect P ow er Transistor P ^ ^ t ^ l / / \ o7 - M 0 S I 2 S J 3 2 9 Ü P ? + ^ ;U / \ “ 7 - M 0 S F E T Ü F E T T * < X - f 'y ^ > ^ Î $ 1 4 * ^ # n T Î 3 U , ;& Î l 7 7^ 5 l i L X - ^ X -f y ^ i » D C - D C = l > / < - $ IC ftilT '- fo


    OCR Scan     		PDF

    r460 FET

    Abstract: tt 6222-1 2SK786 tt 6222 TC-6222 transistor GR 346 L0623 IR 8115 N0245 3e tRANSISTOR
    Text: MOS y<T7 — N MOS Field Effect P ow er Transistor FET I i f f l > YJP ^ - M O S F E T 2SK786 Ü, N T * > & & & f g < , x 4 -y f - > ¿ X T is ' , i S i f J i f c x 4 D C - D C 3 > '< - ? l z M M T t o # i t O V d s s = 900 V , Id do = 3 O fg jtX ^ 7 ? t o


    OCR Scan     		2SK786 32-fS 27l-tt 29-JtftW 354-fi 26-Sli r460 FET tt 6222-1 2SK786 tt 6222 TC-6222 transistor GR 346 L0623 IR 8115 N0245 3e tRANSISTOR PDF

    TC-8008

    Abstract: 2SJ355 xz43
    Text: 7 s— 9 • 3/ - h NEC M O S ^ f ^ Jü K 7 > V * ^ M O S Field Effect Transistor 2SJ355 4 ^ 1/ M O S FET a s ja s s iiP ^ + ^ -M s m /io s f e t z \ * 1C <t 5 ¡ S i g i g l i if s m è & ' X Y -y * > f m * - ? t * Ü P ° P B + > g f i L * rf i < ü t è : mm)


    OCR Scan     		2SJ355 2sj355tip51-p^ iei-620) TC-8008 2SJ355 xz43 PDF

    2SJ197

    Abstract: No abstract text available
    Text: •7s— S • 5 / — h- NEC ^ MOS M O S Field E ffe c t T ran sis to r 2SJ197 MOS F E T 2SJ197 l i , P f t * V W & MOS F E T T", 5 & ± \ \ z i IC CO ^ - {È • mm) y f- > z i i t - t o h ^ MOS F E T Ü 5}- > m iifr 'i& < , x ^ y f > ^"#14 & i à t l X


    OCR Scan     		2SJ197 2SJ197 O2SK1483 PDF

    diode lt 0236

    Abstract: thomson 237 DT 2 SiC IPM 237 thomson
    Text: S G S— THOMSON *\ 5TC 0 I _ ¿> ï- ^ 3 59C 0 2 3 31 _ D ” O T H O M S O N -C S F DIVISION SEMICONDUCTEURS . Ü0QE3317 ESM 4116 FAST RECOVERY RECTIFIER DIODE DIODE DE REDRESSEMENT RAPIDE Fe a tu r e s Soft recovery w ith lo w recovery charge. Fully characterised for operation up to 20 kHz,


    OCR Scan     		0QE3317 CB-425) CB-262) CB-262 CB-19) CB-428) CB-244 diode lt 0236 thomson 237 DT 2 SiC IPM 237 thomson PDF

    UPA64H

    Abstract: PA64H IRZ 46 T108 diode 476 k upa64 8 pin ic 3773
    Text: NEC m =t=fi\rx Aa Di ode Ar r ay //PA64H i t K 7 K Silicon Epitaxial Diode A rray High Speed Switching aîPA64Hi±, 7 / - SIP ' r - ' J > ) •> K * i i ü ï ü X 'f f l ^ H / P A C K A G E D IM E N S IO N S tc, (U nit : mm) (em?) -y V t„ ¡^ S / F E A T U R E S


    OCR Scan     		uPA64H PA64Hi± UPA64H PA64H IRZ 46 T108 diode 476 k upa64 8 pin ic 3773 PDF

    2SK1149

    Abstract: transistor sb 772
    Text: Mos M O S Field Effect Pow er Transistor 2SK1149 N — l ' / ' r7 X 'f -y 9 - T . m 2SK1149 i, N - f - r * iz X & M O F E T > m MOS F E T T”, 5 V « i l * IC ¿Diti ¡ t S f g g j ^ - S T t È ^ it a x : mm 7 l f f t o i ' S i ^ ' i 7 f >J î ! * W D C - D C


    OCR Scan     		2SK1149 2SK1149 transistor sb 772 PDF

    f650

    Abstract: UPA54H DIODE GOC 63 411K PA54H diode 3L DIODE T420 LT 745 S t802 t514
    Text: NEC j m + T / v r x K 7 K Diode A rra y A u X l f * * v T ; u ^ v U K 7 P A 5 4 H K K & Ä X - T ^ V ^ J S Silicon Epitaxial Diode Array High Speed Switching / ¿ P A 54H f ± , v S IP fc, # '/ — K Ä S Ä iS X ^ IJ y y ? *• - K 7 W (6 * ^ -) « • » H / P A C K A G E D IM EN SIO N S


    OCR Scan     		PA54H PA54HiiN 19-5MAX. -1611t -5611t Sifi-27 f650 UPA54H DIODE GOC 63 411K PA54H diode 3L DIODE T420 LT 745 S t802 t514 PDF

    TC-7606

    Abstract: 2SK1283
    Text: M O S Field Effect Pow er Transistor 2SK1283 7 /< 2SK 1283 fi, F E T T , N > 5 V m i l 1? ; * I C X 4 7 f > FET K f f p '- 'V — M O S K x 6 X T to i& ir y f& ÏA T , y i / / 0 ft -M O S ', x ^ y f -> y m t b t z ls b , i - > y°ff m ï\n z- g kïà T to


    OCR Scan     		2SK1283 2SK1283 TC-7606 PDF

    Untitled

    Abstract: No abstract text available
    Text: s G S —THOMSON S IC I D • 7 C12,:1237 0 0 0 2 3 2 3 ' 7 59C 02 323 O D T-03 -A.I ESM 245-50, R ESM 245-1000, (R) T H O M S O N -C S F DIVISION SEMICONDUCTEURS DISCRETS SUPERSWITCH FAST RECOVERY RECTIFIER OIOOES DIODES DE REDRESSEMENT RAPIDES HIGH VOLTAGE


    OCR Scan     		CB-262 CB-262) CB-19) CB-428) CB-244 PDF

    aval

    Abstract: No abstract text available
    Text: S G S^C S —T H O M S O N O T H O M S O N -C S F B V D W DIVISION SEMICONDUCTEURS DISCRETS 7 C12C1 2 3 7 t 7 5 _ B . Y — G G G E E IG 2 _ _ _ _ W 7 1 5 A HIGH EFFICIENCY FAST RECOVERY RECTIFIERS SUPERSWITCH REDRESSEURS RAPIDES A H A U T RENDEMENT


    OCR Scan     		CB-425) CB-262) CB-262 CB-19) CB-428) CB-244 aval PDF

    BF195 equivalent

    Abstract: bf197 2N3680 BF173 transistor bf 175 BC413 BFY39 BF256 transistor bf194 ke4416
    Text: Introduction This is N ational S em iconducto r's latest handbook on discrete sem i­ co nd u ctor devices. Y o u w ill notice th at the co m p any has added more than 350 transistor part numbers and three p ro d u ct fam ilies since pub lication o f the last handbook in 1971. M any o f these new products


    OCR Scan     		PDF

    2SK1132

    Abstract: TRANSISTOR DG S-10 ifr 641 2SJ165 TC-7517B
    Text: MO M O S Field Effect Transistor MOS F E T 2SJ165 {i P • mm F E T T & 9, Ü X >f -y f - > ^ " r 'X ^ f X h L T H i t T - t c # tc , ± 0 :2 J V T R ^ ^ - f 'V F7 > y X ^ => 6‘ • x - i17 f £ - H i â ' C i '0 4-*•■■ < £> & o m 0.42 z s o & A ti4


    OCR Scan     		2SJ165 2SK1132 TRANSISTOR DG S-10 ifr 641 2SJ165 TC-7517B PDF

    Resistor MSB 124

    Abstract: RK738 RK 0313 asea resistor 5245 Resistor MSB 54 RRMH ASEA Rod Resistors asea pin terminal asea time-lag relay RI RRMH
    Text: Catalogue RK 7 8 -2 E RELAY COM PONENTS STUD-TYPE RTLF stud-type diode, p. 1 RTNK sho rt-circuitin g com p orten , p. 2 MRB, MSB stud-type resistors, pages 2, 3 MSTA, MSTB therm istors, p. 4 Accessories, p. 5 Plug-in type relay com ponents, oil-fille d capa­


    OCR Scan     		APPAR11 Resistor MSB 124 RK738 RK 0313 asea resistor 5245 Resistor MSB 54 RRMH ASEA Rod Resistors asea pin terminal asea time-lag relay RI RRMH PDF

    LP 8029 L4

    Abstract: Mosfet T460 LP 8029 m4 FTR 03-E T460 mosfet transistor dk qq diode F4 3J mosfet n channel k 946 diode U1J 2SK2410
    Text: M O S ffiB W xÜ I^M O S FET M O S Field Effect T ran sisto r 2SK2410 -V -M O S F E T m U M Ì : m m 2 S K 2 4 1 0 IÎN ^ t? ^ H ÎÉ M ^ 7 -M O S F E T T ', 10.0 ± 0.3 4.5 ± 0.2 3.2 ± 0.2 7 W :M R 1 î ê I ‘- i Ê ' Æ 2.7 ± 0.2 o ~ C $ ~ r ft en


    OCR Scan     		2SK2410 2SK2410 LP 8029 L4 Mosfet T460 LP 8029 m4 FTR 03-E T460 mosfet transistor dk qq diode F4 3J mosfet n channel k 946 diode U1J PDF

    Zener Diode LT 432

    Abstract: 476 10k 524 L6ss Semitron Industries lt 332 diode L1117-5 L8824 L6B11 L6B12 L6B16
    Text: SEMITRON INDUSTRIES LTD 43E D ôlSTfla^ OOOOlbS 0 B S L C B - r- u -z> SERIES Hermetically Sealed Metal Packaged •Surge Suppressor Diode Voltage Range 5V1 to 200 Volts 75 Watt Steady State ■ 5 KWatt Peak Power APPLICATIONS ELECTRICAL CHARACTERISTICS ■ A range of high power zener and avalanche surge


    OCR Scan     		9305-F-081 ma0-201AD T0-236/S0T-23 DO-35 DO-35 DO-41 DO-15 DO-201AD Zener Diode LT 432 476 10k 524 L6ss Semitron Industries lt 332 diode L1117-5 L8824 L6B11 L6B12 L6B16 PDF

    jft 1411

    Abstract: c947 100 N31 transistor mur 641 M 9619 2SK2109 transistor 9619 nec 7824 ki 30 if 35acr
    Text: K ^ > V J* # MOS Field Effect Transistor 2SK2109 MOS FET 5 £ X < m m 2S K 2 1 0 9 & N 3 1 * *;U « É M O S F E T ? * U , 5 hiz J: 6 ¡t& ÏE S b jF n Jfë fc X < -y ^ > moL :mm ? m T ? to 1.5 ±0.1 <D77 ? ? j . J L - $ m W t f P , D C /D C = ] > / * - £ £ £ i : : j l i S ' ? f o


    OCR Scan     		2SK2109 2SK2109 TC-7983A 484Sife jft 1411 c947 100 N31 transistor mur 641 M 9619 transistor 9619 nec 7824 ki 30 if 35acr PDF

    2SK830

    Abstract: je 243 26-JS STB-26 JE 170 B0952 JEX9 4h4 1 JE 33 TL08 015
    Text: M N f t ^ l " / < 7 j i m - M O S O S F > 7 W -H ft ^ k ìlX f f iii h 'O , E E f f e c t P o w e r T r a n s is t o r T m 2SK830li, N f - t - T ' ^ - x y ^ x / y l - i ^ - M O S F E T T * F ie ld ¡t jJlìÈ X fl-M ¥ i i : ram -i DC-DC 3 m m ° V DSS=500 V, ID(DC)= ± 1 5 A


    OCR Scan     		2SK830 2SK830 je 243 26-JS STB-26 JE 170 B0952 JEX9 4h4 1 JE 33 TL08 015 PDF

    TC-7986A

    Abstract: 2SK2112 CMS01 7986A diode lt 0236
    Text: zr — *5? N E h ^ > v ^ 3* MOS Field Effect Transistor r j C • :> — h 2 S K 2 1 1 2 MOS FET 2 S K 2 1 1 2 IÎN 3 1 + * ; H Ë M O S F E J T & U , * C ct 5 ¡ t g E K ^ g l * * -f -y T 't o * < - y * > 7 ìS j£ f c jÌt 'f c « > , C D r ^ ^ iX - ^ llE S i ^ ,


    OCR Scan     		2SK2112 oeTi14 a-Ti4S24# TC-7986A CMS01 7986A diode lt 0236 PDF