Untitled
Abstract: No abstract text available
Text: Æ T SGS-THOMSON n0MilU10TI3 [fflnei STTB506B -TR TURBOSWITCH ”B” . ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS I f (a v ) 5A V rrm 600 V Vf trr (max) 1.3 V (typ) 45 ns P R ELIM IN ARY DATASHEET FEATURES AND BENEFITS • SPECIFIC TO THE FOLLOWING OPERATIONS:
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n0MilU10TI3Â
STTB506B
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification PowerMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Automotive applications, Switched
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BUK545-60H
OT186
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PDF
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45n80c
Abstract: 800 coolmos
Text: IXKN 45N80C CoolMOS Power MOSFET VDSS = 800 V ID25 = 44 A RDS on max = 74 mΩ N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET miniBLOC, SOT-227 B D S G G S E72873 S G = Gate S = Source D = Drain S D Either source terminal at miniBLOC can be used as main or Kelvin Source
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45N80C
OT-227
E72873
OT-227
45n80c
800 coolmos
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Untitled
Abstract: No abstract text available
Text: bbS3=l31 0030475 4 SSE D N AMER PHI LIP S/DISCRETE BUK454-600A BUK454-600B PowerMOS transistor T - 37 - 1 1 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies
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BUK454-600A
BUK454-600B
BUK454
-600A
-600B
T-39-n
IE-04
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PDF
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45n80c
Abstract: E72873 IXKN45N80C
Text: IXKN 45N80C CoolMOS 1 Power MOSFET VDSS = 800 V ID25 = 44 A RDS on) max = 74 mΩ N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET miniBLOC, SOT-227 B D S G G S E72873 S G = Gate S = Source D = Drain S D Either source terminal at miniBLOC can be used
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Original
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45N80C
OT-227
E72873
20080526a
45n80c
E72873
IXKN45N80C
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PDF
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fast diode SOT-227
Abstract: No abstract text available
Text: IXKN 45N80C COOLMOS * Power MOSFET VDSS = 800 V ID25 = 44 A RDS on max = 74 mΩ N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET miniBLOC, SOT-227 B D S G G S E72873 S G = Gate S = Source D = Drain S D Either source terminal at miniBLOC can be used
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Original
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45N80C
OT-227
E72873
OT-227
fast diode SOT-227
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PDF
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Untitled
Abstract: No abstract text available
Text: IXKN 45N80C CoolMOS 1 Power MOSFET VDSS = 800 V ID25 = 44 A RDS on) max = 74 m N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET D miniBLOC, SOT-227 B S G G S E72873 S G = Gate S = Source D = Drain S D Either source terminal at miniBLOC can be used
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Original
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45N80C
OT-227
E72873
20080526a
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PDF
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Untitled
Abstract: No abstract text available
Text: Æ T SGS-THOMSON noœiiuioTi^oifflnei STTB306B -TR TURBOSWITCH ”B” . ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS I f (a v ) 3A V rrm 600 V Vf trr (max) 1.3 V (typ) 45 ns P R ELIM IN ARY DATASHEET FEATURES AND BENEFITS • SPECIFIC TO THE FOLLOWING OPERATIONS:
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STTB306B
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PDF
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tlo82
Abstract: TLO82 datasheet lm147 lm117 3.3V JM38510/10901BGA TLO82 application lm723 LM338 model SPICE LM723 pin details lm842
Text: Worldwide Sales Offices Linear/Mixed-Signal Designer’s Guide Winter 2002 FRANCE ITALY PRC SWEDEN National Semicondutores da América do Sul Ltda. World Trade Center Av. das Nações Unidas, 12.551 22nd Floor - cj. 2207 04578-903 Brooklyn São Paulo, SP Brasil
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I-20089
tlo82
TLO82 datasheet
lm147
lm117 3.3V
JM38510/10901BGA
TLO82 application
lm723
LM338 model SPICE
LM723 pin details
lm842
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PDF
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e25 ferrite core
Abstract: MAGNETICA 1338.0019 AN2950 MAGNETICA TRANSFORMER 1338.0019 electronic watt-meter circuit diagrams magnetica PC817 OPTOCOUPLER SHARP working of ic 8038 VIPER28 application notes digital wattmeter circuit
Text: AN2950 Application note EVLVIPER28L-10W: 5 V/10 W, 60 kHz isolated flyback with extra power management Introduction This document describes a 5 V, 2 A application with 3.3 A peak current capability of 1.9 sec, using VIPer28, a new offline high-voltage converter from STMicroelectronics.
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AN2950
EVLVIPER28L-10W:
VIPer28,
e25 ferrite core
MAGNETICA 1338.0019
AN2950
MAGNETICA TRANSFORMER 1338.0019
electronic watt-meter circuit diagrams
magnetica
PC817 OPTOCOUPLER SHARP
working of ic 8038
VIPER28 application notes
digital wattmeter circuit
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PDF
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M7 diode vishay
Abstract: No abstract text available
Text: 100MT060WDF www.vishay.com Vishay Semiconductors Primary MTP IGBT Power Module FEATURES • Buck PFC stage with warp 2 IGBT and FRED Pt hyperfast diode • Integrated thermistor • Isolated baseplate • Compliant to RoHS Directive 2002/95/EC • Very low stray inductance design for high speed operation
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100MT060WDF
2002/95/EC
11-Mar-11
M7 diode vishay
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Untitled
Abstract: No abstract text available
Text: VS-100MT060WDF www.vishay.com Vishay Semiconductors Primary MTP IGBT Power Module FEATURES • Buck PFC stage with warp 2 IGBT and FRED Pt hyperfast diode • Integrated thermistor • Isolated baseplate • Very low stray inductance design for high speed operation
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VS-100MT060WDF
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: VS-100MT060WDF www.vishay.com Vishay Semiconductors Primary MTP IGBT Power Module FEATURES • Buck PFC stage with warp 2 IGBT and FRED Pt hyperfast diode • Integrated thermistor • Isolated baseplate • Compliant to RoHS Directive 2011/65/EU • Very low stray inductance design for high speed operation
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Original
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VS-100MT060WDF
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: VS-100MT060WDF www.vishay.com Vishay Semiconductors Primary MTP IGBT Power Module FEATURES • Buck PFC stage with warp 2 IGBT and FRED Pt hyperfast diode • Integrated thermistor • Isolated baseplate • Very low stray inductance design for high speed operation
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Original
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VS-100MT060WDF
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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X4612
Abstract: No abstract text available
Text: 100MT060WDF www.vishay.com Vishay Semiconductors Primary MTP IGBT Power Module FEATURES • Buck PFC stage with warp 2 IGBT and FRED Pt hyperfast diode • Integrated thermistor • Isolated baseplate • Compliant to RoHS Directive 2002/95/EC • Very low stray inductance design for high speed operation
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Original
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100MT060WDF
2002/95/EC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
X4612
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PDF
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Untitled
Abstract: No abstract text available
Text: 70MT060WSP www.vishay.com Vishay Semiconductors MTP IGBT Power Module Primary Rectifier and PFC FEATURES • Input rectifier bridge • PFC stage with warp 2 IGBT and FRED Pt hyperfast diode • Very low stray inductance design for high speed operation • Integrated thermistor
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Original
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70MT060WSP
2002/95/EC
11-Mar-11
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PDF
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Untitled
Abstract: No abstract text available
Text: 70MT060WSP www.vishay.com Vishay Semiconductors MTP IGBT Power Module Primary Rectifier and PFC FEATURES • Input rectifier bridge • PFC stage with warp 2 IGBT and FRED Pt hyperfast diode • Very low stray inductance design for high speed operation • Higher switching frequency up to 150 kHz
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70MT060WSP
E78996
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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vs-150mt060wdf
Abstract: No abstract text available
Text: VS-150MT060WDF www.vishay.com Vishay Semiconductors MTP IGBT Power Module Primary Dual Forward FEATURES • Buck PFC stage with warp 3 IGBT and FRED Pt hyperfast diode • Integrated thermistor • Isolated baseplate • Very low stray inductance design for high speed operation
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VS-150MT060WDF
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
vs-150mt060wdf
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PDF
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70MT060WSP
Abstract: maximum non-repetitive peak current
Text: 70MT060WSP www.vishay.com Vishay Semiconductors MTP IGBT Power Module Primary Rectifier and PFC FEATURES • Input rectifier bridge • PFC stage with warp 2 IGBT and FRED Pt hyperfast diode • Very low stray inductance design for high speed operation • Integrated thermistor
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Original
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70MT060WSP
2002/95/EC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
70MT060WSP
maximum non-repetitive peak current
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PDF
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VS-40MT060WFHT
Abstract: 01100-T
Text: VS-40MT060WFHT www.vishay.com Vishay Semiconductors Full Bridge IGBT and MOSFET MTP Power Module FEATURES • Generation 4 warp speed IGBT and power MOSFET technology • HEXFRED antiparallel diodes with ultrasoft reverse recovery • Very low conduction and switching losses
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Original
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VS-40MT060WFHT
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
VS-40MT060WFHT
01100-T
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PDF
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Untitled
Abstract: No abstract text available
Text: VS-70MT060WSP www.vishay.com Vishay Semiconductors MTP IGBT Power Module Primary Rectifier and PFC FEATURES • Input rectifier bridge • PFC stage with warp 2 IGBT and FRED Pt hyperfast diode • Very low stray inductance design for high speed operation
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Original
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VS-70MT060WSP
E78996
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: VS-70MT060WSP www.vishay.com Vishay Semiconductors MTP IGBT Power Module Primary Rectifier and PFC FEATURES • Input rectifier bridge • PFC stage with warp 2 IGBT and FRED Pt hyperfast diode • Very low stray inductance design for high speed operation
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Original
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VS-70MT060WSP
E78996
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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CNW136
Abstract: Optocoupler 601 pulse transformer 4502 BS415 BS6301 BS7002 CNW135 CNW4502 MC8365
Text: P H ILIP S INTERNATIONAL HIE D • 7110ß2b 003Q4ba T MPHIN T - V Philips Semiconductors _ Product specification Wide body, high isolation, high-speed optocouplers FEATURES • Wide body DIL encapsulation, with a pin distance of 10.16 mm
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711002b
003G4bÃ
CNW135/CNW136/CNW4502
CNW136
Optocoupler 601
pulse transformer 4502
BS415
BS6301
BS7002
CNW135
CNW4502
MC8365
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PDF
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vs-100mt060wsp
Abstract: No abstract text available
Text: VS-100MT060WSP www.vishay.com Vishay Semiconductors MTP IGBT Power Module Primary Rectifier and PFC FEATURES • Input rectifier bridge • PFC stage with warp 2 IGBT and FRED Pt hyperfast diode • Very low stray inductance design for high speed operation
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Original
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VS-100MT060WSP
E78996
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
vs-100mt060wsp
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PDF
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