DPG10I300PA
Abstract: No abstract text available
Text: DPG 10 IM 300 UC advanced V RRM = I FAV = t rr = HiPerFRED High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 300 V 10 A 35 ns Part number DPG 10 IM 300 UC 1 3 2 Marking on Product: PAOGUI Backside: cathode Features / Advantages:
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Untitled
Abstract: No abstract text available
Text: DSA 10 I 100PM advanced V RRM = I FAV = VF = Schottky High Performance Schottky Diode Low Loss and Soft Recovery Single Diode Part number 100 V 10 A 0.72 V Marking on product DSA 10 I 100PM 1 3 Features / Advantages: Applications: ● Very low Vf ● Extremely low switching losses
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100PM
O-220FPAC
60747and
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03866
Abstract: 07062
Text: DPG 10 IM 300 UC V RRM = I FAV = t rr = HiPerFRED² High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 300 V 10 A 35 ns Part number DPG 10 IM 300 UC 1 2 3 Marking on Product: PAOGUI Backside: cathode Features / Advantages: Applications:
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60747and
20090323a
03866
07062
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DPG10I300PA
Abstract: dpak DIODE ANODE COMMON
Text: DPG 10 IM 300 UC V RRM = I FAV = t rr = HiPerFRED² High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 300 V 10 A 35 ns Part number DPG 10 IM 300 UC 1 2 3 Marking on Product: PAOGUI Backside: cathode Features / Advantages: Applications:
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60747and
20090323a
DPG10I300PA
dpak DIODE ANODE COMMON
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Untitled
Abstract: No abstract text available
Text: DFE 10 I 600PM advanced 600 V 10 A 35 ns V RRM = I FAV = t rr = FRED Fast Recovery Diode Low Loss and Soft Recovery Single Diode Part number Marking on product 3 1 Backside: isolated Features / Advantages: Applications: Planar passivated chips Llow leakage current
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600PM
60747and
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DPG10I300PA
Abstract: No abstract text available
Text: DPG 10 IM 300 UC V RRM = I FAV = t rr = HiPerFRED² High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 300 V 10 A 35 ns Part number 1 2 3 Marking on Product: PAOGUI Backside: cathode Features / Advantages: Package: Applications: Planar passivated chips
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DPG10I300PA
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BAS16
Abstract: BAS16D
Text: BAS16D VISHAY Vishay Semiconductors Small Signal Diodes Features • Silicon Epitaxial Planar Diode • Fast switching diode • Also available in case SOT-23 with designation BAS16 Mechanical Data Case: SOD-123 Plastic Case Weight: approx.10 mg Marking: A6
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BAS16D
OT-23
BAS16
OD-123
D3/10
D-74025
13-Jun-03
BAS16
BAS16D
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GSM1900
Abstract: CA141 SWITCHPLEXER GSM1800 CA142 GSM900 LMSP54CA-141 LMSP54CA-142 GSM-1900 GSM900 murata
Text: Microwave Components RF Diode Switches 1.0±0.1 0.20±0.15 LMSP54CA-141 A : Pin 1 Marking 1.0±0.1 0.25±0.15 LMSP54CA-142 A : Pin 1 Marking 6 (11)(10) (9) (8) (7) 0.8±0.2 (1) : GSM1800 Rx (2) : Vc (GSM1900 Rx) (3) : GSM1900 Rx (4) : Vc (GSM1800/1900 Tx)
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LMSP54CA-141
LMSP54CA-142
GSM1800
GSM1900
GSM1800/1900
GSM900
CA141
SWITCHPLEXER
CA142
LMSP54CA-141
LMSP54CA-142
GSM-1900
GSM900 murata
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diode marking e41
Abstract: E41-15 diode 3A 1500V 1500V 3A diode
Text: ERE41-15 3A (1500V / 3A ) Outline drawings, mm FAST RECOVERY DIODE ø 7.5 ø 1.8 10 25 MIN. 25 MIN. Features Damper diode for high definition T.V. and high resolution display Marking High voltage by mesa design Color code : White High reliability Applications
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ERE41-15
diode marking e41
E41-15
diode 3A 1500V
1500V 3A diode
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DPG10I300PA
Abstract: No abstract text available
Text: DPG10IM300UC HiPerFRED² VRRM = 300 V I FAV = 10 A t rr = 35 ns High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode Part number DPG10IM300UC Marking on Product: PAOGUI Backside: cathode 1 3 2/4 Features / Advantages: Applications:
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DPG10IM300UC
O-252
60747and
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Comchip Technology
Abstract: CDA3S06-G SOT23 NE SS MARKING sot23 TOP marking sot23-6 20 sot23-6 esd diode network 16
Text: Diode Network / ESD Suppressor CDA3S06-G RoHS Device Voltage:10 Volts Current: 50 mA Package (SOT23-6) Feature Marking “ DN3 “ This diode network is designedto provide four channels for active termination of high-speed data signals to eliminate signal undershootand
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CDA3S06-G
OT23-6)
MDS0903002A
Comchip Technology
CDA3S06-G
SOT23 NE
SS MARKING sot23
TOP marking sot23-6
20 sot23-6 esd
diode network 16
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diode 1500V
Abstract: diode marking H2 mark h2 diode fast recovery diode 1500V diode marking e41 diode 3A 1500V
Text: ERE41-15 3A (1500V / 3A ) Outline drawings, mm FAST RECOVERY DIODE ø 7.5 ø 1.8 10 25 MIN. 25 MIN. Features Damper diode for high definition T.V. and high resolution display Marking High voltage by mesa design Color code : White High reliability Applications
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ERE41-15
diode 1500V
diode marking H2
mark h2 diode
fast recovery diode 1500V
diode marking e41
diode 3A 1500V
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Untitled
Abstract: No abstract text available
Text: DLA 10 IM 800 UC advanced V RRM = I FAV = VF = High Efficiency Standard Rectifier Single Diode 800 V 10 A 1.01 V Part number DLA 10 IM 800 UC 1 2 3 Marking on Product: MARLUI Backside: cathode Features / Advantages: Applications: Package: ● Planar passivated chips
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O-252
60747and
20070320a
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330 marking diode
Abstract: FLLD263 marking SOT23 V 4 diode NA MARKING SOT23 FLLD258 FLLD261 diode 100V 80 A IR 50 DSA003689 marking d63
Text: FLLD258 FLLD261 FLLD263 SOT23 SILICON PLANAR LOW LEAKAGE COMMON ANODE DIODE PAIR ISSUE 2 JANUARY 1996 FLLD263 ✪ DIODE PIN CONNECTION 1 2 1 TYPICAL CHARACTERISTICS 25 3 20 2 15 SOT23 PART MARKING DETAIL D63 10 5 3 ABSOLUTE MAXIMUM RATINGS. 20 40 60
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FLLD258
FLLD261
FLLD263
400mA
-200mA
330 marking diode
FLLD263
marking SOT23 V 4 diode
NA MARKING SOT23
FLLD258
FLLD261
diode 100V 80 A
IR 50
DSA003689
marking d63
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Untitled
Abstract: No abstract text available
Text: DLA 10 IM 800 UC advanced V RRM = I FAV = VF = High Efficiency Standard Rectifier Single Diode 800 V 10 A 1.01 V Part number 1 2 3 Marking on Product: MARLUI Backside: cathode Features / Advantages: Package: Applications: Planar passivated chips Very low leakage current
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O-252
60747and
20070320a
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BAT54
Abstract: No abstract text available
Text: BAT54 CDU SCHOTTKY BARRIER DIODE BAT54 single diode PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Marking B A T54 -4L 0 .1 4 -|p TÔ9 Pin configuration 1 = ANODE 2 = NC 3 = CATHODE -W ABSOLUTE MAXIMUM RATINGS Continuous reverse voltage Forward current Forward voltage at Ip = 10 mA
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BAT54
BAT54
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bat18 a2
Abstract: top marking c2 sot23 BAT18 BAT18-05 A2 SOT23 AUS SOT23 c2 sot23 BAT18-04 top marking 3c sot23 BAT18-04 sot23
Text: BAT18.BAT18-05 Silicon RF Switching Diode 3 Low-loss VHF / UHF switch above 10 MHz PIN diode with low forward resistance 2 1 BAT18 BAT18-05 BAT18-04 3 3 1 3 1 2 1 2 EHA07005 EHA07002 VPS05161 EHA07004 Type Marking Pin Configuration Package BAT18 A2s
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BAT18.
BAT18-05
BAT18
BAT18-04
EHA07005
EHA07002
VPS05161
EHA07004
bat18 a2
top marking c2 sot23
BAT18
BAT18-05
A2 SOT23
AUS SOT23
c2 sot23
BAT18-04
top marking 3c sot23
BAT18-04 sot23
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BAT378W
Abstract: No abstract text available
Text: BAT378W SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE 3 1 2 Marking Code: B7 Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Maximum Peak Reverse Voltage VRM 15 V Reverse Voltage VR 10 V Maximum Peak Forward Current IFM 200 mA Surge Forward Current (10 ms)
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BAT378W
Capaci125
BAT378W
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BAT378W
Abstract: MARKING CODE B7
Text: BAT378W SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE 3 1 2 Marking Code: B7 Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Maximum Peak Reverse Voltage VRM 15 V Reverse Voltage VR 10 V Maximum Peak Forward Current IFM 200 mA Surge Forward Current (10 ms)
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BAT378W
Capaci125
BAT378W
MARKING CODE B7
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Untitled
Abstract: No abstract text available
Text: SIEMENS Silicon Schottky Diode BAT 15-098 Preliminary Data • DBS mixer application to 10 GHz • Low noise figure • Low barrier type ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code Pin Configuration
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Q62702-A0062
OD-123
EHA07001
EHD07088
fl535bQ5
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A940
Abstract: a940 Transistor transistor a940 DIODE BAT Q62702-A940 BAT18 A938 A942 Q62702-A787 Q62702-A938
Text: BAT 18 Silicon RF Switching Diode BAT 18 … ● Low-loss VHF/UHF switch above 10 MHz ● Pin diode with low forward resistance Type Marking Ordering Code Pin Configuration Package1 BAT 18 A2 Q62702-A787 SOT 23 BAT 18-04 AU Q62702-A938 BAT 18-05 AS Q62702-A940
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Q62702-A787
Q62702-A938
Q62702-A940
Q62702-A942
A940
a940 Transistor
transistor a940
DIODE BAT
Q62702-A940
BAT18
A938
A942
Q62702-A787
Q62702-A938
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BY228
Abstract: diode SOD 64 BYW56 SOD-64 BYW56 V SOD57 diode v
Text: Marking on Rectifiers Vishay Semiconductors Standard Avalanche Sinterglass Diode V V BY228 BYW56 17208 17207 SOD-57 SOD-64 Fig. 1 - Document Number: 84085 Rev. 1.0, 26-Feb-10 Fig. 2 - For technical questions, contact: [email protected] www.vishay.com 1
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BY228
BYW56
OD-57
OD-64
26-Feb-10
BY228
diode SOD 64
BYW56
SOD-64
BYW56 V
SOD57
diode v
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Untitled
Abstract: No abstract text available
Text: MMSD4448 Small Signal Diode SOD123 Color Band Denotes Cathode Top Marking: 10 Absolute Maximum Ratings * T a Symbol = 25°C unless otherwise noted Parameter Value Unit VRRM Maximum Repetitive Reverse Voltage 100 V IF AV Average Rectified Forward Current 200
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MMSD4448
OD123
MMSD4448
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Untitled
Abstract: No abstract text available
Text: DLA10IM800UC High Efficiency Standard Rectifier VRRM = 800 V I FAV = 10 A VF = 1.16 V Single Diode Part number DLA10IM800UC Marking on Product: MARLUI Backside: cathode 1 3 2/4 Features / Advantages: Applications: Package: TO-252 DPak ● Planar passivated chips
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DLA10IM800UC
O-252
60747and
20130121b
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