30jl2c
Abstract: No abstract text available
Text: 30JL2C41 TOSHIBA TOSHIBA HIGH EFFICIENCY DIODE STACK HED 3fl I I IC SILICON EPITAXIAL TYPE 4 1 Unit in mm SWITCHING TYPE POWER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION 15.9 MAX. • • • 2 + 0.2 Vrrm = 600V Repetitive Peak Reverse Voltage Average Output Recifled Current
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30JL2C41
961001EAA2'
30jl2c
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30JL2C41
Abstract: toshiba diode 1A 30jl2c
Text: 30JL2C41 TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE 30JL2C41 Unit: mm SWITCHING MODE POWER SUPPLY APPLICATON CONVERTER & CHOPPER APPLICATION Repetitive Peak Reverse Voltage : VRRM = 600V Average Output Rectified Current : IO = 30A Ultra Fast Reverse-Recovery Time
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30JL2C41
30JL2C41
toshiba diode 1A
30jl2c
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Untitled
Abstract: No abstract text available
Text: 30JL2C41 TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE 30JL2C41 Unit: mm SWITCHING MODE POWER SUPPLY APPLICATON CONVERTER & CHOPPER APPLICATION l Repetitive Peak Reverse Voltage : VRRM = 600V l Average Output Rectified Current : IO = 30A
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30JL2C41
12-16D1A
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Untitled
Abstract: No abstract text available
Text: T O SH IB A 30JL2C41 TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE 30JL2C41 SWITCHING TYPE PO W ER SUPPLY APPLICATION U nit in mm CONVERTER & CHOPPER APPLICATION 15.9 M A X. • Repetitive Peak Reverse Voltage V r r m = 600V • A verage Output Recified Current
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30JL2C41
961001EAA2'
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kone
Abstract: 30JL2C41 OT63
Text: TOSHIBA 30JL2C41 TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE 30JL2C41 Unit in mm SWITCHING TYPE POWER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION 15.9 M A X. V r r m = 600V • Repetitive Peak Reverse Voltage IO = 30A • Average Output Reeified Current
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OCR Scan
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30JL2C41
961001EAA2'
kone
30JL2C41
OT63
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PDF
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Untitled
Abstract: No abstract text available
Text: 30JL2C41 TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE 30JL2C41 Unit: mm SWITCHING MODE POWER SUPPLY APPLICATON CONVERTER & CHOPPER APPLICATION Average Output Rectified Current : VRRM = 600 V : IO = 30 A Ultra Fast Reverse-Recovery Time
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30JL2C41
12-16D1A
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30JL2C
Abstract: toshiba a10 30JL2C41
Text: 30JL2C41 TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE 30JL2C41 Unit: mm SWITCHING MODE POWER SUPPLY APPLICATON CONVERTER & CHOPPER APPLICATION ! Repetitive Peak Reverse Voltage : VRRM = 600 V ! Average Output Rectified Current : IO = 30 A
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30JL2C41
30JL2C
toshiba a10
30JL2C41
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Untitled
Abstract: No abstract text available
Text: T O SH IB A 30JL2C41 TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE B0JL2C41 Unit in mm SWITCHING TYPE POWER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION SYMBOL Vr r m io If SM Tj Tstg RATING 600 30 150 (50Hz) 165 (60Hz) -4 0 -1 5 0
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30JL2C41
B0JL2C41
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Untitled
Abstract: No abstract text available
Text: 30JL2C41 TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE 30JL2C41 Unit: mm SWITCHING MODE POWER SUPPLY APPLICATON CONVERTER & CHOPPER APPLICATION z Average Output Rectified Current : VRRM = 600 V : IO = 30 A z Ultra Fast Reverse-Recovery Time
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30JL2C41
12-16D1A
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zener smd marking GA
Abstract: S6 SMD zener diode Zener diode smd marking 07 5DL2CZ smd schottky diode s6 CMS11 CMS19 CMG03 marking h01 rf semiconductors
Text: 2008-8 PRODUCT GUIDE Small and Medium Diodes s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g C O N T E N T S 1. Diode Product Tree 3 2. Key Features 4 3. New Small & Medium Diodes 5 4. Selection Guide 6 5. Symbols, Terms and Definitions
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BCE0001F
E-28831
BCE0001G
zener smd marking GA
S6 SMD zener diode
Zener diode smd marking 07
5DL2CZ
smd schottky diode s6
CMS11
CMS19
CMG03
marking h01
rf semiconductors
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30JL2C41
Abstract: No abstract text available
Text: 30JL2C41 TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE 30JL2C41 Unit: mm SWITCHING MODE POWER SUPPLY APPLICATON CONVERTER & CHOPPER APPLICATION z Repetitive Peak Reverse Voltage : VRRM = 600 V z Average Output Rectified Current : IO = 30 A
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30JL2C41
30JL2C41
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Untitled
Abstract: No abstract text available
Text: r n m COPYRIGHT ALL RIGHTS RESERVED. BT TCP CONNECTOR LID MECHANICAL: F KSCRPIBN Nm Am JC KZ 23APR2013 LOGO CHANGE NOTES: M A T ER IA LS: HOUSING - TH ERM O PLA STIC PET P O L Y E S T E R FL A M M A B IL IT Y RATING UL 9 t V -0 . SHIELD - .010" THICK, C26800 B R A S S P R E P L A T E D WITH 30jalNCH MIN SEM I-BRIG H T
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23APR2013
C26800
30jalNCH
100jxlNCH
MAG45
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Untitled
Abstract: No abstract text available
Text: PHASE WAVE 60Hz DERATING 1 –50 FORWARD CURVE AMBIENT 1FIG. 25TSINGLE 4 TEMPERATURE 75HALFCURRENT 10 100 20 ℃ 125 150 100 175 65V / 80A N-Channel Enhancement Mode MOSFET FIG. –2MAXIMUM 10 2SINGLE 5NON10 0.0 0.2 0.4 0.6 HY80N07T 65V, RDS(ON)=7.2mW@VGS=10V, ID=30A
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HY80N07T
O-220AB
2002/95/EC
O-220AB
250mA
125oC
-55oC
30-Jul-2012
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Untitled
Abstract: No abstract text available
Text: STPS15L30CDJF Low drop power Schottky rectifier Features • Very small conduction losses ■ Negligible switching losses ■ Extremely fast switching ■ Low forward voltage drop ■ Low thermal resistance ■ High avalanche capability specified A1 K A2 Description
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STPS15L30CDJF
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9307-1
Abstract: No abstract text available
Text: HFA16PB120 Vishay High Power Products HEXFRED Ultrafast Soft Recovery Diode, 16 A FEATURES • • • • • • Ultrafast recovery Ultrasoft recovery Very low IRRM Very low Qrr Specified at operating conditions Designed and qualified for industrial level
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HFA16PB120
HFA16PB120
18-Jul-08
9307-1
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HFA16PA120C
Abstract: IRFP250 16PA120
Text: HFA16PA120C Vishay High Power Products HEXFRED Ultrafast Soft Recovery Diode, 2 x 8 A FEATURES • • • • • • Base common cathode 2 Ultrafast recovery Ultrasoft recovery Very low IRRM Very low Qrr Specified at operating conditions Designed and qualified for industrial level
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HFA16PA120C
O-247AC
HFA16PA120C
18-Jul-08
IRFP250
16PA120
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HFA25PB60
Abstract: diode HFA25PB60 IRFP250
Text: HFA25PB60 Vishay High Power Products HEXFRED Ultrafast Soft Recovery Diode, 25 A FEATURES • • • • • • BENEFITS Cathode to base • • • • • 4 2 1 Cathode Ultrafast recovery Ultrasoft recovery Very low IRRM Very low Qrr Specified at operating conditions
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HFA25PB60
HFA25PB60
18-Jul-08
diode HFA25PB60
IRFP250
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HFA08PB120
Abstract: IRFP250 08PB120
Text: HFA08PB120 Vishay High Power Products HEXFRED Ultrafast Soft Recovery Diode, 8 A FEATURES • • • • • • Ultrafast recovery Ultrasoft recovery Very low IRRM Very low Qrr Specified at operating conditions Designed and qualified for industrial level
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HFA08PB120
HFA08PB120
18-Jul-08
IRFP250
08PB120
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Ultrafast recovery - 1200 V diode
Abstract: 93042 HFA08TB120 IRFP250
Text: HFA08TB120 Vishay High Power Products HEXFRED Ultrafast Soft Recovery Diode, 8 A FEATURES • • • • • • BENEFITS Base cathode 2 1 Cathode Ultrafast recovery Ultrasoft recovery Very low IRRM Very low Qrr Specified at operating conditions Designed and qualified for industrial level
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HFA08TB120
HFA08TB120
18-Jul-08
Ultrafast recovery - 1200 V diode
93042
IRFP250
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dt2 marking code
Abstract: No abstract text available
Text: HFA16PB120 Vishay High Power Products HEXFRED Ultrafast Soft Recovery Diode, 16 A FEATURES • • • • • • Ultrafast recovery Ultrasoft recovery Very low IRRM Very low Qrr Specified at operating conditions Designed and qualified for industrial level
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HFA16PB120
HFA16PB120
12-Mar-07
dt2 marking code
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HFA15TB60
Abstract: IR HFA15TB60 HFA15TB60-1 IRFP250
Text: HFA15TB60/HFA15TB60-1 Vishay High Power Products HEXFRED Ultrafast Soft Recovery Diode, 15 A FEATURES HFA15TB60 • • • • • • HFA15TB60-1 Ultrafast recovery Ultrasoft recovery Very low IRRM Very low Qrr Specified at operating conditions Designed and qualified for industrial level
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HFA15TB60/HFA15TB60-1
HFA15TB60
HFA15TB60-1
O-220AC
HFA15TB60
18-Jul-08
IR HFA15TB60
HFA15TB60-1
IRFP250
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HFA08TB60
Abstract: IRFP250
Text: HFA08TB60 Vishay High Power Products HEXFRED Ultrafast Soft Recovery Diode, 8 A FEATURES • • • • • • Base cathode 2 1 Cathode Ultrafast recovery Ultrasoft recovery Very low IRRM Very low Qrr Specified at operating conditions Designed and qualified for industrial level
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HFA08TB60
HFA08TB60
18-Jul-08
IRFP250
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HFA25TB60
Abstract: IRFP250
Text: HFA25TB60 Vishay High Power Products HEXFRED Ultrafast Soft Recovery Diode, 25 A FEATURES • • • • • • Base cathode 1 Cathode Ultrafast recovery Ultrasoft recovery Very low IRRM Very low Qrr Specified at operating conditions Designed and qualified for industrial level
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HFA25TB60
O-220AC
HFA25TB60
18-Jul-08
IRFP250
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PDF
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Untitled
Abstract: No abstract text available
Text: HFA08TB60 Vishay High Power Products HEXFRED Ultrafast Soft Recovery Diode, 8 A FEATURES • • • • • • Base cathode 2 1 Cathode Ultrafast recovery Ultrasoft recovery Very low IRRM Very low Qrr Specified at operating conditions Designed and qualified for industrial level
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HFA08TB60
O-220AC
HFA08TB60
12-Mar-07
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