zener zp 278
Abstract: Zener Diode minimelf Zener diode wz 162 krc 118 056 diode 918b zener diode 182 KD6 Z7 ZENER DIODE 18-2 diode 368b h25b
Text: MCC TM Micro Commercial Components ZENER DIODES 500mW ZENER DIODE / DODO-35 MCC PART NUMBER NOMINAL ZENER VOLTAGE VZ @ IZT VOLTS TEST CURRENT IZT mA MAXIMUM ZENER IMPEDANCE ‘B’ SUFFIX ONLY ZZT @ IZT Ω 1N5221B 2.4 20 30 1N5222B 2.5 20 30 1N5223B 2.7 20
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500mW
DODO-35
1N5221B
1N5222B
1N5223B
1N5224B
1N5225B
1N5226B
1N5227B
1N5228B
zener zp 278
Zener Diode minimelf
Zener diode wz 162
krc 118 056
diode 918b
zener diode 182
KD6 Z7
ZENER DIODE 18-2
diode 368b
h25b
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IRFH7911
Abstract: IRFH7911TRPBF W5337 AN1152 FET MARKING CODE FET MARKING QG marking JE FET PQFN footprint
Text: PD - 97427A IRFH7911PbF HEXFET Power MOSFET VDS Q1 30 Q2 30 V RDS on max 8.6 3.0 m: 8.3 34 nC 13 28 A (@VGS = 10V) Qg (typical) ID (@TA = 25°C) Dual PQFN 5X6 mm Applications • Control and synchronous MOSFET for buck converters Features and Benefits Benefits
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7427A
IRFH7911PbF
IRFH7911
IRFH7911TRPBF
W5337
AN1152
FET MARKING CODE
FET MARKING QG
marking JE FET
PQFN footprint
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Untitled
Abstract: No abstract text available
Text: PD - 97427 IRFH7911PbF HEXFET Power MOSFET VDS Q1 30 Q2 30 V RDS on max 8.6 3.0 m: 8.3 34 nC 13 28 A (@VGS = 10V) Qg (typical) ID (@TA = 25°C) Dual PQFN 5X6 mm Applications • Control and synchronous MOSFET for buck converters Features and Benefits Benefits
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IRFH7911PbF
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Untitled
Abstract: No abstract text available
Text: FastIRFET IRFH4253DPbF HEXFET Power MOSFET Q1 Q2 VDSS 25 25 V RDS on max (@VGS = 4.5V) 4.60 1.45 m Qg (typical) 10 31 nC ID (@TC = 25°C) 35 35 A Applications Control and Synchronous MOSFETs for synchronous buck converters
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IRFH4253DPbF
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Untitled
Abstract: No abstract text available
Text: FastIRFET IRFH4251DPbF HEXFET Power MOSFET Q1 Q2 VDSS 25 25 V RDS on max (@VGS = 4.5V) 4.60 1.10 m Qg (typical) 10 44 nC ID (@TC = 25°C) 45 45 A Applications Control and Synchronous MOSFETs for synchronous buck converters
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IRFH4251DPbF
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Untitled
Abstract: No abstract text available
Text: FastIRFET IRFH4251DPbF HEXFET Power MOSFET Q1 Q2 VDSS 25 25 V RDS on max (@VGS = 4.5V) 4.60 1.10 m Qg (typical) 10 44 nC ID (@TC = 25°C) 45 45 A Applications Control and Synchronous MOSFETs for synchronous buck converters
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IRFH4251DPbF
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Untitled
Abstract: No abstract text available
Text: FastIRFET IRFH4253DPbF HEXFET Power MOSFET Q1 Q2 VDSS 25 25 V RDS on max (@VGS = 4.5V) 4.60 1.45 m Qg (typical) 10 31 nC ID (@TC = 25°C) 35 35 A Applications Control and Synchronous MOSFETs for synchronous buck converters
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IRFH4253DPbF
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Untitled
Abstract: No abstract text available
Text: FastIRFET IRFH4251DPbF HEXFET Power MOSFET Q1 Q2 VDSS 25 25 V RDS on max (@VGS = 4.5V) 4.60 1.10 m Qg (typical) 10 44 nC ID (@TC = 25°C) 45 45 A Applications Control and Synchronous MOSFETs for synchronous buck converters
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IRFH4251DPbF
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Untitled
Abstract: No abstract text available
Text: FastIRFET IRFH4253DPbF HEXFET Power MOSFET Q1 Q2 VDSS 25 25 V RDS on max (@VGS = 4.5V) 4.60 1.45 m Qg (typical) 10 31 nC ID (@TC = 25°C) 35 35 A Applications Control and Synchronous MOSFETs for synchronous buck converters
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IRFH4253DPbF
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IRFH7911TRPBF
Abstract: No abstract text available
Text: PD - 97427D IRFH7911PbF HEXFET Power MOSFET VDS Q1 30 Q2 30 V RDS on max 8.6 3.0 m (@VGS = 10V) Qg (typical) ID (@TA = 25°C) Ã : 8.3 34 nC 13 28 A Ã ' * 6' 1& * 6 Dual PQFN 5X6 mm Applications • Control and synchronous MOSFET for buck converters
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97427D
IRFH7911PbF
IRFH7911TRPBF
IRFH7911TR2PBF
x5/2011
AN-1152
AN-1136
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IRFH7911TRPBF
Abstract: No abstract text available
Text: PD - 97427B IRFH7911PbF HEXFET Power MOSFET VDS Q1 30 Q2 30 V RDS on max 8.6 3.0 m: 8.3 34 nC 13 28 A (@VGS = 10V) Qg (typical) ID (@TA = 25°C) Dual PQFN 5X6 mm Applications • Control and synchronous MOSFET for buck converters Features and Benefits Benefits
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97427B
IRFH7911PbF
IRFH7911TRPBF
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AN1152
Abstract: No abstract text available
Text: PD - 97427C IRFH7911PbF HEXFET Power MOSFET VDS Q1 30 Q2 30 V RDS on max 8.6 3.0 m 8.3 34 nC 13 28 A (@VGS = 10V) Qg (typical) ID (@TA = 25°C) : Dual PQFN 5X6 mm Applications • Control and synchronous MOSFET for buck converters Features and Benefits
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97427C
IRFH7911PbF
IRFH7911TRPBF
IRFH7911TR2PBF
PQ5/2011
AN-1152
AN-1136
AN1152
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Untitled
Abstract: No abstract text available
Text: PD - 97427D IRFH7911PbF HEXFET Power MOSFET VDS Q1 30 Q2 30 V RDS on max 8.6 3.0 m (@VGS = 10V) Qg (typical) ID (@TA = 25°C) Ã : 8.3 34 nC 13 28 A Ã ' * 6' * 1& 6 Dual PQFN 5X6 mm Applications • Control and synchronous MOSFET for buck converters
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97427D
IRFH7911PbF
AN-1152
AN-1136
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pt 4515
Abstract: MMPZ5250B 52B zener MMSZ5259S MMHZ5246B marking 24b sot-23 MMCZ5248B MMPZ5248B MMDZ5235B MMGZ5242B
Text: SURFACE MOUNT DEVICES FOR HYBRID APPLICATIONS PLASTIC MATERIAL USED CARRIES UL 94V-0 Zener Voltage VZ V @ IZT TYPE Marking Min Nom Max Volts Volts Volts Test current IZT(mA) Maximum Zener impedance ZZT at IZT (Ω) 30 30 30 30 29 28 24 23 22 19 17 11 7 7
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MMHZ5270BPT
Abstract: GP 52b DIODE marking 24b sot-23 MMHZ5232 MMSZ5247SPT MMPZ5232BPT zener diode in 5229 b MMPZ5250BPT MMPZ5221BPT MMPZ5235BPT
Text: SURFACE MOUNT DEVICES FOR HYBRID APPLICATIONS PLASTIC MATERIAL USED CARRIES UL 94V-0 Zener Voltage VZ V @ IZT TYPE Marking Min Nom Max Volts Volts Volts Maximum Zener impedance Test current IZT(mA) Maximum reverse leakage current ZZT at IZT (Ω) Zzk (Ω)
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OT-23
MMHZ5270BPT
GP 52b DIODE
marking 24b sot-23
MMHZ5232
MMSZ5247SPT
MMPZ5232BPT
zener diode in 5229 b
MMPZ5250BPT
MMPZ5221BPT
MMPZ5235BPT
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Untitled
Abstract: No abstract text available
Text: FastIRFET IRFH4255DPbF HEXFET Power MOSFET Q1 Q2 VDSS 25 25 V RDS on max (@VGS = 4.5V) 4.60 2.10 m Qg (typical) 10 23 nC ID (@TC = 25°C) 30 30 A Applications Control and Synchronous MOSFETs for synchronous buck converters
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IRFH4255DPbF
com/technical-info/appnotes/an-994
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Untitled
Abstract: No abstract text available
Text: FastIRFET IRFH4255DPbF HEXFET Power MOSFET Q1 Q2 VDSS 25 25 V RDS on max (@VGS = 4.5V) 4.60 2.10 m Qg (typical) 10 23 nC ID (@TC = 25°C) 30 30 A Applications Control and Synchronous MOSFETs for synchronous buck converters
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IRFH4255DPbF
AN-994
com/technical-info/appnotes/an-994
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Untitled
Abstract: No abstract text available
Text: 1N5913B~1N5940B Zener diode Features 1. For surface mounted applications 2. Low zener impedance 3. Low regulation factor 4. VZ-tolerance±5% Applications Voltage stabilization Absolute Maximum Ratings Tj=25℃ Parameter Test Conditions Type Symbol Value Unit
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1N5913B
1N5940B
200mA
1-Jan-2006
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orient 817b
Abstract: UJT-2N2646 UJT-2N2646 PIN DIAGRAM DETAILS L 1011 817B CI 817b MDA2500 UJT 2N2646 Zener Diode SOT-23 929b 2N2646 pin diagram diode 913b
Text: DL150/D Rev. 2, May-2001 TVS/Zener Device Data PUBLICATION ORDERING INFORMATION NORTH AMERICA Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada
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DL150/D
May-2001
r14525
DLD601
orient 817b
UJT-2N2646
UJT-2N2646 PIN DIAGRAM DETAILS
L 1011 817B
CI 817b
MDA2500
UJT 2N2646
Zener Diode SOT-23 929b
2N2646 pin diagram
diode 913b
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GE Transient Voltage Suppression Manual
Abstract: diode 930 6V8A 2n2646 practical application circuits UJT 2N2646 Transient Voltage Suppression Manual Bidirectional Diode Thyristors 1.5ke 30A Zener Diode SOD323 pdz 4 .7b 919b diode varistor SVC 471 14 melf diode marking code
Text: DL150/D Rev. 2, May-2001 TVS/Zener Device Data PUBLICATION ORDERING INFORMATION NORTH AMERICA Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada
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DL150/D
May-2001
no422-3781
r14525
DL150/D
GE Transient Voltage Suppression Manual
diode 930 6V8A
2n2646 practical application circuits
UJT 2N2646
Transient Voltage Suppression Manual
Bidirectional Diode Thyristors 1.5ke 30A
Zener Diode SOD323 pdz 4 .7b
919b diode
varistor SVC 471 14
melf diode marking code
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Untitled
Abstract: No abstract text available
Text: New Product SiE860DF Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Gen III Power MOSFET • Ultra Low Thermal Resistance Using TopExposed PolarPAK® Package for DoubleSided Cooling
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SiE860DF
2002/95/EC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: SiE822DF Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Ultra Low Thermal Resistance Using TopExposed PolarPAK® Package for DoubleSided Cooling
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SiE822DF
2002/95/EC
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: New Product SiE860DF Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Gen III Power MOSFET • Ultra Low Thermal Resistance Using TopExposed PolarPAK® Package for DoubleSided Cooling
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SiE860DF
2002/95/EC
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: New Product SiE860DF Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Gen III Power MOSFET • Ultra Low Thermal Resistance Using TopExposed PolarPAK® Package for DoubleSided Cooling
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SiE860DF
2002/95/EC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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