philips diode PH 33D
Abstract: PH C5V1 philips diode PH 33m philips diode PH 33J PH 33D PH33D ph33g 33G PH DIODE PH 33G philips diode PH 37m
Text: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817
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1N821
1N821A
1N823
1N823A
1N825
1N825A
1N827
1N827A
1N829
1N829A
philips diode PH 33D
PH C5V1
philips diode PH 33m
philips diode PH 33J
PH 33D
PH33D
ph33g
33G PH DIODE
PH 33G
philips diode PH 37m
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philips diode PH 33D
Abstract: philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE
Text: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)
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1N5817
1N821
1N5818
1N821A
1N5819
philips diode PH 33D
philips diode PH 33J
philips diode PH 33m
DIODE C18 ph
33G PH DIODE
C18 ph
A6t SOT23
C33PH
PH 33G
T2D DIODE
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Untitled
Abstract: No abstract text available
Text: 300mAmps Surface Mount Fast Switching Diode Mechanical Dimension BAV16WS Description SOD-323 MARKING: T4 Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃ Parameter Symbol Limits Unit 100 V 75 V VR RMS 53 V Forward Continuous Current
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300mAmps
BAV16WS
OD-323
150mA
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Q62702-B0825
Abstract: No abstract text available
Text: BBY 53-03W Silicon Tuning Diode Preliminary data • High Q hyperabrupt tuning diode • Designed for low tuning voltage operation for VCO's in mobile communications equipment • High ratio at low reverse voltage Type Marking Ordering Code Pin Configuration
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3-03W
Q62702-B0825
OD-323
Sep-11-1996
Q62702-B0825
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B824 transistor
Abstract: transistor B824 B824 Q62702-B824
Text: BBY 53 Silicon Tuning Diode Preliminary data • High Q hyperabrupt tuning diode • Designed for low tuning voltage operation for VCO's in mobile communications equipment • High ratio at low reverse voltage Type Marking Ordering Code Pin Configuration BBY 53
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Q62702-B824
OT-23
Feb-04-1997
B824 transistor
transistor B824
B824
Q62702-B824
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diode marking 53
Abstract: marking VB DIODE
Text: SIEMENS BBY 53 Silicon Tuning Diode Preliminary data • High Q hyperabrupt tuning diode • Designed for low tuning voltage operation for VCO's in mobile communications equipment • High ratio at low reverse voltage Type Marking Ordering Code Pin Configuration
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OCR Scan
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Q62702-B824
OT-23
diode marking 53
marking VB DIODE
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1N4148WS
Abstract: No abstract text available
Text: Diode Silicon Epitaxial Switching Diode Feature: • Fast Switching Diode. Marking 1N4148WS= A2 with cathode band. Absolute Maximum Ratings Description Symbol Value Continuous Reverse Voltage VR 75 VRRM 100 *IF AV 150 Surge Forward Current t <1s and Tj = 25°C
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1N4148WS=
1N4148WS
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Untitled
Abstract: No abstract text available
Text: VBUS051BD-HD1 www.vishay.com Vishay Semiconductors Low Capacitance, Single-Line ESD-Protection Diode FEATURES • • • • 1 2 20856 • • • 20855 MARKING example only XY • • • • 21121 Bar = cathode marking Y = type code (see table below)
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VBUS051BD-HD1
LLP1006-2L
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: VBUS051BD-HD1 www.vishay.com Vishay Semiconductors Low Capacitance, Single-Line ESD-Protection Diode FEATURES • • • • 1 2 20856 • • • 20855 MARKING example only XY • • • • 21121 Bar = cathode marking Y = type code (see table below)
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VBUS051BD-HD1
LLP1006-2L
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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VBUS05L1-DD1-G-08
Abstract: No abstract text available
Text: VBUS05L1-DD1 www.vishay.com Vishay Semiconductors Bidirectional Symmetrical BiSy Low Capacitance, Single-Line ESD-Protection Diode in LLP1006-2M FEATURES • • • • • • • 2 1 21129 20855 MARKING (example only) XY • 21121 • • • Bar = pin 1 marking
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VBUS05L1-DD1
LLP1006-2M
LLP1006-2M
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
VBUS05L1-DD1-G-08
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PDF
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Untitled
Abstract: No abstract text available
Text: VBUS051BD-HD1 www.vishay.com Vishay Semiconductors Low Capacitance, Single-Line ESD-Protection Diode FEATURES • • • • 1 2 20856 • • • 20855 MARKING example only XY • • • • 21121 Bar = cathode marking Y = type code (see table below)
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VBUS051BD-HD1
LLP1006-2L
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: VBUS051BD-HD1 www.vishay.com Vishay Semiconductors Low Capacitance, Single-Line ESD-Protection Diode FEATURES • • • • 1 2 20856 • • • 20855 MARKING example only XY • • • • 21121 Bar = cathode marking Y = type code (see table below)
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Original
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VBUS051BD-HD1
LLP1006-2L
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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PDF
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Untitled
Abstract: No abstract text available
Text: VBUS05L1-DD1 www.vishay.com Vishay Semiconductors Bidirectional Symmetrical BiSy Low Capacitance, Single-Line ESD-Protection Diode in LLP1006-2M FEATURES • • • • • • • 2 1 21129 20855 MARKING (example only) XY • 21121 • • • Bar = pin 1 marking
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VBUS05L1-DD1
LLP1006-2M
LLP1006-2M
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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PDF
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ves05991
Abstract: SCD-80
Text: BBY 53-02W Silicon Tuning Diode • High Q hyperabrupt tuning diode 2 • Designed for low tuning voltage operation for VCO's in mobile communications equipment • High ratio at low reverse voltage 1 VES05991 Type Marking Pin Configuration Package BBY 53-02W
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3-02W
VES05991
SCD-80
Mar-23-1999
ves05991
SCD-80
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Untitled
Abstract: No abstract text available
Text: BBY 53-03W Silicon Tuning Diode 2 • High Q hyperabrupt tuning diode 1 • Designed for low tuning voltage operation for VCO's in mobile communications equipment • High ratio at low reverse voltage VPS05176 Type Marking Pin Configuration Package BBY 53-03W
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3-03W
VPS05176
OD-323
Oct-05-1999
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Untitled
Abstract: No abstract text available
Text: VBUS05L1-DD1 www.vishay.com Vishay Semiconductors Bidirectional Symmetrical BiSy Low Capacitance, Single-Line ESD-Protection Diode in LLP1006-2M FEATURES • • • • • • • 2 1 21129 20855 MARKING (example only) XY • 21121 • • • Bar = pin 1 marking
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VBUS05L1-DD1
LLP1006-2M
LLP1006-2M
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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diode T3 Marking
Abstract: maxim CODE TOP MARKING diode marking code maxim
Text: SIEMENS BBY 53-03W Silicon Tuning Diode Prelim inary data • High Q hyperabrupt tuning diode • Designed for low tuning voltage operation for VCO's in mobile communications equipment • High ratio at low reverse voltage Type Marking O rdering Code Pin Configuration
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OCR Scan
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3-03W
Q62702-B825
OD-323
diode T3 Marking
maxim CODE TOP MARKING
diode marking code maxim
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Q62702-B0862
Abstract: diode T3 Marking diode marking AU
Text: BBY 53-02W Silicon Tuning Diode Preliminary data • High Q hyperabrupt tuning diode • Designed for low tuning voltage operation 2 for VCO’s in mobile communications equipment • High ratio at low reverse voltage 1 VES05991 Type Marking Ordering Code
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3-02W
VES05991
Q62702-B0862
SCD-80
Q62702-B0862
diode T3 Marking
diode marking AU
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Untitled
Abstract: No abstract text available
Text: SIEMENS BBY 53-02W Silicon Tuning Diode Preliminary data • High Q hyperabrupt tuning diode • Designed for low tuning voltage operation for VCO’s in mobile communications equipment • High ratio at low reverse voltage Type Marking Ordering Code Pin Configuration
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OCR Scan
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3-02W
Q62702-B0862
SCD-80
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PDF
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Q62702B
Abstract: marking L
Text: SIEMENS BBY 53-02W Silicon Tuning Diode Preliminary data • High Q hyperabrupt tuning diode • Designed for low tuning voltage operation for VCO’s in mobile communications equipment • High ratio at low reverse voltage Type Marking Ordering Code Pin Configuration
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OCR Scan
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3-02W
Q62702-B0862
SCD-80
Q62702B
marking L
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sot143 marking code u1s
Abstract: No abstract text available
Text: BGX50A. Silicon Switching Diode Array • Bridge configuration • High-speed switching diode chip BGX50A " ! , ! , " , , Type BGX50A Package SOT143 Configuration bridge Marking U1s Maximum Ratings at TA = 25°C, unless otherwise specified Parameter
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BGX50A.
BGX50A
OT143
sot143 marking code u1s
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BAS16W
Abstract: MMBD4148W
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate DIODE MMBD4148W/BAS16W SWITCHING DIODE SOT-323 FEATURES z Fast Switching Speed z For General Purpose Switching Applications z High Conductance Marking: A2 Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃
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OT-323
MMBD4148W/BAS16W
OT-323
150mA
MMBD4148W
/BAS16W
BAS16W
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ka2 DIODE
Abstract: BAS16T
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-523 Plastic-Encapsulate DIODE MMBD4148T/BAS16T SWITCHING DIODE SOT-523 FEATURES z Fast Switching Speed z For General Purpose Switching Applications z High Conductance Marking MMBD4148T: KA2, BAS16T:A2
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OT-523
MMBD4148T/BAS16T
OT-523
MMBD4148T:
BAS16T
150mA
MMBD4148T
/BAS16T
ka2 DIODE
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Untitled
Abstract: No abstract text available
Text: VBUS051BD-HD1 Vishay Semiconductors Low Capacitance, Single-Line ESD-Protection Diode FEATURES • • • • • • • 1 2 20856 20855 MARKING example only • XY • • • • 21121 Bar = cathode marking Y = type code (see table below) X = date code
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VBUS051BD-HD1
LLP1006-2L
AEC-Q101
2002/95/EC
2002/96/EC
18-Jul-08
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