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    DIODE MARKING B2 Search Results

    DIODE MARKING B2 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE MARKING B2 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    marking A4t sot23

    Abstract: A1t SOT23 3Ft SOT23 PH C5V1 transistor t04 sot23 A4T SOT23 transistor marking codes A4p sot23 marking A1T A6t SOT23 marking z2p
    Text: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes 1999 Jun 11 Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE


    Original     		PDF 1N5817 1N821 1N5818 1N821A 1N5819 marking A4t sot23 A1t SOT23 3Ft SOT23 PH C5V1 transistor t04 sot23 A4T SOT23 transistor marking codes A4p sot23 marking A1T A6t SOT23 marking z2p

    philips diode PH 33D

    Abstract: PH C5V1 philips diode PH 33m philips diode PH 33J PH 33D PH33D ph33g 33G PH DIODE PH 33G philips diode PH 37m
    Text: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817


    Original     		PDF 1N821 1N821A 1N823 1N823A 1N825 1N825A 1N827 1N827A 1N829 1N829A philips diode PH 33D PH C5V1 philips diode PH 33m philips diode PH 33J PH 33D PH33D ph33g 33G PH DIODE PH 33G philips diode PH 37m

    philips diode PH 33D

    Abstract: philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE
    Text: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)


    Original     		PDF 1N5817 1N821 1N5818 1N821A 1N5819 philips diode PH 33D philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE

    marking A4t sot23

    Abstract: PH C5V1 T2D 79 diode C18 ph diode T2D DIODE transistor marking codes A4p 3Ft SOT23 A1t SOT23 A4T SOT23 transistor t04 sot23
    Text: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)


    Original     		PDF 1N5817 1N821 1N5818 1N821A 1N5819 marking A4t sot23 PH C5V1 T2D 79 diode C18 ph diode T2D DIODE transistor marking codes A4p 3Ft SOT23 A1t SOT23 A4T SOT23 transistor t04 sot23

    MARKING KE2

    Abstract: No abstract text available
    Text: MMBZ5221BS - MMBZ5259BS 200mW SURFACE MOUNT ZENER DIODE Features SOT-363 A C1 KXX Mechanical Data • · · · · A1 Case: SOT-363, Molded Plastic Terminals: Solderable per MIL-STD-202, Method 208 Polarity: See Diagram Marking: KXX: Part marking See table page 2


    Original     		PDF MMBZ5221BS MMBZ5259BS 200mW OT-363 OT-363, MIL-STD-202, DS31039 MARKING KE2

    Untitled

    Abstract: No abstract text available
    Text: DSA 15 IM 200 UC preliminary V RRM = I FAV = VF = Schottky Diode Gen ² High Performance Schottky Diode Low Loss and Soft Recovery Single Diode 200 V 15 A 0.78 V Part number 1 2 3 Marking on Product: SFMAUI Backside: cathode Applications: Features / Advantages:


    Original     		PDF O-252 60747and 20110721a

    IXYS DSA 12

    Abstract: No abstract text available
    Text: DSA 15 IM 200 UC preliminary V RRM = I FAV = VF = Schottky Diode Gen ² High Performance Schottky Diode Low Loss and Soft Recovery Single Diode 200 V 15 A 0.78 V Part number DSA 15 IM 200 UC 1 2 3 Marking on Product: SFMAUI Backside: cathode Features / Advantages:


    Original     		PDF O-252 60747and 20110721a IXYS DSA 12

    6P060AS

    Abstract: No abstract text available
    Text: DSEP6-06AS V RRM = I FAV = t rr = HiPerFRED High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 600 V 6A 20 ns Part number 3 1 Marking on Product: 6P060AS Backside: cathode Features / Advantages: Package: Applications: Planar passivated chips


    Original     		PDF DSEP6-06AS 6P060AS 6-06AS 60747and 20110915a 6P060AS

    DIODE MARKING CODE B3

    Abstract: DIODE MARKING B4 marking B4 diode l4 marking code diode DSEP6-06BS diode B4 252 diode marking b2
    Text: DSEP6-06BS preliminary V RRM = I FAV = t rr = HiPerFRED High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 600 V 6A 15 ns Part number DSEP6-06BS 3 1 Marking on Product: P6QGUI Backside: cathode Features / Advantages: Applications:


    Original     		PDF DSEP6-06BS Recti10 60747and 20110915a DIODE MARKING CODE B3 DIODE MARKING B4 marking B4 diode l4 marking code diode DSEP6-06BS diode B4 252 diode marking b2

    Untitled

    Abstract: No abstract text available
    Text: DSEP6-06BS preliminary V RRM = I FAV = t rr = HiPerFRED High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 600 V 6A 15 ns Part number 3 1 Marking on Product: P6QGUI Backside: cathode Features / Advantages: Package: Applications: Planar passivated chips


    Original     		PDF DSEP6-06BS 60747and 20110915a

    E72873

    Abstract: VUB116-16NOXT
    Text: VUB 116-16NOXT Three Phase Rectiier Bridge Rectiier Diode with IGBT and Fast Recovery Diode for Braking System Fast Recov. Diode IGBT VRRM = 1600 V VCES = 1200 V VCES = 1200 V IdAVM = 116 A VF = 2.75 V IC80 = 84 A IFSM = 700 A IFSM = 200 A VCEsat = 2.1 V Part name Marking on product


    Original     		PDF 116-16NOXT VUB116-16NOXT E72873 20110907b E72873 VUB116-16NOXT

    6P060AS

    Abstract: No abstract text available
    Text: DSEP6-06AS V RRM = I FAV = t rr = HiPerFRED High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 600 V 6A 20 ns Part number DSEP6-06AS 3 1 Marking on Product: 6P060AS Backside: cathode Features / Advantages: Applications: Package: ● Planar passivated chips


    Original     		PDF DSEP6-06AS 6P060AS 6-06AS 60747and 20110915a 6P060AS

    Untitled

    Abstract: No abstract text available
    Text: SDP410Q Semiconductor Band switching Diode Features • VHF tuner band switch applications. • Low Series Resistance : rS = 0.9 Max. • Low Total Capacitance : CT = 1.2pF(Max.) Ordering Information Type No. Marking Package Code SDP410Q B2 SOD-523 Outline Dimensions


    Original     		PDF SDP410Q OD-523 KSD-E003-002

    diode marking b2

    Abstract: SDP410D
    Text: SDP410D Semiconductor Band switching Diode Features • VHF tuner band switch applications. • Low Series Resistance : rS = 0.9Ω Max. • Small Total Capacitance : CT = 1.2pF(Max.) Ordering Information Type No. Marking Package Code SDP410D B2 SOD-323 unit :


    Original     		PDF SDP410D OD-323 KSD-C003-000 100MHz diode marking b2 SDP410D

    SDP410D

    Abstract: No abstract text available
    Text: SDP410D Semiconductor Band switching Diode Features • VHF tuner band switch applications. • Low Series Resistance : rS = 0.9Ω Max. • Small Total Capacitance : CT = 1.2pF(Max.) Ordering Information Type No. Marking Package Code SDP410D B2 SOD-323 unit : mm


    Original     		PDF SDP410D OD-323 KSD-C003-000 100MHz SDP410D

    DPG10I300PA

    Abstract: No abstract text available
    Text: DPG 10 IM 300 UC V RRM = I FAV = t rr = HiPerFRED² High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 300 V 10 A 35 ns Part number 1 2 3 Marking on Product: PAOGUI Backside: cathode Features / Advantages: Package: Applications: Planar passivated chips


    Original     		PDF 60747and 20090323a DPG10I300PA

    SDP410Q

    Abstract: diode marking b2
    Text: SDP410Q Semiconductor Band switching Diode Features • VHF tuner band switch applications. • Low Series Resistance : rS = 0.9Ω Max. • Low Total Capacitance : C T = 1.2pF(Max.) Ordering Information Type No. Marking Package Code SDP410Q B2 SOD-523 Outline Dime nsions


    Original     		PDF SDP410Q OD-523 KSD-E003-001 100MHz SDP410Q diode marking b2

    CT-815

    Abstract: marking code BB Diode variable capacitance diode 520 BB 112 transistor BB 112 Am tuning DIODE capacitance BB112 CT815
    Text: BB 112 Silicon Variable Capacitance Diode ● For AM tuning applications ● Specified tuning range 1 … 8.0 V BB 112 Type Marking Ordering Code Pin Configuration Package1 BB 112 – Q62702-B240 TO-92 Maximum Ratings Parameter Symbol Values Unit Reverse voltage


    Original     		PDF Q62702-B240 CT-815 marking code BB Diode variable capacitance diode 520 BB 112 transistor BB 112 Am tuning DIODE capacitance BB112 CT815

    03866

    Abstract: 07062
    Text: DPG 10 IM 300 UC V RRM = I FAV = t rr = HiPerFRED² High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 300 V 10 A 35 ns Part number DPG 10 IM 300 UC 1 2 3 Marking on Product: PAOGUI Backside: cathode Features / Advantages: Applications:


    Original     		PDF 60747and 20090323a 03866 07062

    400QB

    Abstract: No abstract text available
    Text: DPG 60 IM 400QB advanced V RRM = I FAV = t rr = HiPerFRED² High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 400 V 60 A 45 ns 1 Part number Marking on product 2 DPG 60 IM 400QB 3 Features / Advantages: Applications: Package: ● Planar passivated chips


    Original     		PDF 400QB 60747and 400QB

    h2 marking

    Abstract: No abstract text available
    Text: ERB43 0.5A ( 200 to 800V / 0.5A ) Outline drawings, mm FAST RECOVERY DIODE ø3.0 ø0.8 5.0 28 MIN. 28 MIN. Marking Features High voltage by mesa design Color code : Green High reliability Voltage class Applications Maximum ratings and characteristics 種07.


    Original     		PDF ERB43 ERB43 h2 marking

    sod-323 diode MARKING CODE 4

    Abstract: No abstract text available
    Text: PRELIMINARY DATASHEET 200mW SOD-323 SURFACE MOUNT Small Outline Flat Lead Plastic Package Fast Switching Schottky Barrier Diode Absolute Maximum Ratings Symbol PD TSTG DEVICE MARKING CODE: Device Type BAT42WS BAT43WS TA = 25°C unless otherwise noted Parameter


    Original     		PDF 200mW OD-323 BAT42WS BAT43WS sod-323 diode MARKING CODE 4

    Untitled

    Abstract: No abstract text available
    Text: SIEM ENS Silicon Variable.Capacitance Diode B B 112 • For AM tuning applications • Specified tuning range 1 . .,8 .0 V Type Marking Ordering Code BB 112 — Q62702-B240 Pin Configuration i ^ i - 03 Package1 TO-92 1 O- ^


    OCR Scan     		PDF Q62702-B240 EHA07002 fiE35bD5 235b05 S35b05

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BAR 63. W Silicon PIN Diode >PIN diode for high speed switching of RF signal »Low forward resistance >Very low capacitance • For frequencies up to 3 GHz BAR 63-04W BAR 63-05W BAR 63-06W C1/C2 A1/A2 EL -0 - nr TJ nr nr Marking Ordering Code Pin Configuration


    OCR Scan     		PDF 3-04W 3-05W 3-06W Q62702-A1261 Q62702-A1267 Q62702-A1268 OT-323