philips diode PH 33D
Abstract: PH C5V1 philips diode PH 33m philips diode PH 33J PH 33D PH33D ph33g 33G PH DIODE PH 33G philips diode PH 37m
Text: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817
|
Original
|
PDF
|
1N821
1N821A
1N823
1N823A
1N825
1N825A
1N827
1N827A
1N829
1N829A
philips diode PH 33D
PH C5V1
philips diode PH 33m
philips diode PH 33J
PH 33D
PH33D
ph33g
33G PH DIODE
PH 33G
philips diode PH 37m
|
philips diode PH 33D
Abstract: philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE
Text: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)
|
Original
|
PDF
|
1N5817
1N821
1N5818
1N821A
1N5819
philips diode PH 33D
philips diode PH 33J
philips diode PH 33m
DIODE C18 ph
33G PH DIODE
C18 ph
A6t SOT23
C33PH
PH 33G
T2D DIODE
|
marking A4t sot23
Abstract: PH C5V1 T2D 79 diode C18 ph diode T2D DIODE transistor marking codes A4p 3Ft SOT23 A1t SOT23 A4T SOT23 transistor t04 sot23
Text: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)
|
Original
|
PDF
|
1N5817
1N821
1N5818
1N821A
1N5819
marking A4t sot23
PH C5V1
T2D 79 diode
C18 ph diode
T2D DIODE
transistor marking codes A4p
3Ft SOT23
A1t SOT23
A4T SOT23
transistor t04 sot23
|
Untitled
Abstract: No abstract text available
Text: VBUS051BD-HD1 Vishay Semiconductors Low Capacitance, Single-Line ESD-Protection Diode FEATURES • • • • • • • 1 2 20856 20855 MARKING example only • XY • • • • 21121 Bar = cathode marking Y = type code (see table below) X = date code
|
Original
|
PDF
|
VBUS051BD-HD1
LLP1006-2L
AEC-Q101
2002/95/EC
2002/96/EC
18-Jul-08
|
VBUS051BD-HD1
Abstract: LLP1006-2L VBUS051BD esdprotection
Text: VBUS051BD-HD1 Vishay Semiconductors Low Capacitance, Single-Line ESD-Protection Diode FEATURES • • • • • • • 1 2 20856 20855 MARKING example only • XY • • • 21121 Bar = cathode marking Y = type code (see table below) X = date code Ultra compact LLP1006-2L package
|
Original
|
PDF
|
VBUS051BD-HD1
LLP1006-2L
18-Jul-08
VBUS051BD-HD1
VBUS051BD
esdprotection
|
VISHAY diode MARKING EG
Abstract: No abstract text available
Text: VBUS051BD-HD1 Vishay Semiconductors Low Capacitance, Single-Line ESD-Protection Diode FEATURES • • • • • • • 1 2 20856 20855 MARKING example only • XY • • • 21121 Bar = cathode marking Y = type code (see table below) X = date code Ultra compact LLP1006-2L package
|
Original
|
PDF
|
VBUS051BD-HD1
LLP1006-2L
2002/95/EC
2002/96/EC
11-Mar-11
VISHAY diode MARKING EG
|
marking code R5 sot23
Abstract: R5 SOT 820 marking MARKING CODE VF CBAS17
Text: Central CBAS17 TM Semiconductor Corp. SURFACE MOUNT LOW VOLTAGE SILICON STABISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CBAS17 type is a planar epitaxial silicon switching diode, designed for low voltage stabilizing applications. MARKING CODE: A91 SOT-23 CASE
|
Original
|
PDF
|
CBAS17
OT-23
100mA
marking code R5 sot23
R5 SOT
820 marking
MARKING CODE VF
CBAS17
|
Untitled
Abstract: No abstract text available
Text: VCUT0505B-HD1 Vishay Semiconductors Bidirectional Symmetrical BiSy Single Line ESD-Protection Diode in LLP1006-2L FEATURES • • • • • • • 2 1 21129 20855 MARKING (example only) • XY • • • 21121 Bar = pin 1marking X = date code Y = type code (see table below)
|
Original
|
PDF
|
VCUT0505B-HD1
LLP1006-2L
LLP1006-2L
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
|
Untitled
Abstract: No abstract text available
Text: VCUT0505B-HD1 Vishay Semiconductors Bidirectional Symmetrical BiSy Single Line ESD-Protection Diode in LLP1006-2L FEATURES • • • • • • • 2 1 21129 20855 MARKING (example only) • XY • • • 21121 Bar = pin 1marking X = date code Y = type code (see table below)
|
Original
|
PDF
|
VCUT0505B-HD1
LLP1006-2L
LLP1006-2L
2002/95/EC
2002/96/EC
11-Mar-11
|
745 diode
Abstract: 820 marking CBAS17 CR265
Text: Central TM Semiconductor Corp. CBAS17 LOW VOLTAGE STABISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CBAS17 type is a planar epitaxial silicon switching diode, designed for low voltage stabilizing applications. Marking code is A91. SOT-23 CASE MAXIMUM RATINGS TA=25oC
|
Original
|
PDF
|
CBAS17
OT-23
100mA
745 diode
820 marking
CBAS17
CR265
|
Untitled
Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SCHOTTKY BARRIER SWITCHING DIODE SD103AW - SD103CW SOD-123 PLASTIC PACKAGE Marking: Date Code Polarity: Cathode Band SD103AW=S4 SD103BW=S5 SD103CW=S6 ABSOLUTE MAXIMUM RATINGS
|
Original
|
PDF
|
SD103AW
SD103CW
OD-123
SD103BW
SD103CW
C-120
|
SD103AW
Abstract: SD103BW SD103CW continental SOD123 103CW
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SCHOTTKY BARRIER SWITCHING DIODE SD103AW - SD103CW SOD-123 PLASTIC PACKAGE Marking: Date Code Polarity: Cathode Band SD103AW=S4 SD103BW=S5 SD103CW=S6 ABSOLUTE MAXIMUM RATINGS
|
Original
|
PDF
|
SD103AW
SD103CW
OD-123
SD103BW
SD103CW
C-120
continental SOD123
103CW
|
S11-Parameters
Abstract: VR 12750 Q62702-A0062 ts 083 diode 6390 ua 7230 c
Text: Silicon Schottky Diode BAT 15-098 Preliminary Data DBS mixer application to 10 GHz Low noise figure ● Low barrier type ● ● ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code Pin Configuration tape and reel
|
Original
|
PDF
|
Q62702-A0062
OD-123
S11-Parameters
VR 12750
Q62702-A0062
ts 083
diode 6390
ua 7230 c
|
R5 SOT23
Abstract: No abstract text available
Text: Central CBAS17 Semiconductor Corp. SURFACE MOUNT LOW VOLTAGE SILICON STABISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CBAS17 type is a planar epitaxial silicon switching diode, designed for low voltage stabilizing applications. MARKING CODE: A91 SOT-23 CASE
|
OCR Scan
|
PDF
|
CBAS17
OT-23
100mA
CPD63
OT-23
R5 SOT23
|
|
marking A7s
Abstract: siemens em 350 99 DIODE marking 351
Text: SIEMENS Silicon Switching Diode Array BAV 99 Features • For high-speed switching • Connected in series Type Marking Ordering Code tape and reel BAV 99 A7s Q68000-A549 Pin Configuration Package1) SOT-23 3 ¿— EH I IX ° P U 07005 Maximum Ratings per Diode
|
OCR Scan
|
PDF
|
Q68000-A549
OT-23
BAV99
M0076
marking A7s
siemens em 350 99
DIODE marking 351
|
Untitled
Abstract: No abstract text available
Text: Central Semiconductor Corp. C B AS17 LOW VOLTAGE STABISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CBAS17 type is a planar epitaxial silicon switching diode, designed for low voltage stabilizing applications. Marking code is A91. SOT-23 CASE MAXIMUM RATINGS
|
OCR Scan
|
PDF
|
CBAS17
OT-23
100nction
100mA
|
Untitled
Abstract: No abstract text available
Text: Central Semiconductor Corp. CBAS17 LOW VOLTAGE STABISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CBAS17 type is a planar epitaxial silicon switching diode, designed for low voltage stabilizing applications. Marking code is A91. SOT-23 CASE MAXIMUM RATINGS TA=25°C
|
OCR Scan
|
PDF
|
CBAS17
OT-23
100mA
G0D171S
|
Untitled
Abstract: No abstract text available
Text: SIEMENS Silicon Schottky Diode BAT 15-098 Preliminary Data • DBS mixer application to 10 GHz • Low noise figure • Low barrier type ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code Pin Configuration
|
OCR Scan
|
PDF
|
Q62702-A0062
OD-123
EHA07001
EHD07088
fl535bQ5
|
Untitled
Abstract: No abstract text available
Text: Central' Semiconductor Corp. CBAS17 LOW VOLTAGE STABISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CBAS17 type is a planar epitaxial silicon switching diode, designed for low voltage stabilizing applications. Marking code is A91. SOT-23 CASE MAXIMUM RATINGS TA=25°C
|
OCR Scan
|
PDF
|
CBAS17
OT-23
100mA
|
Untitled
Abstract: No abstract text available
Text: SIEMENS BAT 14-099 Silicon Dual Schottky Diode • DBS mixer application to 12 GHz • Low noise figure • Medium barrier type ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code tape and reel BAT 14-099
|
OCR Scan
|
PDF
|
Q62702-A3461
OT-143
EHD07095
01BQ33E
|
BAT 545
Abstract: No abstract text available
Text: SIEMENS Silicon Dual Schottky Diode BAT 15-099 Preliminary Data Features • DBS mixer application to 12 GHz • Low noise figure • Low barrier type ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code tape and reel
|
OCR Scan
|
PDF
|
Q62702-A66
P-SOT-143-4-6
EHA0701!
BAT 545
|
Untitled
Abstract: No abstract text available
Text: SIEMENS Silicon Dual Schottky Diode BAT 15-099 Preliminary Data Features • DBS mixer application to 12 GHz • Low noise figure • Low barrier type ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code tape and reel
|
OCR Scan
|
PDF
|
Q62702-A66
P-SOT-143-4-6
EHD07Ã
023SbOS
015Q341
|
sot-23 marking code T25
Abstract: No abstract text available
Text: Central" Semiconductor Corp. CBAS17 LOW VOLTAGE STABISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CBAS17 type is a planar epitaxial silicon switching diode, designed for low voltage stabilizing applications. MARKING CODE: A91 SOT-23 CASE MAXIMUM RATINGS: T^=25°C unless otherwise noted
|
OCR Scan
|
PDF
|
CBAS17
OT-23
100mA
OT-23
sot-23 marking code T25
|
SK 10 BAT 065
Abstract: 9620* diode sk 10 bat
Text: SIEMENS Silicon Dual Schottky Diode BAT 14-099 • DBS mixer application to 12 GHz • Low noise figure • Medium barrier type ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code tape and reel Pin Configuration
|
OCR Scan
|
PDF
|
Q62702-A3461
OT-143
EH007095
SK 10 BAT 065
9620* diode
sk 10 bat
|