1N4148WT
Abstract: 1N4448WT marking codes fairchild 1N914BWT 914BWT FAIRCHILD DIODE Fairchild marking change diode Fairchild Diode Marking Change
Text: 1N4148WT / 1N4448WT / 1N914BWT High Conductance Fast Switching Diode Features • • • • • • • Device Marking Code Device Type Device Marking 1N4148WT E1 1N4448WT E2 1N914BWT E3 Fast Switching Diode Trr <4.0nsec Flat Lead, Surface Mount Device Under 0.70mm Height
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1N4148WT
1N4448WT
1N914BWT
1N4148WT
1N4448WT
OD523F
OD-523F
marking codes fairchild
1N914BWT
914BWT
FAIRCHILD DIODE
Fairchild marking change diode
Fairchild Diode Marking Change
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATASHEET 200mW SOD-523 SURFACE MOUNT DEVICE MARKING CODE: Very Small Outline Flat Lead Plastic Package General Purpose Application Fast Switching Diode Absolute Maximum Ratings Symbol PD TSTG TJ Power Dissipation Storage Temperature Range Value
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200mW
OD-523
TC1N4148WT
TC1N4448WT
TC1N914BWT
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SOD-523 E1 marking
Abstract: MARKING C SOD523
Text: SEMICOND UC TOR 200mW SOD-523 SURFACE MOUNT DEVICE MARKING CODE: Very Small Outline Flat Lead Plastic Package General Purpose Application Fast Switching Diode Absolute Maximum Ratings Symbol PD TSTG TJ Power Dissipation Storage Temperature Range Value Units
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200mW
OD-523
TC1N4148WT
TC1N4448WT
TC1N914BWT
SOD-523 E1 marking
MARKING C SOD523
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A82 SMD
Abstract: marking code jg SMD diode smd diode marking jg smd diode A82 marking code JG SMD d1875 smd A82 smd code A82 BAV70-184 smd diode code F3
Text: SMD Switching Diodes Three Terminals Part No. Peak Reverse Marking Voltage Code Max. Forward Voltage Drop @ IF VRRM (V) VF (V) IF (mA) SMD Diodes Max. Max. Diode Max. Reverse Reverse CapaciPackCurrent Recov- tance Pinout age @ VR ery Time @1MHz Diag. 0V
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TWT4148S-221F5
TWT4148A-120F5
TWT4148C-121F5
TWT4148S-221WT
TWT4148A-120WT
TWT4148C-121WT
A82 SMD
marking code jg SMD diode
smd diode marking jg
smd diode A82
marking code JG SMD
d1875
smd A82
smd code A82
BAV70-184
smd diode code F3
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PDF
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smd diode A82
Abstract: smd diode marking A3 smd code A82 DIODE smd marking A3 marking code JG SMD TWT4148A-120F5 diode SMD MARKING CODE A6
Text: SMD Switching Diodes Three Terminals Part No. Peak Reverse Marking Voltage Code Max. Forward Voltage Drop @ IF VRRM (V) VF (V) IF (mA) SMD Diodes Max. Max. Diode Max. Reverse Reverse CapaciPackCurrent Recov- tance Pinout age @ VR ery Time @1MHz Diag. 0V
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TWT4148S-221F5
TWT4148A-120F5
TWT4148C-121F5
TWT4148S-221WT
TWT4148A-120WT
TWT4148C-121WT
smd diode A82
smd diode marking A3
smd code A82
DIODE smd marking A3
marking code JG SMD
TWT4148A-120F5
diode SMD MARKING CODE A6
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zener diode 4.7V
Abstract: marking h2 SOD-323 ZENER Zener Diode SOD-323 marking code 2b marking 2h SOD-323 ZENER A25 ZENER DIODE E1 sod323 diode marking code 2E zener diode 4.7V current rating diode F4 8a marking code 8A
Text: Surface Mount Zener Diode MMSZ52XXBS Series A suffix of "-C" specifies halogen-free 200mW, SOD-323 Electrical Characteristics @ T A=25 C unless otherwise specified Zener Voltage Range Note 1 Type Number Marking Code Nom V 2.4 2.5 2.7 3.0 3.3 3.6 3.9 4.3
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MMSZ52XXBS
200mW,
OD-323
150OC
01-Jun-2002
zener diode 4.7V
marking h2 SOD-323 ZENER
Zener Diode SOD-323 marking code 2b
marking 2h SOD-323
ZENER A25
ZENER DIODE E1
sod323 diode marking code 2E
zener diode 4.7V current rating
diode F4 8a
marking code 8A
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zener diode E2
Abstract: ZENER DIODE E1 zener diode J3 DIODE H5 c2 marking C5 87 marking code MM zener MMSZ5240 MMSZ5257B RoHS MMSZ5221B MMSZ5222B
Text: Surface Mount Zener Diode MMSZ52XXB Series A suffix of "-C" specifies halogen & lead-free 500mW,5% SOD-123 Electrical Characteristics @ T A=25 C unless otherwise specified Type Number Marking Code Zener Voltage Range Note 1 Nom V 2.4 2.5 2.7 3.0 3.3 3.6
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MMSZ52XXB
500mW
OD-123
01-Jun-2002
zener diode E2
ZENER DIODE E1
zener diode J3
DIODE H5 c2
marking C5 87
marking code MM zener
MMSZ5240
MMSZ5257B RoHS
MMSZ5221B
MMSZ5222B
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BAV99
Abstract: No abstract text available
Text: 32E 1 • fla3fc»32ü DOlbSB6! H « S I P Silicon Switching Diode Array BAV 99 _ SIEMENS/ SPCLi SEMICONDS • • T-*>3-o1 _ For high-speed switching Connected in series C2.AT Type S B A V 99 Marking Ordering code or versions In bulk
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OCR Scan
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Q68000-A1185
Q68000-A549
fl23b32G
BAV99
T-03-09
23b320
0QlbS42
BAV99
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diode marking YF
Abstract: C 5388 T460 t930 marking A46 erc12 diode ERC12 T151 T760 T810
Text: ERC12 i .2A — • # » ■* » : Outline Drawings GENERAL USE RECTIFIER DIODE ■ 4 # « : Features • ■0— Hi gh surge current • 'J vjK , ISM • S fflfit t Compact size, lightweight H S iT F • Marking High reliability * 7 “ a - K :* Color code : Green
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OCR Scan
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ERC12
eBTS3083^
clifc83Â
I95t/R89
Shl50
diode marking YF
C 5388
T460
t930
marking A46
erc12 diode
T151
T760
T810
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PDF
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t930
Abstract: ERA38 T151 T760
Text: ERA38 o .5A K Ü S E S k • * » ■ * » : Outline Drawings FAST RECOVERY DIODE 3.0 : Features ■15/jv I Marking Super high speed switching • f f i 'W , 5mmki vT g mmA-siffi Ultra small package. * 7 - □ —K : È Color code : White Possible for 5mm pitch automatic insertion
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OCR Scan
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ERA38
I95t/R89)
t930
T151
T760
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PDF
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marking 2U 77 diode
Abstract: marking DIODE 2U 04 marking code IAM 12CT ERC84-009 diode marking code 7-7-7-7 marking 2U diode marking DIODE 2U
Text: ERC84-009I3A K • fl- B '+ ii : Outline Drawings SCHOTTKY BARRIER DIODE Features • 1&VF Low VF W$z7j\ : Marking Ä 7 “- 3 - K : f f Color code : Blue Super high speed switching. • 7 V - * - f t « C J&ftflH Ktt High reliability by planer design. Abridged type nam e'"'" Î 1
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OCR Scan
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ERC84-009
marking 2U 77 diode
marking DIODE 2U 04
marking code IAM
12CT
diode marking code 7-7-7-7
marking 2U diode
marking DIODE 2U
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Untitled
Abstract: No abstract text available
Text: ERB06HA : Outline Drawings FAST RECOVERY DIODE Mft-Bk •Features • t ) ? —TV£* |fg?jv : Marking M ost suitable fo r co lo r T .V . dam per • w r t m z V M E . ir 'f a ' * 7- 3- K : ft High voltage by mesa design. Color code : Blue • B it CD High reliability
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OCR Scan
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ERB06HA)
E95ft--T
I95t/R89)
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PDF
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h51 diode
Abstract: No abstract text available
Text: ERB44 ia  jÈ S S S f t ^ V i—K • W fé '+ fè : Outline Drawings FAST RECOVERY DIODE ■ ¡E H I : Features :7jv : Marking High voltage by mesa design. • ftflM R tt # 7 - 3 - K: m High reliability Color code : Green ■ E J ii : Applications Abridged type name
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OCR Scan
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ERB44(
10msS
Tg30S
I95t/R89)
h51 diode
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Untitled
Abstract: No abstract text available
Text: VESD05A1B-02Z Vishay Semiconductors ESD-Protection Diode in SOD923 Features • Single-line ESD-protection device • ESD-immunity acc. IEC 61000-4-2 e3 > 20 kV contact discharge > 30 kV air discharge • Tiny SOD923 package • Package height = 0.4 mm • Typ. capacitance 12 pF VR = 2.5 V; f = 1 MHz
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VESD05A1B-02Z
OD923
OD923
2002/95/EC
2002/96/EC
VESD05A1B-02Z
VESD05A1B-02Z-GS08
08-Apr-05
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Untitled
Abstract: No abstract text available
Text: VESD05A1B-02Z Vishay Semiconductors ESD-Protection Diode in SOD923 Features • • • • • • • • • • • Single-line ESD-Protection device ESD-Immunity acc. IEC 61000-4-2 e3 > 20 kV contact discharge > 30 kV air discharge Tiny SOD923 package
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VESD05A1B-02Z
OD923
OD923
2002/95/EC
2002/96/EC
VESD05A1B-02Z
VESD05A1B-02Z-GS08
08-Apr-05
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PDF
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Untitled
Abstract: No abstract text available
Text: VESD05A1B-02Z Vishay Semiconductors ESD-Protection Diode in SOD923 Features • Single-line ESD-Protection device • ESD-Immunity > 20 kV e3 IEC 61000-4-2 contact discharge • Tiny SOD923 package • Package Height = 0.4 mm • Typ. capacitance 12 pF (VR = 2.5 V; f = 1 MHz)
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VESD05A1B-02Z
OD923
OD923
2002/95/EC
2002/96/EC
VESD05A1B-02Z
VESD05A1B-02Z-GS08
08-Apr-05
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PDF
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marking AE
Abstract: No abstract text available
Text: VESD12A1C-02Z Vishay Semiconductors ESD-Protection Diode in SOD923 Features • Single-line ESD-Protection device • Reverse working range = 12 V e3 • ESD-Immunity acc. IEC 61000-4-2 > 30 kV contact discharge > 30 kV air discharge • Tiny SOD923 package
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VESD12A1C-02Z
OD923
OD923
2002/95/EC
2002/96/EC
VESD12A1C-02Z-GS08ed
08-Apr-05
marking AE
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marking code diode u4
Abstract: marking u4 diode IEC-61000-4-2 VESD05A8C-HNH
Text: VESD05A8C-HNH Vishay Semiconductors 8-Line ESD-Protection Diode Array in LLP1713-9L Features • • • • • • • • • • Ultra compact LLP1713-9L package Low package profile < 0.6 mm 8-line ESD-protection e3 Low leakage current IR < 0.1 µA Low load capacitance CD = 10 pF
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VESD05A8C-HNH
LLP1713-9L
LLP1713-9L
2002/95/EC
2002/96/EC
VESD05A8C-HNH
VESD05A8C-HNH-GS08
18-Jul-08
marking code diode u4
marking u4 diode
IEC-61000-4-2
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VESD03A1C-02Z
Abstract: VESD03A1C-02Z-GS08
Text: VESD03A1C-02Z Vishay Semiconductors ESD-Protection Diode in SOD923 Features • Single-line ESD-Protection device • ESD-Immunity acc. IEC 61000-4-2 e3 > 30 kV contact discharge > 30 kV air discharge • Tiny SOD923 package • Package Height = 0.4 mm • Typ. capacitance 46 pF VR = 2.5 V; f = 1 MHz
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VESD03A1C-02Z
OD923
OD923
2002/95/EC
2002/96/EC
VESD03A1C-02Z-GS08
08-Apr-05
VESD03A1C-02Z
VESD03A1C-02Z-GS08
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PDF
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VESD03A1C-02Z
Abstract: No abstract text available
Text: VESD03A1C-02Z Vishay Semiconductors ESD-Protection Diode in SOD923 Features • Single-line ESD-protection device • ESD-immunity acc. IEC 61000-4-2 e3 > 30 kV contact discharge > 30 kV air discharge • Tiny SOD923 package • Package height = 0.4 mm • Typ. capacitance 46 pF VR = 2.5 V; f = 1 MHz
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VESD03A1C-02Z
OD923
OD923
2002/95/EC
2002/96/EC
VESD03A1C-02Z
VESD03A1C-02Z-GS08
08-Apr-05
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PDF
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Marking AE
Abstract: No abstract text available
Text: VESD12A1C-02Z Vishay Semiconductors ESD-Protection Diode in SOD923 Features • Single-line ESD-protection device • Reverse working range = 12 V e3 • ESD-immunity acc. IEC 61000-4-2 > 30 kV contact discharge > 30 kV air discharge • Tiny SOD923 package
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VESD12A1C-02Z
OD923
OD923
2002/95/EC
2002/96/EC
VESD12A1C-02Z
VESD12A1C-02Z-GS08
08-Apr-05
Marking AE
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VESD05A1C-02Z-GS08
Abstract: 20511
Text: VESD05A1C-02Z Vishay Semiconductors ESD-Protection Diode in SOD923 Features • Single-line ESD-protection device • ESD-immunity acc. IEC 61000-4-2 e3 > 30 kV contact discharge > 30 kV air discharge • Tiny SOD923 package • Package height = 0.4 mm • Typ. capacitance 38 pF VR = 2.5 V; f = 1 MHz
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VESD05A1C-02Z
OD923
OD923
2002/95/EC
2002/96/EC
VESD05A1C-02Z
VESD05A1C-02Z-GS08
08-Apr-05
20511
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PDF
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VESD05A8A-HNH-GS08
Abstract: VESD05A8A-HNH marking u4 diode LLP1713 LLP1713-9L marking code diode u4
Text: VESD05A8A-HNH Vishay Semiconductors 8-line ESD Protection Diode Array in LLP1713-9L Features • • • • • • Ultra compact LLP1713-9L package Low package profile < 0.6 mm e3 8-Line ESD protection Low leakage current IR < 1 µA Low load capacitance CD = 30 pF
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VESD05A8A-HNH
LLP1713-9L
LLP1713-9L
2002/95/EC
2002/96/EC
08-Apr-05
VESD05A8A-HNH-GS08
VESD05A8A-HNH
marking u4 diode
LLP1713
marking code diode u4
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PDF
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marking code diode u4
Abstract: No abstract text available
Text: VESD05A8A-HNH Vishay Semiconductors 8-Line ESD-Protection Diode Array in LLP1713-9L Features • • • • • • • • • • Ultra compact LLP1713-9L package Low package profile < 0.6 mm 8-line ESD-protection e3 Low leakage current IR < 1 µA Low load capacitance CD = 30 pF
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VESD05A8A-HNH
LLP1713-9L
LLP1713-9L
2002/95/EC
2002/96/EC
VESD05A8A-HNH
VESD05A8A-HNH-GS08
18-Jul-08
marking code diode u4
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PDF
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