DMN62D1SFB
Abstract: No abstract text available
Text: DMN62D1SFB 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS ADVANCE INFORMATION 60V Features and Benefits 2 RDS(on) Max ID Max @ TA = +25°C • Footprint of just 0.6mm – thirteen times smaller than SOT23 Low On-Resistance 1.4 @ VGS= 10V
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DMN62D1SFB
DS35252
DMN62D1SFB
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DMN62D1SFB
Abstract: No abstract text available
Text: DMN62D1SFB 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS on Max ID Max @ TA = +25C • Footprint of just 0.6mm – thirteen times smaller than SOT23 Low On-Resistance 1.4 @ VGS= 10V 0.41A Low Gate Threshold Voltage 1.6 @ VGS= 4.5V
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DMN62D1SFB
DS35252
DMN62D1SFB
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Untitled
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated DMN3730UFB4 30V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits • 0.4mm ultra low profile package for thin application 0.9A 0.6mm package footprint, 10 times smaller than SOT23 Low VGS th , can be driven directly from a battery
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DMN3730UFB4
AEC-Q101
DS35017
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Untitled
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated DMP21D0UFB4 20V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS -20V Features and Benefits RDS(on) ID @ TA = 25°C 495mΩ @ VGS = -4.5V -0.77A 690mΩ @ VGS = -2.5V -0.67A 960mΩ @ VGS = -1.8V -0.57A 2 Footprint of just 0.6mm – thirteen times smaller than SOT23
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DMP21D0UFB4
AEC-Q101
DS35279
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Untitled
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated DMP21D0UFB4 20V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS -20V Features and Benefits RDS(on) ID @ TA = 25°C 495mΩ @ VGS = -4.5V -0.77A 690mΩ @ VGS = -2.5V -0.67A 960mΩ @ VGS = -1.8V -0.57A 2 Footprint of just 0.6mm – thirteen times smaller than SOT23
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DMP21D0UFB4
AEC-Q101
DS35279
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G1 TRANSISTOR SOT 23 PNP
Abstract: No abstract text available
Text: MMBT5551 NPN General Purpose Transistor FEATURES • For switching and amplifier applications. • Complementary PNP Type Available MMBT5401 MECHANICAL DATA • Case: SOT-23 Plastic • Case material: “Green” molding compound, UL flammability classification 94V-0, (No Br. Sb. CI)
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MMBT5551
MMBT5401)
OT-23
2002/95/EC
OT-323
OT-523
G1 TRANSISTOR SOT 23 PNP
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APM 2513
Abstract: MARKING CODE ASX diode 431sg zener Marking code t92 FLYBACK F 0017 SHARP 431S Marking T92 SOT-23 PIN
Text: GM431S 2.5V ADJUSTABLE SHUNT REGULATOR Description Features The GM431S is a three terminal adjustable shunt regulator with a specified thermal stability guaranteed over temperature. The output voltage can be adjusted to any value between 2.5V VREF and 36V by using two external
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GM431S
GM431S
OT-23,
OT-89
100mA
431SR
OT-23
APM 2513
MARKING CODE ASX diode
431sg zener
Marking code t92
FLYBACK F 0017 SHARP
431S
Marking T92 SOT-23 PIN
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MARKING code GM SOT 23
Abstract: sot-23 MARKING CODE 431 as431 equivalent sot-23 MARKING RAB SOT 23 rac diode sot 23 marking code 431 LM431 SOT-23 TL431 sot-23 marking 431 TL431 sot89 marking TL431
Text: GM431 2.5V ADJUSTABLE SHUNT REGULATOR Description Features The GM431is a three terminal adjustable shunt regulator with thermal stability guaranteed over temperature. The output voltage can be adjusted to any value between 2.5V VREF and 18V by using two external resistors. The GM431 has a
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GM431
GM431is
GM431
GM431an
100mA
GM431V1
OT-23
OT-89
MARKING code GM SOT 23
sot-23 MARKING CODE 431
as431 equivalent
sot-23 MARKING RAB
SOT 23 rac diode
sot 23 marking code 431
LM431 SOT-23
TL431 sot-23 marking 431
TL431 sot89 marking
TL431
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431G
Abstract: TO-92 431G as431 equivalent DIODE MARKING CODE G1 SOT23 GM431AST23R sot 23 marking code 431 sot-23 MARKING CODE 431 LM431 SOT-23 marking code 336 sot-23 DIODE MARKING CODE G0 SOT23
Text: GM431 2.5V ADJUSTABLE SHUNT REGULATOR Description Features The GM431is a three terminal adjustable shunt regulator with thermal stability guaranteed over temperature. The output voltage can be adjusted to any value between 2.5V VREF and 32V by using two external resistors. The GM431 has a
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GM431
GM431is
GM431
GM431an
100mA
GM431V1
OT-23
OT-89
431G
TO-92 431G
as431 equivalent
DIODE MARKING CODE G1 SOT23
GM431AST23R
sot 23 marking code 431
sot-23 MARKING CODE 431
LM431 SOT-23
marking code 336 sot-23
DIODE MARKING CODE G0 SOT23
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431G
Abstract: Flyback Switching Power Supply
Text: 2.5V ADJUSTABLE SHUNT REGULATOR Description Features The GM431is a three terminal adjustable shunt regulator with thermal stability guaranteed over temperature. The output voltage can be adjusted to any value between 2.5V VREF and 18V by using two external resistors. The GM431 has a
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GM431is
GM431
GM431an
100mA
GM431V1
OT-23
OT-89
431G
Flyback Switching Power Supply
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Untitled
Abstract: No abstract text available
Text: GM431S 2.5V ADJUSTABLE SHUNT REGULATOR Description Features The GM431S is a three terminal adjustable shunt regulator with a specified thermal stability guaranteed over temperature. The output voltage can be adjusted to any value between 2.5V VREF and 36V by using two external
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GM431S
GM431S
100mA
ST23M:
J-STD-020.
900ppm
1500ppm
GM431SV2
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DFN3020B-8
Abstract: Marking G2 SOT23-6
Text: A Product Line of Diodes Incorporated ZXMN3AMC 30V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits • • • • • • • • ID max RDS on max V(BR)DSS TA = 25°C (Notes 4 & 7) 120mΩ @ VGS = 10V 3.7A 180mΩ @ VGS = 4.5V
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DFN3020B-8
DS35087
DFN3020B-8
Marking G2 SOT23-6
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Untitled
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated ZXMN3AMC 30V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits Product Summary • • • • • • • • ID max RDS on max V(BR)DSS TA = 25°C (Notes 4 & 7) 120mΩ @ VGS = 10V 3.7A 180mΩ @ VGS = 4.5V
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DFN3020B-8
DS35087
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Untitled
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated ZXMN2AMC 20V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits Product Summary • • • • • • • • ID max RDS on max V(BR)DSS TA = 25°C (Notes 4 & 7) 120mΩ @ VGS= 4.5V 3.7A 300mΩ @ VGS= 2.5V
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DFN3020B-8
DS35089
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SOT-23 MOSFET P-CHANNEL a1 1- mark
Abstract: No abstract text available
Text: Supertex inc. LP1030D 300V, Dual P-Channel Enhancement-Mode Lateral MOSFET Features General Description ►► 300V breakdown voltage ►► Integrated gate-to-source resistor ►► Integrated gate-to-source Zener diode ►► Low input capacitance ►► Fast switching speeds
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LP1030D
LP1030D
DSFP-LP1030D
A031414
SOT-23 MOSFET P-CHANNEL a1 1- mark
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SOT-23 MOSFET P-CHANNEL a1 1- mark
Abstract: L21e
Text: Supertex inc. LP1030D 300V, Dual P-Channel Enhancement-Mode Lateral MOSFET Features General Description The LP1030D is a dual high voltage P-channel enhancementmode normally-off lateral MOSFET. Each MOSFET has integrated gate-to-source resistor and gate-to-source Zener
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LP1030D
LP1030D
DSFP-LP1030D
NR011613
SOT-23 MOSFET P-CHANNEL a1 1- mark
L21e
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mark G1 SOT-23
Abstract: sot-23 MARKING CODE G1 G1 SOT23 sot-23 MARKING CODE IGs DSPD-5SOT23K1 LP1030
Text: Supertex inc. LP1030D 300V, Dual P-Channel Enhancement-Mode Lateral MOSFET Features General Description The LP1030D is a dual high voltage P-channel enhancementmode normally-off lateral MOSFETs. Each MOSFET has integrated gate-to-source resistor and gate-to-source Zener
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LP1030D
LP1030D
DSFP-LP1030D
NR101512
mark G1 SOT-23
sot-23 MARKING CODE G1
G1 SOT23
sot-23 MARKING CODE IGs
DSPD-5SOT23K1
LP1030
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IRF5852
Abstract: IRF5800 IRF5805 IRF5806 IRF5850 IRF5851 SI3443DV IRF5820
Text: PD - 93999A IRF5852 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge VDSS RDS on max (W) ID 20 V 0.090@VGS = 4.5V 0.120@VGS = 2.5V 2.7A 2.2A Description These N-channel MOSFETs from International Rectifier
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3999A
IRF5852
IRF5852
IRF5800
IRF5805
IRF5806
IRF5850
IRF5851
SI3443DV
IRF5820
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DFN3020B-8
Abstract: 2.7A SOT23-6
Text: A Product Line of Diodes Incorporated ZXMC3AMC 30V COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Features and Benefits • • • • • • • • ID max Device RDS on max V(BR)DSS TA = 25°C (Notes 4 & 7) Q1 120mΩ @ VGS = 10V 3.7A 180mΩ @ VGS = 4.5V
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DS35088
DFN3020B-8
2.7A SOT23-6
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Untitled
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated ZXMC3AMC 30V COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Features and Benefits Product Summary • • • • • • • • ID max Device RDS on max V(BR)DSS TA = 25°C (Notes 4 & 7) Q1 120mΩ @ VGS = 10V 3.7A 180mΩ @ VGS = 4.5V
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DS35088
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Untitled
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated DMN2300UFB4 20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits V BR DSS RDS(on) 20V 175mΩ @ VGS = 4.5V 240mΩ @ VGS = 2.5V 360mΩ @ VGS = 1.8V • • • • • • • • ID max TA = 25°C
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DMN2300UFB4
AEC-Q101
DS35269
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DMN62D1SFB
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated DMN62D1SFB 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary ADVANCE INFORMATION V BR DSS Features and Benefits RDS(on) Max ID Max @ TA = 25°C 1.4Ω @ VGS= 10V 0.41A 1.6Ω @ VGS= 4.5V 0.38A 60V Description and Applications
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DMN62D1SFB
AEC-Q101
DS35252
DMN62D1SFB
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Untitled
Abstract: No abstract text available
Text: Whol H EW LET T mL'fiM P A C K A R D Surface Mount PIN Diodes Technical Data HSMP-38XX and HSMP-48XX Series Features • Diodes Optimized for: Low Current Switching Low Distortion Attenuating Ultra-Low Distortion Switching Microwave Frequency Operation • Surface Mount SOT-23
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OCR Scan
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HSMP-38XX
HSMP-48XX
OT-23
RS-481,
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72T MARKING CODE
Abstract: MARKING MON sot-23 sot-23 MARKING CODE G1 43t SOT23 72t sot-23 sot-23 72t marking 43T mon marking sot-23
Text: Thnl mL'/ÏM HP AECWKLAERTDT Surface Mount PIN Diodes Technical Data HSMP-38XX and HSMP-48XX Series Features • Diodes Optimized for: Low Current Switching Low Distortion Attenuating Ultra-Low Distortion Switching Microwave Frequency Operation • Surface Mount SOT-23
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OCR Scan
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HSMP-38XX
HSMP-48XX
OT-23
5091-6211E
5091-9184E
72T MARKING CODE
MARKING MON sot-23
sot-23 MARKING CODE G1
43t SOT23
72t sot-23
sot-23 72t
marking 43T
mon marking sot-23
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