DIODE marking A2
Abstract: top side marking b2 CSPESD301 CSPESD301G CSPESD302 CSPESD302G CSPESD303 CSPESD303G
Text: CSPESD301/302/303 1, 2 and 3-Channel ESD Arrays in CSP Features Product Description • • The CSPESD301/302/303 is a family of 1, 2, and 3channel ESD protection arrays, which integrate two, three and four identical avalanche-style diodes. It is intended that one of these diodes is connected to GND
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CSPESD301/302/303
CSPESD301/302/303
CSPESD301
CSPESD302
CSPESD303
178mm
DIODE marking A2
top side marking b2
CSPESD301
CSPESD301G
CSPESD302
CSPESD302G
CSPESD303
CSPESD303G
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D6636
Abstract: No abstract text available
Text: STTH12004TV1 Ultrafast high voltage rectifier Table 1: Main product characteristics IF AV 2 x 60 A A1 K1 VRRM 400 V A2 K2 Tj (max) 150 °C VF (typ) 0.83 V trr (max) 50 ns K1 A1 K2 Features and benefits A2 c u d Ultrafast switching Low reverse current Low thermal resistance
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STTH12004TV1
STTH12004TV1
D6636
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STTA106
Abstract: STTA106U diodes STmicroelectronics marking T01 STTA106RL smb le C2631 marking ED smb
Text: STTA106/U TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS IF AV 1A VRRM 600V trr (typ) 20ns VF (max) 1.5V FEATURES AND BENEFITS • ■ ■ ■ c u d SPECIFIC TO FREEWHEEL MODE OPERATIONS : FREEWHEEL OR BOOSTER DIODE ULTRA-FAST AND SOFT RECOVERY
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STTA106/U
STTA106
STTA106U
diodes STmicroelectronics marking T01
STTA106RL
smb le
C2631
marking ED smb
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JESD97
Abstract: STTH120L04TV1
Text: STTH120L04TV1 Ultrafast high voltage rectifier Mian product characteristics IF AV 2 x 60 A VRRM 400 V Tj (max) 150° C VF (typ) 0.83 V trr (max) 50 ns Low reverse current ● Low thermal resistance ● Reduces switching and conduction losses ● Package insulation voltage: 2500 VRMS
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STTH120L04TV1
2006any
JESD97
STTH120L04TV1
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irf540
Abstract: IRF540 application irf540 mosfet control motor irf540 switch irf540 circuit diagram MOSFET IRF540 IRF540 Rg IRF540 mosfet with maximum VDS 30 V irf540 be IRF540 mosfet
Text: IRF540 N-CHANNEL 100V - 0.055 Ω - 22A TO-220 LOW GATE CHARGE STripFET II POWER MOSFET TYPE IRF540 • ■ ■ ■ ■ VDSS RDS on ID 100 V <0.077 Ω 22 A TYPICAL RDS(on) = 0.055Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE APPLICATION ORIENTED
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IRF540
O-220
irf540
IRF540 application
irf540 mosfet control motor
irf540 switch
irf540 circuit diagram
MOSFET IRF540
IRF540 Rg
IRF540 mosfet with maximum VDS 30 V
irf540 be
IRF540 mosfet
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STPS2530CG
Abstract: STPS2530CG-TR
Text: STPS2530C LOW DROP POWER SCHOTTKY RECTIFIER Table 1: Main Product Characteristics IF AV 2 x 12.5 A VRRM 30 V Tj 150°C VF(max) 0.45 V K FEATURES AND BENEFITS • ■ ■ ■ ■ Very small conduction losses Negligible switching losses Extremely fast switching
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STPS2530C
STPS2530CG
STPS2530CG-TR
STPS2530CG
STPS2530CG-TR
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Untitled
Abstract: No abstract text available
Text: Schottky Barrier Diode Twin Diode OUTLINE SG10SC4M Unit : mm Package I FTO-220G Weight 1.54g Typ> 40 V 10 A 4.5 Feature • Tj=i5(rc • Tj=150°C • P r r s m P K t? • P rrsm Rating • t ë ï i H Œ 2k V ( S I I • Full Molded • Dielectric Strength 2kV
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SG10SC4M
FTO-220G
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SG20LC20USM
Abstract: SG20LC20U
Text: Super Fast Recovery Diode Twin Diode OUTLINE SG20LC20USM 200V 20A Feature •i& y 'fx • • Low Noise trr=25ns • tnr=25ns • 7 1 1 ^ -1 0 K • Full Molded • Dielectric Strength 2kV 2kV S II Main Use • Switching Regulator • y ^ 'O n - n / • Fly W heel
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OCR Scan
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SG20LC20USM
FT0220G
J533-1
SG20LC20USM
SG20LC20U
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7S14H
Abstract: No abstract text available
Text: POWEREX INC U R m B 1SE E D T a m t a i 000345? C D 42 C D 47 X Powerex, Inc., Hlllls Street, Youngwood, Pennsylvania J5697 412 925-7272 Powerex Europe, S.A., 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 72.75.15 4 90 90 SCR/Diode POW-R-BLOK Modules
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J5697
BP107,
Amperes/100-1400
CD420890
MAX/10
7S14H
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300V-20A
Abstract: No abstract text available
Text: Super Fast Recovery Diode Twin Diode m tm DF20LC30 OUTLINE U nit-m m Package : STO-220 W eight 1.5g Typ 10.2 P y h fL ig -(ffl) 300V 20A Feature • SMD • SMD •e y -rx • Low Noise • trr=30ns • trr=30ns 4.7 Main Use • Switching Regulator >DC/DC n y t K —S
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DF20LC30
STO-220
300V-20A
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marking AFW
Abstract: SMD DIODE BOOK diode T3 Marking 20NC15 DF20NC15 smd marking 5G J532 smd diode marking 47
Text: Schottky Barrier Diode Twin Diode Mfm OUTLINE Package : STO-220 DF20NC15 Unit-m m Weight 1.5g Typ P y K L l°-(ffl) 10.2 15 0 V 2 0 A Feature • SM D ' SM D • <SlR=0.4mA 1Low lR=0.4mA 1Resistance for thermal run-away < IA Main Use >X ' f ' y 1Sw itching Regulator
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DF20NC15
STO-220
i50Hz
marking AFW
SMD DIODE BOOK
diode T3 Marking
20NC15
DF20NC15
smd marking 5G
J532
smd diode marking 47
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Untitled
Abstract: No abstract text available
Text: Super Fast Recovery Diode Twin Diode OUTLINE SF20LC40M Package : FTO-220A Unit:mm Weight lJ9g Typ> 400V 20A 4.5 Feature y i/= E -Ji F • m ttm s 2 kv ( s u • Full Molded • V f =1.3V • Low V f=1 .3V • Tj=150°C • • Tj=150°C • Dielectric Strength 2kV
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FTO-220A
SF20LC40M
J533-1)
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diode ep sod-323
Abstract: diode ep sod 323 STVD901J varicap marking v
Text: STVD901J VARICAP FEATURES AND BENEFITS n n n High capacitance ratio Tuned for 900 Mhz band in mobile phone Surface mount device A DESCRIPTION The STDV901J is a variable capacitance diode in SOD-323 package. This diode is intended to be used in mobile phone application to control the
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STVD901J
STDV901J
OD-323
OD-323
diode ep sod-323
diode ep sod 323
STVD901J
varicap marking v
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PART marking d2
Abstract: e2 marking EMI/RFI filter schematic diagram MO-229 Pi filter udfn UDFN-8 MO-229C P09E
Text: CM1609 LCD and Camera EMI Filter Array with ESD Protection Features • • • • • • Six and eight channels of EMI filtering with integrated ESD protection Pi-style EMI filters in a capacitor-resistor-capacitor C-R-C network ±15kV ESD protection on each channel
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CM1609
-35dB
12-lead
16-lead
12-lead:
16-lead:
MO-229C
16-Lead,
PART marking d2
e2 marking
EMI/RFI filter schematic diagram
MO-229
Pi filter
udfn
UDFN-8
P09E
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Untitled
Abstract: No abstract text available
Text: Schottky Barrier Diode Twin Diode mwm o u t lin e Package : STO-220 DF40SC3L U n ii I m m W e ig h t 30V 40A Date code ^ N Feature N . 0176 Control No. • SMD • SMD • SV f=0.45V • Low Vf=0.45V • P rrsm7’K 5 > ì ' i ® ì ì ì • PnnsM Rating
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STO-220
DF40SC3L
40SC3L
10000iâ
J532-1
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D 92 M - 02 DIODE
Abstract: JS marking diode c 92 M - 02 DIODE
Text: Schottky Barrier Diode Twin Diode mtm OUTLINE Package : STO-220 DF20PC3M PyhfLig- ffl Unit-mm Weight 1.5g(Typ) 10.2 30V 20A Feature • SM D • SMD • î 2 ® V f=0.4V • Ultra-Low V f=0.4V • High lo Rating -Small-PKG • iJ 'S = À l; jS î § M 4.7
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STO-220
DF20PC3M
D 92 M - 02 DIODE
JS marking diode
c 92 M - 02 DIODE
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Ceramic Capacitors 0.2UF 50V
Abstract: 0.2uf 50V Ceramic Capacitor DN007 Ceramic capacitor 0,2uF 50V CH10 CH11 PACDN007 ua712 Ceramic capacitor 0.2uF 50V
Text: PACDN007 18 Channel ESD Protection Array Features Product Description • • • Applications The PACDN007 is a diode array designed to provide 18 channels of ESD protection for electronic components or sub-systems. Each channel consists of a pair of diodes which steers the ESD current pulse either to the
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PACDN007
PACDN007
QSOP-24
Ceramic Capacitors 0.2UF 50V
0.2uf 50V Ceramic Capacitor
DN007
Ceramic capacitor 0,2uF 50V
CH10
CH11
ua712
Ceramic capacitor 0.2uF 50V
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L6PR
Abstract: STPR620CT diode l6 STPR620CF STPR620CFP
Text: STPR620CT/CF/CFP ULTRA FAST RECOVERY RECTIFIER DIODES MAIN PRODUCT CHARACTERISTICS IF AV 2x3A VRRM 200 V Tj(max) 150°C VF(max) 0.99 V trr(max) 30 ns A1 K A2 A2 FEATURES Suited for SMPS Low losses Low forward and reverse recovery time High surge current capability
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STPR620CT/CF/CFP
ISOWATT220AB
O-220FPAB
O-220AB
STPR620CT
ISOWATT220AB
STPR620CF
STPR620CFP
L6PR
STPR620CT
diode l6
STPR620CF
STPR620CFP
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Untitled
Abstract: No abstract text available
Text: £ ÿ j SGS-THOM SON noœilLIOraeQïlBCi STTA1512P/PI TURBOSWITCH ”A”. ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS I f a v 15A V rrm 1200V (typ) 55ns (max) 1.9V trr Vf PR ELIM IN A R Y DATA FEATURES AND BENEFITS • ULTRA-FAST, SOFT AND NOISE-FREE
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STTA1512P/PI
STTA1512P
STTA1512PI
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Untitled
Abstract: No abstract text available
Text: Supertex inc. HV2661 Low Charge Injection 24-Channel High Voltage Analog Switch Features General Description 24-channel high voltage analog switch 3.3 or 5.0V CMOS input logic level 3:1 MUX-deMUX with 8 states 20MHz data shift clock frequency HVCMOS technology for high performance
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HV2661
24-Channel
24-channel
20MHz
50MHz
-60dB
HV2661
DSFP-HV2661
NR010913
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Untitled
Abstract: No abstract text available
Text: Supertex inc. HV2661 Low Charge Injection 24-Channel High Voltage Analog Switch Features ►► ►► ►► ►► ►► ►► ►► ►► ►► ►► ►► ►► ►► 24-channel high voltage analog switch 3.3 or 5.0V CMOS input logic level 3:1 MUX-deMUX with 8 states
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24-Channel
20MHz
50MHz
-60dB
HV2661
HV2661
24-chann
DSFP-HV2661
NR010913
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1N4D02
Abstract: 0163f TS317 TS317CM TS317CP TS317CW TS317CZ U014 LADJ
Text: s TAIWAN TS317 SEMICONDUCTOR 3 -T e rm ina l A d ju sta b le P ositive V o lta g e R egulator pb RoHS COMPLIANCE TO-220 TO-263 TO-252 <D2PAK) 47 >s| m n SO T-223 (DPAK) : i 1 2 & : 12 3 Pin D e fin itio n : 1. Adjustable 2. Output 3. Input Heatsink is connected to Pin 2
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TS317
O-220
O-263
O-252
OT-223
TS317
O-220,
O-263,
O-252
1N4D02
0163f
TS317CM
TS317CP
TS317CW
TS317CZ
U014
LADJ
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Untitled
Abstract: No abstract text available
Text: Supertex inc. HV2761 Low Charge Injection, 24-Channel, High Voltage Analog Switch with Bleed Resistors Features General Description 24-channel high voltage analog switch Integrated bleed resistors on the outputs 3.3 or 5.0V CMOS input logic level 3:1 MUX-deMUX with 8 states
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HV2761
24-Channel,
24-channel
20MHz
50MHz
-60dB
DSFP-HV2761
NR010913
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Untitled
Abstract: No abstract text available
Text: Schottky Barrier Diode Twin Diode Wtm SF10SC4R 40V P ackage OUTLINE U nit-m m : F T O -2 2 0 W eight 1.9g Typ A 4.5 Feature • Tj=150°C • Tj=150°C • P r r s m Rating • Full Molded • Dielectric Strength 2kV • PRRSM T ’A ' i ^ V Î ' I ' K i E
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SF10SC4R
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