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    DIODE MARKING M7 Search Results

    DIODE MARKING M7 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE MARKING M7 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    TI43A

    Abstract: No abstract text available
    Text: ERC30 i .5A : Outline Drawings FAST RECOVERY DIODE A I Features • y * > 2 'X f c :- K a i # # c a t ' W ^ S uper high speed sw itchin g. tjz : Marking • te V F Ä 5-P-K: £ Color code : Orange Low Vp IS S JB S Abridged type name High reliability o •


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    ERC30 1995-9095t/R89 TI43A PDF

    Untitled

    Abstract: No abstract text available
    Text: 70-W206NBA600SA-M788L flowBOOST 4w 600V/600A Features FlowSCREW 4w ● Symmetrical Booster ● Integrated DC-capacitor ● Low DC Inductance <5nH ● Transient Interface for optional regeneration of switching losses ● Temperature Sensor Target Applications


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    70-W206NBA600SA-M788L 00V/600A PDF

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    Abstract: No abstract text available
    Text: 70-W206NBA400SA-M786L flowBOOST 4w 600V/400A Features FlowSCREW 4w ● Symmetrical Booster ● Integrated DC-capacitor ● Low DC Inductance <5nH ● Transient Interface for optional regeneration of switching losses ● Temperature Sensor Target Applications


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    70-W206NBA400SA-M786L 00V/400A PDF

    5B05

    Abstract: No abstract text available
    Text: SIEMENS AK TIENGE SEL LSCHAF M7E D fl53SbGS 0D573A2 2 • SIEG SIEM ENS SFH 435 GaAs INFRARED EMITTER DOUBLE EMITTING DIODE * Diametrical Radiation * High Pulse Handling Capability * Good Spectral Matching with Silicon Photodetectors DESCRIPTION The SFH 435 is a two-beam GaAs infrared


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    fl53SbGS 0D573A2 B23SbOS 5B05 PDF

    TSSOP14

    Abstract: 74hc132y
    Text: M74HC132 Quad 2-input Schmitt NAND gate Datasheet - production data • Wide operating voltage range: VCC opr = 2 V to 6 V • Pin and function compatible with 74 series 132 SO14 TSSOP14 • ESD performance – HBM: 2 kV – MM: 200 V – CDM: 1 kV Description


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    M74HC132 TSSOP14 M74HC132 M74HC00. DocID1896 TSSOP14 74hc132y PDF

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    Abstract: No abstract text available
    Text: M74HC4094 8-bit SIPO shift latch register 3-state Datasheet - production data Applications • Automotive • Industrial • Computer SO16 TSSOP16 • Consumer Description Features • High speed: fMAX = 80 MHz (typ.) at VCC = 6 V • Low power dissipation:


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    M74HC4094 TSSOP16 M74HC4094 DocID1972 PDF

    3160-FH

    Abstract: LDR1101 2885 light emission diodes LR 3160 LDG5171 S53S E7500 GLB2885 OLB2685 YLB2785
    Text: SIEMENS AKTIEN6ESELL SCHAF M7E D • S23SbDS 002710T b « S I E G SIEM EN S SUPER-RED YELLOW GREEN OLB 2685 YLB 2785 GLB 2885 UGHTBARS Package Dimensions in Inches mm r PiN FUNCTION 80 (ZO 32) MAX. Anode b 1 40 ( 1015 ) (8 89} MAX Canea*t> Gatoder UMIC ArodeS


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    6235bOS YLB2785 2685/YLB 2785/GLB 3160-FH LDR1101 2885 light emission diodes LR 3160 LDG5171 S53S E7500 GLB2885 OLB2685 PDF

    Untitled

    Abstract: No abstract text available
    Text: M74HC126 Quad bus buffer 3-state Datasheet - production data • Balanced propagation delays: tPLH ≅ tPHL • Wide operating voltage range: VCC (opr) = 2 V to 6 V • Pin and function compatible with 74 series 126 SO14 TSSOP14 Features • ESD performance


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    M74HC126 TSSOP14 M74HC126 DocID8021 PDF

    74HC28

    Abstract: No abstract text available
    Text: M74HC280 9-bit parity generator Datasheet - production data • Pin and function compatible with 74 series 280 • ESD performance – HBM: 2 kV – MM: 200 V – CDM: 1 kV SO14 TSSOP14 Description The M74HC280 is a high-speed CMOS 9-bit parity generator fabricated with silicon gate


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    M74HC280 TSSOP14 M74HC280 DocID1938 74HC28 PDF

    Untitled

    Abstract: No abstract text available
    Text: M74HC365 Hex bus buffer with 3-state outputs non-inverting Datasheet - production data • Pin and function compatible with 74 series 365 SO16 TSSOP16 • ESD performance – HBM: 2 kV – MM: 200 V – CDM: 1 kV Description The M74HC365 is an advanced high-speed


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    M74HC365 TSSOP16 M74HC365 DocID1948 PDF

    M74HC14 equivalent

    Abstract: m74hc14rm13tr
    Text: M74HC14 Hex Schmitt inverter Datasheet - production data • Wide operating voltage range: VCC opr = 2 to 6 V • Pin and function compatible with 74 series 14 SO14 • ESD performance – CDM: 1 kV – HBM: 2 kV – MM: 200 V TSSOP14 Features Description


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    M74HC14 TSSOP14 M74HC14 M74HC04 DocID1901 M74HC14 equivalent m74hc14rm13tr PDF

    tssop16 package drawing

    Abstract: No abstract text available
    Text: M74HC365 Hex bus buffer with 3-state outputs non-inverting Datasheet - production data • Balanced propagation delays: tPLH ≅ tPHL • Wide operating voltage range: VCC (opr) = 2 V to 6 V • Pin and function compatible with 74 series 365 SO16 TSSOP16


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    M74HC365 TSSOP16 M74HC365 DocID1948 tssop16 package drawing PDF

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    Abstract: No abstract text available
    Text: M74HC4094 8-bit SIPO shift latch register 3-state Datasheet - production data Applications • Automotive • Industrial • Computer SO16 DIP16 TSSOP16 • Consumer Description Features • High speed: fMAX = 80 MHz (typ.) at VCC = 6 V • Low power dissipation:


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    M74HC4094 DIP16 TSSOP16 M74HC4094 DocID1972 PDF

    10V 50mA zero voltage switch

    Abstract: Mosfet 1 cell switch low voltage low resistance
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate MOSFET M7002NND03 MOSFET N-Channel D WBFBP-03B (1.2x1.2×0.5) unit: mm DESCRIPTION TOP High cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching


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    WBFBP-03B M7002NND03 WBFBP-03B 400mA 500mA 200mA 115mA, width300s, 500mA 10V 50mA zero voltage switch Mosfet 1 cell switch low voltage low resistance PDF

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    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03A Plastic-Encapsulate MOSFETS M7002TTD03 MOSFET N-Channel D WBFBP-03A (1.6x1.6×0.5) unit: mm DESCRIPTION TOP High cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching


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    WBFBP-03A M7002TTD03 WBFBP-03A 400mA 200mA 115mA, 250mA 500mA 500mA PDF

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    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate MOSFETS M7002NND03 MOSFET N-Channel D WBFBP-03B (1.2x1.2×0.5) unit: mm DESCRIPTION TOP High cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching


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    WBFBP-03B M7002NND03 WBFBP-03B 400mA 500mA 200mA 115mA, 500mA PDF

    m74hc4060rm13tr

    Abstract: No abstract text available
    Text: M74HC4060 14-stage binary counter/oscillator Datasheet - production data Applications • Automotive • Industrial SO16 • Computer TSSOP16 • Consumer Description Features The M74HC4060 device is a high speed CMOS 14-stage binary counter/oscillator fabricated with


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    M74HC4060 14-stage TSSOP16 M74HC4060 DocID1967 m74hc4060rm13tr PDF

    AEC Q100

    Abstract: No abstract text available
    Text: M74HC4852 Dual 4:1 channel analog MUX/DEMUX with injection current protection Datasheet − production data Features • Low power dissipation – ICC = 2 µA max. at TA = 25 °C ■ Injection current protection: VΔout < 1 mV at VCC = 5 V, IIN = 1 mA, RS = 3.9 kΩ


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    M74HC4852 SO-16 M74HC4852 AEC Q100 PDF

    M74HC04B1

    Abstract: No abstract text available
    Text: M74HC04 Hex inverter Datasheet - production data Description The M74HC04 is a high-speed CMOS hex inverter manufactured using silicon gate C2MOS technology. DIP14 SO14 TSSOP14 Features The internal circuit is composed of 3 stages including a buffer output which enables high noise


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    M74HC04 M74HC04 DIP14 TSSOP14 DocID001882 M74HC04B1 PDF

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    Abstract: No abstract text available
    Text: M74HC08 Quad dual-input and gate Datasheet - production data Description The M74HC08 is a high-speed CMOS quad dual2 input and gate fabricated with silicon gate C MOS technology. SOP14 TSSOP14 The internal circuit is composed of two stages including a buffer output which enables high


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    M74HC08 M74HC08 TSSOP14 DocID001885 PDF

    Untitled

    Abstract: No abstract text available
    Text: 10-F112M3A025SH-M746F09 10-FY12M3A025SH-M746F08 datasheet flow3xMNPC 1 1200V/25A Features flow1 housing ● 3 phase mixed voltage component topology ● neutral point clamped inverter ● reactive power capability 12 mm ● low inductance layout Target Applications


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    10-F112M3A025SH-M746F09 10-FY12M3A025SH-M746F08 200V/25A PDF

    Untitled

    Abstract: No abstract text available
    Text: 10-FY12M3A040SH-M749F08 10-F112M3A040SH-M749F09 flow3xMNPC 1 1200V/40A Features flow1 housing ● 3 phase mixed voltage component topology ● neutral point clamped inverter ● reactive power capability 12 mm ● low inductance layout Target Applications


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    10-FY12M3A040SH-M749F08 10-F112M3A040SH-M749F09 200V/40A PDF

    Untitled

    Abstract: No abstract text available
    Text: M74HC4060 14-stage binary counter/oscillator Datasheet - production data Applications • Automotive  Industrial  Computer 3',3 62 76623  Consumer Description The M74HC4060 device is a high speed CMOS 14-stage binary counter/oscillator fabricated with


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    M74HC4060 14-stage M74HC4060 DocID1967 PDF

    74HC4851Y

    Abstract: No abstract text available
    Text: M74HC4851 Single 8-channel analog MUX/DEMUX with injection current protection Datasheet − production data Features • Low power dissipation – ICC = 2 A max. at TA = 25 °C ■ Injection current protection – VΔOUT < 1 mV at VCC = 5 V, IIN ≤ 1 mA


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    M74HC4851 SO-16 TSSOP16 M74HC4851 74HC4851Y PDF