siemens siferrit N27
Abstract: Siferrit N67 UU CORE 100-turn u cores UI N27
Text: U, UI and UR Cores General Information 1 Core shapes and materials U and I cores are made of SIFERRIT materials N27, N53, N62, N67 and now new, of N82. Owing to their high saturation flux density, high Curie temperature and low dissipation losses, they are suitable for power, pulse and high-voltage transformers in particular line deflection transformers and
|
Original
|
100-turn
mT/100
Hz/100
siemens siferrit N27
Siferrit N67
UU CORE
u cores
UI N27
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR N2500N SWITCHING N-CHANNEL MOSFET PACKAGE DRAWING Unit: mm DESCRIPTION The N2500N is N-channel MOS Field Effect Transistor designed 0.4 +0.1 –0.05 0.16 +0.1 –0.06 +0.1 0.65 –0.15 for DC-DC converter and 2.5 V drive switching applications.
|
Original
|
N2500N
N2500N
SC-96)
N2500N-T1B-AT
N2500N-T2B-AT
|
PDF
|
marking ya
Abstract: N2500N-T1B-AT
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR N2500N SWITCHING N-CHANNEL MOSFET PACKAGE DRAWING Unit: mm DESCRIPTION The N2500N is N-channel MOS Field Effect Transistor designed for DC-DC converter and 2.5 V drive switching applications. 0.16 +0.1 –0.06 +0.1
|
Original
|
N2500N
N2500N
SC-96)
M8E0909E)
marking ya
N2500N-T1B-AT
|
PDF
|
SOT1118
Abstract: PMCPB5530X NXP SMD TRANSISTOR MARKING CODE s1
Text: 020 -6 PMCPB5530X DF N2 20 V, complementary Trench MOSFET Rev. 1 — 26 June 2012 Product data sheet 1. Product profile 1.1 General description Complementary N/P-channel enhancement mode Field-Effect Transistor FET in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic
|
Original
|
PMCPB5530X
DFN2020-6
OT1118)
SOT1118
PMCPB5530X
NXP SMD TRANSISTOR MARKING CODE s1
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SANKEN ELECTRIC CO., LTD. SJPZ-N27 1. Scope The present specifications shall apply to an SJPZ-N27. 2. Outline Type Silicon Diode Structure Resin Molded Applications Over Voltage Absorption 3. Flammability UL94V-0 Equivalent 090615 1／4 SANKEN ELECTRIC CO., LTD.
|
Original
|
SJPZ-N27.
SJPZ-N27
UL94V-0
|
PDF
|
9930gm
Abstract: AP9930GM DEVICE MARKING p1g marking code P1D 9930G P2d MARKING CODE n-channel so8 60v
Text: AP9930GM RoHS-compliant Product Advanced Power Electronics Corp. 2N AND 2P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement ▼ Low On-resistance ▼ Full Bridge Application on N-CH BVDSS P2G N2D/P2D RDS ON P1S/P2S P1G N1S/N2S LCD Monitor Inverter
|
Original
|
AP9930GM
9930GM
9930gm
AP9930GM
DEVICE MARKING p1g
marking code P1D
9930G
P2d MARKING CODE
n-channel so8 60v
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Advanced Power Electronics Corp. AP9930AGM-HF-3 Quad Complementary N and P-channel Enhancement-mode Power MOSFETs Simple Drive Requirement P2G N2D/P2D P1S/P2S Low On-resistance N-CH P1G Full Bridge Applications RoHS-compliant, halogen-free SO-8 N2G N1S/N2S
|
Original
|
AP9930AGM-HF-3
AP9930AGM-HF-3
AP9930A
9930AGM
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Advanced Power Electronics Corp. AP9930GM-HF-3 Quad Complementary N and P-channel Enhancement-mode Power MOSFETs Simple Drive Requirement P2G N2D/P2D P1S/P2S Low On-resistance N-CH P1G Full Bridge Applications RoHS-compliant, halogen-free SO-8 N2G N1S/N2S
|
Original
|
AP9930GM-HF-3
AP9930GM-HF-3
AP9930
9930GM
|
PDF
|
NXP SMD TRANSISTOR MARKING CODE s1
Abstract: No abstract text available
Text: DF N2 020 -6 PMDPB760EN 100 V, dual N-channel Trench MOSFET 29 May 2013 Objective data sheet 1. General description Dual N-channel enhancement mode Field-Effect Transistor FET in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using
|
Original
|
PMDPB760EN
DFN2020-6
OT1118)
NXP SMD TRANSISTOR MARKING CODE s1
|
PDF
|
N2576XG-3
Abstract: LM2576G N2576SG sem 2005 N2576G N2576TG-3.3 1N5822 N2576 SVR 681
Text: NIKO-SEM 52 KHz 3A Step-Down Switching Voltage Regulator SVR N2576G-3.3 TO-220, TO263 Lead-Free GENERAL DESCRIPTION FEATURES The N2576G Series switching voltage regulators (SVR) are monolithic integrated circuits that provide all the active functions for a step-down (buck) switching regulator,
|
Original
|
N2576G-3
O-220,
N2576G
Feb-02-2005
O-263
N2576XG-3
LM2576G
N2576SG
sem 2005
N2576TG-3.3
1N5822
N2576
SVR 681
|
PDF
|
N2596SG-5
Abstract: nikos N2596 N2596XG N2596G N2596SG LM2596 Application LM2596 1N5822 N2596G-5
Text: 150 KHz 3A Step-Down Switching NIKO-SEM Voltage Regulator SVR -Preliminary N2596G-5 TO-220, TO263 GENERAL DESCRIPTION FEATURES The N2596 Series switching voltage regulators (SVR) are monolithic integrated circuits that provide all the active functions for a step-down (buck) switching regulator,
|
Original
|
N2596G-5
O-220,
N2596
MAY-03-2004
O-263
N2596SG-5
nikos
N2596XG
N2596G
N2596SG
LM2596
Application LM2596
1N5822
N2596G-5
|
PDF
|
N2576T-5
Abstract: nikos N2576-3 SVR 681 N2576T-3.3 1N5822 LM2576 N2576 N2576S N2576S-5
Text: 52 KHz 3A Step-Down Switching Voltage Regulator SVR NIKO-SEM N2576-3.3 TO-220, TO263 GENERAL DESCRIPTION FEATURES The N2576 Series switching voltage regulators (SVR) are monolithic integrated circuits that provide all the active functions for a step-down (buck) switching regulator,
|
Original
|
N2576-3
O-220,
N2576
MAY-31-2001
O-263
N2576T-5
nikos
SVR 681
N2576T-3.3
1N5822
LM2576
N2576S
N2576S-5
|
PDF
|
DFN2020-6
Abstract: No abstract text available
Text: 020 -6 PMDPB55XP DF N2 20 V, dual P-channel Trench MOSFET Rev. 3 — 4 June 2012 Product data sheet 1. Product profile 1.1 General description Dual P-channel enhancement mode Field-Effect Transistor FET in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using
|
Original
|
PMDPB55XP
DFN2020-6
OT1118)
DFN2020-6
|
PDF
|
NXP SMD TRANSISTOR MARKING CODE s1
Abstract: No abstract text available
Text: 020 -6 PMDPB58UPE DF N2 20 V dual P-channel Trench MOSFET Rev. 1 — 19 June 2012 Product data sheet 1. Product profile 1.1 General description Dual small-signal P-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic
|
Original
|
PMDPB58UPE
DFN2020-6
OT1118)
NXP SMD TRANSISTOR MARKING CODE s1
|
PDF
|
|
|
Untitled
Abstract: No abstract text available
Text: MD -6 PMPB20EN DF N2 020 30 V N-channel Trench MOSFET Rev. 1 — 16 May 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench
|
Original
|
PMPB20EN
DFN2020MD-6
OT1220)
|
PDF
|
NXP SMD TRANSISTOR MARKING CODE s1
Abstract: No abstract text available
Text: 020 -6 PMDPB56XN DF N2 30 V, dual N-channel Trench MOSFET Rev. 1 — 16 May 2012 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor FET in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using
|
Original
|
PMDPB56XN
DFN2020-6
OT1118)
NXP SMD TRANSISTOR MARKING CODE s1
|
PDF
|
diode smd marking code 76
Abstract: diode smd marking T2 smd diode marking 79 smd diode marking codes diode marking table smd diode marking T2 DIODE SMD CODE MARKING s7 diode marking n2 diode marking 76 marking code n2 rf
Text: 1PSxSB17 4 V, 30 mA low Cd Schottky barrier diode 1. Product profile 1.1 General description Planar low capacitance Schottky barrier diode encapsulated in a very small SMD plastic package. Table 1: Product overview Type number Package Configuration Philips
|
Original
|
1PSxSB17
1PS66SB17
OT666
1PS76SB17
OD323
SC-76
1PS79SB17
OD523
SC-79
diode smd marking code 76
diode smd marking T2
smd diode marking 79
smd diode marking codes
diode marking table
smd diode marking T2
DIODE SMD CODE MARKING s7
diode marking n2
diode marking 76
marking code n2 rf
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 020 -6 PMDPB70XPE DF N2 20 V dual P-channel Trench MOSFET Rev. 1 — 20 June 2012 Product data sheet 1. Product profile 1.1 General description Dual small-signal P-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic
|
Original
|
PMDPB70XPE
DFN2020-6
OT1118)
|
PDF
|
marking code 1L
Abstract: NXP MARKING 1l
Text: 020 -6 PMDPB42UN DF N2 20 V, dual N-channel Trench MOSFET Rev. 1 — 16 May 2012 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor FET in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using
|
Original
|
PMDPB42UN
DFN2020-6
OT1118)
marking code 1L
NXP MARKING 1l
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 020 -6 PMDPB85UPE DF N2 20 V dual P-channel Trench MOSFET Rev. 1 — 20 June 2012 Product data sheet 1. Product profile 1.1 General description Dual small-signal P-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic
|
Original
|
PMDPB85UPE
DFN2020-6
OT1118)
|
PDF
|
N2576SG-5
Abstract: N2576TG-5 N2576SG regulator n2576tg-5 n2576g-5 N2576TG TO-263s smps isolated 12v output N2576XG-5 switching regulator 12v 3A
Text: 52 KHz 3A Step-Down Switching Voltage Regulator SVR NIKO-SEM N2576G-5 TO-220, TO263 Lead-Free GENERAL DESCRIPTION FEATURES The N2576 Series switching voltage regulators (SVR) are monolithic integrated circuits that provide all the active functions for a step-down (buck) switching regulator,
|
Original
|
N2576G-5
O-220,
N2576
MAY-21-2004
O-263
N2576SG-5
N2576TG-5
N2576SG
regulator n2576tg-5
n2576g-5
N2576TG
TO-263s
smps isolated 12v output
N2576XG-5
switching regulator 12v 3A
|
PDF
|
nikos
Abstract: N2576T-5 N2576-5 SVR 681 n2576s LM257 N2576 N2576T-5 equivalent N2576S-5 1N5822
Text: NIKO-SEM 52 KHz 3A Step-Down Switching Voltage Regulator SVR N2576-5 TO-220, TO263 GENERAL DESCRIPTION FEATURES The N2576 Series switching voltage regulators (SVR) are monolithic integrated circuits that provide all the active functions for a step-down (buck) switching regulator,
|
Original
|
N2576-5
O-220,
N2576
MAY-31-2001
O-263
nikos
N2576T-5
N2576-5
SVR 681
n2576s
LM257
N2576T-5 equivalent
N2576S-5
1N5822
|
PDF
|
TRANSISTOR SMD MARKING CODE QR
Abstract: MOSFET TRANSISTOR SMD MARKING CODE NA MOSFET TRANSISTOR SMD MARKING CODE 11
Text: DF N2 020 -6 PMC85XP 30 V P-channel MOSFET with pre-biased NPN transistor 15 May 2013 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in Trench MOSFET technology and NPN Resistor-Equipped Transistor (RET) together in a leadless medium
|
Original
|
PMC85XP
DFN2020-6
OT1118)
TRANSISTOR SMD MARKING CODE QR
MOSFET TRANSISTOR SMD MARKING CODE NA
MOSFET TRANSISTOR SMD MARKING CODE 11
|
PDF
|
diode smd marking SOD323 5-6
Abstract: 1PS76SB17 data sheet for all smd components marking code n2 rf 1PS66SB17 1PS79SB17 SC-76 marking code 4 SC-79 DETECTOR diode SC-79
Text: 1PSxSB17 4 V, 30 mA low Cd Schottky barrier diode Rev. 06 — 4 April 2005 Product data sheet 1. Product profile 1.1 General description Planar low capacitance Schottky barrier diode encapsulated in a very small SMD plastic package. Table 1: Product overview
|
Original
|
1PSxSB17
1PS66SB17
OT666
1PS76SB17
OD323
SC-76
1PS79SB17
OD523
SC-79
diode smd marking SOD323 5-6
1PS76SB17
data sheet for all smd components
marking code n2 rf
1PS66SB17
1PS79SB17
SC-76
marking code 4 SC-79
DETECTOR diode SC-79
|
PDF
|
