BAS19
Abstract: BAS19LT1 BAS20 BAS20LT1 BAS21 BAS21LT1 sot23 marking JR
Text: BAS19LT1, BAS20LT1, BAS21LT1 Preferred Devices High Voltage Switching Diode • Device Marking: BAS19LT1 = JP http://onsemi.com Device Marking: BAS20LT1 = JR Device Marking: BAS21LT1 = JS HIGH VOLTAGE SWITCHING DIODE 3 CATHODE MAXIMUM RATINGS Rating Symbol
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BAS19LT1,
BAS20LT1,
BAS21LT1
BAS19LT1
BAS20LT1
BAS19
BAS20
BAS21
r14525
BAS19
BAS19LT1
BAS20
BAS20LT1
BAS21
BAS21LT1
sot23 marking JR
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BAS19LT1
Abstract: sot-23 MARKING CODE JS BAS19 BAS20 BAS20LT1 BAS21 BAS21LT1 SOT23 Marking JX marking 556c
Text: BAS19LT1, BAS20LT1, BAS21LT1 Preferred Devices High Voltage Switching Diode • Device Marking: BAS19LT1 = JP http://onsemi.com Device Marking: BAS20LT1 = JR Device Marking: BAS21LT1 = JS HIGH VOLTAGE SWITCHING DIODE 3 CATHODE MAXIMUM RATINGS Rating Symbol
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BAS19LT1,
BAS20LT1,
BAS21LT1
BAS19LT1
BAS20LT1
BAS19
BAS20
BAS21
r14525
BAS19LT1
sot-23 MARKING CODE JS
BAS19
BAS20
BAS20LT1
BAS21
BAS21LT1
SOT23 Marking JX
marking 556c
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BAS20HT1
Abstract: marking code js sod323
Text: BAS20HT1 Preferred Device High Voltage Switching Diode • Device Marking: JS http://onsemi.com HIGH VOLTAGE SWITCHING DIODE MAXIMUM RATINGS Symbol Rating Value Unit VR Continuous Reverse Voltage 250 Vdc IF Peak Forward Current 200 mAdc Peak Forward Surge Current
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BAS20HT1
r14525
BAS20HT1/D
BAS20HT1
marking code js sod323
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BAS21HT1
Abstract: marking code js sod323 diode marking code js sod323
Text: BAS21HT1 Preferred Device High Voltage Switching Diode • Device Marking: JS http://onsemi.com HIGH VOLTAGE SWITCHING DIODE MAXIMUM RATINGS Symbol Rating Value Unit VR Continuous Reverse Voltage 250 Vdc IF Peak Forward Current 200 mAdc Peak Forward Surge Current
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BAS21HT1
r14525
BAS21HT1/D
BAS21HT1
marking code js sod323 diode
marking code js sod323
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BAS21HT1
Abstract: No abstract text available
Text: BAS21HT1 Preferred Device High Voltage Switching Diode • Device Marking: JS http://onsemi.com HIGH VOLTAGE SWITCHING DIODE MAXIMUM RATINGS Symbol Rating Value Unit VR Continuous Reverse Voltage 250 Vdc IF Peak Forward Current 200 mAdc 625 mAdc Max Unit 200
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BAS21HT1
r14153
BAS21HT1/D
BAS21HT1
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29 0826
Abstract: L05 SOT23 marking code L05 SOT 23 sot-23 diode marking t3 SL05 SL05T1 SL05T3 SL15T1 SL15T3 SL24
Text: SL05T1 Series 300 Watt, SOT-23 Low Capacitance TVS for High Speed Line Protections This new family of TVS offers transient overvoltage protection with significantly reduced capacitance. The capacitance is lowered by integrating a compensating diode in series. This integrated solution
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SL05T1
OT-23
r14525
SL05T1/D
29 0826
L05 SOT23
marking code L05 SOT 23
sot-23 diode marking t3
SL05
SL05T3
SL15T1
SL15T3
SL24
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marking code L05 SOT 23
Abstract: MARKING L05 marking l05 sot-23 SL05T1-D L05 SOT-23 sot-23 DIODE marking code t3
Text: SL05T1 Series 300 Watt, SOT-23 Low Capacitance TVS for High Speed Line Protections This new family of TVS offers transient overvoltage protection with significantly reduced capacitance. The capacitance is lowered by integrating a compensating diode in series. This integrated solution
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SL05T1
OT-23
r14525
SL05T1/D
marking code L05 SOT 23
MARKING L05
marking l05 sot-23
SL05T1-D
L05 SOT-23
sot-23 DIODE marking code t3
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MARKING L05
Abstract: sot-23 MARKING CODE NC tvs MARKING CODE LAYOUT SOT23 marking code L05 SOT 23
Text: SL05T1 Series 300 Watt, SOT-23 Low Capacitance TVS for High Speed Line Protections This new family of TVS offers transient overvoltage protection with significantly reduced capacitance. The capacitance is lowered by integrating a compensating diode in series. This integrated solution
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SL05T1
OT-23
r14525
SL05T1/D
MARKING L05
sot-23 MARKING CODE NC
tvs MARKING CODE LAYOUT SOT23
marking code L05 SOT 23
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SL05
Abstract: SL05T1 SL05T3 SL15T1 SL15T3 SL24 SL24T1 SL24T3 two line ESD Protection in SOT-23 TVS in SOT-23
Text: SL05T1 Series 300 Watt, SOT-23 Low Capacitance TVS for High Speed Line Protections This new family of TVS offers transient overvoltage protection with significantly reduced capacitance. The capacitance is lowered by integrating a compensating diode in series. This integrated solution
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SL05T1
OT-23
r14525
SL05T1/D
SL05
SL05T3
SL15T1
SL15T3
SL24
SL24T1
SL24T3
two line ESD Protection in SOT-23
TVS in SOT-23
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U840 diode motorola
Abstract: motorola u860 diode DIODE u1560 b2045 aka u1560 DIODE u860 diode u1560 diode U3J U820 diode fast recovery diode ses5001
Text: DL151/D Rev. 3, Nov-2000 Rectifier Device Data Rectifier Device Data DL151/D Rev. 3, Oct–2000 SCILLC, 2000 Previous Edition 1995 “All Rights Reserved’’ This book presents technical data for ON Semiconductor’s broad line of rectifiers. Complete specifications are provided in
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DL151/D
Nov-2000
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U840 diode motorola
motorola u860 diode
DIODE u1560
b2045 aka
u1560 DIODE
u860 diode
u1560
diode U3J
U820 diode
fast recovery diode ses5001
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diode marking r14
Abstract: DIODE MARKING CODE SOT236 DIODE T7 marking
Text: 05150 SRV05-4 Only One Name Means ProTek’Tion ultra low capacitance steering diode/tvs array Description The SRV05-4 is a dual USB port protection array that features ultra low capacitance. This device can be used in applications such as video cards, SMART phones, Gigabit Ethernet and other computer interfaces. Designed for ESD
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SRV05-4
SRV05-4
OT-23-6
diode marking r14
DIODE MARKING CODE SOT236
DIODE T7 marking
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Untitled
Abstract: No abstract text available
Text: EMIF09-SD01F3 IPAD 9 line EMI filter and ESD protection Main application • Secure digital memory card in mobile phones and communication systems Description The EMIF09-SD01F3 is a highly integrated array designed to suppress EMI/RFI noise for secure digital memory cards. The EMIF09-SD01F3 is in a
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EMIF09-SD01F3
EMIF09-SD01F3
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b2545
Abstract: B2545P MBR2545CTP
Text: MBR2545CTP SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Guardring for Stress Protection • Low Forward Voltage • 150°C Operating Junction Temperature
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MBR2545CTP
B2545P
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b2545
B2545P
MBR2545CTP
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B1545P
Abstract: b1545 MBR1545CTP
Text: MBR1545CTP SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • • • • • Center–Tap Configuration Guardring for Stress Protection
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MBR1545CTP
B1545P
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B1545P
b1545
MBR1545CTP
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b16100
Abstract: MBR16100CT
Text: MBR16100CT SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • • • • • • • • 16 Amps Total 8.0 Amps Per Diode Leg Guard–Ring for Stress Protection
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MBR16100CT
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MBR16100CT/D
b16100
MBR16100CT
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B4015L
Abstract: MBR4015CTL
Text: MBR4015CTL SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • • • • • • Center–Tap Configuration Guardring for Stress Protection
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MBR4015CTL
r14525
MBR4015CTL/D
B4015L
MBR4015CTL
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B1545P
Abstract: mbr1545ctp
Text: MBR1545CTP SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • • • • • Center–Tap Configuration Guardring for Stress Protection
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MBR1545CTP
B1545P
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MBR1545CTP/D
B1545P
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MBR6045WT
Abstract: No abstract text available
Text: MBR6045WT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction – Terminals 1 and 3 May Be Connected for
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MBR6045WT
r14525
MBR6045WT/D
MBR6045WT
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B3045
Abstract: 1N5817 2N2222 2N6277 MBR3045PT
Text: MBR3045PT Preferred Device SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Dual Diode Construction — Terminals 1 and 3 may be Connected for
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MBR3045PT
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MBR3045PT/D
B3045
1N5817
2N2222
2N6277
MBR3045PT
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3063B
Abstract: ic 3063B IRAM136-3063B IRAM136-3023B IRAM136-3063B2 IC OF 8873 free
Text: PD-97288 RevC Integrated Power Hybrid IC for High Voltage Motor Applications IRAM136-3063B Series 30A, 600V with Internal Shunt Resistor Description International Rectifier's IRAM136-3063B is a 30A, 600V Integrated Power Hybrid IC with Internal Shunt Resistor for Appliance Motor Drives applications such air conditioning systems and compressor drivers as
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PD-97288
IRAM136-3063B
AN-1049
3063B
ic 3063B
IRAM136-3023B
IRAM136-3063B2
IC OF 8873 free
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Untitled
Abstract: No abstract text available
Text: PD-97288 RevC Integrated Power Hybrid IC for High Voltage Motor Applications IRAM136-3063B Series 30A, 600V with Internal Shunt Resistor Description International Rectifier's IRAM136-3063B is a 30A, 600V Integrated Power Hybrid IC with Internal Shunt Resistor for Appliance Motor Drives applications such air conditioning systems and compressor drivers as
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PD-97288
IRAM136-3063B
IRAM136-3063B
AN-1049
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b20100
Abstract: MBR20100CTP b20100p B2010 diode device data on semiconductor
Text: MBR20100CTP SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • • • • • • • • 20 Amps Total 10 Amps per Diode Leg Guardring for Stress Protection
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MBR20100CTP
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b20100
MBR20100CTP
b20100p
B2010
diode device data on semiconductor
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R750
Abstract: R756 MR756 R758 mr760 DIODE MR750 MR751 MR752 MR754 MR760
Text: MR750 SERIES MR754 and MR760 are Preferred Devices High Current Lead Mounted Rectifiers • Current Capacity Comparable to Chassis Mounted Rectifiers • Very High Surge Capacity • Insulated Case http://onsemi.com Mechanical Characteristics: • Case: Epoxy, Molded
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MR750
MR754
MR760
MR751
MR752
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MR750/D
R750
R756
MR756
R758
mr760 DIODE
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B3045
Abstract: MBR3045ST
Text: MBR3045ST Preferred Device SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a platinum barrier metal. This state–of–the–art device has the following features: • Dual Diode Construction — Terminals 1 and 3 May Be Connected
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MBR3045ST
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MBR3045ST/D
B3045
MBR3045ST
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