DIODE marking S6 57
Abstract: DIODE marking S4 57 smd diode code s1 96 GMM3x60-015X1 DIODE marking S6 96 smd diode .S6 22 smd diode S4 96 smd diode g6 Control of Starter-generator S4 DIODE
Text: GMM3x60-015X1 Three phase full Bridge VDSS = 150 V = 57 A ID25 RDSon typ. = 17 mW with Trench MOSFETs in DCB isolated high current package L1+ L2+ G1 G3 G5 S1 S3 S5 L1 L2 G4 G6 G2 S2 L3+ L3 S4 S6 L1- L2- L3- Applications MOSFETs Conditions Maximum Ratings
|
Original
|
GMM3x60-015X1
IF110
ID110
3x60-015X1
3x60-015X1
DIODE marking S6 57
DIODE marking S4 57
smd diode code s1 96
GMM3x60-015X1
DIODE marking S6 96
smd diode .S6 22
smd diode S4 96
smd diode g6
Control of Starter-generator
S4 DIODE
|
PDF
|
SMD mosfet MARKING code TC
Abstract: smd diode g6 SMD MARKING CODE s4 IF110 diode L2 smd smd diode code g3 smd diode code g6 smd diode marking code L2 Control of Starter-generator DIODE marking S6 57
Text: GMM3x60-015X2 Three phase full Bridge VDSS = 150 V = 57 A ID25 RDSon typ. = 17 mW with Trench MOSFETs in DCB isolated high current package L1+ L2+ G1 G3 G5 S1 S3 S5 L1 L2 G4 G6 G2 S2 L3+ L3 S4 S6 L1- L2- L3- Applications MOSFETs Conditions Maximum Ratings
|
Original
|
GMM3x60-015X2
IF110
ID110
3x60-015X2
3x60-015X2
SMD mosfet MARKING code TC
smd diode g6
SMD MARKING CODE s4
IF110
diode L2 smd
smd diode code g3
smd diode code g6
smd diode marking code L2
Control of Starter-generator
DIODE marking S6 57
|
PDF
|
smd diode g6
Abstract: marking G3 IF110 GMM3x60-015X1
Text: GMM3x60-015X1 Three phase full Bridge VDSS = 150 V = 57 A ID25 RDSon typ. = 17 mW with Trench MOSFETs in DCB isolated high current package L1+ L2+ G1 G3 G5 S1 S3 S5 L1 L2 G4 G6 G2 S2 L3+ L3 S4 S6 L1- L2- L3- Applications MOSFETs Conditions Maximum Ratings
|
Original
|
GMM3x60-015X1
IF110
ID110
3x60-015X1
3x60-015X1
smd diode g6
marking G3
IF110
GMM3x60-015X1
|
PDF
|
DIODE marking S4 77
Abstract: smd diode marking 77 marking s4 resistor DIODE S4 77 diode S4 SMD smd marking rd BAP70-02 DIODE marking S4 marking 77 diode MARKING 54 "Pin Diode"
Text: Diodes SMD Type Silicon PIN diode BAP70-02 SOD-523 +0.05 0.3-0.05 Unit: mm +0.1 1.2-0.1 +0.05 0.8-0.05 Features + +0.1 0.6-0.1 - High voltage, current controlled RF resistor for attenuators +0.1 1.6-0.1 Low diode capacitance 0.77max +0.05 0.1-0.02 0.07max
|
Original
|
BAP70-02
OD-523
77max
07max
DIODE marking S4 77
smd diode marking 77
marking s4 resistor
DIODE S4 77
diode S4 SMD
smd marking rd
BAP70-02
DIODE marking S4
marking 77 diode
MARKING 54 "Pin Diode"
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Diodes SMD Type Product specification BAP70-02 SOD-523 +0.05 0.3-0.05 Unit: mm +0.1 1.2-0.1 +0.05 0.8-0.05 Features + +0.1 0.6-0.1 - High voltage, current controlled RF resistor for attenuators +0.1 1.6-0.1 Low diode capacitance 0.77max +0.05 0.1-0.02 0.07max
|
Original
|
BAP70-02
OD-523
77max
07max
|
PDF
|
72284
Abstract: No abstract text available
Text: LM94 www.ti.com SNAS264C – APRIL 2006 – REVISED MARCH 2013 LM94 TruTherm Hardware Monitor with PI Loop Fan Control for Server Management Check for Samples: LM94 FEATURES 1 • • • 23 • • • • • • • • • • • • • • • •
|
Original
|
SNAS264C
13-step
72284
|
PDF
|
72284
Abstract: No abstract text available
Text: LM94 www.ti.com SNAS264C – APRIL 2006 – REVISED MARCH 2013 LM94 TruTherm Hardware Monitor with PI Loop Fan Control for Server Management Check for Samples: LM94 FEATURES 1 • • • 23 • • • • • • • • • • • • • • • •
|
Original
|
SNAS264C
13-step
72284
|
PDF
|
72284
Abstract: No abstract text available
Text: LM96194 www.ti.com SNAS360B – MARCH 2007 – REVISED MARCH 2013 LM96194 TruTherm Hardware Monitor with PI Fan Control for Workstation Management Check for Samples: LM96194 FEATURES 1 • ΣΔ ADC Architecture • Monitors 9 Power Supplies • Monitors 4 Remote Thermal Diodes and 2
|
Original
|
LM96194
SNAS360B
LM96194
13-step
72284
|
PDF
|
200WX75GD
Abstract: No abstract text available
Text: MTI 200WX75GD Three phase full Bridge VDSS = 75 V ID25 = 260 A RDSon typ. = 1.1 mW with Trench MOSFETs in DCB isolated high current package Part number MTI200WX75GD L1+ T1 T3 L2+ G1 G3 G5 S1 S3 S5 L1 T2 L3+ T5 L2 T4 L3 T6 G2 G4 G6 S2 S4 S6 L1- L2- L3- Features / Advantages:
|
Original
|
200WX75GD
MTI200WX75GD
20140507a
200WX75GD
|
PDF
|
marking code C4 Sot 23-5
Abstract: EIAJ-SC74A sot23-5 marking code LDC MAX828 Marking C4 SOT23-5 INVERTER 10kW sot 23-5 mark c2 marking code AC sot 23-5 1N4148 1N5817
Text: MAX828 MAX829 Switched Capacitor Voltage Converters The MAX828/829 are CMOS “charge–pump” voltage converters in ultra–small SOT–23 5 lead packages. They invert and/or double an input voltage which can range from +1.5V to +5.5V. Conversion efficiency is typically >95%. Switching frequency is 12kHz for the
|
Original
|
MAX828
MAX829
MAX828/829
12kHz
35kHz
MAX829.
MAX828)
MAX829)
marking code C4 Sot 23-5
EIAJ-SC74A
sot23-5 marking code LDC
Marking C4 SOT23-5
INVERTER 10kW
sot 23-5 mark c2
marking code AC sot 23-5
1N4148
1N5817
|
PDF
|
MC14008B
Abstract: DIODE S4 74 CD4008B MC14008BCP MC14008BDR2 MC14008BF A42A3
Text: MC14008B 4-Bit Full Adder The MC14008B 4–bit full adder is constructed with MOS P–channel and N–channel enhancement mode devices in a single monolithic structure. This device consists of four full adders with fast internal look–ahead carry output. It is useful in binary addition and
|
Original
|
MC14008B
MC14008B
CD4008B
r14525
MC14008B/D
DIODE S4 74
CD4008B
MC14008BCP
MC14008BDR2
MC14008BF
A42A3
|
PDF
|
TY 8016 thyristor
Abstract: melcher psk 1220 Melcher AM 1000 melcher psk 20 thyristor mod TT 105 N M1070 melcher psk 1216
Text: PSK-Family Switching Regulators 19" Industrial Environment Positive Switching Regulators PSK-Family No input to output isolation Single output of 5.1,12,15,24 or 36 V DC/80.720 W Input voltage up to 80 V OC • Wide input voltage range • High efficiency up to 96%
|
OCR Scan
|
DC/80.
TY 8016 thyristor
melcher psk 1220
Melcher AM 1000
melcher psk 20
thyristor mod TT 105 N
M1070
melcher psk 1216
|
PDF
|
NTGS4141NT1G
Abstract: No abstract text available
Text: NTGS4141N Power MOSFET 30 V, 7.0 A, Single N−Channel, TSOP−6 Features • Low RDS on • Low Gate Charge • Pb−Free Package is Available http://onsemi.com Applications V(BR)DSS • Load Switch • Notebook PC • Desktop PC ID MAX RDS(on) TYP 21.5 mW @ 10 V
|
Original
|
NTGS4141N
NTGS4141N/D
NTGS4141NT1G
|
PDF
|
mc14008
Abstract: CD4008B MC14008B MC14008BCP MC14008BDR2 MC14008BF circuit diagram of full adder circuit using nor g 14008
Text: MC14008B 4-Bit Full Adder The MC14008B 4–bit full adder is constructed with MOS P–channel and N–channel enhancement mode devices in a single monolithic structure. This device consists of four full adders with fast internal look–ahead carry output. It is useful in binary addition and
|
Original
|
MC14008B
MC14008B
CD4008B
r14525
MC14008B/D
mc14008
CD4008B
MC14008BCP
MC14008BDR2
MC14008BF
circuit diagram of full adder circuit using nor g
14008
|
PDF
|
|
|
SMD DIODE gp 817
Abstract: BA591 PHILIPS DIODE smd marking A1 "MARKING CODE A1" BP317 GP 821 gp 213 smd diode
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D049 BA591 Band-switching diode Product specification Supersedes data of 1998 Aug 18 1998 Aug 31 Philips Semiconductors Product specification Band-switching diode BA591 FEATURES DESCRIPTION • Very small plastic SMD package
|
Original
|
M3D049
BA591
BA591
OD323
MAM406
SCA60
115104/00/02/pp8
SMD DIODE gp 817
PHILIPS DIODE smd marking A1
"MARKING CODE A1"
BP317
GP 821
gp 213 smd diode
|
PDF
|
IRF1010
Abstract: IRFBC40LC 3S4M
Text: International i»R Rectifier IRFBC40LC HEXFET Power MOSFET • • • • • • Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V Vgs Rating Reduced C ss. Coss, Crss Extremely High Frequency Operation Repetitive Avalanche Rated V d ss
|
OCR Scan
|
IRFBC40LC
O-22D-AS
O-22QAB
IRF1010
D-S380
963064i
IRFBC40LC
3S4M
|
PDF
|
NTGS4141N
Abstract: NTGS4141NT1G NTGS4141NT1
Text: NTGS4141N Power MOSFET 30 V, 7.0 A, Single N−Channel, TSOP−6 Features • Low RDS on • Low Gate Charge • Pb−Free Package is Available http://onsemi.com Applications V(BR)DSS • Load Switch • Notebook PC • Desktop PC ID MAX RDS(on) TYP 21.5 mW @ 10 V
|
Original
|
NTGS4141N
NTGS4141N/D
NTGS4141N
NTGS4141NT1G
NTGS4141NT1
|
PDF
|
50904
Abstract: No abstract text available
Text: GMM 3x180-004X2 Three phase full Bridge VDSS = 40 V = 180 A ID25 RDSon typ. = 1.9 mW with Trench MOSFETs in DCB isolated high current package Preliminary data L1+ L2+ G1 G3 G5 S1 S3 S5 L1 L2 G4 G6 G2 S2 L3+ L3 S4 S6 L1- L2- L3- Applications MOSFETs Symbol
|
Original
|
3x180-004X2
ID110
IF110
20100713a
50904
|
PDF
|
Untitled
Abstract: No abstract text available
Text: GMM 3x180-004X2 VDSS = 40 V = 180 A ID25 RDSon typ. = 1.9 mΩ Three phase full Bridge with Trench MOSFETs in DCB isolated high current package Preliminary data L1+ L2+ G1 G3 G5 S1 S3 S5 L1 L2 G4 G6 G2 S2 L3+ L3 S4 S6 L1- L2- L3- Applications MOSFETs Symbol
|
Original
|
3x180-004X2
ID110
IF110
20110307b
|
PDF
|
SMD MARKING 541 DIODE
Abstract: smd diode 708 BA792 Diode smd code 805 SOD110 S4 SMD diode mark MCC SMD DIODE SMD MARK CODE s4 BP317 diode marking code 777
Text: DISCRETE SEMICONDUCTORS DATA SHEET L8 book, halfpage M3D178 BA792 Band-switching diode Product specification 1996 Mar 13 Philips Semiconductors Product specification Band-switching diode BA792 FEATURES • Ceramic SMD package • Low diode capacitance: max. 1.1 pF
|
Original
|
M3D178
BA792
MAM139
OD110)
OD110
SCDS47
113061/1100/01/pp8
SMD MARKING 541 DIODE
smd diode 708
BA792
Diode smd code 805
SOD110
S4 SMD diode mark
MCC SMD DIODE
SMD MARK CODE s4
BP317
diode marking code 777
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PD-9.1068 In te rn atio n al Rectifier_ 1RF740LC HEXFET Power MOSFET • • • • • • Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V Vgs Rating Reduced Ciss, Cos& Crss Extremely High Frequency Operation Repetitive Avalanche Rated
|
OCR Scan
|
1RF740LC
D-6380
Q021S61
|
PDF
|
NTL4502N
Abstract: NTL4502NT1
Text: NTL4502N Quad Power MOSFET 24 V, 15 A, N−Channel, PInPAKt Package Features • Four N−Channel MOSFETs in a Single Package • High Drain Current Up to 80A per Device, Single Pulse tp < 10 µs, • • • • • • • • RqJC = 1.5 °C/W High Input Impedance for Ease of Drive
|
Original
|
NTL4502N
NTL4502N/D
NTL4502N
NTL4502NT1
|
PDF
|
NTGS4141NT1G
Abstract: NTGS4141N NTGS4141NT1
Text: NTGS4141N Power MOSFET 30 V, 7.0 A, Single N−Channel, TSOP−6 Features • Low RDS on • Low Gate Charge • Pb−Free Package is Available http://onsemi.com Applications RDS(on) TYP V(BR)DSS • Load Switch • Notebook PC • Desktop PC ID MAX 21.5 mW @ 10 V
|
Original
|
NTGS4141N
NTGS4141N/D
NTGS4141NT1G
NTGS4141N
NTGS4141NT1
|
PDF
|
f9530n
Abstract: No abstract text available
Text: ft V- International ZOR Rectifier pd-m«» IR F9530N preliminary HEXFET^ Power MOSFET • • • • • • • Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated
|
OCR Scan
|
F9530N
O-220
f9530n
|
PDF
|
