Untitled
Abstract: No abstract text available
Text: SCHOTTKY DIODE ARRAY ISSU E 1 - AUGUST 1996 DEVICE DESCRIPTION FEATURES The SDA32 Schottky Barrier Diode Array is designed to reduce reflection noise on high speed parallel data lines. • Reduced reflection noise The device helps suppress transients caused
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SDA32
DIL20
200mA
SDA32
DIL20
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SDA32N20
Abstract: DIL-20 DIL20 SDA32 SDA32D20 SO20 DSA003654
Text: SCHOTTKY DIODE ARRAY SDA32 ISSUE 2 – JANUARY 1998 DEVICE DESCRIPTION FEATURES The SDA32 Schottky Barrier Diode Array is designed to reduce reflection noise on high speed parallel data lines. • • The device helps suppress transients caused by transmission line reflections, cross talk and
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SDA32
SDA32
200mA
DIL20
DIL20
SDA32N20
SDA32N20
DIL-20
SDA32D20
SO20
DSA003654
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smd diode marking FG
Abstract: f15jc10
Text: Schottky Barrier Diode Twin Diode M fm OUTLINE Package : STO-220 D F15J C 10 Unit-m m W e ig h t 1.5g Typ 10.2 100 V 15A Feature • SMD • -fg| = 0 . 6mA • SMD • SiyRTÈÎEiËcI l_y(<_<LU'' • Resistance for thermal run-away • High lo Rating-Small-RKG
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STO-220
smd diode marking FG
f15jc10
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DIODE N20
Abstract: DAP222M DAP202K DAP202U DAP222 N-Type Switching diode 4 DA227 DAN202K DAN202U
Text: DAN222M/DAN222/DAN202U/DAN202K DAP222M/DAP222/DAP202U/DAP202K DA227 Diodes Switching diode DAN222M / DAN222 / DAN202U / DAN202K DAP222M / DAP222 / DAP202U / DAP202K DA227 1 (3) 0.32±0.05 1.2±0.1 0.13±0.05 +0.1 0.3 −0.05 ROHM : VMD3 EIAJ : JEDEC : 0.15 +
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DAN222M/DAN222/DAN202U/DAN202K
DAP222M/DAP222/DAP202U/DAP202K
DA227
DAN222M
DAN222
DAN202U
DAN202K
DAP222M
DAP222
DAP202U
DIODE N20
DAP202K
N-Type
Switching diode 4
DA227
DAN202K
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MARKING N20 SOT-343
Abstract: DAN202K equivalent DAN202K DAN212K DAP202K DA114 DA121 DA227 DAN202U DAN222
Text: DA114/DA121 /DA227/DAN202K/DAN202U DAN212K/DAN222/DAP202K/DAP202U/DAP222 Diodes Ultra high-speed switching diode arrays DA114 / DA121 / DA227 DAN202K / DAN202U / DAN212K / DAN222 DAP202K / DAP202U / DAP222 •A p p lica tio n s • External dim ensions Units : mm
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DA114/DA121
/DA227/DAN202K/DAN202U
DAN212K/DAN222/DAP202K/DAP202U/DAP222
DA114
DA121
DA227
DAN202K
DAN202U
DAN212K
DAN222
MARKING N20 SOT-343
DAN202K equivalent
DAP202K
DA227
DAN222
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DAN202K
Abstract: DAP202K DAP202U DAP222 da2271 DA227 DAN202U DAN222 DAN222M DAP222M
Text: DAN222M/DAN222/DAN202U/DAN202K DAP222M/DAP222/DAP202U/DAP202K DA227 Diodes Switching diode DAN222M / DAN222 / DAN202U / DAN202K DAP222M / DAP222 / DAP202U / DAP202K DA227 1 (3) 0.32±0.05 1.2±0.1 0~0.1 0.15 + − 0.05 ROHM : EMD3 EIAJ : SC - 75 JEDEC : SOT - 416
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DAN222M/DAN222/DAN202U/DAN202K
DAP222M/DAP222/DAP202U/DAP202K
DA227
DAN222M
DAN222
DAN202U
DAN202K
DAP222M
DAP222
DAP202U
DAN202K
DAP202K
da2271
DA227
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N20E
Abstract: on semiconductor marking n20e 369D AN569 MTD6N20E MTD6N20E1 MTD6N20ET4 6n20e
Text: MTD6N20E Preferred Device Power MOSFET 6 Amps, 200 Volts N-Channel DPAK This advanced Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain-to-source diode with a fast
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MTD6N20E
MTD6N20E/D
N20E
on semiconductor marking n20e
369D
AN569
MTD6N20E
MTD6N20E1
MTD6N20ET4
6n20e
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Untitled
Abstract: No abstract text available
Text: ITF86116SQT TM Data Sheet 10A, 30V, 0.012 Ohm, N-Channel, Logic Level, Power MOSFET Packaging TSSOP8 File Number 4808.3 Features • Ultra Low On-Resistance - rDS ON = 0.012Ω, VGS = 10V - rDS(ON) = 0.016Ω, VGS = 4.5V • Gate to Source Protection Diode
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ITF86116SQT
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DAP202K
Abstract: DAN202K
Text: DAN202K/DAP202K/DAN202U/DAP202U/DAN212K — K / D io d e s DA106K/DA106U/DA112/DA113/DA114/DA115 DA116/DA118/DA119/DAN202K/DAP202K DAN202U/DAP202U/DAN212K Silicon Epitaxial Planar Ultra-High Speed Switching Diode Arrays
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DA112/DA113/DA114/DA115/DA116/DA118/DA119
DAN202K/DAP202K/DAN202U/DAP202U/DAN212K
DA106K/DA106U/DA112/DA113/DA114/DA115
DA116/DA118/DA119/DAN202K/DAP202K
DAN202U/DAP202U/DAN212K
DA106K/DA116/DA118/DA119
AP202K
DAP202K
DAN202K
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AN7254
Abstract: AN7260 ITF86116SQT ITF86116SQT2 TB370 86116
Text: ITF86116SQT Data Sheet 10A, 30V, 0.012 Ohm, N-Channel, Logic Level, Power MOSFET Packaging TSSOP8 File Number 4808.2 Features • Ultra Low On-Resistance - rDS ON = 0.012Ω, VGS = 10V - rDS(ON) = 0.016Ω, VGS = 4.5V • Gate to Source Protection Diode • Simulation Models
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ITF86116SQT
8611ements
AN7254
AN7260
ITF86116SQT
ITF86116SQT2
TB370
86116
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AN7254
Abstract: AN7260 ITF86174SQT ITF86174SQT2 TB370
Text: ITF86174SQT Data Sheet 9A, 30V, 0.016 Ohm, P-Channel, Logic Level, Power MOSFET Packaging TSSOP-8 Features • Ultra Low On-Resistance - rDS ON = 0.016Ω, VGS = −10V - rDS(ON) = 0.024Ω, VGS = −4.5V - rDS(ON) = 0.027Ω, VGS = −4V • Gate to Source Protection Diode
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ITF86174SQT
AN7254
AN7260
ITF86174SQT
ITF86174SQT2
TB370
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4533G
Abstract: atmel 912 QFN20 T7024 T7024-PGPM T7024-TRQY T7024-TRSY Thermal Junction to Case for QFN20 ATMEL QFN20
Text: Features • • • • • • • • Single 3-V Supply Voltage High Power-added Efficient Power Amplifier Pout Typically 23 dBm Ramp-controlled Output Power Low-noise Preamplifier (NF Typically 2.1 dB) Biasing for External PIN Diode T/R Switch Current-saving Standby Mode
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PSSO20
QFN20
T7024
T7024
4533G
atmel 912
T7024-PGPM
T7024-TRQY
T7024-TRSY
Thermal Junction to Case for QFN20
ATMEL QFN20
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diagram sony lcd tv
Abstract: POWER AMPLIFIER CIRCUIT DIAGRAM 10000 QFN20 T7024 T7024-PGP T7024-TRQ T7024-TRS QFN-20
Text: Features • • • • • • • • Single 3-V Supply Voltage High Power-added Efficient Power Amplifier Pout Typically 23 dBm Ramp-controlled Output Power Low-noise Preamplifier (NF Typically 2.1 dB) Biasing for External PIN Diode T/R Switch Current-saving Standby Mode
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PSSO20
QFN20
T7024
T7024
4533F
diagram sony lcd tv
POWER AMPLIFIER CIRCUIT DIAGRAM 10000
T7024-PGP
T7024-TRQ
T7024-TRS
QFN-20
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ICT7024
Abstract: No abstract text available
Text: Features • • • • • • • • Single 3-V Supply Voltage High Power-added Efficient Power Amplifier Pout Typically 23 dBm Ramp-controlled Output Power Low-noise Preamplifier (NF Typically 2.1 dB) Biasing for External PIN Diode T/R Switch Current-saving Standby Mode
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PSSO20
QFN20
T7024
T7024
4533C
ICT7024
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1N6227
Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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SMD diode DB3
Abstract: SMD diode N20 SMD diode DB6 8c 617 transistor AD7545JN AD7545KN AD7545SQ AD7545TQ DB10 AD7545
Text: a CMOS 12-Bit Buffered Multiplying DAC AD7545 FEATURES 12-Bit Resolution Low Gain TC: 2 ppm/؇C typ Fast TTL Compatible Data Latches Single +5 V to +15 V Supply Small 20-Lead 0.3" DIP and 20-Terminal Surface Mount Packages Latch Free Schottky Protection Diode Not Required
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12-Bit
AD7545
12-Bit
20-Lead
20-Terminal
AD7545
P-20A
SMD diode DB3
SMD diode N20
SMD diode DB6
8c 617 transistor
AD7545JN
AD7545KN
AD7545SQ
AD7545TQ
DB10
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adlh0032cg
Abstract: AD544L AD7545 SMD diode N20 AD7545CQ AD584J ADLH0032 DB10 AD7545AQ AD7545BQ
Text: a CMOS 12-Bit Buffered Multiplying DAC AD7545 FEATURES 12-Bit Resolution Low Gain TC: 2 ppm/؇C typ Fast TTL Compatible Data Latches Single +5 V to +15 V Supply Small 20-Lead 0.3" DIP and 20-Terminal Surface Mount Packages Latch Free Schottky Protection Diode Not Required
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12-Bit
AD7545
12-Bit
20-Lead
20-Terminal
AD7545
adlh0032cg
AD544L
SMD diode N20
AD7545CQ
AD584J
ADLH0032
DB10
AD7545AQ
AD7545BQ
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76404DK8
Abstract: HUFA76404DK8T RG103 KP108
Text: HUFA76404DK8T N-Channel Dual MOSFET 62V, 3.2A, 132mΩ Features Applications rDS ON = 110mΩ (Typ.), VGS = 5V, ID = 3.2A Motor / Body Load Control Qg(tot) = 3.8nC (Typ.), VGS = 5V ABS Systems Low Miller Charge Powertrain Management Low QRR Body Diode
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HUFA76404DK8T
HUFA76404DK8T
76404DK8
RG103
KP108
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c5088 transistor
Abstract: transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N
Text: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154
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1853IMPATT
c5088 transistor
transistor C3207
TLO84CN
sec c5088
IN5355B
D2817A
C3207 transistor
toshiba f630
TLO81CP
MC74HC533N
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Untitled
Abstract: No abstract text available
Text: MTD6N20E Power MOSFET 6 A, 200 V, N−Channel DPAK This advanced Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain−to−source diode with a fast recovery time. Designed for low voltage, high speed switching
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MTD6N20E
MTD6N20E/D
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Untitled
Abstract: No abstract text available
Text: MTD6N20E Power MOSFET 6 A, 200 V, N−Channel DPAK This advanced Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain−to−source diode with a fast recovery time. Designed for low voltage, high speed switching
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MTD6N20E
MTD6N20E/D
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FDN363N
Abstract: N6 marking diode marking n9
Text: Preliminary FDN363N N-Channel PowerTrench MOSFET 100V, 1A, 240mΩ Features Applications • r DS ON = 200mΩ (Typ.), VGS = 10V, ID = 1A • DC/DC converters • Qg(tot) = 4nC (Typ.), VGS = 10V • Low Miller Charge • Low QRR Body Diode • UIS Capability (Single Pulse and Repetitive Pulse)
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FDN363N
250oC/W
FDN363N
N6 marking diode
marking n9
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new bright R288-2
Abstract: 24c08an new bright R288 ac14g ICS950405 CADIN14 K8T800 y532 quanta PHD108NQ03LT
Text: 5 4 3 2 1 ZI5 SYSTEM BLOCK DIAGRAM H/W MONITOR D THERMAL DIODE IN 200/266/333MHZ AMD Althon 64 P3 DDR DIMM P3, 4 DC/DC SMDDR_VTERM BOM mark ＊:no stuff P@:with PR stuff ＊@:with PR no stuff 19V IN P27,28 D DDR DIMM HyperTransport Link Y2-14.318MHz Y1-27MHz
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200/266/333MHZ
Y1-27MHz
Y2-14
318MHz
ICS950405
M10/M11
K8T800
Y5-32
768MHz
266/533MB/s
new bright R288-2
24c08an
new bright R288
ac14g
ICS950405
CADIN14
K8T800
y532
quanta
PHD108NQ03LT
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ESJC01-12B
Abstract: uef 160 HIGH VOLTAGE DIODE 12kv 350ma ESJC01 ESJC01-09B
Text: ESJC01 9 k V , 1 2 k V s ± ' J ' i i i i r<i i - K ¡6JES3lE$r' ' i =t—K • fl-JK'+ ji : Outline Drawings HIGH VOLTAGE SILICON DIODE ESJC01 li , * t t W # « s * S ! * ) IS iE - ^ K M » C E S iilt i, 'f ! j - K T t o ESJC01 is high reliability and high current capability type
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ESJC01
30MIN.
ESJC01-09B
ESJC01-12B
uef 160
HIGH VOLTAGE DIODE 12kv 350ma
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