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    DIODE N20 Search Results

    DIODE N20 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE N20 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: SCHOTTKY DIODE ARRAY ISSU E 1 - AUGUST 1996 DEVICE DESCRIPTION FEATURES The SDA32 Schottky Barrier Diode Array is designed to reduce reflection noise on high speed parallel data lines. • Reduced reflection noise The device helps suppress transients caused


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    SDA32 DIL20 200mA SDA32 DIL20 PDF

    SDA32N20

    Abstract: DIL-20 DIL20 SDA32 SDA32D20 SO20 DSA003654
    Text: SCHOTTKY DIODE ARRAY SDA32 ISSUE 2 – JANUARY 1998 DEVICE DESCRIPTION FEATURES The SDA32 Schottky Barrier Diode Array is designed to reduce reflection noise on high speed parallel data lines. • • The device helps suppress transients caused by transmission line reflections, cross talk and


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    SDA32 SDA32 200mA DIL20 DIL20 SDA32N20 SDA32N20 DIL-20 SDA32D20 SO20 DSA003654 PDF

    smd diode marking FG

    Abstract: f15jc10
    Text: Schottky Barrier Diode Twin Diode M fm OUTLINE Package : STO-220 D F15J C 10 Unit-m m W e ig h t 1.5g Typ 10.2 100 V 15A Feature • SMD • -fg| = 0 . 6mA • SMD • SiyRTÈÎEiËcI l_y(<_<LU'' • Resistance for thermal run-away • High lo Rating-Small-RKG


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    STO-220 smd diode marking FG f15jc10 PDF

    DIODE N20

    Abstract: DAP222M DAP202K DAP202U DAP222 N-Type Switching diode 4 DA227 DAN202K DAN202U
    Text: DAN222M/DAN222/DAN202U/DAN202K DAP222M/DAP222/DAP202U/DAP202K DA227 Diodes Switching diode DAN222M / DAN222 / DAN202U / DAN202K DAP222M / DAP222 / DAP202U / DAP202K DA227 1 (3) 0.32±0.05 1.2±0.1 0.13±0.05 +0.1 0.3 −0.05 ROHM : VMD3 EIAJ : JEDEC : 0.15 +


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    DAN222M/DAN222/DAN202U/DAN202K DAP222M/DAP222/DAP202U/DAP202K DA227 DAN222M DAN222 DAN202U DAN202K DAP222M DAP222 DAP202U DIODE N20 DAP202K N-Type Switching diode 4 DA227 DAN202K PDF

    MARKING N20 SOT-343

    Abstract: DAN202K equivalent DAN202K DAN212K DAP202K DA114 DA121 DA227 DAN202U DAN222
    Text: DA114/DA121 /DA227/DAN202K/DAN202U DAN212K/DAN222/DAP202K/DAP202U/DAP222 Diodes Ultra high-speed switching diode arrays DA114 / DA121 / DA227 DAN202K / DAN202U / DAN212K / DAN222 DAP202K / DAP202U / DAP222 •A p p lica tio n s • External dim ensions Units : mm


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    DA114/DA121 /DA227/DAN202K/DAN202U DAN212K/DAN222/DAP202K/DAP202U/DAP222 DA114 DA121 DA227 DAN202K DAN202U DAN212K DAN222 MARKING N20 SOT-343 DAN202K equivalent DAP202K DA227 DAN222 PDF

    DAN202K

    Abstract: DAP202K DAP202U DAP222 da2271 DA227 DAN202U DAN222 DAN222M DAP222M
    Text: DAN222M/DAN222/DAN202U/DAN202K DAP222M/DAP222/DAP202U/DAP202K DA227 Diodes Switching diode DAN222M / DAN222 / DAN202U / DAN202K DAP222M / DAP222 / DAP202U / DAP202K DA227 1 (3) 0.32±0.05 1.2±0.1 0~0.1 0.15 + − 0.05 ROHM : EMD3 EIAJ : SC - 75 JEDEC : SOT - 416


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    DAN222M/DAN222/DAN202U/DAN202K DAP222M/DAP222/DAP202U/DAP202K DA227 DAN222M DAN222 DAN202U DAN202K DAP222M DAP222 DAP202U DAN202K DAP202K da2271 DA227 PDF

    N20E

    Abstract: on semiconductor marking n20e 369D AN569 MTD6N20E MTD6N20E1 MTD6N20ET4 6n20e
    Text: MTD6N20E Preferred Device Power MOSFET 6 Amps, 200 Volts N-Channel DPAK This advanced Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain-to-source diode with a fast


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    MTD6N20E MTD6N20E/D N20E on semiconductor marking n20e 369D AN569 MTD6N20E MTD6N20E1 MTD6N20ET4 6n20e PDF

    Untitled

    Abstract: No abstract text available
    Text: ITF86116SQT TM Data Sheet 10A, 30V, 0.012 Ohm, N-Channel, Logic Level, Power MOSFET Packaging TSSOP8 File Number 4808.3 Features • Ultra Low On-Resistance - rDS ON = 0.012Ω, VGS = 10V - rDS(ON) = 0.016Ω, VGS = 4.5V • Gate to Source Protection Diode


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    ITF86116SQT PDF

    DAP202K

    Abstract: DAN202K
    Text: DAN202K/DAP202K/DAN202U/DAP202U/DAN212K — K / D io d e s DA106K/DA106U/DA112/DA113/DA114/DA115 DA116/DA118/DA119/DAN202K/DAP202K DAN202U/DAP202U/DAN212K Silicon Epitaxial Planar Ultra-High Speed Switching Diode Arrays


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    DA112/DA113/DA114/DA115/DA116/DA118/DA119 DAN202K/DAP202K/DAN202U/DAP202U/DAN212K DA106K/DA106U/DA112/DA113/DA114/DA115 DA116/DA118/DA119/DAN202K/DAP202K DAN202U/DAP202U/DAN212K DA106K/DA116/DA118/DA119 AP202K DAP202K DAN202K PDF

    AN7254

    Abstract: AN7260 ITF86116SQT ITF86116SQT2 TB370 86116
    Text: ITF86116SQT Data Sheet 10A, 30V, 0.012 Ohm, N-Channel, Logic Level, Power MOSFET Packaging TSSOP8 File Number 4808.2 Features • Ultra Low On-Resistance - rDS ON = 0.012Ω, VGS = 10V - rDS(ON) = 0.016Ω, VGS = 4.5V • Gate to Source Protection Diode • Simulation Models


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    ITF86116SQT 8611ements AN7254 AN7260 ITF86116SQT ITF86116SQT2 TB370 86116 PDF

    AN7254

    Abstract: AN7260 ITF86174SQT ITF86174SQT2 TB370
    Text: ITF86174SQT Data Sheet 9A, 30V, 0.016 Ohm, P-Channel, Logic Level, Power MOSFET Packaging TSSOP-8 Features • Ultra Low On-Resistance - rDS ON = 0.016Ω, VGS = −10V - rDS(ON) = 0.024Ω, VGS = −4.5V - rDS(ON) = 0.027Ω, VGS = −4V • Gate to Source Protection Diode


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    ITF86174SQT AN7254 AN7260 ITF86174SQT ITF86174SQT2 TB370 PDF

    4533G

    Abstract: atmel 912 QFN20 T7024 T7024-PGPM T7024-TRQY T7024-TRSY Thermal Junction to Case for QFN20 ATMEL QFN20
    Text: Features • • • • • • • • Single 3-V Supply Voltage High Power-added Efficient Power Amplifier Pout Typically 23 dBm Ramp-controlled Output Power Low-noise Preamplifier (NF Typically 2.1 dB) Biasing for External PIN Diode T/R Switch Current-saving Standby Mode


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    PSSO20 QFN20 T7024 T7024 4533G atmel 912 T7024-PGPM T7024-TRQY T7024-TRSY Thermal Junction to Case for QFN20 ATMEL QFN20 PDF

    diagram sony lcd tv

    Abstract: POWER AMPLIFIER CIRCUIT DIAGRAM 10000 QFN20 T7024 T7024-PGP T7024-TRQ T7024-TRS QFN-20
    Text: Features • • • • • • • • Single 3-V Supply Voltage High Power-added Efficient Power Amplifier Pout Typically 23 dBm Ramp-controlled Output Power Low-noise Preamplifier (NF Typically 2.1 dB) Biasing for External PIN Diode T/R Switch Current-saving Standby Mode


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    PSSO20 QFN20 T7024 T7024 4533F diagram sony lcd tv POWER AMPLIFIER CIRCUIT DIAGRAM 10000 T7024-PGP T7024-TRQ T7024-TRS QFN-20 PDF

    ICT7024

    Abstract: No abstract text available
    Text: Features • • • • • • • • Single 3-V Supply Voltage High Power-added Efficient Power Amplifier Pout Typically 23 dBm Ramp-controlled Output Power Low-noise Preamplifier (NF Typically 2.1 dB) Biasing for External PIN Diode T/R Switch Current-saving Standby Mode


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    PSSO20 QFN20 T7024 T7024 4533C ICT7024 PDF

    1N6227

    Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


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    PDF

    SMD diode DB3

    Abstract: SMD diode N20 SMD diode DB6 8c 617 transistor AD7545JN AD7545KN AD7545SQ AD7545TQ DB10 AD7545
    Text: a CMOS 12-Bit Buffered Multiplying DAC AD7545 FEATURES 12-Bit Resolution Low Gain TC: 2 ppm/؇C typ Fast TTL Compatible Data Latches Single +5 V to +15 V Supply Small 20-Lead 0.3" DIP and 20-Terminal Surface Mount Packages Latch Free Schottky Protection Diode Not Required


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    12-Bit AD7545 12-Bit 20-Lead 20-Terminal AD7545 P-20A SMD diode DB3 SMD diode N20 SMD diode DB6 8c 617 transistor AD7545JN AD7545KN AD7545SQ AD7545TQ DB10 PDF

    adlh0032cg

    Abstract: AD544L AD7545 SMD diode N20 AD7545CQ AD584J ADLH0032 DB10 AD7545AQ AD7545BQ
    Text: a CMOS 12-Bit Buffered Multiplying DAC AD7545 FEATURES 12-Bit Resolution Low Gain TC: 2 ppm/؇C typ Fast TTL Compatible Data Latches Single +5 V to +15 V Supply Small 20-Lead 0.3" DIP and 20-Terminal Surface Mount Packages Latch Free Schottky Protection Diode Not Required


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    12-Bit AD7545 12-Bit 20-Lead 20-Terminal AD7545 adlh0032cg AD544L SMD diode N20 AD7545CQ AD584J ADLH0032 DB10 AD7545AQ AD7545BQ PDF

    76404DK8

    Abstract: HUFA76404DK8T RG103 KP108
    Text: HUFA76404DK8T N-Channel Dual MOSFET 62V, 3.2A, 132mΩ Features Applications „ rDS ON = 110mΩ (Typ.), VGS = 5V, ID = 3.2A „ Motor / Body Load Control „ Qg(tot) = 3.8nC (Typ.), VGS = 5V „ ABS Systems „ Low Miller Charge „ Powertrain Management „ Low QRR Body Diode


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    HUFA76404DK8T HUFA76404DK8T 76404DK8 RG103 KP108 PDF

    c5088 transistor

    Abstract: transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N
    Text: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154


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    1853IMPATT c5088 transistor transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N PDF

    Untitled

    Abstract: No abstract text available
    Text: MTD6N20E Power MOSFET 6 A, 200 V, N−Channel DPAK This advanced Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain−to−source diode with a fast recovery time. Designed for low voltage, high speed switching


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    MTD6N20E MTD6N20E/D PDF

    Untitled

    Abstract: No abstract text available
    Text: MTD6N20E Power MOSFET 6 A, 200 V, N−Channel DPAK This advanced Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain−to−source diode with a fast recovery time. Designed for low voltage, high speed switching


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    MTD6N20E MTD6N20E/D PDF

    FDN363N

    Abstract: N6 marking diode marking n9
    Text: Preliminary FDN363N N-Channel PowerTrench MOSFET 100V, 1A, 240mΩ Features Applications • r DS ON = 200mΩ (Typ.), VGS = 10V, ID = 1A • DC/DC converters • Qg(tot) = 4nC (Typ.), VGS = 10V • Low Miller Charge • Low QRR Body Diode • UIS Capability (Single Pulse and Repetitive Pulse)


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    FDN363N 250oC/W FDN363N N6 marking diode marking n9 PDF

    new bright R288-2

    Abstract: 24c08an new bright R288 ac14g ICS950405 CADIN14 K8T800 y532 quanta PHD108NQ03LT
    Text: 5 4 3 2 1 ZI5 SYSTEM BLOCK DIAGRAM H/W MONITOR D THERMAL DIODE IN 200/266/333MHZ AMD Althon 64 P3 DDR DIMM P3, 4 DC/DC SMDDR_VTERM BOM mark *:no stuff P@:with PR stuff *@:with PR no stuff 19V IN P27,28 D DDR DIMM HyperTransport Link Y2-14.318MHz Y1-27MHz


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    200/266/333MHZ Y1-27MHz Y2-14 318MHz ICS950405 M10/M11 K8T800 Y5-32 768MHz 266/533MB/s new bright R288-2 24c08an new bright R288 ac14g ICS950405 CADIN14 K8T800 y532 quanta PHD108NQ03LT PDF

    ESJC01-12B

    Abstract: uef 160 HIGH VOLTAGE DIODE 12kv 350ma ESJC01 ESJC01-09B
    Text: ESJC01 9 k V , 1 2 k V s ± ' J ' i i i i r<i i - K ¡6JES3lE$r' ' i =t—K • fl-JK'+ ji : Outline Drawings HIGH VOLTAGE SILICON DIODE ESJC01 li , * t t W # « s * S ! * ) IS iE - ^ K M » C E S iilt i, 'f ! j - K T t o ESJC01 is high reliability and high current capability type


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    ESJC01 30MIN. ESJC01-09B ESJC01-12B uef 160 HIGH VOLTAGE DIODE 12kv 350ma PDF