E3P102
Abstract: e3p1 e3p10
Text: NTMSD3P102R2 FETKY P−Channel Enhancement−Mode Power MOSFET and Schottky Diode Dual SO−8 Package Features • High Efficiency Components in a Single SO−8 Package • High Density Power MOSFET with Low RDS on , http://onsemi.com Schottky Diode with Low VF
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NTMSD3P102R2
NTMSD3P102R2
0E-03
0E-02
0E-01
0E-05
0E-04
E3P102
e3p1
e3p10
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XP152A12C0MR
Abstract: No abstract text available
Text: Power MOS FET ◆P-Channel Power MOS FET •Applications ◆DMOS Structure ●Notebook PCs ◆Low On-State Resistance : 0.3Ω max ●Cellular and portable phones ◆Ultra High-Speed Switching ●On-board power supplies ◆Gate Protect Diode Built-in ●Li-ion battery systems
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NSOT-23
XP152A12C0MR
OT-23
250/W
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Untitled
Abstract: No abstract text available
Text: Bulletin I2068 rev. D 09/06 SD603C.C SERIES Hockey Puk Version FAST RECOVERY DIODES Features 600A High power FAST recovery diode series 1.0 to 2.0 µs recovery time High voltage ratings up to 2200V High current capability Optimized turn on and turn off characteristics
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I2068
SD603C.
000V/
D603C.
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Untitled
Abstract: No abstract text available
Text: Bulletin I2068 rev. D 09/06 SD603C.C SERIES Hockey Puk Version FAST RECOVERY DIODES Features 600A High power FAST recovery diode series 1.0 to 2.0 µs recovery time High voltage ratings up to 2200V High current capability Optimized turn on and turn off characteristics
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I2068
SD603C.
08-Mar-07
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S15C
Abstract: S20C SD603C
Text: Bulletin I2068 rev. C 04/00 SD603C.C SERIES Hockey Puk Version FAST RECOVERY DIODES Features High power FAST recovery diode series 600A 1.0 to 2.0 µs recovery time High voltage ratings up to 2200V High current capability Optimized turn on and turn off characteristics
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I2068
SD603C.
50Hzse
S15C
S20C
SD603C
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S15C
Abstract: S20C SD603C 6.C DIODE
Text: Bulletin I2068 rev. D 09/06 SD603C.C SERIES Hockey Puk Version FAST RECOVERY DIODES Features 600A High power FAST recovery diode series 1.0 to 2.0 µs recovery time High voltage ratings up to 2200V High current capability Optimized turn on and turn off characteristics
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I2068
SD603C.
12-Mar-07
S15C
S20C
SD603C
6.C DIODE
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ka s15
Abstract: S15C S20C SD603C
Text: Bulletin I2068 rev. B 09/94 SD603C.C SERIES Hockey Puk Version FAST RECOVERY DIODES Features High power FAST recovery diode series 600A 1.0 to 2.0 µs recovery time High voltage ratings up to 2200V High current capability Optimized turn on and turn off characteristics
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I2068
SD603C.
SD603
ka s15
S15C
S20C
SD603C
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1885A
Abstract: diode d707 ka s15 S15C S20C SD603C D-712 B-43, PUK weight
Text: Previous Datasheet Index Next Data Sheet Bulletin I2068/B SD603C.C SERIES Hockey Puk Version FAST RECOVERY DIODES Features High power FAST recovery diode series 600A 1.0 to 2.0 µs recovery time High voltage ratings up to 2200V High current capability Optimized turn on and turn off characteristics
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I2068/B
SD603C.
D-709
D-710
1885A
diode d707
ka s15
S15C
S20C
SD603C
D-712
B-43, PUK weight
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Untitled
Abstract: No abstract text available
Text: SMAJ5913 thru SMAJ5956, e3 SILICON 3.0 Watt ZENER DIODE SCOTTSDALE DIVISION PACKAGE The SMAJ5913-5956B series of surface mount 3.0 watt Zeners provides voltage regulation in a selection from 3.3 to 200 volts with different tolerances as identified by suffix letter on the part number. It is equivalent to the JEDEC
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SMAJ5913
SMAJ5956,
SMAJ5913-5956B
1N5913
1N5956B
SMAJ5913-SMAJ5956B
DO-214BA
DO-214AC
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1N5913
Abstract: 1N5956B J-STD-020B 5956B HSMBJ5913-5956B 5951D
Text: HSMBJ5913 thru HSMBJ5956, e3 SILICON 3.0 Watt ZENER DIODE SCOTTSDALE DIVISION PACKAGE The HSMBJ5913-5956B series of surface mount 3.0 watt Zeners provides voltage regulation in a selection from 3.3 to 200 volts with different tolerances as identified by suffix letter on the part number. It is equivalent to the JEDEC
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HSMBJ5913
HSMBJ5956,
HSMBJ5913-5956B
1N5913
1N5956B
J-STD-020B
5956B
5951D
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Untitled
Abstract: No abstract text available
Text: SMAJ5913 thru SMAJ5956, e3 SILICON 3.0 Watt ZENER DIODE SCOTTSDALE DIVISION PACKAGE The SMAJ5913-5956B series of surface mount 3.0 watt Zeners provides voltage regulation in a selection from 3.3 to 200 volts with different tolerances as identified by suffix letter on the part number. It is equivalent to the JEDEC
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SMAJ5913
SMAJ5956,
SMAJ5913-5956B
1N5913
1N5956B
SMAJ5913-SMAJ5956B
DO-214BA
DO-214AC
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do-214ac footprint
Abstract: 1N5913 J-STD-020B MIL-PRF19500 SMAJ5913 SMAJ5956 1N5956B
Text: SMAJ5913 thru SMAJ5956, e3 SILICON 3.0 Watt ZENER DIODE SCOTTSDALE DIVISION PACKAGE The SMAJ5913-5956B series of surface mount 3.0 watt Zeners provides voltage regulation in a selection from 3.3 to 200 volts with different tolerances as identified by suffix letter on the part number. It is equivalent to the JEDEC
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SMAJ5913
SMAJ5956,
SMAJ5913-5956B
1N5913
1N5956B
SMAJ5913-SMAJ5956B
DO-214BA
DO-214AC
do-214ac footprint
J-STD-020B
MIL-PRF19500
SMAJ5956
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3 Watt Zener Diode
Abstract: zener diode 3 watt a 220 1N5913 1N5956B J-STD-020B
Text: HSMBJ5913 thru HSMBJ5956, e3 SILICON 3.0 Watt ZENER DIODE SCOTTSDALE DIVISION PACKAGE The HSMBJ5913-5956B series of surface mount 3.0 watt Zeners provides voltage regulation in a selection from 3.3 to 200 volts with different tolerances as identified by suffix letter on the part number. It is equivalent to the JEDEC
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HSMBJ5913
HSMBJ5956,
HSMBJ5913-5956B
1N5913
1N5956B
3 Watt Zener Diode
zener diode 3 watt a 220
J-STD-020B
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PDF
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Untitled
Abstract: No abstract text available
Text: SD603C.C Series Vishay Semiconductors Fast Recovery Diodes Hockey PUK Version , 600 A FEATURES • High power FAST recovery diode series • 1.0 to 2.0 µs recovery time RoHS COMPLIANT • High voltage ratings up to 2200 V • High current capability • Optimized turn-on and turn-off characteristics
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SD603C.
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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skiip 832 gb 120
Abstract: SKIIP832GB
Text: SKiiP 832 GB 120 - 406 CTV Absolute Maximum Ratings Symbol Conditions 1 IGBT & Inverse Diode VCES Operating DC link voltage VCC 9) Theatsink = 25 °C IC IGBT & Diode Tj 3) 4) AC, 1 min. Visol Theatsink = 25 °C IF Theatsink = 25 °C; tp < 1 ms IFM tp = 10 ms; sin.; Tj = 150 °C
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SKIIP832GB
Abstract: skiip 832 gb 120
Text: s em ik r d n SKiiP 832 GB 120 - 406 CTV Absolute Maximum Ratings Symbol Values Units 1200 900 800 - 4 0 . + 150 3000 5 800 1600 8600 374 V V A °C V A A A kA2s |Conditions1) IG BT & inverse Diode VcES V c c 9» lc Ti 3} V is o l 41 If Ifm Ifsm l2t Diode)
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skiip 832 gb 120 000c
Abstract: skiip 832 gb 120 skiip gb 120 S3 diode SKIIP832GB skiip+832+gb+120+000c
Text: SKiiP 832 GB 120 - 406 CTV Absolute Maximum Ratings Symbol Visol 4 Top ,Tstg 1) Conditions AC, 1min Operating / stor. temperature Values 3000 -25.+85 IGBT and Inverse Diode VCES VCC 5) Operating DC link voltage IC IGBT Tj 3) IGBT + Diode IF Diode IFM Diode, tp < 1 ms
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IGBT11)
Rthjs10)
skiip 832 gb 120 000c
skiip 832 gb 120
skiip gb 120
S3 diode
SKIIP832GB
skiip+832+gb+120+000c
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IRF830
Abstract: IRF830.831 reliability irf830 diode on 832 IRF830-3 power MOSFET IRF830
Text: N-CHANNEL POWER MOSFETS IRF830/831/832/833 FEATURES • • • • • • • TO-220 Lower Rqs ON Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability
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IRF830/831/832/833
O-220
IRF830
IRF831
IRF832
IRF833
IRF830.831
reliability irf830
diode on 832
IRF830-3
power MOSFET IRF830
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Untitled
Abstract: No abstract text available
Text: & December 1996 National Semiconductor N D H 8320C Dual N & P-Channel Enhancement M ode Field Effect Transistor General Description Features These dual N- and P -C hannel e n h a n ce m e n t m o d e p o w e r fie ld e ffect tra n s is to rs are pro d u ce d using
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8320C
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semikron skiip 400 gb
Abstract: 832GB120-406CTV SKIIP CASE S4 IGBT module 700a
Text: SKiiP 832GB120-406CTV I. Power section Absolute maximum ratings Symbol Conditions Values IGBT VCES VCC 1 Operating DC link voltage VGES IC Ts = 25 70) °C Inverse diode IF = -IC Ts = 25 (70) °C IFSM Tj = 150 °C, tp = 10ms; sin I2t (Diode) Diode, Tj = 150 °C, 10ms
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832GB120-406CTV
semikron skiip 400 gb
832GB120-406CTV
SKIIP CASE S4
IGBT module 700a
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PDF
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8322
Abstract: SEIKO LMT 2902 D lmt 2902
Text: Rev.2.0 SMALL PACKAGE PFM CONTROL STEP-UP SWITCHING REGULATOR S-8321/8322 Series The S-8321/8322 Series is a CMOS PFM-control step-up switching regulator which mainly consists of a reference voltage source, an oscillation circuit, a power MOS FET, and a comparator. The new
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S-8321/8322
8322
SEIKO
LMT 2902 D
lmt 2902
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semikron skiip 832
Abstract: lace sensor SKIIP832GB skiip 832 gb 120 MQ 9 sensor
Text: SEMIKRON SKiiP 832 GB 120 - 406 CTV Absolute Maximum Ratings Sym bol |c o n d itio n s 1> Values Units 1200 V IGBT & Inverse Diode V cES SKiiPPACK SK integrated intelligent Power PACK halfbridge SKiiP 832 GB 120 + Driver 406 CTV 713 V c c 9> O perating DC link voltage
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arketin\datenbl\skiippac\sensor\d832gb
semikron skiip 832
lace sensor
SKIIP832GB
skiip 832 gb 120
MQ 9 sensor
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PDF
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Si4814DY
Abstract: Si4814DY-T1-E3 IDM-40 Si4814BDY-T1-E3
Text: 勝特力科技 886-3-5753170 百年電子 86-755-83289224 Http://www.100y.com.tw Specification Comparison Vishay Siliconix Si4814BDY vs. Si4814DY Description: Package: Pin Out: Dual N-Channel, 30-V D-S MOSFET with Schottky Diode SO-8 Identical Part Number Replacements:
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Si4814BDY
Si4814DY
Si4814BDY-T1-E3
Si4814DY-T1-E3
Si4814DY-T1
IDM-40
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LA 6520
Abstract: 617 connector OD-8324 diode 33D Connector MTTF
Text: C ELECTRONICS INC ST L4E7S2S 00ÜS53G Ö INECE T- 41-07 NEC Fiber Optic Devices OD-8324- LD Module OD-8324 is designed to couple ID Laser Diode output light efficiently to optical fiber. PIN photodiode is installed in OD-8324 for APC (Automatic Power Control) and moni
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T-41-07
OD-8324-
OD-8324
j226b6
940S6.
FO-0007
LA 6520
617 connector
diode 33D
Connector MTTF
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