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    DIODE QE RAJ Search Results

    DIODE QE RAJ Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE QE RAJ Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    RL1024PAG-021

    Abstract: RL2048PAG-021 CCD linear array RL2048P RL0512PAG-021 fast linear ccd 512 photodiode array perkinelmer RL2048PAQ-021 photodiode D11 rl1024P
    Text: CCD P-Series Linear Photodiode Array Imagers 14µm, single output, 512, 1024, 2048 elements Features Description In the P-series linear imager, PerkinElmer has combined the best features of high-sensitivity photodiode array detection and high-speed chargecoupled scanning to offer an uncompromising solution to the increasing


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    800-775-OPTO DSP-101 8/2004W RL1024PAG-021 RL2048PAG-021 CCD linear array RL2048P RL0512PAG-021 fast linear ccd 512 photodiode array perkinelmer RL2048PAQ-021 photodiode D11 rl1024P PDF

    CCD linear array

    Abstract: RL2048PAG-021 RL1024PAG-021 RL0512PAG-021 fast linear ccd 512 linear array photodiode 2048 elements RL2048PAQ-021 2048 x 1 ccd linear array diode 250nm RL2048P
    Text: CCD P-Series Linear Photodiode Array Imagers 14µm, single output, 512, 1024, 2048 elements Features Description In the P-series linear imager, PerkinElmer has combined the best features of high-sensitivity photodiode array detection and high-speed chargecoupled scanning to offer an uncompromising solution to the increasing


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    800-775-OPTO DSP-101 8/2004W CCD linear array RL2048PAG-021 RL1024PAG-021 RL0512PAG-021 fast linear ccd 512 linear array photodiode 2048 elements RL2048PAQ-021 2048 x 1 ccd linear array diode 250nm RL2048P PDF

    Untitled

    Abstract: No abstract text available
    Text: High Speed InGaAs PIN Photodiodes C30616, C30637, C30617, C30618 Series Overview Features and Benefits This series of high speed InGaAs photodiodes is designed for use in OEM fiber-optic communications systems and high-speed receiver applications including trunk line, LAN, fiber-in-the-loop


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    C30616, C30637, C30617, C30618 DTS0308 PDF

    C30617BH

    Abstract: No abstract text available
    Text: Overview Features and Benefits This series of high speed InGaAs photodiodes is designed for use in OEM fiber-optic communications systems and high-speed receiver applications including trunk line, LAN, fiber-in-the-loop and data communications. Ceramic submount packages are available for easy


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    DTS0308 C30617BH PDF

    Lens Mount M72 x 0.75

    Abstract: RETICON linescan ccd sensor MDR26 reticon photodiode array CCD-Sensor SB4480CLG-011 LR 3441 DTS0507 M72X0
    Text: 4K Digital Linescan Camera Features and Benefits High speed 80 MHz data rate 14 µm square pixels in 4096 element resolution Small size—109.2 mm h x 81.3 mm (w) x 40.1 mm (d) 8/10/12- bit output format High line rates up to 19 kHz The SmartBlue 4K is the latest addition to PerkinElmer’s family of high-speed digital


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    size--109 came6775-1008 DTS0507 Lens Mount M72 x 0.75 RETICON linescan ccd sensor MDR26 reticon photodiode array CCD-Sensor SB4480CLG-011 LR 3441 DTS0507 M72X0 PDF

    RETICON photodiode array 512

    Abstract: RL1202LGQ-711 RL1205LGQ-711 RETICON RETICON 128 RL1210LGQ-711 RL1201LGQ-711 RETICON TB series sensors Reticon photodiode array 1024 pixel photodiode 256 elements silicon
    Text: Imaging Telecom Imaging Product Line L-Series Linear CMOS Spectroscopy Sensor 25 or 50 µm pitch, 2.5 mm aperture, 128 to 1024 elements Description Features The PerkinElmer L-series of monolithic self-scanning linear photodiode arrays offers a high quality, low cost solution


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    sil-0703 D-65199 DSP-106 10/2001W RETICON photodiode array 512 RL1202LGQ-711 RL1205LGQ-711 RETICON RETICON 128 RL1210LGQ-711 RL1201LGQ-711 RETICON TB series sensors Reticon photodiode array 1024 pixel photodiode 256 elements silicon PDF

    RETICON photodiode array 512

    Abstract: AMPLI DUAL CV 60 reticon photodiode array RL1505LFQ-711 RETICON RL1202LGQ-711 Reticon photodiode array 1024 pixel RL1502LFQ-711 RL1201LGQ-711 RL1205
    Text: Imaging Telecom Imaging Product Line L-Series Linear CMOS Spectroscopy Sensor 25 or 50 µm pitch, 2.5 mm aperture, 128 to 1024 elements Description Features The PerkinElmer L-series of monolithic self-scanning linear photodiode arrays offers a high quality, low cost solution


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    sil5-0703 D-65199 DSP-106 8/2001W RETICON photodiode array 512 AMPLI DUAL CV 60 reticon photodiode array RL1505LFQ-711 RETICON RL1202LGQ-711 Reticon photodiode array 1024 pixel RL1502LFQ-711 RL1201LGQ-711 RL1205 PDF

    RETICON photodiode array 512

    Abstract: hirose 6 pin RETICON Reticon photodiode array 1024 pixel nikon CCD line-scan image sensor linescan ccd sensor SB1440CLG-011 nikon sensor digital camera circuit
    Text: w w w. o p t o e l e c t ro n i c s . p e r k i n e l m e r. c o m Applications Machine vision High speed inspection Postal/parcel sorting Web inspection Surface inspection OCR/bar code reading T The two-point flat field pixel correction circuits give the user


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    DTS1007P RETICON photodiode array 512 hirose 6 pin RETICON Reticon photodiode array 1024 pixel nikon CCD line-scan image sensor linescan ccd sensor SB1440CLG-011 nikon sensor digital camera circuit PDF

    TMS4464

    Abstract: TMS 2764 Texas Instruments IC mk4564 mcm6256 tms4500a Fuji Electric tv schematic diagram ET 439 power module fuji mcm6665 74L5138 TMS4500
    Text: SMYOOO2 . ,MOS Memory Data Book 1984 II I III \' h' \/ Commercial and Military , :\ Specifications ' 1'/ ! . .Jf TEXAS INSTRUMENTS Alphanumeric Index, Table of Contents, Selection Guide Interchangeability Guide _ Glossary/Timing Conventions/Data Sheet Structure


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    SMYD002 o184-464PP-142M iS-146 TMS4464 TMS 2764 Texas Instruments IC mk4564 mcm6256 tms4500a Fuji Electric tv schematic diagram ET 439 power module fuji mcm6665 74L5138 TMS4500 PDF

    transistor C734

    Abstract: C705 diode c734 DIODE C705 C734 transistor diode 7g2
    Text: PD - 9.796A bitemational [ÏÔR]Rectifier IRGBC30UD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBT Features V ces = 600V • Switching-loss rating includes all "tail" losses • HEXFRED soft ultrafast diodes


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    IRGBC30UD2 Para17 O-22QAB transistor C734 C705 diode c734 DIODE C705 C734 transistor diode 7g2 PDF

    DIODE RECTIFIER BRIDGE SINGLE 55a 600v

    Abstract: IRG4PC50UD ir igbt BH rn transistor
    Text: International Rectifier IOR PD -9.1471A IRG4PC50UD PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features UltraFast CoPack IGBT • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode


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    IRG4PC50UD O-247AC DIODE RECTIFIER BRIDGE SINGLE 55a 600v IRG4PC50UD ir igbt BH rn transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: I , ,• I In te rn a tio n a l IQ R R ectifier PD -5.05S preliminary "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK G A400TD 60U Ultra-Fast Speed IGBT Features • Generation 4 IGBT technology V ces • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200


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    A400TD PDF

    Untitled

    Abstract: No abstract text available
    Text: PD-5.043 International Iö R Rectifier IGBT SIP MODULE Features CPV363M4K Short Circuit Rated UltraFast IGBT • Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 1 0 fis@ 125°C, \feE = 15V • Fully isolated printed circuit board mount package


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    CPV363M4K 360Vdc, PDF

    DIODE S 43a

    Abstract: IRF1010N
    Text: PD - 9.1372A nternational I O R Rectifier IRF1010NS/L HEXFET Power MOSFET • Advanced Process Technology • Surface Mount IRF1010NS • Low-profile through-hole (IRF101ONL) • 175°C Operating Temperature • Fast Switching • Fully Avalanche Rated


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    IRF1010NS) IRF101ONL) IRF1010NS/L DIODE S 43a IRF1010N PDF

    Untitled

    Abstract: No abstract text available
    Text: International l R Rectifier preliminary SINGLE SWITCH IGBT DOUBLE INT-A-PAK PD-50071A G A600G D25S Standard Speed IGBT Features • S tan dard speed, op tim ized fo r ba tte ry pow ered application • V e ry low con du ction losses • H E X F R E D ™ an tipa ralle l diode s w ith ultra-soft


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    PD-50071A A600G PDF

    pm20cma060

    Abstract: 3 phase rectifier circuit diagram igbt ultrafast n channel 600v 20a IGBT h 9128 Alcohol detection with vehicle controlling pm20c P channel 600v 20a IGBT resistor sms diode B5C 3 phase UPS block WITH CIRCUIT diagram
    Text: International fegjRectifier PD 9128 provisional_ PM20CMA060 IGBT INTELLIGENT MODULE Features • 3 phase IGBT bridge with drive and protection circuit. • 3 kW output power at 300VDC, 8kHz, Tc = 85°C • "UltraFast" IGBT and “HEXFRED”™ Ultratast, Soft Recovery


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    PM20CMA060 300VDC, 25kHz PM20CMA060 10-Timing S5M52 3 phase rectifier circuit diagram igbt ultrafast n channel 600v 20a IGBT h 9128 Alcohol detection with vehicle controlling pm20c P channel 600v 20a IGBT resistor sms diode B5C 3 phase UPS block WITH CIRCUIT diagram PDF

    Untitled

    Abstract: No abstract text available
    Text: PD -5.046 International TOR Rectifier CPV362M4F IG BTSIP MODULE Features • • • • Fully isolated printed circuit board mount package Switching-loss rating includes all "tail" losses HEXFRED soft ultrafast diodes Optimized for medium operating 1 to 10 kHz


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    CPV362M4F 360Vdc, PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 9 .1 6 1 9 A International I R Rectifier 1RG4BC30K-S PRELIMINARY Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features c • High short circuit rating optimized for motor control, tsc =10ps, @ 360V VCE start , T j = 125°C,


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    1RG4BC30K-S S54SH PDF

    transistors BC 557C

    Abstract: BF366 SMD code 307C F199 transistor 2N5793 BC413 motorola ZENER diode marking code z7 equivalent of transistor bc212 bc 214 bc107c motorola 2n555
    Text: S e le c to r G u id e s 1 M e ta l-C a n T ra n s is to rs 3 F ie ld -E ffe c t T ra n s is to rs 4 S m a ll-S ig n a l T u n in g , S w itc h in g and Z e n e r D io d e s 5 T a p e a n d R eel S p e c ific a tio n s P a ck ag e O u tlin e D im e n s io n s and


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    PDF

    Untitled

    Abstract: No abstract text available
    Text: HARRIS SEMICOND SECTOR bûE D • 43D2271 GÜSGS1S n i HHAS HGTG20N120E2 34A, 1200V N-Channel IGBT Decem ber 1993 Package Features JEDEC STYLE TO-247 TOP VIP N • 34 Amp, 1200 Volt • Latch Free Operation • Typical Fall Time - 780ns t COLLECTOR BOTTOM SIDE


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    43D2271 HGTG20N120E2 O-247 780ns HGTG20N120E2 PDF

    74HC FAMILY

    Abstract: elmos TMD54HC373 TMD54HC374 TMD74HC373 TMD74HC374
    Text: TM D54HC 373/TM D74HC 373 3 STATE OCTAL LATCHES TM D54HC 374/TM D74HC 374 TELMOS INC. 3 STATE OCTAL D-FLIP-FLO PS • • • • • • • • CMOS INPUT COMPATIBLE 13 NS PROPAGATION DELAY TYP. 1 ^A MAX. INPUT CURRENT DRIVES 30 LS-TTL LOADS FULL PARALLEL LOAD ACCESS


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    TMD54HC 373/TMD74HC 374/TMD74HC 20-Pin 74HC FAMILY elmos TMD54HC373 TMD54HC374 TMD74HC373 TMD74HC374 PDF

    powec rm 1110

    Abstract: rm 1100 powec MPC1000 transistors JX 6822 A inverter welder 4 schematic SAA 14Z transistor SI 6822 stg 8810 PL 15Z DIODE germanium transistor
    Text: TH€ SEMICONDUCTOR DATA LIBRARY SERIES A VOLUME HI prepared by Technical Inform ation Center The in fo rm a tio n in this book has been ca re fu lly checked and is believed to be reliable; however, no re sp o n sib ility is assumed fo r inaccuracies. F u rthe rm o re, this in fo rm a tio n does no t convey to the purchaser o f sem iconductor


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    111ii MZ5558 Z5555, Z5556, MZ5557 powec rm 1110 rm 1100 powec MPC1000 transistors JX 6822 A inverter welder 4 schematic SAA 14Z transistor SI 6822 stg 8810 PL 15Z DIODE germanium transistor PDF

    BFT65

    Abstract: D1279 Siemens 1414 D1275 germanium Germanium drift transistor diode a811 Siemens Halbleiter germanium transistor legiert
    Text: Table of Contents Selection Guide Ordering Codes Inhaltsverzeichnis Typeniibersicht Bestellnummern Scope of Applications Technical Information Quality Specifications Einsatzhinweise Technische Angaben Qualitatsangaben Package Outlines Mounting Instructions


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    PDF

    LA252

    Abstract: Bipolar Junction Transistor npn VCE 3.7 series 160i LA200 LA201 LA202 LA250 LA251 210 volt Zener Diode
    Text: B E N IM U M c o r p o r a t i Om LA200 Series LA250 mDDEH8 SEMICUSTOM LINEAR ARRAYS DATA SHEET CIRCUIT DESCRIPTION ADVANTAGES OF THE SEMICUSTOM ARE: • custom circuitry at low cost Th e G e n n u m s e m ic u s to m in te g ra te d c irc u its are a rra y s of


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    LA200 LA250 LA201 LA202 LA204 LA252 Bipolar Junction Transistor npn VCE 3.7 series 160i LA201 LA202 LA251 210 volt Zener Diode PDF