MDM1200H45E2-H
Abstract: mbn1200h45e2-h MBN1200H45
Text: DIODE MODULE Spec.No.SR2-SP-09005 R4 MDM1200H45E2-H P1 Preliminary Specification FEATURES ∗ Low Reverse Recovery Loss diode module. ∗ Low noise recovery: Ultra soft fast recovery diode. ∗ High reverse recovery capability: Super HiRC Structure. ∗ High reliability, high durability diodes.
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SR2-SP-09005
MDM1200H45E2-H
MDM1200H45Er
MDM1200H45E2-H
mbn1200h45e2-h
MBN1200H45
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R22A
Abstract: transistor MTBF OPTOCUPLER HAND BOOK TRANSISTOR mosfet transistor R1d R24 transistor optocupler transformer mtbf R18A R22E
Text: Data Base : MIL - HDBK - 217F Environment : Ground benign , 25 Load : 110VAC input , Full load Unit : ZPS60-3 Ver: V1.1 Date: 22/05/2003 CAT TYPE 5.1 Microcircuits,MOS 6.1 Diode,General 6.1 Diode, Schottky 6.1 Diode, Schottky 6.1 Diode, Fast 6.1 Diode, Zener
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110VAC
ZPS60-3
R22A
transistor MTBF
OPTOCUPLER HAND BOOK
TRANSISTOR mosfet
transistor R1d
R24 transistor
optocupler
transformer mtbf
R18A
R22E
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transistor R1d
Abstract: transistor R1A diode FR 105 TRANSISTOR 106 d1 R22A MTBF-ZPS40 04112 78540 R18A 217F
Text: Data Base : MIL - HDBK - 217F Environment : Ground benign , 25 Load : 110VAC input , Full load Unit : ZPS40-3 Ver: V1.1 Date: 21/05/2003 CAT TYPE 5.1 Microcircuits,MOS 6.1 Diode,General 6.1 Diode, Schottky 6.1 Diode, Schottky 6.1 Diode, Fast 6.1 Diode, Zener
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110VAC
ZPS40-3
transistor R1d
transistor R1A
diode FR 105
TRANSISTOR 106 d1
R22A
MTBF-ZPS40
04112
78540
R18A
217F
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zd1 1014
Abstract: 217F C10A C12A capacitor ceramic optocupler transistor MTBF
Text: Data Base : MIL - HDBK - 217F Environment : Ground benign , 25℃ Load : 110VAC input , Full load Unit : ZPD40-512 Ver: V1.0 Date: 11/29/2004 CAT TYPE Q'ty 5.1 Microcircuits,MOS 1 6.1 Diode,General 1 6.1 Diode,General 1 6.1 Diode, Schottky 1 6.1 Diode, Schottky
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110VAC
ZPD40-512
zd1 1014
217F
C10A
C12A
capacitor ceramic
optocupler
transistor MTBF
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ltc4352iddpbf
Abstract: TRANSISTOR mosfet 9V LTC4352I LTC4352 LTC4352IMS Schottky Diode 80V 6A 12-PIN LTC4352C LTC4352CDD LTC4352IDD
Text: LTC4352 Low Voltage Ideal Diode Controller with Monitoring FEATURES DESCRIPTION n The LTC 4352 creates a near-ideal diode using an external N-channel MOSFET. It replaces a high power Schottky diode and the associated heat sink, saving power and board area. The ideal diode function permits low loss
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LTC4352
12-Pin
1TC4412HV
8V/36V,
TSOT-23
LTC4413/LTC4413-1
DFN-10
LTC4414
LTC4416/LTC4416-1
ltc4352iddpbf
TRANSISTOR mosfet 9V
LTC4352I
LTC4352
LTC4352IMS
Schottky Diode 80V 6A
LTC4352C
LTC4352CDD
LTC4352IDD
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217F
Abstract: resistor film transistor MTBF L2 diode 725
Text: Data Base : MIL - HDBK - 217F Notice 1 Environment : GB, 25℃ Input: 115V Output: Full Load Unit : ZPSA40-5 Ver: V10 Date: 2008/8/21 CAT TYPE Q'ty 5.1 Microcircuits 1 IC3 6.1 Diode, Fast 1 D1 6.1 Diode,General 1 BR1 6.1 Diode,General 1 D2 6.1 Diode,General
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ZPSA40-5
217F
resistor film
transistor MTBF
L2 diode 725
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ZPSA60-15
Abstract: FR 306 Diode 217F
Text: Data Base : MIL - HDBK - 217F Notice 1 Environment : GB, 25℃ Input: 115V Output: Full Load Unit : ZPSA60-15 Ver: V11 Date: 2008/8/21 CAT TYPE Q'ty 5.1 Microcircuits 1 IC3 6.1 Diode, Fast 1 D1 6.1 Diode,General 1 BR1 6.1 Diode,General 1 D2 6.1 Diode,General
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ZPSA60-15
ZPSA60-15
FR 306 Diode
217F
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DIODE 4008
Abstract: "DIODE" 4008 217F capacitor Electrolytic zener3 optocupler 105 capacitor
Text: Data Base : MIL - HDBK - 217F Notice 1 Environment : GB, 25℃ Input: 115V Output: Full Load Unit : ZPSA40-12 Ver: V10 Date: 2008/8/21 CAT TYPE Q'ty 5.1 Microcircuits 1 IC3 6.1 Diode, Fast 1 D1 6.1 Diode,General 1 BR1 6.1 Diode,General 1 D2 6.1 Diode,General
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ZPSA40-12
DIODE 4008
"DIODE" 4008
217F
capacitor Electrolytic
zener3
optocupler
105 capacitor
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217F
Abstract: ZPSA60-12 capacitor variable ceramic zd1 1014 105 capacitor
Text: Data Base : MIL - HDBK - 217F Notice 1 Environment : GB, 25℃ Input: 115V Output: Full Load Unit : ZPSA60-12 Ver: V11 Date: 2008/8/21 CAT TYPE Q'ty 5.1 Microcircuits 1 IC3 6.1 Diode, Fast 1 D1 6.1 Diode,General 1 BR1 6.1 Diode,General 1 D2 6.1 Diode,General
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ZPSA60-12
217F
ZPSA60-12
capacitor variable ceramic
zd1 1014
105 capacitor
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variable resistor 502
Abstract: OPTOCUPLER HAND BOOK 217F ZPSA40-24 zpsa40 capacitor Electrolytic
Text: Data Base : MIL - HDBK - 217F Notice 1 Environment : GB, 25℃ Input: 115V Output: Full Load Unit : ZPSA40-24 Ver: V10 Date: 2008/8/21 CAT TYPE Q'ty 5.1 Microcircuits 1 IC3 6.1 Diode, Fast 1 D1 6.1 Diode, Fast 1 D2 6.1 Diode,General 1 BR1 6.1 Diode,General
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ZPSA40-24
variable resistor 502
OPTOCUPLER HAND BOOK
217F
ZPSA40-24
zpsa40
capacitor Electrolytic
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731 zener diode
Abstract: FR 309 diode 217F diode zener c5 R27A
Text: Data Base : MIL - HDBK - 217F Notice 1 Environment : GB, 25℃ Input: 115V Output: Full Load Unit : ZPSA60-5 Ver: V10 Date: 2008/8/21 CAT TYPE Q'ty 5.1 Microcircuits 1 IC3 6.1 Diode, Fast 1 D1 6.1 Diode,General 1 BR1 6.1 Diode,General 1 D2 6.1 Diode,General
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ZPSA60-5
731 zener diode
FR 309 diode
217F
diode zener c5
R27A
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Untitled
Abstract: No abstract text available
Text: DIODE MODULE Spec.No.SR2-SP-09003 R4 MDM750H65E2 FEATURES Low noise recovery: Ultra soft fast recovery diode. High reverse recovery capability: Super HiRC Structure. High reliability, high durability diodes. Isolated heat sink terminal to base .
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SR2-SP-09003
MDM750H65E2
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Untitled
Abstract: No abstract text available
Text: DIODE MODULE Spec.No.SR2-SP-09007 R4 MDM500H65E2 Preliminary Specification FEATURES Low noise recovery: Ultra soft fast recovery diode. High reverse recovery capability: Super HiRC Structure. High reliability, high durability diodes. Isolated heat sink terminal to base .
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SR2-SP-09007
MDM500H65E2
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R422C
Abstract: MIL-F-3922/54-003
Text: Agilent R422C mm-Wave Planar-Doped Barrier Detector Data Sheet 26.5 to 40.0 GHz Outstanding Performance The Planar-Doped Barrier PDB diode technology combines the best characteristics of point-contact and low barrier Schottky to provide exceptional performance. This PDB diode technology provides
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R422C
R422C
5965-2880E
MIL-F-3922/54-003
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MIL-W-85
Abstract: 4433 support R422C MIL-F-3922/54-003
Text: Agilent R422C mm-Wave Planar-Doped Barrier Detector Data Sheet 26.5 to 40.0 GHz Outstanding Performance The Planar-Doped Barrier PDB diode technology combines the best characteristics of point-contact and low barrier Schottky to provide exceptional performance. This PDB diode technology provides
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R422C
R422C
5965-2880E
MIL-W-85
4433 support
MIL-F-3922/54-003
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Untitled
Abstract: No abstract text available
Text: DUAL DIODE MODULE Spec.No.SR2-SP-08004 R4 MDM1200E17D OUTLINE DRAWING Unit in mm FEATURES ∗ Low noise due to ultra soft fast recovery diode. ∗ High reliability, high durability diodes. ∗ Isolated heat sink terminal to base . CIRCUIT DIAGRAM C(K) C(K)
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SR2-SP-08004
MDM1200E17D
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78996
Abstract: ci 4538 12v to 220 v ac inverter IC 4538 IC td 4538 GB15RF120K application of IC 4538
Text: PD - 94571 GB15RF120K IGBT PIM MODULE VCES = 1200V Features • Low VCE on Non Punch Through IGBT Technology • Low Diode VF • 10µs Short Circuit Capability • Square RBSOA • HEXFRED Antiparallel Diode with Ultrasoft Diode Reverse Recovery Characteristics
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GB15RF120K
78996
ci 4538
12v to 220 v ac inverter
IC 4538
IC td 4538
GB15RF120K
application of IC 4538
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transistor c 2335
Abstract: C-150 IRFI840G IRGIB15B60KD1
Text: PD- 94599 IRGIB15B60KD1 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.
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IRGIB15B60KD1
O-220
IRFI840G
O-220
transistor c 2335
C-150
IRFI840G
IRGIB15B60KD1
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Untitled
Abstract: No abstract text available
Text: PD- 94914 IRGIB15B60KD1PbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.
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IRGIB15B60KD1PbF
O-220
O-220
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C-150
Abstract: IRGIB10B60KD1P
Text: PD - 94913 IRGIB10B60KD1P INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.
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IRGIB10B60KD1P
O-220
O-220
C-150
IRGIB10B60KD1P
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IRGIB15B60KD1P
Abstract: C-150
Text: PD- 94914 IRGIB15B60KD1P INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.
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IRGIB15B60KD1P
O-220
O-220
IRGIB15B60KD1P
C-150
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transistor BR 9013
Abstract: C-150 IRFI840G IRGIB15B60KD1 transistor c 2335
Text: PD- 94599A IRGIB15B60KD1 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.
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4599A
IRGIB15B60KD1
O-220
IRFI840G
O-220
transistor BR 9013
C-150
IRFI840G
IRGIB15B60KD1
transistor c 2335
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diode 10a 400v
Abstract: 10a 400v bipolar transistor transistor IRF 630 ultrafast diode 10a 400v ultrafast swiching transistor C-150 IRFI840G IRGIB10B60KD1
Text: PD-94576A IRGIB10B60KD1 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.
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PD-94576A
IRGIB10B60KD1
O-220
Param99
IRFI840G
O-220
diode 10a 400v
10a 400v bipolar transistor
transistor IRF 630
ultrafast diode 10a 400v
ultrafast swiching transistor
C-150
IRFI840G
IRGIB10B60KD1
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R451570
Abstract: microwave detector diode Microwave Diode "zero-bias schottky diode" DIODE RF DETECTOR 33KOHM of resistance 33kohm
Text: A. NATIONAL MICROWAVE DIODE For 2.45 GHz nd 915 MHz Partnr: R451570 MICROWAVE DETECTOR DIODE. R 451570 is a general-purpose zero-bias Schottky diode microwave coaxial detector, intended primarily for 915 MHz and 2450MHz industrial applications. The detector delivers well-scaled DC voltages as a function of microwave power.
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R451570
R451570
2450MHz
33kOhm.
33kOhm,
Ta-25t)
microwave detector diode
Microwave Diode
"zero-bias schottky diode"
DIODE RF DETECTOR
33KOHM
of resistance 33kohm
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