laser diode bare chip
Abstract: laser diode chip 635nm
Text: SLD-635-P5-C-N-RG-300-04 UNION OPTRONICS CORP. 635nm Laser Diode Chips 635nm Red Laser Diode Chips SLD-635-P5-C-N-RG-300-04 •Specifications 1 Size : (2) Device: (3) Structure: 300*300*100µm Laser diode bare chip Multi-step growth ■External dimensions(Unit : m)
|
Original
|
PDF
|
SLD-635-P5-C-N-RG-300-04
635nm
laser diode bare chip
laser diode chip 635nm
|
Si4852DY
Abstract: Si4852DY-T1
Text: Si4852DY Vishay Siliconix N-Channel 30-V D-S MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.0120 @ VGS = 10 V 11 0.0175 @ VGS = 4.5 V 9.5 FEATURES D LITTLE FOOTr Plus D 100% Rg Tested SCHOTTKY PRODUCT SUMMARY VDS (V) VSD (v) Diode Forward Voltage
|
Original
|
PDF
|
Si4852DY
Si4852DY-T1
08-Apr-05
|
Si4852DY
Abstract: Si4852DY-T1 diode 0416
Text: Si4852DY Vishay Siliconix N-Channel 30-V D-S MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.0120 @ VGS = 10 V 11 0.0175 @ VGS = 4.5 V 9.5 FEATURES D LITTLE FOOTr Plus D 100% Rg Tested SCHOTTKY PRODUCT SUMMARY VDS (V) VSD (v) Diode Forward Voltage
|
Original
|
PDF
|
Si4852DY
Si4852DY-T1
S-31726--Rev.
18-Aug-03
diode 0416
|
Si4852DY
Abstract: Si4852DY-T1
Text: Si4852DY Vishay Siliconix N-Channel 30-V D-S MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.0120 @ VGS = 10 V 11 0.0175 @ VGS = 4.5 V 9.5 FEATURES D LITTLE FOOTr Plus D 100% Rg Tested SCHOTTKY PRODUCT SUMMARY VDS (V) VSD (v) Diode Forward Voltage
|
Original
|
PDF
|
Si4852DY
Si4852DY-T1
18-Jul-08
|
Untitled
Abstract: No abstract text available
Text: Si4852DY Vishay Siliconix N-Channel 30-V D-S MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) 30 FEATURES rDS(on) (W) ID (A) 0.0120 @ VGS = 10 V 11 0.0175 @ VGS = 4.5 V 9.5 D LITTLE FOOT Plust D 100% Rg Tested SCHOTTKY PRODUCT SUMMARY VDS (V) VSD (v) Diode Forward Voltage
|
Original
|
PDF
|
Si4852DY
Si4852DY-T1
S-31726--Rev.
18-Aug-03
|
BSM300GA170DN2
Abstract: C67070-A2710-A67
Text: BSM300GA170DN2 E3166 IGBT Power Module Preliminary data • Half-bridge • Including fast free-wheeling diodes • Enlarged diode area • Package with insulated metal base plate • RG on,min = 5.6 Ohm Type VCE IC BSM300GA170DN2 E3166 1700V 440A Package
|
Original
|
PDF
|
BSM300GA170DN2
E3166
C67070-A2710-A67
Jul-31-1996
C67070-A2710-A67
|
BSM300GA170DN2
Abstract: C67070-A2710-A67
Text: BSM300GA170DN2 E3166 IGBT Power Module • Half-bridge • Including fast free-wheeling diodes • Enlarged diode area • Package with insulated metal base plate • RG on,min = 5.6 Ohm Type VCE IC BSM300GA170DN2 E3166 1700V 440A Package Ordering Code SINGLE SWITCH 1
|
Original
|
PDF
|
BSM300GA170DN2
E3166
E3166
C67070-A2710-A67
Oct-27-1997
C67070-A2710-A67
|
Si4837DY
Abstract: Si4837DY-T1
Text: Si4837DY Vishay Siliconix P-Channel 30-V D-S MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY VDS (V) - 30 rDS(on) (W) D TrenchFETr Power MOSFET D LITTLE FOOTr Plus Schottky D 100% Rg Tested ID (A) 0.020 @ VGS = - 10 V 8.3 0.030 @ VGS = - 4.5 V
|
Original
|
PDF
|
Si4837DY
Si4837DY-T1
18-Jul-08
|
Untitled
Abstract: No abstract text available
Text: NDF05N50Z, NDD05N50Z N-Channel Power MOSFET 500 V, 1.5 W Features • • • • • • Low ON Resistance Low Gate Charge ESD Diode−Protected Gate 100% Avalanche Tested 100% Rg Tested These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
|
Original
|
PDF
|
NDF05N50Z,
NDD05N50Z
NDF05N50Z/D
|
NDF10N60ZG
Abstract: 221AH H1AA1
Text: NDF10N60Z N-Channel Power MOSFET 600 V, 0.75 W Features • • • • • • Low ON Resistance Low Gate Charge ESD Diode−Protected Gate 100% Avalanche Tested 100% Rg Tested These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com
|
Original
|
PDF
|
NDF10N60Z
JESD22-A114)
NDF10N60Z/D
NDF10N60ZG
221AH
H1AA1
|
Untitled
Abstract: No abstract text available
Text: NDF05N50Z, NDD05N50Z N-Channel Power MOSFET 500 V, 1.5 W Features • • • • • • Low ON Resistance Low Gate Charge ESD Diode−Protected Gate 100% Avalanche Tested 100% Rg Tested These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
|
Original
|
PDF
|
NDF05N50Z,
NDD05N50Z
JESD22-A114)
NDF05N50Z/D
|
Untitled
Abstract: No abstract text available
Text: NDF10N60Z N-Channel Power MOSFET 600 V, 0.75 W Features • • • • • • Low ON Resistance Low Gate Charge ESD Diode−Protected Gate 100% Avalanche Tested 100% Rg Tested These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com
|
Original
|
PDF
|
NDF10N60Z
NDF10N60Z/D
|
Si4837DY
Abstract: Si4837DY-T1
Text: Si4837DY Vishay Siliconix P-Channel 30-V D-S MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY VDS (V) - 30 rDS(on) (W) D TrenchFETr Power MOSFET D LITTLE FOOTr Plus Schottky D 100% Rg Tested ID (A) 0.020 @ VGS = - 10 V 8.3 0.030 @ VGS = - 4.5 V
|
Original
|
PDF
|
Si4837DY
Si4837DY-T1
S-31726--Rev.
18-Aug-03
|
Untitled
Abstract: No abstract text available
Text: NDF10N60Z N-Channel Power MOSFET 600 V, 0.75 W Features • • • • • • Low ON Resistance Low Gate Charge ESD Diode−Protected Gate 100% Avalanche Tested 100% Rg Tested These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com
|
Original
|
PDF
|
NDF10N60Z
NDF10N60Z/D
|
|
|
NDF05N50ZG
Abstract: NDF05N50 5n50zg NDD05N50 50ZG NDD05N50Z-1G NDD05N50ZT4G
Text: NDF05N50Z, NDD05N50Z N-Channel Power MOSFET 500 V, 1.5 W Features • • • • • • Low ON Resistance Low Gate Charge ESD Diode−Protected Gate 100% Avalanche Tested 100% Rg Tested These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
|
Original
|
PDF
|
NDF05N50Z,
NDD05N50Z
JESD22-A114)
NDF05N50Z/D
NDF05N50ZG
NDF05N50
5n50zg
NDD05N50
50ZG
NDD05N50Z-1G
NDD05N50ZT4G
|
NDD03N80Z-1G
Abstract: No abstract text available
Text: NDD03N80Z, NDF03N80Z N-Channel Power MOSFET 800 V, 4.5 W Features • • • • ESD Diode−Protected Gate 100% Avalanche Tested 100% Rg Tested These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com V BR DSS RDS(ON) MAX
|
Original
|
PDF
|
NDD03N80Z,
NDF03N80Z
JESD22-A114)
NDD03N80Z/D
NDD03N80Z-1G
|
Untitled
Abstract: No abstract text available
Text: Si4837DY Vishay Siliconix P-Channel 30-V D-S MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY VDS (V) - 30 rDS(on) (W) D TrenchFETr Power MOSFET D LITTLE FOOT Plust Schottky D 100% Rg Tested ID (A) 0.020 @ VGS = - 10 V 8.3 0.030 @ VGS = - 4.5 V
|
Original
|
PDF
|
Si4837DY
Si4837DY-T1
S-31726--Rev.
18-Aug-03
|
369AA
Abstract: No abstract text available
Text: NDD03N80Z, NDF03N80Z N-Channel Power MOSFET 800 V, 4.5 W Features • • • • ESD Diode−Protected Gate 100% Avalanche Tested 100% Rg Tested These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com V BR DSS RDS(ON) MAX
|
Original
|
PDF
|
NDD03N80Z,
NDF03N80Z
JESD22-A114)
NDD03N80Z/D
369AA
|
semikron skt 10
Abstract: No abstract text available
Text: SKT Tabl. 10,3 Qu RG bond. power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter Absolute Maximum Ratings Symbol Conditions 4/* " 5 *1( $% - 6. ! *1( $%& ' ! *( ) 0 ! *1( $%
|
Original
|
PDF
|
|
NDF10N60ZG
Abstract: NDF10N60ZH NDF10N60Z
Text: NDF10N60Z N-Channel Power MOSFET 600 V, 0.75 W Features • • • • • • Low ON Resistance Low Gate Charge ESD Diode−Protected Gate 100% Avalanche Tested 100% Rg Tested These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com
|
Original
|
PDF
|
NDF10N60Z
JESD22-A114)
NDF10N60Z/D
NDF10N60ZG
NDF10N60ZH
|
Untitled
Abstract: No abstract text available
Text: Si4837DY Vishay Siliconix P-Channel 30-V D-S MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY VDS (V) - 30 rDS(on) (W) D TrenchFETr Power MOSFET D LITTLE FOOTr Plus Schottky D 100% Rg Tested ID (A) 0.020 @ VGS = - 10 V 8.3 0.030 @ VGS = - 4.5 V
|
Original
|
PDF
|
Si4837DY
Si4837DY-T1
08-Apr-05
|
NDF10N60ZG
Abstract: No abstract text available
Text: NDF10N60Z N-Channel Power MOSFET 600 V, 0.75 W Features • • • • • • Low ON Resistance Low Gate Charge ESD Diode−Protected Gate 100% Avalanche Tested 100% Rg Tested These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com
|
Original
|
PDF
|
NDF10N60Z
JESD22-A114)
NDF10N60Z/D
NDF10N60ZG
|
1SV147
Abstract: toshiba lable information
Text: 1SV 147 TOSHIBA TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1 S V 1 47 Unit in mm FM RADIO BAND TUNING APPLICATIONS. • • Low rg : rg = 0.30 Typ. Small Package q 5 5 MAX. MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Reverse Voltage
|
OCR Scan
|
PDF
|
1SV147
1SV147
toshiba lable information
|
1SV228
Abstract: No abstract text available
Text: 1SV228 TOSHIBA 1 SV2 2 8 TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE Unit in mm ELECTRONIC TUNING APPLICATIONS OF FM RECEIVERS. • • Low rg : rg = 0.30 Typ. Small Package 2 .5 1. 5 + - + - 0.5 0.3 0 .25 0 .15 öo + I È3- MAXIMUM RATINGS (Ta = 25°C)
|
OCR Scan
|
PDF
|
1SV228
SC-59
10juA
f-100MHz
1SV228
|
