CMS-S040-020
Abstract: No abstract text available
Text: CMS-S040-020 SCHOTTKY BARRIER DIODE Features : * Extremely low forward volts * Guard ring protection * Low reverse leakage current Chip size A : 1.016 * 1.016 mm 2 Bond Pad size(B) : 0.889 * 0.889 mm 2 Thickness : 300µm ± 20µm Metalization : Anode Ti/Ni/Ag
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CMS-S040-020
CMS-S040-020
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CMS-S040-040
Abstract: No abstract text available
Text: CMS-S040-040 SCHOTTKY BARRIER DIODE Features : * Extremely low forward volts * Guard ring protection * Low reverse leakage current Chip size A : 1.016 * 1.016 mm 2 Bond Pad size(B) : 0.889 * 0.889 mm 2 Thickness : 300µm ± 20µm Metalization : Anode Ti/Ni/Ag
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CMS-S040-040
CMS-S040-040
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9909
Abstract: CMS-S040-040L
Text: CMS-S040-040L SCHOTTKY BARRIER DIODE Features : * Extremely low forward volts * Guard ring protection * Low reverse leakage current Chip size A : 1.016 * 1.016 mm 2 Bond Pad size(B) : 0.889 * 0.889 mm 2 Thickness : 300µm ± 20µm Metalization : Anode Ti/Ni/Ag
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CMS-S040-040L
9909
CMS-S040-040L
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Untitled
Abstract: No abstract text available
Text: diode terminator networks EU features • • • • • • Fast reverse recovery time Fast turn on time Low capacitance SMD packages 16 kV IEC61000-4-2 capable Products with lead-free terminations meet EU RoHS and China RoHS requirements dimensions and construction
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IEC61000-4-2
225mw
400mw
1000mw
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S06 SMD
Abstract: DIODE s04 a n08 SMD smd code dn N08 sot23 ht q20 DNA 20 PINS CODE DIODE s04 S03 SMD
Text: resistors DN X diode terminator network EU features • • • • Fast reverse recovery time • Fast turn on time Low capacitance • SMD packages 16 kV IEC61000-4-2 capable Products with lead-free terminations meet EU RoHS and China RoHS requirements
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IEC61000-4-2
225mw
S06 SMD
DIODE s04 a
n08 SMD
smd code dn
N08 sot23
ht q20
DNA 20 PINS CODE
DIODE s04
S03 SMD
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N08 sot23
Abstract: S06 SMD 16kv diode n08 SMD
Text: diode terminator network EU features • • • • • • Fast reverse recovery time Fast turn on time Low capacitance SMD packages 16 kV IEC61000-4-2 capable Products with lead-free terminations meet EU RoHS and China RoHS requirements dimensions and construction
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IEC61000-4-2
225mw
400mw
1000mw
1000mw
N08 sot23
S06 SMD
16kv diode
n08 SMD
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S0424
Abstract: Si4837DY
Text: Si4837DY New Product Vishay Siliconix P-Channel 30-V D-S MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY VDS (V) –30 rDS(on) (W) D TrenchFETr Power MOSFET D LITTLE FOOT Plust Schottky ID (A) 0.020 @ VGS = –10 V 8.3 0.030 @ VGS = –4.5 V 6.8
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Si4837DY
S-04246--Rev.
16-Jul-01
S0424
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DIODE s04 a
Abstract: smd code dn S06 SMD SMD Transistor 1f n08 SMD DIODE s04
Text: 1733 Reader's Spreadspg189-328:1570 Reader's Spreadspg189-328 1/27/09 4:44 PM Page 5 PMS 300 neg. Black neg. DN X diode terminator network EU features circuit protection • • • • Fast reverse recovery time • Fast turn on time Low capacitance • SMD packages
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Spreadspg189-328
Spreadspg189-328
IEC61000-4-2
225mw
DIODE s04 a
smd code dn
S06 SMD
SMD Transistor 1f
n08 SMD
DIODE s04
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s04a
Abstract: LM2665 LP2980-3 so4a LM266X so4a marking
Text: LM2665 Switched Capacitor Voltage Converter General Description Features The LM2665 CMOS charge-pump voltage converter operates as a voltage doubler for an input voltage in the range of +2.5V to +5.5V. Two low cost capacitors and a diode needed during start-up are used in this circuit to provide up
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LM2665
AN-1142:
LM2661/3/4
15-Nov-99
6-Dec-2000]
s04a
LP2980-3
so4a
LM266X
so4a marking
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LM2665
Abstract: sot-23-6 step-down REGULATOR
Text: LM2665 Switched Capacitor Voltage Converter General Description Features The LM2665 CMOS charge-pump voltage converter operates as a voltage doubler for an input voltage in the range of +2.5V to +5.5V. Two low cost capacitors and a diode needed during start-up are used in this circuit to provide up
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LM2665
perforM2665
AN-1142:
LM2661/3/4
6-Dec-2000]
sot-23-6 step-down REGULATOR
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Si4814DY
Abstract: No abstract text available
Text: Si4814DY New Product Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 rDS(on) (W) ID (A) 0.021 @ VGS = 10 V 7.0 0.0325 @ VGS = 4.5 V 5.6 0.020 @ VGS = 10 V 7.4 0.0265 @ VGS = 4.5 V 8.4 FEATURES
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Si4814DY
S-04544--Rev.
20-Aug-01
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13lt 01 g
Abstract: 13lt SUB50P05-13LT
Text: SUB50P05-13LT Vishay Siliconix P-Channel 55-V D-S MOSFET with Sensing Diode PRODUCT SUMMARY V(BR)DSS (V) –55 rDS(on) (W) ID (A) 0.0135 @ VGS = –10 V –50a 0.019 @ VGS = –4.5 V –50a S D2PAK-5L T1 D1 G D2 T2 1 2 3 4 5 D G D T1 P-Channel MOSFET S T2
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SUB50P05-13LT
S-04525--Rev.
20-Aug-01
13lt 01 g
13lt
SUB50P05-13LT
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diode F 82 bp
Abstract: DIODE BP ZF8.2 EC10QSO ZF-8.2 Zf12 smd zener bp ZF24 ZF30 Q05CT
Text: QUANTUM MARKETING INTERNATIONA* a n Nihon Inter Electronics Corporation AUTHORIZED AGENT Case Style Type Circuit E C 10DS1 EC10DS2 EC10DS4 EC10DS6 R ectifier Diode D 64 lo V FM (A) (V) 1.0 1.1 .55 EC10Q S03 EC10QSO_4 Schottky Barrier Diode (S.B.D.) Single C hip
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10DS1
EC10DS2
EC10DS4
EC10DS6
EC10Q
EC10QSO
10QS05
10QS06
EC10QS10
EC15Q
diode F 82 bp
DIODE BP
ZF8.2
ZF-8.2
Zf12
smd zener bp
ZF24
ZF30
Q05CT
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1N3595
Abstract: AM-08
Text: L ALLEGRO M ICROSYSTEM S INC □S0433Ö 0 GD 3 7 Û Ô 3 • ALGR T-91-Û1 PROCESS TRR Process TRR Medium-Speed Switching Diode Process TRR is a non-gold-doped silicon epitaxial diode designed to 1N3595 specifications and used in medium-speed switching applications.
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S0433Ã
0G037Ã
T-91-Ã
1N3595
500mA
100mA
AM-08
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ci 4502
Abstract: ECT180
Text: 4A 35V Tjw150V 7¿Zfr n íZ h FSQS04A035 Fully Molded similar to TO-220AC ttfl» Nihon Inter Electronics Corporation Specification. Construction '> 3 * Schottky Barrier Diode Application High Frequency Rectification I I MAXIMUM RATINGS Ta=25cC: Unless otherwise specified
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35VTjw150V
FSQS04A035
50HzIESmffiKftÃ
FSQS04A035
20mVrms
100kHz
UL94V-0
ci 4502
ECT180
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Diodo Schottky
Abstract: DIODO
Text: 4A 65VT»150t Fully Molded similar to TO-220AC FSQS04A065 ttfl« 0 * ^ Nihon Inter Electronics Corporation Specification. lie 'S3 y Construction f f lìÉ Application h K ' 7 ? ' 4 Schottky Barrier Diode High Frequency Rectification MAXIMUM RATINGS Ta=25cC Unless otherwise specified
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65VTjw150V
O-22QAC
FSQS04A065
50Hzhalf
FSQS04A065
20mVRMS
100kHz
UL94V-0
Diodo Schottky
DIODO
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Untitled
Abstract: No abstract text available
Text: VN10KC Vishay Siliconix New Product N-Channel 60-V D-S MOSFET , VA PRODUCT SUMMARY V (BR)DSS M in (V) *DS(on) M a x (£2) VGS(th )(V ) Id (A) 60 5 e v GS = io v 0.8 to 2.5 0.31 FEATURES BENEFITS APPLICATIONS • • Zener Diode Input Protected Low O n-Resistance: 3 Q
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VN10KC
SC-59
S-04279--
16-Jul-01
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marking JB SCHOTTKY BARRIER DIODE
Abstract: No abstract text available
Text: 4A45VTjw150V ~>3 -y h * —<•<! F S Q S 0 4 A 0 4 5 f f l iÉ Application Fully Molded similar to TÖ-220AC 0 * ^ t t « * Specification. Nihon Inter Electronics Corporation y T y 4 Hr— K '> 3 -y h Construction F Schottky Barrier Dkxie Schottky Barrier Diode
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Tjw150V
-220AC
FSQS04A045
UL94V-0
marking JB SCHOTTKY BARRIER DIODE
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logos 4012B
Abstract: 1LB553 Rauland ETS-003 Silec Semiconductors MCP 7833 4057A transistor sr52 74c912 1TK552 74S485
Text: L p i > « , * S E m Ic O N VOLUM E 3 INTERNATIONAL INTEGRATED CIRCUITS INDEX 5th EDITION 1985 Revised June 1985 COMPILED AND PUBLISHED BY S E M IC O N IN D E X E S L IM IT E D THE SEMICON INDEX SERIES CONSISTS OF VOLUME 1 TRANSISTOR INDEX VOLUME 2 DIODE & SCR INDEX
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TDA1510
TDA1510A
logos 4012B
1LB553
Rauland ETS-003
Silec Semiconductors
MCP 7833
4057A
transistor sr52
74c912
1TK552
74S485
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453 optocoupler
Abstract: Transistor 2TY SOT230
Text: Product specification Philips Semiconductors CNX62A High-voltage optocoupler 3UALITY TECHNOLOGIES CORP 57E D 74bb051 0004570 S04 • Ö T V FEATURES • High current transfer ratio and a low saturation voltage, making the devices suitable for use with TTL integrated circuits
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CNX62A
74bb051
CNX62A
OT230
E90700
BS415ptocouplers
OT212.
74bbflSl
0DD4fl03
MSA048-2
453 optocoupler
Transistor 2TY
SOT230
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Untitled
Abstract: No abstract text available
Text: STP80NS04Z N - CHANNEL CLAMPED 7.5mG - 80A - TO-220 FULLY PROTECTED MESH OVERLAY MOSFET TYPE STP 80N S04Z V dss R d S o ii Id CLAM PED <0.008 Q. 80 A . TYPICAL RDs(on) = 0.0075 £2 . 100% AVALANCHE TESTED . LOW CAPACITANCE AND GATE CHARGE . 175 °C MAXIMUM JUNCTION
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STP80NS04Z
O-220
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Untitled
Abstract: No abstract text available
Text: STP60NS04Z N - CHANNEL CLAMPED 10m£2 - 60A - TO-220 FULLY PROTECTED MESH OVERLAY MOSFET TYPE STP60N S04Z V R d S o ii Id <0.015 Q. 60 A dss CLAM PED . TYPICAL Ros(on) =0.010 Î2 . 100% AVALANCHE TESTED . LOW CAPACITANCE AND GATE CHARGE . 175 °C MAXIMUM JUNCTION
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STP60NS04Z
O-220
STP60N
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Untitled
Abstract: No abstract text available
Text: STP60NS04Z N - CHANNEL CLAMPED 10m ^ - 60A - T0-220 FULLY PROTECTED MESH OVERLAY MOSFET PRELIMINARY DATA TYPE STP60N S04Z V dss R dS oii Id CLAM PED < 0 .0 1 5 Q. 60 A . . TYPICAL RDS(on) =0.010 £2 100% AVALANCHE TESTED . LOW CAPACITANCE AND GATE CHARGE
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STP60NS04Z
T0-220
STP60N
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Untitled
Abstract: No abstract text available
Text: STP80NS04Z N - CHANNEL CLAMPED 7.5mQ - 80A - TO-220 FULLY PROTECTED MESH OVERLAY MOSFET TYPE STP80N S04Z . . . . V ds s RDS on Id CLAM PED < 0 .0 0 8 Q 80 A TYPICAL RDS(on) = 0.0075 Î2 100% AVALANCHE TESTED LOW CAPACITANCE AND GATE CHARGE 175 °C MAXIMUM JUNCTION
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STP80NS04Z
O-220
STP80N
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