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    DIODE S3K Search Results

    DIODE S3K Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE S3K Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    RB160-40

    Abstract: KBPC10010 MP1008 zener diode sod80 rohm MMBZ524B RLR4002 SMAZ56 DIODE US1J KBPC5010 SMAJ11
    Text: Small Signal Switching and Schottky Diodes Family Application Comchip Vishay / G ON-Semi Diode Inc. Philips Rohm Switching Diode High Speed CDSL4148 LL4148 LL4148 LL4148 PMLL4148 RLS4148 Family Application Comchip Vishay / G ON-Semi CDSF335 BAS16WS CDSF4148


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    CDSL4148 LL4148 PMLL4148 RLS4148 CDSF335 BAS16WS CDSF4148 1N4148WS RB160-40 KBPC10010 MP1008 zener diode sod80 rohm MMBZ524B RLR4002 SMAZ56 DIODE US1J KBPC5010 SMAJ11 PDF

    Untitled

    Abstract: No abstract text available
    Text: S3K2 Pin Diode Switch Single Pole, Three Throw Absorptive Features: • Incorporated TTL-compatible driver for convenient system integration and operates from +5 V and -15 V DC power supplies. • DC blocks at all RF ports. • Ruggedized construction. •


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    Untitled

    Abstract: No abstract text available
    Text: S3K1 Pin Diode Switch Single Pole, Three Throw Absorptive Features: • Incorporated TTL-compatible driver for convenient system integration and operates from +5 V and -15 V DC power supplies. • DC blocks at all RF ports. • Ruggedized construction. •


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    Untitled

    Abstract: No abstract text available
    Text: S3K1R Pin Diode Switch Single Pole, Three Throw Reflective Features: • Incorporated TTL-compatible driver for convenient system integration and operates from +5 V and -15 V DC power supplies. • DC blocks at all RF ports. • Ruggedized construction. •


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    Untitled

    Abstract: No abstract text available
    Text: S3K2R Pin Diode Switch Single Pole, Three Throw Reflective Features: • Incorporated TTL-compatible driver for convenient system integration and operates from +5 V and -15 V DC power supplies. • DC blocks at all RF ports. • Ruggedized construction. •


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    DI108S

    Abstract: SK5100 CP2506 sb5200 SB840
    Text: Diode & Rectifiers Diode & Rectifiers MERITEK RoHS TABLE OF CONTENT • PLASTIC PASSIVATED JUNCTION RECTIFIER o General Purpose


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    38x45Â DI108S SK5100 CP2506 sb5200 SB840 PDF

    OZ 9983

    Abstract: mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45
    Text: MBRB3030CTL Advance Information SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: http://onsemi.com Features: • Dual Diode Construction —


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    MBRB3030CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 OZ 9983 mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45 PDF

    WTE DIODE S3M

    Abstract: S3J marking DIODE
    Text: S3A – S3M WTE POWER SEMICONDUCTORS Pb 3.0A SURFACE MOUNT GLASS PASSIVATED STANDARD DIODE Features ! Glass Passivated Die Construction ! ! ! ! ! ! Ideally Suited for Automatic Assembly B Low Forward Voltage Drop Surge Overload Rating to 100A Peak Low Power Loss


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    SMC/DO-214AB SMC/DO-214AB, MIL-STD-750, WTE DIODE S3M S3J marking DIODE PDF

    Untitled

    Abstract: No abstract text available
    Text: S3AB – S3MB WTE POWER SEMICONDUCTORS Pb 3.0A SURFACE MOUNT GLASS PASSIVATED STANDARD DIODE Features ! Glass Passivated Die Construction ! ! ! ! ! ! Ideally Suited for Automatic Assembly B Low Forward Voltage Drop Surge Overload Rating to 100A Peak Low Power Loss


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    SMB/DO-214AA SMB/DO-214AA, MIL-STD-750, PDF

    1n5822 trr

    Abstract: A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50
    Text: MBRD1035CTL SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay


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    MBRD1035CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 1n5822 trr A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50 PDF

    br 123 s

    Abstract: BAS54A BR3005 MS15N50 sod-23 BAS54C
    Text: Bruckewell Technology Corp., Ltd. Your Best Partner Discrete Semiconductor Product Catalogue 2015 version Diode/ Rectifier MOSFET TVS/ ESD Protector Comp pany Profile P e Bru uckewell teechnology corp. c registe ered in Dela aware, USA A and total capital


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    O-252 O-277A O-277B MA/DO-214AC DO-214A MC/DO-214AB br 123 s BAS54A BR3005 MS15N50 sod-23 BAS54C PDF

    mur1650

    Abstract: T4 SOD-123 1N4004 MR2510 1N2069 SES5001 mur420 equivalent CT PR1504 equivalent for fr302 diode mur 460 switch diode A14A surface mount
    Text: MBRB1045 Preferred Device SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and


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    MBRB1045 VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 mur1650 T4 SOD-123 1N4004 MR2510 1N2069 SES5001 mur420 equivalent CT PR1504 equivalent for fr302 diode mur 460 switch diode A14A surface mount PDF

    FE16B

    Abstract: mbr3045pt transistor FR102 SOD-123 1N4007 sod-123 BYV43-45 BYV19-45 MUR1660CT equivalent MUR460 BL FEP16DT 0032 mur420 equivalent
    Text: MBRP60035CTL Preferred Device POWERTAP II SWITCHMODE Power Rectifier The SWITCHMODE Power Rectifier uses the Schottky Barrier principle with a platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction —


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    MBRP60035CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 FE16B mbr3045pt transistor FR102 SOD-123 1N4007 sod-123 BYV43-45 BYV19-45 MUR1660CT equivalent MUR460 BL FEP16DT 0032 mur420 equivalent PDF

    DIODE SOT-23 PACKAGE

    Abstract: dbs107 mmbd2836 Bridge rectifier DF08 s1g 28 diode BAS21 DL4148 LL4148 LL4448 MMBD1402
    Text: SURFACE MOUNT: Switching Diodes MELF & SOT-23 SURFACE MOUNT SWITCHING DIODE RFE CrossPower Peak Max.Average Part Number Reference Dissipation Voltage Rect. Current Forward Voltage Pd mW VZM(V) IO(mA) VF(V)@IF(mA) Maximum Rev. Current Max. Reverse Package


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    OT-23 LL4148 DL4148 500mW LL4448 DL4448 OT-23 Part54G DBS155G DIODE SOT-23 PACKAGE dbs107 mmbd2836 Bridge rectifier DF08 s1g 28 diode BAS21 DL4148 LL4148 LL4448 MMBD1402 PDF

    Untitled

    Abstract: No abstract text available
    Text: S3AB – S3MB 3.0A SURFACE MOUNT GLASS PASSIVATED STANDARD DIODE WON-TOP ELECTRONICS Pb Features  Glass Passivated Die Construction       Ideally Suited for Automatic Assembly Low Forward Voltage Drop Surge Overload Rating to 100A Peak


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    SMB/DO-214AA, MIL-STD-750, PDF

    Untitled

    Abstract: No abstract text available
    Text: S3AB – S3MB WTE POWER SEMICONDUCTORS Pb 3.0A SURFACE MOUNT GLASS PASSIVATED STANDARD DIODE Features  Glass Passivated Die Construction       Ideally Suited for Automatic Assembly B Low Forward Voltage Drop Surge Overload Rating to 100A Peak Low Power Loss


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    SMB/DO-214AA SMB/DO-214AA, PDF

    PK MUR 460

    Abstract: pk mur460 PK MUR460 1110 gi756 diode carrier 30bq015 USD1120 0525 Transient Voltage Suppressors diode A14A surface SS14 SOD123 MBRD360
    Text: MBR340 Preferred Device Axial Lead Rectifier . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low–voltage,


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    MBR340 VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 PK MUR 460 pk mur460 PK MUR460 1110 gi756 diode carrier 30bq015 USD1120 0525 Transient Voltage Suppressors diode A14A surface SS14 SOD123 MBRD360 PDF

    Untitled

    Abstract: No abstract text available
    Text: S3A – S3M WTE POWER SEMICONDUCTORS Pb 3.0A SURFACE MOUNT GLASS PASSIVATED STANDARD DIODE Features  Glass Passivated Die Construction       Ideally Suited for Automatic Assembly B Low Forward Voltage Drop Surge Overload Rating to 100A Peak Low Power Loss


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    SMC/DO-214AB SMC/DO-214AB, PDF

    secos gmbh

    Abstract: c945 p 331 transistor npn SM2150AM SM1150AM c945 p 331 transistor SMBJ11CA 2sd2142 SM4005A SSG8 pzt649
    Text: Table of Contents Diodes Rectifier Schottky Rectifier 》Low VF Schottky Rectifier C1 - C5 Fast Rectifier D1 - D3 Low Loss Super Fast Bridge E1 - E3 F1 High Efficiency G1 - G4 Schottky H1 - H3 Switching I1- I3 PiN Diode J1 Bridge Rectifier 》 Fast Bridge Rectifiers


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    SGSR809-A SC-59 SGSR809-B SGSR809-C SGSR809-D SGSR809-E secos gmbh c945 p 331 transistor npn SM2150AM SM1150AM c945 p 331 transistor SMBJ11CA 2sd2142 SM4005A SSG8 pzt649 PDF

    MR2835S equivalent

    Abstract: A14F diode 1n5404 diode FE16A MUR860 equivalent MUR1620CT MUR420 diode usd745c equivalent MBRD360 PR1502
    Text: MBR6045PT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction — Terminals 1 and 3 May Be Connected


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    MBR6045PT VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 MR2835S equivalent A14F diode 1n5404 diode FE16A MUR860 equivalent MUR1620CT MUR420 diode usd745c equivalent MBRD360 PR1502 PDF

    S3K60

    Abstract: Low Forward Voltage Diode
    Text: Super Fast Recovery Diode Axial Diode OUTLINE S3K60 Unit : m m Package : AX14 W eight 1.06g Typ 600V 3A 2 ' Feature 26.5 • í iü í E F R D • High Voltage Supper FRD • trr=100ns • trr= 100ns • V f =1.3V • Low V f=1 .3V N B 26.5 -Li. MA «<?


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    S3K60 100ns S3K60 J533-1 Low Forward Voltage Diode PDF

    Untitled

    Abstract: No abstract text available
    Text: Super Fast Recovery Diode Axial Diode Wtm OUTLINE Package : AX14 S3K60 Unit-mm Weight 1.06g Typ 600V 3A Feature • High Voltage Supper FRD • trr=100ns • trr=100ns • ® V f =1.3V 26.5 26.5 • H lf f iF R D iT > H«- • Low V f=1 ,3V * tS fU B M W


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    S3K60 100ns PDF

    S3K60

    Abstract: S3L60 WMM marking code
    Text: Super Fast Recovery Diode Axial Diode Wtm OUTLINE Package : AX14 S3K60 Unit-mm Weight 1.06g Typ 600V 3A 26.5 26.5 Feature • H lf f iF R D • High Voltage Supper FRD • trr=100ns iT > • trr=100ns • Low V f=1 ,3V • ® V f =1.3V H«- * tS fU B M W


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    S3K60 100ns waveli50Hz S3K60 S3L60 WMM marking code PDF

    Untitled

    Abstract: No abstract text available
    Text: SP3T SWITCHES Advanced Conffoi Components H ik . The S3 series of single pole, three throw PIN diode switches span the frequency range of 10MHz to 18GHz and are available with absorptive or reflective inputs. The switches are available in a wide variety of


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    10MHz 18GHz 26GHz /-12V, /-15V S3-0303B PDF