RB160-40
Abstract: KBPC10010 MP1008 zener diode sod80 rohm MMBZ524B RLR4002 SMAZ56 DIODE US1J KBPC5010 SMAJ11
Text: Small Signal Switching and Schottky Diodes Family Application Comchip Vishay / G ON-Semi Diode Inc. Philips Rohm Switching Diode High Speed CDSL4148 LL4148 LL4148 LL4148 PMLL4148 RLS4148 Family Application Comchip Vishay / G ON-Semi CDSF335 BAS16WS CDSF4148
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CDSL4148
LL4148
PMLL4148
RLS4148
CDSF335
BAS16WS
CDSF4148
1N4148WS
RB160-40
KBPC10010
MP1008
zener diode sod80 rohm
MMBZ524B
RLR4002
SMAZ56
DIODE US1J
KBPC5010
SMAJ11
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Untitled
Abstract: No abstract text available
Text: S3K2 Pin Diode Switch Single Pole, Three Throw Absorptive Features: • Incorporated TTL-compatible driver for convenient system integration and operates from +5 V and -15 V DC power supplies. • DC blocks at all RF ports. • Ruggedized construction. •
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Untitled
Abstract: No abstract text available
Text: S3K1 Pin Diode Switch Single Pole, Three Throw Absorptive Features: • Incorporated TTL-compatible driver for convenient system integration and operates from +5 V and -15 V DC power supplies. • DC blocks at all RF ports. • Ruggedized construction. •
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Untitled
Abstract: No abstract text available
Text: S3K1R Pin Diode Switch Single Pole, Three Throw Reflective Features: • Incorporated TTL-compatible driver for convenient system integration and operates from +5 V and -15 V DC power supplies. • DC blocks at all RF ports. • Ruggedized construction. •
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Untitled
Abstract: No abstract text available
Text: S3K2R Pin Diode Switch Single Pole, Three Throw Reflective Features: • Incorporated TTL-compatible driver for convenient system integration and operates from +5 V and -15 V DC power supplies. • DC blocks at all RF ports. • Ruggedized construction. •
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DI108S
Abstract: SK5100 CP2506 sb5200 SB840
Text: Diode & Rectifiers Diode & Rectifiers MERITEK RoHS TABLE OF CONTENT • PLASTIC PASSIVATED JUNCTION RECTIFIER o General Purpose
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38x45Â
DI108S
SK5100
CP2506
sb5200
SB840
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OZ 9983
Abstract: mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45
Text: MBRB3030CTL Advance Information SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: http://onsemi.com Features: • Dual Diode Construction —
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MBRB3030CTL
VHE205
VHE210
VHE215
VHE220
VHE2401
VHE2402
VHE2403
VHE2404
VHE605
OZ 9983
mbr3045pt transistor
940 629 MOTOROLA 220
Motorola marking code K 652 TO-220
MUR3030
TRANSISTOR BC 456
Diode Marking 1N4007 Motorola
1N2069
A14F diode
BYV33-45
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WTE DIODE S3M
Abstract: S3J marking DIODE
Text: S3A – S3M WTE POWER SEMICONDUCTORS Pb 3.0A SURFACE MOUNT GLASS PASSIVATED STANDARD DIODE Features ! Glass Passivated Die Construction ! ! ! ! ! ! Ideally Suited for Automatic Assembly B Low Forward Voltage Drop Surge Overload Rating to 100A Peak Low Power Loss
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SMC/DO-214AB
SMC/DO-214AB,
MIL-STD-750,
WTE DIODE S3M
S3J marking DIODE
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Untitled
Abstract: No abstract text available
Text: S3AB – S3MB WTE POWER SEMICONDUCTORS Pb 3.0A SURFACE MOUNT GLASS PASSIVATED STANDARD DIODE Features ! Glass Passivated Die Construction ! ! ! ! ! ! Ideally Suited for Automatic Assembly B Low Forward Voltage Drop Surge Overload Rating to 100A Peak Low Power Loss
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SMB/DO-214AA
SMB/DO-214AA,
MIL-STD-750,
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1n5822 trr
Abstract: A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50
Text: MBRD1035CTL SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay
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MBRD1035CTL
VHE205
VHE210
VHE215
VHE220
VHE2401
VHE2402
VHE2403
VHE2404
VHE605
1n5822 trr
A14F diode
FR105 diode
MR850
diode A14A
BYV27 200 TAP
LT2A02
MBR3100 0630
1N4007 sod-123
SES50
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br 123 s
Abstract: BAS54A BR3005 MS15N50 sod-23 BAS54C
Text: Bruckewell Technology Corp., Ltd. Your Best Partner Discrete Semiconductor Product Catalogue 2015 version Diode/ Rectifier MOSFET TVS/ ESD Protector Comp pany Profile P e Bru uckewell teechnology corp. c registe ered in Dela aware, USA A and total capital
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O-252
O-277A
O-277B
MA/DO-214AC
DO-214A
MC/DO-214AB
br 123 s
BAS54A
BR3005
MS15N50
sod-23
BAS54C
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mur1650
Abstract: T4 SOD-123 1N4004 MR2510 1N2069 SES5001 mur420 equivalent CT PR1504 equivalent for fr302 diode mur 460 switch diode A14A surface mount
Text: MBRB1045 Preferred Device SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and
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MBRB1045
VHE205
VHE210
VHE215
VHE220
VHE2401
VHE2402
VHE2403
VHE2404
VHE605
mur1650
T4 SOD-123 1N4004
MR2510
1N2069
SES5001
mur420 equivalent
CT PR1504
equivalent for fr302 diode
mur 460 switch
diode A14A surface mount
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FE16B
Abstract: mbr3045pt transistor FR102 SOD-123 1N4007 sod-123 BYV43-45 BYV19-45 MUR1660CT equivalent MUR460 BL FEP16DT 0032 mur420 equivalent
Text: MBRP60035CTL Preferred Device POWERTAP II SWITCHMODE Power Rectifier The SWITCHMODE Power Rectifier uses the Schottky Barrier principle with a platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction —
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MBRP60035CTL
VHE205
VHE210
VHE215
VHE220
VHE2401
VHE2402
VHE2403
VHE2404
VHE605
FE16B
mbr3045pt transistor
FR102 SOD-123
1N4007 sod-123
BYV43-45
BYV19-45
MUR1660CT equivalent
MUR460 BL
FEP16DT 0032
mur420 equivalent
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DIODE SOT-23 PACKAGE
Abstract: dbs107 mmbd2836 Bridge rectifier DF08 s1g 28 diode BAS21 DL4148 LL4148 LL4448 MMBD1402
Text: SURFACE MOUNT: Switching Diodes MELF & SOT-23 SURFACE MOUNT SWITCHING DIODE RFE CrossPower Peak Max.Average Part Number Reference Dissipation Voltage Rect. Current Forward Voltage Pd mW VZM(V) IO(mA) VF(V)@IF(mA) Maximum Rev. Current Max. Reverse Package
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OT-23
LL4148
DL4148
500mW
LL4448
DL4448
OT-23
Part54G
DBS155G
DIODE SOT-23 PACKAGE
dbs107
mmbd2836
Bridge rectifier DF08
s1g 28 diode
BAS21
DL4148
LL4148
LL4448
MMBD1402
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Untitled
Abstract: No abstract text available
Text: S3AB – S3MB 3.0A SURFACE MOUNT GLASS PASSIVATED STANDARD DIODE WON-TOP ELECTRONICS Pb Features Glass Passivated Die Construction Ideally Suited for Automatic Assembly Low Forward Voltage Drop Surge Overload Rating to 100A Peak
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SMB/DO-214AA,
MIL-STD-750,
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Untitled
Abstract: No abstract text available
Text: S3AB – S3MB WTE POWER SEMICONDUCTORS Pb 3.0A SURFACE MOUNT GLASS PASSIVATED STANDARD DIODE Features Glass Passivated Die Construction Ideally Suited for Automatic Assembly B Low Forward Voltage Drop Surge Overload Rating to 100A Peak Low Power Loss
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SMB/DO-214AA
SMB/DO-214AA,
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PK MUR 460
Abstract: pk mur460 PK MUR460 1110 gi756 diode carrier 30bq015 USD1120 0525 Transient Voltage Suppressors diode A14A surface SS14 SOD123 MBRD360
Text: MBR340 Preferred Device Axial Lead Rectifier . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low–voltage,
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MBR340
VHE205
VHE210
VHE215
VHE220
VHE2401
VHE2402
VHE2403
VHE2404
VHE605
PK MUR 460
pk mur460
PK MUR460 1110
gi756 diode
carrier 30bq015
USD1120
0525 Transient Voltage Suppressors
diode A14A surface
SS14 SOD123
MBRD360
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Untitled
Abstract: No abstract text available
Text: S3A – S3M WTE POWER SEMICONDUCTORS Pb 3.0A SURFACE MOUNT GLASS PASSIVATED STANDARD DIODE Features Glass Passivated Die Construction Ideally Suited for Automatic Assembly B Low Forward Voltage Drop Surge Overload Rating to 100A Peak Low Power Loss
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SMC/DO-214AB
SMC/DO-214AB,
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secos gmbh
Abstract: c945 p 331 transistor npn SM2150AM SM1150AM c945 p 331 transistor SMBJ11CA 2sd2142 SM4005A SSG8 pzt649
Text: Table of Contents Diodes Rectifier Schottky Rectifier 》Low VF Schottky Rectifier C1 - C5 Fast Rectifier D1 - D3 Low Loss Super Fast Bridge E1 - E3 F1 High Efficiency G1 - G4 Schottky H1 - H3 Switching I1- I3 PiN Diode J1 Bridge Rectifier 》 Fast Bridge Rectifiers
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SGSR809-A
SC-59
SGSR809-B
SGSR809-C
SGSR809-D
SGSR809-E
secos gmbh
c945 p 331 transistor npn
SM2150AM
SM1150AM
c945 p 331 transistor
SMBJ11CA
2sd2142
SM4005A
SSG8
pzt649
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MR2835S equivalent
Abstract: A14F diode 1n5404 diode FE16A MUR860 equivalent MUR1620CT MUR420 diode usd745c equivalent MBRD360 PR1502
Text: MBR6045PT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction — Terminals 1 and 3 May Be Connected
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MBR6045PT
VHE205
VHE210
VHE215
VHE220
VHE2401
VHE2402
VHE2403
VHE2404
VHE605
MR2835S equivalent
A14F diode
1n5404 diode
FE16A
MUR860 equivalent
MUR1620CT
MUR420 diode
usd745c equivalent
MBRD360
PR1502
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S3K60
Abstract: Low Forward Voltage Diode
Text: Super Fast Recovery Diode Axial Diode OUTLINE S3K60 Unit : m m Package : AX14 W eight 1.06g Typ 600V 3A 2 ' Feature 26.5 • í iü í E F R D • High Voltage Supper FRD • trr=100ns • trr= 100ns • V f =1.3V • Low V f=1 .3V N B 26.5 -Li. MA «<?
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S3K60
100ns
S3K60
J533-1
Low Forward Voltage Diode
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Untitled
Abstract: No abstract text available
Text: Super Fast Recovery Diode Axial Diode Wtm OUTLINE Package : AX14 S3K60 Unit-mm Weight 1.06g Typ 600V 3A Feature • High Voltage Supper FRD • trr=100ns • trr=100ns • ® V f =1.3V 26.5 26.5 • H lf f iF R D iT > H«- • Low V f=1 ,3V * tS fU B M W
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S3K60
100ns
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S3K60
Abstract: S3L60 WMM marking code
Text: Super Fast Recovery Diode Axial Diode Wtm OUTLINE Package : AX14 S3K60 Unit-mm Weight 1.06g Typ 600V 3A 26.5 26.5 Feature • H lf f iF R D • High Voltage Supper FRD • trr=100ns iT > • trr=100ns • Low V f=1 ,3V • ® V f =1.3V H«- * tS fU B M W
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S3K60
100ns
waveli50Hz
S3K60
S3L60
WMM marking code
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Untitled
Abstract: No abstract text available
Text: SP3T SWITCHES Advanced Conffoi Components H ik . The S3 series of single pole, three throw PIN diode switches span the frequency range of 10MHz to 18GHz and are available with absorptive or reflective inputs. The switches are available in a wide variety of
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10MHz
18GHz
26GHz
/-12V,
/-15V
S3-0303B
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