GaAs 1000 nm Infrared Emitting Diode
Abstract: SD1410 SD1420 SD1440 SE1450
Text: 17 September 1997 SE1450 GaAs Infrared Emitting Diode FEATURES • Compact, metal can coaxial package • 24¡ nominal beam angle • 935 nm wavelength • Wide operating temperature range (-55¡C to +125¡C) • Mechanically and spectrally matched to SD1420
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Original
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SE1450
SD1420
SD1440
SD1410
INFRA-63
SE1450
SE1450-XXXL)
GaAs 1000 nm Infrared Emitting Diode
SD1420
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PDF
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SE1470
Abstract: SD1410 SD1420 SD1440 SE1470-XXX
Text: SE1470 AlGaAs Infrared Emitting Diode FEATURES • Compact metal can coaxial package • 24¡ nominal beam angle • 880 nm wavelength • Higher output power than GaAs at equivalent drive currents • Wide operating temperature range (- 55¡C to +125¡C)
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Original
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SE1470
SD1420
SD1440
SD1410
INFRA-63
SE1470
SE1470-XXXL)
SD1420
SE1470-XXX
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PDF
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GaAs 1000 nm Infrared Diode,
Abstract: SD1410 SD1420 SD1440 SE1450
Text: SE1450 GaAs Infrared Emitting Diode FEATURES • Compact, metal can coaxial package • 24¡ nominal beam angle • 935 nm wavelength • Wide operating temperature range (- 55¡C to +125¡C) • Mechanically and spectrally matched to SD1420 photodiode, SD1440 phototransistor and
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Original
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SE1450
SD1420
SD1440
SD1410
INFRA-63
SE1450
SE1450-XXXL)
GaAs 1000 nm Infrared Diode,
SD1420
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PDF
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SE1470
Abstract: SD1410 SD1420 SD1440
Text: 17 September 1997 SE1470 AlGaAs Infrared Emitting Diode FEATURES • Compact metal can coaxial package • 24¡ nominal beam angle • 880 nm wavelength • Higher output power than GaAs at equivalent drive currents • Wide operating temperature range (-55¡C to +125¡C)
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Original
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SE1470
SD1420
SD1440
SD1410
INFRA-63
SE1470
SE1470-XXXL)
SD1420
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PDF
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SE1470
Abstract: SE1470-002L
Text: SE1470 AIGaAs Infrared Emitting Diode FEATURES • Compact, metal can coaxial package • 24° nominal beam angle • 880 nm wavelength • Higher output power than GaAs at equivalent drive currents • Wide operating temperature range (-55°C to +125C)
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OCR Scan
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SE1470
SD1420
SD1440
SD1410
SE1470
SE1470-XXXL)
SD1440
SE1470-002L
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PDF
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Untitled
Abstract: No abstract text available
Text: SE1450 GaAs Infrared Emitting Diode ELECTRICAL CHARACTERISTIC 25°C unless otherwise noted PARAMETER Total Power Output SE1450-001, SE1450-001 L SE1450-002, SE1450-002 L SE1450-003, SE1450-003 L SE1450-004, SE1450-004 L Forward Voltage . Reverse Breakdown Voltage
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OCR Scan
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SE1450
SE1450-001,
SE1450-001
SE1450-002,
SE1450-002
SE1450-003,
SE1450-003
SE1450-004,
SE1450-004
QQ25MS1
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PDF
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SE1470-002L
Abstract: SE1470-003
Text: SE1470 AIGaAs Infrared Emitting Diode I FEATURES • Compact metal can coaxial package • 24° nominal beam angle • 880 nm wavelength • Higher output power than GaAs at equivalent drive currents . Wide operating temperature range (-55°C to +125°C)
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OCR Scan
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SE1470
SD1420
SD1440
SD1410
SE1470
SE1470-XXXL)
SD1440
SE1470-002L
SE1470-003
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PDF
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GaAs 1000 nm Infrared Diode,
Abstract: SE1450-002L
Text: SE1450 GaAs Infrared Emitting Diode FEATURES • Compact, metal can coaxial package • 24° nominal beam angle • 935 nm wavelength • Wide operating temperature range (-55°C to +125°C) • Mechanically and spectrally matched to SD1420 photodiode, SD1440 phototransistor and
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OCR Scan
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SE1450
SD1420
SD1440
SD1410
SE1450
SE1450-XXXL)
SE1450-XXX
SD1440
GaAs 1000 nm Infrared Diode,
SE1450-002L
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PDF
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diode t25 4 j5
Abstract: No abstract text available
Text: SE1470 AIGaAs Infrared Emitting Diode FEATURES • Compact metal can coaxial package • 24° nominal beam angle » 880 nm wavelength . Higher output power than GaAs at equivalent drive currents • Wide operating temperature range (-55°C to +125°C) . Mechanically and spectrally matched to SD1420
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OCR Scan
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SE1470
SD1420
SD1440
SD1410
INFRA-63
SE1470
SE1470-XXXL)
diode t25 4 j5
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PDF
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GaAs 1000 nm Infrared Diode,
Abstract: SE1450-002L se1450-003l
Text: SE1450 GaAs Infrared Emitting Diode FEA TU R ES • Compact, metal can coaxial package • 24° nominal beam angle • 935 nm wavelength • Wide operating temperature range (-55°C to +125°C) • Mechanically and spectrally matched to SD 1420 photodiode, SD 1440 phototransistor and SD1410
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OCR Scan
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SE1450
SD1410
SE1450
SE1450-XXXL)
SE1450-XXX
SD1440
GaAs 1000 nm Infrared Diode,
SE1450-002L
se1450-003l
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PDF
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HOA2762
Abstract: HOA2762-001
Text: HOA2762 Transmissive Sensor DESCRIPTION The HOA2762 series consists of an infrared emitting diode facing an NPN silicon phototransistor HOA2762-001, -002 or photodarlington (HOA2762-003) encased in a black thermoplastic housing. Detector switching takes place whenever an
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OCR Scan
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HOA2762
HOA2762
HOA2762-001,
HOA2762-003)
SE1450,
SD1440,
SD14lsed
HOA2762-001
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PDF
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H0A1876
Abstract: No abstract text available
Text: H0A1876 Transmissive Sensor DESCRIPTION The HOA1876 series consists of an infrared emitting diode facing an NPN silicon phototransistor HOA1876-001, -002 or photodarlington (HOA1876-003) encased in a white thermoplastic housing. Detector switching takes place whenever an
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OCR Scan
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H0A1876
HOA1876
HOA1876-001,
HOA1876-003)
SE1450,
SD1440,
SD1410.
H0A1876
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PDF
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0.01 K100
Abstract: HOA-1875 HOA1875 PIC metal detector sensor IF HOA1875-001
Text: HOA1875 Transmissive Sensor DESCRIPTION The HOA1875 series consists of an infrared emitting diode facing an NPN silicon phototransistor HOA1875-001, -002 or photodarlington (HOA1875-003) encased in a black thermoplastic housing. Detector switching takes place whenever an
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OCR Scan
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A1875
HOA1875
HOA1875-001,
HOA1875-003)
SE1450,
SD1440,
SD1410.
G022bÃ
0.01 K100
HOA-1875
PIC metal detector
sensor IF
HOA1875-001
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PDF
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H0A1874
Abstract: No abstract text available
Text: H0A1874 Transmissive Sensor DESCRIPTION The HOA1874 series consists of an infrared emitting diode facing an NPN silicon phototransistor HOA1874-001, -002, -011, -012 or photodarlington (HOA1874-003, -013) encased in a black thermoplastic housing. Detector switching takes place
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OCR Scan
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H0A1874
HOA1874
HOA1874-001,
HOA1874-003,
HOA1874-011
SE1450,
SD1440,
SD1410,
SEP8506,
H0A1874
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PDF
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HOA2498-001
Abstract: No abstract text available
Text: HOA2498 Reflective Sensor DESCRIPTION The HOA2498 series consists of an infrared emitting diode and an NPN silicon phototransistor HOA2498-001, -002 or photodarlington (HOA2498-003), encased side-by-side on converging optical axes in a black thermoplastic housing. The
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OCR Scan
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HOA2498
HOA2498-001,
HOA2498-003)
SE1450,
SD1440,
SD1410.
455ifl3Ã
HOA2498-001
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PDF
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H0A1404
Abstract: HOA1404
Text: H0A1404 Reflective Sensor DESCRIPTION The HOA1404 series consists of an infrared emitting diode and an NPN silicon phototransistor HOA1404-001 ,-002 or photodarlington (HOA1404-003), encased side-by-side on converging optical axes, in a black thermoplastic housing. The
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OCR Scan
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H0A1404
HOA1404
HOA1404-001
HOA1404-003)
SE1450,
SD1440,
SD1410.
SS1A30
22b4b
H0A1404
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PDF
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HOA14
Abstract: No abstract text available
Text: HOA1404 Reflective Sensor DESCRIPTION The HOA14C4 series consists of an infrared emitting diode and an NPN silicon phototransistor HOA1404-001 ,-002 or photodarlington (HOA1404-003), encased side-by-side on converging optical axes, in a black thermoplastic housing. The
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OCR Scan
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HOA1404
HOA1404-001
HOA1404-003)
SE1450,
SD1440,
SD1410.
HOA14
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PDF
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HOA2498
Abstract: No abstract text available
Text: HOA2498 Reflective Sensor , FEATURES • Choiceol phoblransislor or pholodarlingtn output ' / / ' Wide opera ling temperature range - 55'C lo-MOO'C DESCRIPTION The HOA2498 secies oons&ls ol an inFrared emitting diode -and an NPN silicon phototransislor (H0A24B&- 001, - 002) or photodarington
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OCR Scan
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HOA2498
44-I--I-WÃ
00SSSBSÃ
HOA2498
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PDF
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Untitled
Abstract: No abstract text available
Text: HOA2498 Reflective Sensor FEATURES • Choice of phototransistor or photodarlington output • Focused for maximum response • Wide operating temperature range -55°C to+100°C DESCRIPTION The HOA2490 series consists of an infrared emitting diode and an NPN silicon phototransistor
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OCR Scan
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HOA2498
HOA2490
HOA2498-001,
HOA2498-003)
HOA2498
SE1450,
SD1440,
SD1410.
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PDF
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all Metal Detector
Abstract: HQA2862-003 ic for metal detector hoa2862
Text: HOA2862 Transmissive Sensor D ESCRIPTIO N The HOA2862 series consists of an infrared emitting diode facing an N PN silicon phototransistor HOA2862-001, -002 or photodarlington (HOA2862-003) encased in a black thermoplastic housing. Detector switching takes place whenever an
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OCR Scan
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HOA2862
HOA2862
HOA2862-001,
HOA2862-003)
SE1450,
SD1440,
SD1410.
all Metal Detector
HQA2862-003
ic for metal detector
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PDF
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sd144
Abstract: reflective sensor
Text: HOA1404 Reflective Sensor FEATURES • Choice of phototransistor or photodarlington output • Focused for maximum response • Wide operating temperature range -55°C to +100°C DESCRIPTION The HOA1404 series consists of an infrared emitting diode and an NPN silicon phototransistor
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OCR Scan
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HOA1404
HOA1404
HOA1404-001,
HOA1404-003)
SE1450,
SD1440,
SD1410.
sd144
reflective sensor
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PDF
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Untitled
Abstract: No abstract text available
Text: HOA2498 Reflective Sensor FEATURES • Choice of phototransistor or photodarlington output • Focused for maximum response • Wide operating temperature range {-55°C to +100°C DESCRIPTION The HOA2498 series consists of an infrared emitting diode and an NPN silicon phototransistor
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OCR Scan
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HOA2498
HOA2498
HOA2498-OQ1,
HOA2498-003)
SE1450,
SD1440,
SD1410.
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PDF
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HOA2762
Abstract: HQA2762 honeywell sensor
Text: HOA2762 Not recommended for new designs Transmissive Sensor DESCRIPTION The HOA2762 series consists of an infrared emitting diode facing an NPN silicon phototransistor HCJA2762-001, -002 or photodariington (HOA2762-003) encased in a black thermoplastic housing. Detector switching takes place whenever an
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OCR Scan
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HOA2762
HOA2762
HCJA2762-001,
HOA2762-003)
HQA2762
honeywell sensor
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PDF
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OA2498
Abstract: No abstract text available
Text: HOA2498 Reflective Sensor FEATURES • Choice of phototransistor or photodarlington output • Focused for maximum response • Wide operating temperature range -55°C to +100°C DESCRIPTION The HOA2498 series consists of an infrared emitting diode and an N PN silicon phototransistor
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OCR Scan
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HOA2498
HOA2498
HOA2498-001,
HOA2498-003)
SE1450,
SD1440,
SD1410.
OA2498
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PDF
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