diode MARKING CODE sg
Abstract: marking code SG diode sg 03 sg diode code marking MARKING CODE sg 06 SG DIODE RB520S-30 MARKING SG diode marking sg code sg
Text: RB520S-30 SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE Low Current Rectification and High Speed Switching Applications Features PINNING • Extremely small surface mounting type. DESCRIPTION PIN • High reliability. 1 Cathode 2 Anode 2 1 SG Top View Marking Code: "SG"
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RB520S-30
OD-523
OD-523
diode MARKING CODE sg
marking code SG
diode sg 03
sg diode code marking
MARKING CODE sg 06
SG DIODE
RB520S-30
MARKING SG
diode marking sg
code sg
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Untitled
Abstract: No abstract text available
Text: HE7601SG GaAIAs IRED Description T he H E 7 6 0 1 SG is a 770 nm band G aA lA s infrared light em itting diode with a double heterojunction structure. It is suitable as a light source for optical control devices and sensors. features Package Type • HE7601SG : SG
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HE7601SG
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S 205T
Abstract: No abstract text available
Text: SEC LIGHT EMITTING DIODES ELECTRON DEVICE SG205D,SG205T GaP LIGHT EM ITTIN G DIODE GREEN -N EPO C SERIES— DESCRIPTION The SG 205D, SG 205T are Gap Gallium Phosphide Light Emitting Diodes which are mounted on the lead frames and molded in green diffused, green clear plastic respectively. They are ideally suited for front panel indicator applications.
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SG205D
SG205T
SG2060:
SG205D/Lum
S 205T
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marking sg
Abstract: diode SOD-323 SD107WS SG DIODE MARKING
Text: SOD-323 Plastic-Encapsulate Diode SD107WS SCHOTTKY DIODE SOD-323 Features 1.00 1.70 Marking: SG 2.65 0.30 • · Low Forward Voltage Drop Guard Ring Die Construction for Transient Protection Ideal for low logic level applications Low Capacitance 1.30 · ·
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OD-323
SD107WS
OD-323
3000ms.
019REF
475REF
marking sg
diode SOD-323
SD107WS
SG DIODE MARKING
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BAR19
Abstract: No abstract text available
Text: C T SG S-TH O M SO N ^ 7 # . HDlgœilLIgTOOIfSlDgi BAR 19 SMALL SIGNAL SCHOTTKY DIODE DESCRIPTION Metal to silicon junction diode primarly intended for UHF mixers and ultrafast switching applications. ABSOLUTE RATINGS limiting values Repetitive Peak Reverse Voltage
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diode SD107WS SCHOTTKY DIODE SOD-323 Features 1.00 1.70 Marking: SG 2.65 0.30 • · Low Forward Voltage Drop Guard Ring Die Construction for Transient Protection Ideal for low logic level applications
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OD-323
SD107WS
OD-323
3000ms.
019REF
475REF
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diode SD107WS SCHOTTKY DIODE SOD-323 Features ０．８５ 1.70 Marking: SG 2.65 0.30 • · Low Forward Voltage Drop Guard Ring Die Construction for Transient Protection Ideal for low logic level applications
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OD-323
SD107WS
OD-323
100mA
3000ms.
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Untitled
Abstract: No abstract text available
Text: /= T SG S-TH O M SO N BAT 41 SMALL SIGNAL SCHO I IKY DIODE DESCRIPTION General purpose metal to silicon diode featuring very low turn-on voltage and fast switching. This device has integrated protection against ex cessive voltage such as electrostatic discharges.
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diodes SOD-323 SD107WS FAST SWITCHING DIODES + FEATURES z Low turn-on voltage z Fast switching - MARKING: SG Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃
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OD-323
OD-323
SD107WS
100mA
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Untitled
Abstract: No abstract text available
Text: SG S-TH O M SO N RfflDeiE!<s [l[L[ie,ü’[Ki@RDD S$ BDX53F BDX54F COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS . SGS-THOMSON PREFERRED SALESTYPES . COMPLEMENTARY PNP - NPN DEVICES . MONOLITHIC DARLINGTON CONFIGURATION . INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE
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BDX53F
BDX54F
BDX53F
T0-220
BDX54F.
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ESM3030DV
Abstract: No abstract text available
Text: SG S-TH O M SO N RülDigœilLIg'iriûiDeS ESM3030DV NPN DARLINGTON POWER MODULE . HIGH CURRENT POWER BIPOLAR MODULE . VERY LOW R,h JUNCTION CASE . SPECIFIED ACCIDENTAL OVERLOAD AREAS . ULTRAFAST FREEWHEELING DIODE . ISOLATED CASE 2500V RMS . EASY TO MOUNT
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ESM3030DV
ESM3030DV
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ESM4045DV
Abstract: No abstract text available
Text: SG S-TH O M SO N ESM4045DV NPN DARLINGTON POWER MODULE . . . . . . . HIGH CURRENT POWER BIPOLAR MODULE VERY LOW R,h JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS ULTRAFAST FREEWHEELING DIODE ISOLATED CASE 2500V RMS EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE
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ESM4045DV
ESM4045DV
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SMD MARKING CODE sg
Abstract: diode MARKING CODE sg smd diode marking sG MARKING CODE sg 06 diode sg 01 diode smd marking code SG SG DIODE MARKING diode smd code SG sg smd code smd "code rc" transistor
Text: SB520WT SCHOTTKY BARRIER DIODE Features PINNING • Ultra small SMD package DESCRIPTION PIN • Very low forward voltage 1 Cathode 2 Anode Applications 2 1 • Ultra high speed switching SG RC • Voltage clamping • Low current rectification Top View Top
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SB520WT
OD-523
OD-523
SMD MARKING CODE sg
diode MARKING CODE sg
smd diode marking sG
MARKING CODE sg 06
diode sg 01
diode smd marking code SG
SG DIODE MARKING
diode smd code SG
sg smd code
smd "code rc" transistor
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Untitled
Abstract: No abstract text available
Text: £ ÿ j SG S-TH O M SO N D»ilLiœ s R(|D(êS BYV 10-60 SMALL SIGNAL SCHOTTKY DIODE DESCRIPTION Metal to silicon rectifier diode in glass case featu ring very low forward voltage drop and fast recovery time, intended for low voltage switching mode power supply, polarity protection and high fre
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300ns
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ByV schottky
Abstract: No abstract text available
Text: C T SG S-TH O M SO N ^T/.llD lgœ ilLIgTrœ M gi BYV10-20A SMALL SIGNAL SCHOTTKY DIODE DESCRIPTION Metal to silicon rectifier diode in glass case featu ring very low forward voltage drop and fast recovery time, intended for low voltage switching mode power supply, polarity protection and high fre
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BYV10-20A
ByV schottky
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220v 25a diode bridge
Abstract: No abstract text available
Text: rZ J SG S-THOM SO N TSIxxxB5 TELEPHONE SET INTERFACE FEATURES • SINGLE DEVICE PROVIDING : DIODE BRIDGE BIDIRECTIONAL PROTECTION ■ CROWBAR PROTECTION ■ PEAK PULSE CURRENT: Ipp = 30A, 10/1000 jis . VOLTAGE RANGE FROM 120V to 270V ■ Maximum current : lo = 0.5
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Untitled
Abstract: No abstract text available
Text: HE7601SG Description GaAIAs IRED The HE7601SG is a 770 nm band GaAlAs infrared light emitting diode with a double heterojunction struc ture. It is suitable as a light source for optical control devices and sensors. features Package Type • HE7601SG: SG
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HE7601SG
HE7601SG
HE7601SG:
00144Gb
D014407
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Schaffner IU 1237
Abstract: Schaffner 1237 NSG506C 7R2R23
Text: C T SG S-THO M SO N LDP24M TRANSIL LOAD DUMP PROTECTION PRELIMINARY DATASHEET • TRANSIENT VOLTAGE SUPPRESSOR DIODE ESPECIALLY DESIGNED FOR LOAD DUMP EFFECT PROTECTION . HIGH SURGE CURRENT CAPABILITY: 30 A / 40 ms EXPONENTIAL WAVE a COMPLIANT WITH MAIN STANDARDS
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LDP24M
-SAEJ1113A.
S0-10TM
Schaffner IU 1237
Schaffner 1237
NSG506C
7R2R23
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BU810
Abstract: No abstract text available
Text: S G S -T H O M S O N iM m @ ignnCTisì«ii Sgì BU 810 MEDIUM VOLTAGE NPN FAST-SWITCHING DARLINGTON TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPE . NPN DARLINGTON . LOW BASE-DRIVE REQUIREMENTS . FAST SWITCHING SPEED . INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE
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BU810
T0-220
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SGS125
Abstract: s125 transistor
Text: r Z J SGS-TUOMSON Hö i s [liLi©?^ iö©i SG S125 SILICON PNP POWER DARLINGTON TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPE . PNP DARLINGTON . INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATION . GENERAL PURPOSE SWITCHING DESCRIPTION The SGS125 is a silicon epitaxial-base PNP
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SGS125
150KS2
s125 transistor
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SG30TC15M
Abstract: No abstract text available
Text: Schottky Barrier Diode Twin Diode mtm OUTLINE SG 30T C 1 5 M 15 0 V 3 0 A Feature • Tj= 175°C • 7 ; iÆ • Tj=175°C • High lo Rating • Full Molded -,/b F • <£Ir=40|jA • Low Ir=40|jA • U le < l i • igüIÎŒ 2kV{*IŒ • Resistance for thermal run-away
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SG30TC15M
FTO-220G
waveti50Hz-t
CJ533-1
SG30TC15M
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Untitled
Abstract: No abstract text available
Text: Schottky Barrier Diode Twin Diode mtmm SG 30TC 12M Unit : mm Package : FTO-220G o -y H d ^ J 120V 30A 4.5 Feature • Tj=175°C • • • • • 7 Jb = E -Jb K • o u t lin e Ir=40|jA Tj=175°C Full Molded Low Ir=40|jA Resistance for thermal run-away
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FTO-220G
J533-1)
SG30TC12M
50IIz
J533-1
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Untitled
Abstract: No abstract text available
Text: Schottky Barrier Diode Twin Diode OUTLINE SG 30TC 15M 150V 30A Feature • Tj=150°C • T j= i5 r c • High lo Rating • 7 / iæ - ju ^ • lR = 4 0 p A • Full Molded • Low Ir=40(jA • *& « £ « & : u c < u • Resistance fo r thermal run-away
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Untitled
Abstract: No abstract text available
Text: '> 3 7 t Schottky Barrier Diode - K Axial Diode OUTLINE DIMENSIONS D1NS6 Case : 0.6 ^ I 2.6 =01 60V 1A i & i a © • T i 15013 o SIE #P h rsm ? J M- D (2 Cathode : Anode ^ Cathode band m j* *}sg]@sr*H2 M arking •S R S S S6 _a 24 -v h ,iii (M) Date code
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0D0316T
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