1N4475
Abstract: 1N4465 1N4469 1N4474 1N4464 Zener diode zener diode 1N4464 1N4478 1N4477 1N4471 1N4479
Text: SENSITRON SEMICONDUCTOR 1N4464 thru 1N4494 1N4464US thru 1N4494US TECHNICAL DATA DATA SHEET 5080, Rev SJ SX SV Zener 1.5W DIODE • Ultra-low reverse leakage current • Zener voltage available from 36V to 160V • Sharp Zener knee • Metallurgically bonded
|
Original
|
1N4464
1N4494
1N4464US
1N4494US
1N4475
1N4465
1N4469
1N4474
1N4464 Zener diode
zener diode 1N4464
1N4478
1N4477
1N4471
1N4479
|
PDF
|
d 5072 transistor
Abstract: d 5072 1N6171AUS
Text: SENSITRON SEMICONDUCTOR 1N6138A/US thru 1N6173A/US TECHNICAL DATA DATA SHEET 5072, REV. – SJ SX SV Transient Voltage Suppressor Diode, 1500W • Hermetic, non-cavity glass package • Metallurgically bonded o o • Operating and Storage Temperature: -55 C to +175 C
|
Original
|
1N6138A/US
1N6173A/US
1N6138A/US
1N6139A/US
1N6140A/US
1N6141A/US
1N6142A/US
1N6143A/US
1N6144A/US
1N6145A/US
d 5072 transistor
d 5072
1N6171AUS
|
PDF
|
C 5074 transistor
Abstract: No abstract text available
Text: SENSITRON SEMICONDUCTOR 1N6102A/US thru 1N6137A/US TECHNICAL DATA DATA SHEET 5074, REV. – SJ SX SV Transient Voltage Suppressor Diode, 500W • Hermetic, non-cavity glass package • Metallurgically bonded o o • Operating and Storage Temperature: -55 C to +175 C
|
Original
|
1N6102A/US
1N6137A/US
1N6102A/US
1N6103A/US
1N6104A/US
1N6105A/US
1N6106A/US
1N6107A/US
1N6108A/US
1N6109A/US
C 5074 transistor
|
PDF
|
1N4465
Abstract: 1N4475 1N4474 1N4464 1N4464US 1N4494 1N4494US SN63 zener diode 1N4464 1N4477
Text: SENSITRON SEMICONDUCTOR 1N4464 thru 1N4494 1N4464US thru 1N4494US TECHNICAL DATA DATA SHEET 5080, Rev A SJ/ SX /SV SS Zener 1.5W DIODE • • • • • • Ultra-low reverse leakage current Zener voltage available from 9.1V to 160V Sharp Zener knee Metallurgically bonded
|
Original
|
1N4464
1N4494
1N4464US
1N4494US
1N4464/US
1N4465/US
1N4466/US
1N4467/US
1N4468/US
1N4469/US
1N4465
1N4475
1N4474
1N4494
1N4494US
SN63
zener diode 1N4464
1N4477
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 1N6108A thru 1N6136A Standard 500W Bi-directional TVS SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 5074, REV. C AV AI L AB L E AS 1 N , J AN , J AN T X , J ANT XV JANS JAN EQUIVALENT * SJ*, SX*, SV*, SS* Bi-directional Transient Voltage Suppressor Diode, 500W
|
Original
|
1N6108A
1N6136A
MIL-PRF-19500/516
1N6108A/US
1N6109A/UStasheet
|
PDF
|
1n4109-1
Abstract: zener diode 10 sv
Text: 1N4100-1/UR-1 to 1N4135-1/UR-1 SENSITRON SEMICONDUCTOR SJ SV SX SS TECHNICAL DATA DATASHEET 5095, Rev A.1 Zener 1.5W DIODE • Zener voltage available from 12V to 100V • Sharp Zener knee • Metallurgically bonded Type Number 1N4100-1/UR ‐1
|
Original
|
1N4100-1/UR-1
1N4135-1/UR-1
1N41001/UR
1N41011/UR
1N41021/UR
1N41031/UR
1N41041/UR
1N41051/UR
1N41061/UR
1N41071/UR
1n4109-1
zener diode 10 sv
|
PDF
|
1n4109-1
Abstract: No abstract text available
Text: 1N4106-1/UR-1 to 1N4135-1/UR-1 SENSITRON SEMICONDUCTOR SJ SV SX TECHNICAL DATA DATASHEET 5095, Rev A Zener 1.5W DIODE • Zener voltage available from 12V to 100V • Sharp Zener knee • Metallurgically bonded Type Number 1N4106-1/UR -1 1N4107-1/UR -1 1N4108-1/UR -1
|
Original
|
1N4106-1/UR-1
1N4135-1/UR-1
1N4106-1/UR
1N4107-1/UR
1N4108-1/UR
1N4109-1/UR
1N4110-1/UR
1N4111-1/UR
1N4112-1/UR
1N4113-1/UR
1n4109-1
|
PDF
|
TRANSISTOR J 5804 NPN
Abstract: TRANSISTOR J 5804 TRANSISTOR J 5803 j 5804 transistor 1N6621
Text: PART NUMBER INDEX ni CR O S E M I CO RP / UIATERTOUN PART NU M BER I N 5614, 1N5615, 1N5616, 1N5617, 1N5618, 1N5619, 1N5620, I N 5622, J, JTX, J, JTX, J, JTX, J, JTX, J, JTX, J, JTX, J, JTX, J, JTX, JTXV JTXV JTXV JTXV JTXV JTXV JTXV JTXV 1N5767 1N5802 1N5802, J, JTX, JTXV
|
OCR Scan
|
1N5615,
1N5616,
1N5617,
1N5618,
1N5619,
1N5620,
1N5767
1N5802
1N5802,
1N5804,
TRANSISTOR J 5804 NPN
TRANSISTOR J 5804
TRANSISTOR J 5803
j 5804 transistor
1N6621
|
PDF
|
Diode SJ 56
Abstract: diode sj pj+939+diode
Text: SK50GD12T4T =' Q BR SJA -%2&'' ,.8& */'& '5& /E/&1 Absolute Maximum Ratings Symbol Conditions IGBT PJ:9 =T Q BR SJ <J =T Q @WR SJ <JY; SEMITOP 4 IGBT Module SK50GD12T4T .5'( @BVV P WR K =' Q WV SJ XV K @RV K Z BV P =T Q @RV SJ @V _' =' Q BR SJ XV K =' Q WV SJ
|
Original
|
SK50GD12T4T
Diode SJ 56
diode sj
pj+939+diode
|
PDF
|
pj 72 diode
Abstract: Diode SJ 12 pj 86 diode Diode SJ
Text: SK75GD12T4T =' Q BR SJA -%2&'' ,.8& */'& '5& /E/&1 Absolute Maximum Ratings Symbol Conditions IGBT PJ:9 =T Q BR SJ <J =T Q @WR SJ <JY; SEMITOP 4 IGBT Module SK75GD12T4T .5'( @BVV P @VB K =' Q WV SJ X@ K BBR K Z BV P =T Q @RV SJ @V ^' =' Q BR SJ XC K =' Q WV SJ
|
Original
|
SK75GD12T4T
pj 72 diode
Diode SJ 12
pj 86 diode
Diode SJ
|
PDF
|
pj 56 diode
Abstract: semikron 3Y diode PJ diode ph9a
Text: SK100GD12T4T =' Q BR SJA -%2&'' ,.8& */'& '5& /E/&1 Absolute Maximum Ratings Symbol Conditions IGBT PJ:9 =T Q BR SJ <J =T Q @WR SJ <JY; SEMITOP 4 IGBT Module SK100GD12T4T .5'( @BVV P @BX K =' Q WV SJ @VV K CVV K Z BV P =T Q @RV SJ @V _' =' Q BR SJ @VB K =' Q WV SJ
|
Original
|
SK100GD12T4T
pj 56 diode
semikron 3Y diode
PJ diode
ph9a
|
PDF
|
IPA50R500CE
Abstract: DIODE V10-20 mosfet equivalent IPA50R280CE LLC resonant smps resonant llc full bridge 400W pwm smps schematic SWITCHING bjt 500v IPA50R280C
Text: Application Note AN 2012-04 V1.0 April 2012 500V CoolMOSTM CE 500V Superjunction MOSFET for Consumer and Lighting Applications IFAT PMM APS SE SL René Mente Francesco Di Domenico 500V CoolMOSTM CE Application Note AN 2012-04 V1.0 April 2012 Edition 2011-02-02
|
Original
|
ED-29,
IPA50R500CE
DIODE V10-20
mosfet equivalent
IPA50R280CE
LLC resonant
smps resonant llc full bridge
400W pwm smps schematic
SWITCHING bjt 500v
IPA50R280C
|
PDF
|
2SK3924-01L
Abstract: Sj 33 diode
Text: 2SK3924-01L,S,SJ N-CHANNEL SILICON POWER MOSFET Outline Drawings mm 200406 FUJI POWER MOSFET Super FAP-G Series Features High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power See to P4 Applications Switching regulators
|
Original
|
2SK3924-01L
Sj 33 diode
|
PDF
|
diode sj
Abstract: n-channel 250V power mosfet 2SK3924-01L TF-2502
Text: 2SK3924-01L,S,SJ N-CHANNEL SILICON POWER MOSFET Outline Drawings mm 200406 FUJI POWER MOSFET Super FAP-G Series Features High speed switching No secondary breakdown Avalanche-proof Low on-resistance Low driving power See to P4 Applications Switching regulators
|
Original
|
2SK3924-01L
diode sj
n-channel 250V power mosfet
TF-2502
|
PDF
|
|
|
2SK3927-01L
Abstract: 1NCF
Text: 2SK3927-01L,S,SJ N-CHANNEL SILICON POWER MOSFET Outline Drawings mm 200406 FUJI POWER MOSFET Super FAP-G Series Features High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power See to P4 Applications Switching regulators
|
Original
|
2SK3927-01L
1NCF
|
PDF
|
Diode SJ 44
Abstract: No abstract text available
Text: SKNa 20 Stud Diode Avalanche Diode SKNa 20 Features # $%&'& *+ ,-.+ /+%+/0+ # # # )*&/&),+/10,1) 2. ,3 4566 7+/8+,1) 8+,&' )&0+ 91,* :'&00 1(02'&,3/ $(3;+ 01;+ ,*/+&;+; 0,2; <=> ? @33'1(: %1& 8+,&' .'&,+0 3/ *+&, 01(A0 =BCD $(3;+ ,3 0,2; MGNOK81( <LO?= Q R6 $
|
Original
|
MGNOK81(
S1828
64X4D
Diode SJ 44
|
PDF
|
IC 4558 surround sound circuit
Abstract: ILX554 ICX285AL LCX029amt sony led tv electronic diagram LCX017CLT surround circuit using ic 4558 pin diagram composite to GVIF ILX551A GVIF
Text: FIRST HALF 2 0 0 1 semiconductor product guide Table of Contents CAVD Multimedia Products . . . . . . . . . . . . . . . . . . . . . . . . 2 CCDs Area Sensor — Color . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Area Sensor— Black & White. . . . . . . . . . . . . . . . . . . . . 3
|
Original
|
SBD-PG010101
IC 4558 surround sound circuit
ILX554
ICX285AL
LCX029amt
sony led tv electronic diagram
LCX017CLT
surround circuit using ic 4558 pin diagram
composite to GVIF
ILX551A
GVIF
|
PDF
|
RF2 2A 250V
Abstract: No abstract text available
Text: RF2 2-pole Force Guided Relay / SJ Series Socket For simple and easy safety measures - reduce costs and installation space. • 2-pole force guided relay to reduce cost and installation space. • Force guided contact mechanism EN50205 Type A TÜV approved .
|
Original
|
EN50205
UL60947-4-1A
E55996
LR35144
EN50/
EP1471-0
RF2 2A 250V
|
PDF
|
diode 1n4637
Abstract: in4632 zener diode in4560 1N41 IN4620 IN4550 IN4624 1n41113 1N4611A IN4619
Text: H H M M M H Z Z Z z z z A * A A A A 2 2 2 2 2 2 M H O M M M z z z A A A 0t W W CO SO 00 sj M H M z z z A A A 0> Ot Ot WWW 9 m A M M M z z z A A A 9 0 lO > CO CO Co W N h MMH* z z z A A A Oi 0 ) 01 co ro ro O lO 00 M z A 01 N) sj M z A 01 N) 01 M M M Z Z Z
|
OCR Scan
|
1N4549
1N4550
1N4551
1N4552
1N4553
1N4554
1N4555
1N4556
1N4557
1N4558
diode 1n4637
in4632
zener diode in4560
1N41
IN4620
IN4550
IN4624
1n41113
1N4611A
IN4619
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 2SK3924-01L,S,SJ N-CHANNEL SILICON POWER MOSFET Outline Drawings mm 200406 FUJI POWER MOSFET Super FAP-G Series Features High speed switching No secondary breakdown Avalanche-proof Low on-resistance Low driving power See to P4 Applications Switching regulators
|
Original
|
2SK3924-01L
|
PDF
|
Diode SJ 56
Abstract: No abstract text available
Text: 2SK3927-01L,S,SJ N-CHANNEL SILICON POWER MOSFET Outline Drawings mm 200406 FUJI POWER MOSFET Super FAP-G Series Features High speed switching No secondary breakdown Avalanche-proof Low on-resistance Low driving power See to P4 Applications Switching regulators
|
Original
|
2SK3927-01L
Diode SJ 56
|
PDF
|
led 5050 rgb datasheet
Abstract: 5050 rgb led GVIF cable ILX511 sony exview camera IC 4558 surround sound circuit CCD LINEAR SENSOR 512 IC PROCESSOR VCT1 ICX205 ccd sony ilx511
Text: F I R S T Q U A R T E R 2 0 0 0 semiconductor product guide Table of Contents CCDs Area Sensor — Color . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Area Sensor— Black & White. . . . . . . . . . . . . . . . . . . . . 3 Area Sensor — Progressive Scan . . . . . . . . . . . . . . . . . . 4
|
Original
|
|
PDF
|
diode sj
Abstract: 2sk3684 2SK3684-01L
Text: 2SK3684-01L,S,SJ FUJI POWER MOSFET 200309 N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power Applications P4 Switching regulators DC-DC converters
|
Original
|
2SK3684-01L
diode sj
2sk3684
|
PDF
|
Sj 88 diode
Abstract: 2SK3612 Diode SJ 14
Text: 2SK3612-01L,S,SJ 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings mm Features TO-220AB High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators
|
Original
|
2SK3612-01L
O-220AB
Sj 88 diode
2SK3612
Diode SJ 14
|
PDF
|
