Sj Schottky Rectifier
Abstract: No abstract text available
Text: SENSITRON 1N6660, 1N6660R SJ, SX, SV SEMICONDUCTOR TECHNICAL DATA DATASHEET 4300, Rev- HERMETIC POWER SCHOTTKY RECTIFIER Applications: • Switching Power Supply • Converters • Free-Wheeling Diodes • Polarity Protection Diode Features: • • • •
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1N6660,
1N6660R
SJ6660,
SX6660
SV6660
Sj Schottky Rectifier
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C 5074 transistor
Abstract: No abstract text available
Text: SENSITRON SEMICONDUCTOR 1N6102A/US thru 1N6137A/US TECHNICAL DATA DATA SHEET 5074, REV. – SJ SX SV Transient Voltage Suppressor Diode, 500W • Hermetic, non-cavity glass package • Metallurgically bonded o o • Operating and Storage Temperature: -55 C to +175 C
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1N6102A/US
1N6137A/US
1N6102A/US
1N6103A/US
1N6104A/US
1N6105A/US
1N6106A/US
1N6107A/US
1N6108A/US
1N6109A/US
C 5074 transistor
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Untitled
Abstract: No abstract text available
Text: 1N6108A thru 1N6136A Standard 500W Bi-directional TVS SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 5074, REV. C AV AI L AB L E AS 1 N , J AN , J AN T X , J ANT XV JANS JAN EQUIVALENT * SJ*, SX*, SV*, SS* Bi-directional Transient Voltage Suppressor Diode, 500W
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1N6108A
1N6136A
MIL-PRF-19500/516
1N6108A/US
1N6109A/UStasheet
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1n4109-1
Abstract: zener diode 10 sv
Text: 1N4100-1/UR-1 to 1N4135-1/UR-1 SENSITRON SEMICONDUCTOR SJ SV SX SS TECHNICAL DATA DATASHEET 5095, Rev A.1 Zener 1.5W DIODE • Zener voltage available from 12V to 100V • Sharp Zener knee • Metallurgically bonded Type Number 1N4100-1/UR ‐1
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1N4100-1/UR-1
1N4135-1/UR-1
1N41001/UR
1N41011/UR
1N41021/UR
1N41031/UR
1N41041/UR
1N41051/UR
1N41061/UR
1N41071/UR
1n4109-1
zener diode 10 sv
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1n4109-1
Abstract: No abstract text available
Text: 1N4106-1/UR-1 to 1N4135-1/UR-1 SENSITRON SEMICONDUCTOR SJ SV SX TECHNICAL DATA DATASHEET 5095, Rev A Zener 1.5W DIODE • Zener voltage available from 12V to 100V • Sharp Zener knee • Metallurgically bonded Type Number 1N4106-1/UR -1 1N4107-1/UR -1 1N4108-1/UR -1
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1N4106-1/UR-1
1N4135-1/UR-1
1N4106-1/UR
1N4107-1/UR
1N4108-1/UR
1N4109-1/UR
1N4110-1/UR
1N4111-1/UR
1N4112-1/UR
1N4113-1/UR
1n4109-1
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IEC 60947-5-6
Abstract: 60947-5-6 KFD2-SRA-Ex4 NCN3-F24R-N4 NCB2-12GM35-N0 NCB15 U1 NO NCB15 NCN3-F36-N4 namur standard positioner valve positioners
Text: Transformer Isolated Barriers KFD2-SRA-Ex* Output: Relay Input EEx ia IIC Input II + - Control circuit EEx ia IIC 24 V DC nominal supply voltage Reversible mode of operation Lead monitoring short circuit LK and interruption LB with LED indicator (red flashing), switching output and
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15-30GKK-N
15-30GM-N
20-40-N
25-50-N
NCN15-M1K-N0
NCB15
NCN20
NCN30
NCN40
NCN3-F24L-N4
IEC 60947-5-6
60947-5-6
KFD2-SRA-Ex4
NCN3-F24R-N4
NCB2-12GM35-N0
NCB15 U1 NO
NCN3-F36-N4
namur standard positioner
valve positioners
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Untitled
Abstract: No abstract text available
Text: RF2140 9 '&6 32: 5 $03/, ,(5 7\SLFDO $SSOLFDWLRQV • Commercial and Consumer Systems • 3V DCS1900 (PCS) Cellular Handsets • Portable Battery-Powered Equipment • 3V Dual-Band/Triple-Band Handsets • GPRS Compatible 2 POWER AMPLIFIERS • 3V DCS1800 (PCN) Cellular Handsets
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RF2140
DCS1800
DCS1900
RF2140
DCS1800/1900
1700MHz
2000MHz
10dB/5W
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DIODE SJ 98
Abstract: DIODE SJ 66 MOSFET KV diode sj mosfet for 900V, 6A 2sk3983
Text: 2SK3983-01L,S,SJ FUJI POWER MOSFET 200511 Super FAP-G Series N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] Features High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators DC-DC converters
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2SK3983-01L
00V/2
DIODE SJ 98
DIODE SJ 66
MOSFET KV
diode sj
mosfet for 900V, 6A
2sk3983
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diode sj
Abstract: n-channel 250V power mosfet 2SK3927-01L Diode SJ 56
Text: 2SK3927-01L,S,SJ N-CHANNEL SILICON POWER MOSFET Outline Drawings mm 200406 FUJI POWER MOSFET Super FAP-G Series Features High speed switching No secondary breakdown Avalanche-proof Low on-resistance Low driving power See to P4 Applications Switching regulators
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2SK3927-01L
diode sj
n-channel 250V power mosfet
Diode SJ 56
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2SK3927-01L
Abstract: 1NCF
Text: 2SK3927-01L,S,SJ N-CHANNEL SILICON POWER MOSFET Outline Drawings mm 200406 FUJI POWER MOSFET Super FAP-G Series Features High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power See to P4 Applications Switching regulators
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2SK3927-01L
1NCF
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IC 4558 surround sound circuit
Abstract: ILX554 ICX285AL LCX029amt sony led tv electronic diagram LCX017CLT surround circuit using ic 4558 pin diagram composite to GVIF ILX551A GVIF
Text: FIRST HALF 2 0 0 1 semiconductor product guide Table of Contents CAVD Multimedia Products . . . . . . . . . . . . . . . . . . . . . . . . 2 CCDs Area Sensor — Color . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Area Sensor— Black & White. . . . . . . . . . . . . . . . . . . . . 3
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SBD-PG010101
IC 4558 surround sound circuit
ILX554
ICX285AL
LCX029amt
sony led tv electronic diagram
LCX017CLT
surround circuit using ic 4558 pin diagram
composite to GVIF
ILX551A
GVIF
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RF2 2A 250V
Abstract: No abstract text available
Text: RF2 2-pole Force Guided Relay / SJ Series Socket For simple and easy safety measures - reduce costs and installation space. • 2-pole force guided relay to reduce cost and installation space. • Force guided contact mechanism EN50205 Type A TÜV approved .
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EN50205
UL60947-4-1A
E55996
LR35144
EN50/
EP1471-0
RF2 2A 250V
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Diode SJ 56
Abstract: No abstract text available
Text: 2SK3927-01L,S,SJ N-CHANNEL SILICON POWER MOSFET Outline Drawings mm 200406 FUJI POWER MOSFET Super FAP-G Series Features High speed switching No secondary breakdown Avalanche-proof Low on-resistance Low driving power See to P4 Applications Switching regulators
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2SK3927-01L
Diode SJ 56
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led 5050 rgb datasheet
Abstract: 5050 rgb led GVIF cable ILX511 sony exview camera IC 4558 surround sound circuit CCD LINEAR SENSOR 512 IC PROCESSOR VCT1 ICX205 ccd sony ilx511
Text: F I R S T Q U A R T E R 2 0 0 0 semiconductor product guide Table of Contents CCDs Area Sensor — Color . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Area Sensor— Black & White. . . . . . . . . . . . . . . . . . . . . 3 Area Sensor — Progressive Scan . . . . . . . . . . . . . . . . . . 4
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sj 2519
Abstract: No abstract text available
Text: 2SK3556-01L,S,SJ 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof P4 Applications Switching regulators UPS Uninterruptible Power Supply
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2SK3556-01L
sj 2519
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200V 50A mos fet
Abstract: diode sj n-channel 250V power mosfet 2SK3556-01L
Text: 2SK3556-01L,S,SJ FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof P4 Applications Switching regulators UPS Uninterruptible Power Supply
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2SK3556-01L
200V 50A mos fet
diode sj
n-channel 250V power mosfet
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200V 50A mos fet
Abstract: power supply 100v 30a schematic 2SK3596-01L
Text: 2SK3596-01L,S,SJ FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings mm Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof P4 Applications Switching regulators UPS (Uninterruptible Power Supply)
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2SK3596-01L
200V 50A mos fet
power supply 100v 30a schematic
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Untitled
Abstract: No abstract text available
Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS E6 600V CoolMOS E6 Power Transistor IPx60R520E6 Data Sheet Rev. 2.0, 2010-04-09 Final In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ E6 Power Transistor 1 IPP60R520E6, IPA60R520E6
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IPx60R520E6
IPP60R520E6,
IPA60R520E6
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6R520E6
Abstract: IPA60R520E6 JESD22 TO-220 package thermal resistance 6r520
Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS E6 600V CoolMOS E6 Power Transistor IPx60R520E6 Data Sheet Rev. 2.0, 2010-04-09 Final In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ E6 Power Transistor 1 IPP60R520E6, IPA60R520E6
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IPx60R520E6
IPP60R520E6,
IPA60R520E6
6R520E6
IPA60R520E6
JESD22
TO-220 package thermal resistance
6r520
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6R520E6
Abstract: IPA60R520E6 JESD22
Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS E6 600V CoolMOS E6 Power Transistor IPx60R520E6 Data Sheet Rev. 2.0, 2010-04-09 Final In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ E6 Power Transistor 1 IPP60R520E6, IPA60R520E6
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IPx60R520E6
IPP60R520E6,
IPA60R520E6
6R520E6
IPA60R520E6
JESD22
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Untitled
Abstract: No abstract text available
Text: MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS CFD2650VThinpak 650VCoolMOS™CFD2PowerTransistor IPL65R210CFD DataSheet Rev.2.0 Final Industrial&Multimarket 650VCoolMOS™CFD2PowerTransistor IPL65R210CFD 1Description
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IPL65R210CFD
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI FAST RECOVERY DIODE MODULE RM400DY-66S -wsi sJ«w'','sa'8 HIGH POWER, HIGH SPEED SWITCHING USE INSULATED TYPE HVDi High Voltage Diode Module RM400DY-66S • ID C . 4 0 0 A • V rrm . 3 3 0 0 V
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OCR Scan
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RM400DY-66S
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DO-203AB
Abstract: SBR8210 SBR8215
Text: Schottky OR’ing Diode SBR8210. SBR8215 Dim. Inches M illim eter Minimum Maximum Minimum Maximum Notes -, SJ _i É? I I I II i l „ . J 1 G F » 1 E 1 Notes: 1. Full threads within 2 1 /2 threads 2. Standard Polarity: Stud is Cathode Reverse Polarity: Stud is
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SBR8210,
SBR8215
DO-203AB
SBR8210*
SBR8215*
SBR821
DO-203AB
SBR8210
SBR8215
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diode 1n4637
Abstract: in4632 zener diode in4560 1N41 IN4620 IN4550 IN4624 1n41113 1N4611A IN4619
Text: H H M M M H Z Z Z z z z A * A A A A 2 2 2 2 2 2 M H O M M M z z z A A A 0t W W CO SO 00 sj M H M z z z A A A 0> Ot Ot WWW 9 m A M M M z z z A A A 9 0 lO > CO CO Co W N h MMH* z z z A A A Oi 0 ) 01 co ro ro O lO 00 M z A 01 N) sj M z A 01 N) 01 M M M Z Z Z
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1N4549
1N4550
1N4551
1N4552
1N4553
1N4554
1N4555
1N4556
1N4557
1N4558
diode 1n4637
in4632
zener diode in4560
1N41
IN4620
IN4550
IN4624
1n41113
1N4611A
IN4619
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