d 5072 transistor
Abstract: d 5072 1N6171AUS
Text: SENSITRON SEMICONDUCTOR 1N6138A/US thru 1N6173A/US TECHNICAL DATA DATA SHEET 5072, REV. – SJ SX SV Transient Voltage Suppressor Diode, 1500W • Hermetic, non-cavity glass package • Metallurgically bonded o o • Operating and Storage Temperature: -55 C to +175 C
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1N6138A/US
1N6173A/US
1N6138A/US
1N6139A/US
1N6140A/US
1N6141A/US
1N6142A/US
1N6143A/US
1N6144A/US
1N6145A/US
d 5072 transistor
d 5072
1N6171AUS
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C 5074 transistor
Abstract: No abstract text available
Text: SENSITRON SEMICONDUCTOR 1N6102A/US thru 1N6137A/US TECHNICAL DATA DATA SHEET 5074, REV. – SJ SX SV Transient Voltage Suppressor Diode, 500W • Hermetic, non-cavity glass package • Metallurgically bonded o o • Operating and Storage Temperature: -55 C to +175 C
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1N6102A/US
1N6137A/US
1N6102A/US
1N6103A/US
1N6104A/US
1N6105A/US
1N6106A/US
1N6107A/US
1N6108A/US
1N6109A/US
C 5074 transistor
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1N5629a
Abstract: 1N5645A series 1N5555 1N566 1N5645A 1N5558 1N5630A 1N5631A 1N5632A 1N5633A
Text: SENSITRON SEMICONDUCTOR 1N5555 to 1N5558 1N5907 1N5629A to 1N5665A TECHNICAL DATA DATA SHEET 5164, REV. A SJ SX SV SS Transient Voltage Suppressor Diode, 1500W • Hermetic, non-cavity glass package • Metallurgically bonded o o • Operating and Storage Temperature: -55 C to +175 C
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1N5555
1N5558
1N5907
1N5629A
1N5665A
1N5629A
1N5630A
1N5645A series
1N566
1N5645A
1N5558
1N5630A
1N5631A
1N5632A
1N5633A
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Diode marking MFW
Abstract: MFW diode 95rr DIODE S3K ZW 13 diode YQB marking Marking jx Diode MFW B651 WQ marking
Text: SPB80N10L!M SIPMOSTMPower-Transistor Product Summary Feature RQQ w RetI••J RU Ie YQ b S 2H mfssj q VDS J smfshj rj syrtij Qtln hQj {j q qNupSWTNT 6<: ´H tuj wfyn sl yj ruj wfyzwj F{fqfshmj wfyj i ivP
t wfyj i@M fqtlj s2kwj j fhhtwin sl yt NJ H ;679>27276
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SPB80N10L
Diode marking MFW
MFW diode
95rr
DIODE S3K
ZW 13 diode
YQB marking
Marking jx
Diode MFW
B651
WQ marking
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DIODE marking code SJ
Abstract: Diode SJ marking SJ date diode diode marking SJ diode marking code 4n Sj 35 diode Phototriac Coupler Diode SJ 12 ma 8630 LR35579
Text: SOLID STATE RELAY MAXIMUM LOAD CURRENT 1 A SJ SERIES RoHS compliant n FEATURES UL, CSA recognized Extremely small and light weight —Size: 10.0 W x 20.2 (L) × 12.8 (H) mm —Weight: approximately 5.5g l High reliability, long life and maintenance free
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DIODE marking code SJ
Abstract: diode marking code 4n Diode SJ marking code SJ Phototriac Coupler Transistor SJ 2008 colour code diode zener electronic component dates with photo diode marking SJ Sj 35 diode
Text: SOLID STATE RELAY MAXIMUM LOAD CURRENT 1 A SJ SERIES RoHS compliant n FEATURES UL, CSA recognized Extremely small and light weight —Size: 10.0 W x 20.2 (L) × 12.8 (H) mm —Weight: approximately 5.5g l High reliability, long life and maintenance free
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IC 4558 surround sound circuit
Abstract: ILX554 ICX285AL LCX029amt sony led tv electronic diagram LCX017CLT surround circuit using ic 4558 pin diagram composite to GVIF ILX551A GVIF
Text: FIRST HALF 2 0 0 1 semiconductor product guide Table of Contents CAVD Multimedia Products . . . . . . . . . . . . . . . . . . . . . . . . 2 CCDs Area Sensor — Color . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Area Sensor— Black & White. . . . . . . . . . . . . . . . . . . . . 3
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SBD-PG010101
IC 4558 surround sound circuit
ILX554
ICX285AL
LCX029amt
sony led tv electronic diagram
LCX017CLT
surround circuit using ic 4558 pin diagram
composite to GVIF
ILX551A
GVIF
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RF2 2A 250V
Abstract: No abstract text available
Text: RF2 2-pole Force Guided Relay / SJ Series Socket For simple and easy safety measures - reduce costs and installation space. • 2-pole force guided relay to reduce cost and installation space. • Force guided contact mechanism EN50205 Type A TÜV approved .
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EN50205
UL60947-4-1A
E55996
LR35144
EN50/
EP1471-0
RF2 2A 250V
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led 5050 rgb datasheet
Abstract: 5050 rgb led GVIF cable ILX511 sony exview camera IC 4558 surround sound circuit CCD LINEAR SENSOR 512 IC PROCESSOR VCT1 ICX205 ccd sony ilx511
Text: F I R S T Q U A R T E R 2 0 0 0 semiconductor product guide Table of Contents CCDs Area Sensor — Color . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Area Sensor— Black & White. . . . . . . . . . . . . . . . . . . . . 3 Area Sensor — Progressive Scan . . . . . . . . . . . . . . . . . . 4
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2SK3674-01L
Abstract: DIODE SJ 66
Text: 2SK3674-01L,S,SJ 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications P4 Switching regulators UPS Uninterruptible Power Supply
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2SK3674-01L
DIODE SJ 66
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SPF12
Abstract: No abstract text available
Text: 2SK3774-01L,S,SJ N-CHANNEL SILICON POWER MOSFET Outline Drawings mm 200406 FUJI POWER MOSFET Super FAP-G Series Features High speed switching No secondary breakdown Avalanche-proof Low on-resistance Low driving power See to P4 Applications Switching regulators
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2SK3774-01L
SPF12
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Untitled
Abstract: No abstract text available
Text: 2SK3774-01L,S,SJ N-CHANNEL SILICON POWER MOSFET Outline Drawings mm 200406 FUJI POWER MOSFET Super FAP-G Series Features High speed switching No secondary breakdown Avalanche-proof Low on-resistance Low driving power See to P4 Applications Switching regulators
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2SK3774-01L
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diode sj
Abstract: 2SK3774-01L
Text: 2SK3774-01L,S,SJ N-CHANNEL SILICON POWER MOSFET Outline Drawings mm 200406 FUJI POWER MOSFET Super FAP-G Series Features High speed switching No secondary breakdown Avalanche-proof Low on-resistance Low driving power See to P4 Applications Switching regulators
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2SK3774-01L
diode sj
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Diode SJ 67
Abstract: 2SK3921 diode sj
Text: 2SK3921-01L,S,SJ Super FAP-G Series FUJI POWER MOSFET 200509 N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] Features High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators DC-DC converters
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2SK3921-01L
Diode SJ 67
2SK3921
diode sj
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2SK3921
Abstract: No abstract text available
Text: 2SK3921-01L,S,SJ FUJI POWER MOSFET 200509 Super FAP-G Series N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] Features High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators DC-DC converters
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2SK3921-01L
2SK3921
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2955 mos
Abstract: No abstract text available
Text: 2SK3774-01L,S,SJ FUJI POWER MOSFET 200311 N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators DC-DC converters
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2SK3774-01L
2955 mos
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9393B
Abstract: No abstract text available
Text: SKM 200GB063D 7% V SI WH+ / * 00 ,3&)4?20) 09)%2D2)@ Absolute Maximum Ratings Symbol Conditions IGBT GHF1 7X V SI WH :H 7X V RIJ WH :H¥] Superfast NPT-IGBT Modules SKM 200GB063D 390% ZJJ G SZJ P 7%'0) V [J WH SJJ P _JJ P ` SJ G RJ d0 7%'0) V SI WH SJJ P 7%'0) V eJ WH
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200GB063D
9393B
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diode marking SJ
Abstract: JESD22
Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 650V CoolMOS C6 Power Transistor IPW65R070C6 Data Sheet Rev. 2.0, 2011-03-15 Final Industrial & Multimarket 650V CoolMOS™ C6 Power Transistor 1 IPW65R070C6 Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs,
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IPW65R070C6
diode marking SJ
JESD22
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65C6070
Abstract: infineon MOSFET parameter test diode marking SJ 65C6 ipw65r
Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 650V CoolMOS C6 Power Transistor IPW65R070C6 Data Sheet Rev. 2.0, 2011-03-15 Final Industrial & Multimarket 650V CoolMOS™ C6 Power Transistor 1 IPW65R070C6 Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs,
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IPW65R070C6
726-IPW65R070C6
65C6070
infineon MOSFET parameter test
diode marking SJ
65C6
ipw65r
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6r041c6
Abstract: IPW60R041C6 6r041c6 mosfet data ipw60r041 6R041 infineon MOSFET parameter test JESD22 if444 c6 transistor uc pfc
Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPW60R041C6 Data Sheet Rev. 2.0, 2010-03-29 Final In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ C6 Power Transistor 1 IPW60R041C6 Description
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IPW60R041C6
6r041c6
IPW60R041C6
6r041c6 mosfet data
ipw60r041
6R041
infineon MOSFET parameter test
JESD22
if444
c6 transistor
uc pfc
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65F6080
Abstract: ipw65r080
Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CFD 650V CoolMOS CFD Power Transistor IPW65R080CFD Data Sheet Rev. 2.0, 2011-02-02 Final Industrial & Multimarket 650V CoolMOS™ CFD Power Transistor 1 IPW65R080CFD Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs,
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IPW65R080CFD
65F6080
ipw65r080
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A04MW
Abstract: No abstract text available
Text: SIEMENS SBL51414G/N/Z MEDIUM POWER SBMS1414G/M/Z LOW POWER 1300 nm Emitting, 1550 nm Receiving BiDi Transceiver Optical Module Dimensions in inches mm .676 (17.2) 01 II <2 MD Z? LD 1.41 (36.0) 1.25 ¡32.0) 0.283 (7.2) <a2§3<s.a_ - 0.283 (7.2Ì 10.263 (6.7)1
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SBL51414G/N/Z
SBMS1414G/M/Z
SBL51414G
SBM51414G
SBL51414N
SBM51414N
SBL51414Z
SBM51414Z
BM51414G/N/Z
A04MW
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TA78M05,06,0 8 ~ 1 0,12,15,18,20,24F TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA78M05F, TA78M06F, TA78M08F, TA78M09F, TA78M10F TA78M12F, TA78M15F, TA78M18F, TA78M20F, TA78M24F 0.5 A THREE TERMINAL POSITIVE VOLTAGE REGULATORS 5 Vf 6 Vf 8 Vf 9 Vf 10 Vf 12 Vf 15 Vf 18 Vf 20 Vf 24 V
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TA78M05
TA78M05F,
TA78M06F,
TA78M08F,
TA78M09F,
TA78M10F
TA78M12F,
TA78M15F,
TA78M18F,
TA78M20F,
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Untitled
Abstract: No abstract text available
Text: SEHELAB LTD 37E D • 0133107 0000317 S E iV lE L A B 2N 6799 2N 6800 MOS POWER N-Channel Enhancement Mode Dimensions in mm I 1 / Î 8.5 i i 1 max. i ^ 5.1 .9-4- ^ max mm. ^ • FAST SW ITCH IN G • M O TO R CO NTRO LS • POWER SUPPLIES max. PIN 1 - S o u r c e
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2N6799
2N6800
GDG31Ã
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