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    DIODE SMD FOOTPRINT Search Results

    DIODE SMD FOOTPRINT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE SMD FOOTPRINT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: NTHD3101F Power MOSFET and Schottky Diode −20 V, Fetky, P−Channel, −3.2 A, with 2.2A Schottky Barrier Diode, ChipFET] Features • • • • • • Leadless SMD Package Featuring a MOSFET and Schottky Diode 40% Smaller than TSOP−6 Package Leadless SMD Package Provides Great Thermal Characteristics


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    PDF NTHD3101F Dra17.

    smd marking DA QT

    Abstract: 24W16 C2608 SMD mosfet MARKING code TJ NTHD3133PFT1G
    Text: NTHD3133PF Power MOSFET and Schottky Diode -20 V, FETKYt, P-Channel, -4.4 A, with 3.7 A Schottky Barrier Diode, ChipFETt http://onsemi.com Features •ăLeadless SMD Package Featuring a MOSFET and Schottky Diode •ă40% Smaller than TSOP-6 Package •ăLeadless SMD Package Provides Great Thermal Characteristics


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    PDF NTHD3133PF NTDH3133PF/D smd marking DA QT 24W16 C2608 SMD mosfet MARKING code TJ NTHD3133PFT1G

    Untitled

    Abstract: No abstract text available
    Text: NTHD3133PF Power MOSFET and Schottky Diode -20 V, FETKYt, P-Channel, -4.4 A, with 3.7 A Schottky Barrier Diode, ChipFETt http://onsemi.com Features •ăLeadless SMD Package Featuring a MOSFET and Schottky Diode •ă40% Smaller than TSOP-6 Package •ăLeadless SMD Package Provides Great Thermal Characteristics


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    PDF NTHD3133PF NTDH3133PF/D

    LBAS516T1G

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. High-speed Diode DESCRIPTION The LBAS516T1 is a high-speed switching diode fabricated in planar technology and encapsulated in the SOD523 SC79 SMD plastic package. LBAS516T1G S-LBAS516T1G FEATURES • Ultra small plastic SMD package


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    PDF LBAS516T1 OD523 LBAS516T1G S-LBAS516T1G OD-523 AEC-Q101 LBAS516T1G

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. High-speed Diode DESCRIPTION The LBAS516T1 is a high-speed switching diode fabricated in planar technology,and encapsulated LBAS516T1G in the SOD523 SC79 SMD plastic package. 1 FEATURES • Ultra small plastic SMD package · High switching speed: max. 4 ns


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    PDF LBAS516T1 LBAS516T1G OD523 OD-523 LBAS516T3G

    Untitled

    Abstract: No abstract text available
    Text: Formosa MS SMD Zener Diode MMSZ5221B THRU MMSZ5267B List List. 1 Package outline. 2


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    PDF MMSZ5221B MMSZ5267B MIL-STD-202F METHOD-208 MIL-STD-750D METHOD-1038 JESD22-A102 METHOD-1051 1000hrs.

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. High-speed diode LBAS516T1G DESCRIPTION The LBAS516T1 is a high-speed switching diode fabricated in planar technology, and encapsulated in the SOD523 SC79 SMD plastic package. 1 2 FEATURES • Ultra small plastic SMD package · High switching speed: max. 4 ns


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    PDF LBAS516T1G LBAS516T1 OD523 OD-523 LBAS516T3G

    BAS116H

    Abstract: No abstract text available
    Text: BAS116H 75 V, low leakage diode in small SOD123F package Rev. 01 — 11 April 2005 Product data sheet 1. Product profile 1.1 General description Low leakage switching diode, encapsulated in a SOD123F small SMD plastic package. 1.2 Features • Small and flat lead SMD plastic package


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    PDF BAS116H OD123F BAS116H

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. High-speed diode LBAS516T1G DESCRIPTION The LBAS516T1 is a high-speed switching diode fabricated in planar technology, and encapsulated in the SOD523 SC79 SMD plastic package. 1 2 FEATURES • Ultra small plastic SMD package · High switching speed: max. 4 ns


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    PDF LBAS516T1G LBAS516T1 OD523 OD523 SC-79 LBAS516T

    BAS116H

    Abstract: No abstract text available
    Text: BAS116H 75 V, low leakage diode in small SOD123F package Rev. 02 — 14 December 2009 Product data sheet 1. Product profile 1.1 General description Low leakage switching diode, encapsulated in a SOD123F small SMD plastic package. 1.2 Features „ Small and flat lead SMD plastic package


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    PDF BAS116H OD123F BAS116H

    NTHD4P02F

    Abstract: NTHD4P02FT1 NTHD4P02FT1G
    Text: NTHD4P02F Power MOSFET and Schottky Diode −20 V, −3.0 A, Single P−Channel with 3.0 A Schottky Barrier Diode, ChipFETt Features • Leadless SMD Package Featuring a MOSFET and Schottky Diode • 40% Smaller than TSOP−6 Package with Similar Thermal •


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    PDF NTHD4P02F NTHD4P02F/D NTHD4P02F NTHD4P02FT1 NTHD4P02FT1G

    Untitled

    Abstract: No abstract text available
    Text: NTHD4P02F Power MOSFET and Schottky Diode 20 V, 2.1 A, Single P−Channel with 1.0 A Schottky Barrier Diode, ChipFET] http://onsemi.com Features • Leadless SMD Package Featuring a MOSFET and Schottky Diode • 40% Smaller than TSOP−6 Package with Similar Thermal


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    PDF NTHD4P02F NTHD4P02F/D

    NTHD4P02FT1G

    Abstract: No abstract text available
    Text: NTHD4P02F Power MOSFET and Schottky Diode 20 V, 2.1 A, Single P−Channel with 1.0 A Schottky Barrier Diode, ChipFET] http://onsemi.com Features • Leadless SMD Package Featuring a MOSFET and Schottky Diode • 40% Smaller than TSOP−6 Package with Similar Thermal


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    PDF NTHD4P02F otherwi18. NTHD4P02FT1G

    Untitled

    Abstract: No abstract text available
    Text: NTHD4P02F Power MOSFET and Schottky Diode 20 V, 2.1 A, Single P−Channel with 1.0 A Schottky Barrier Diode, ChipFET] http://onsemi.com Features • Leadless SMD Package Featuring a MOSFET and Schottky Diode • 40% Smaller than TSOP−6 Package with Similar Thermal


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    PDF NTHD4P02F NTHD4P02F/D NTHD4P02F

    Untitled

    Abstract: No abstract text available
    Text: NTHD4P02F Power MOSFET and Schottky Diode −20 V, −3.0 A, Single P−Channel with 3.0 A Schottky Barrier Diode, ChipFETt Features http://onsemi.com • Leadless SMD Package Featuring a MOSFET and Schottky Diode • 40% Smaller than TSOP−6 Package with Similar Thermal


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    PDF NTHD4P02F NTHD4P02F/D

    NTHD3101FT1G

    Abstract: NTHD3101F NTHD3101FT1 TL82
    Text: NTHD3101F Power MOSFET and Schottky Diode −20 V, Fetky, P−Channel, −3.2 A, with 2.2A Schottky Barrier Diode, ChipFET] Features • • • • • • http://onsemi.com Leadless SMD Package Featuring a MOSFET and Schottky Diode 40% Smaller than TSOP−6 Package


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    PDF NTHD3101F NTHD3101F/D NTHD3101FT1G NTHD3101F NTHD3101FT1 TL82

    Untitled

    Abstract: No abstract text available
    Text: NTHD4P02F Power MOSFET and Schottky Diode −20 V, −3.0 A, Single P−Channel with 3.0 A Schottky Barrier Diode, ChipFETt Features • Leadless SMD Package Featuring a MOSFET and Schottky Diode • 40% Smaller than TSOP−6 Package with Similar Thermal •


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    PDF NTHD4P02F NTHD4P02F/D

    NTHD4N02F

    Abstract: NTHD4N02FT1 NTHD4N02FT1G ChipFET
    Text: NTHD4N02F Power MOSFET and Schottky Diode 20 V, 3.9 A, N−Channel, with 3.7 A Schottky Barrier Diode, ChipFETt http://onsemi.com Features • • • • • Leadless SMD Package Featuring a MOSFET and Schottky Diode 40% Smaller than TSOP−6 Package with Better Thermals


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    PDF NTHD4N02F NTHD4N02F/D NTHD4N02F NTHD4N02FT1 NTHD4N02FT1G ChipFET

    Untitled

    Abstract: No abstract text available
    Text: NTHD3101F Power MOSFET and Schottky Diode −20 V, FETKYt, P−Channel, −4.4 A, with 4.1 A Schottky Barrier Diode, ChipFETt http://onsemi.com Features • • • • • • • Leadless SMD Package Featuring a MOSFET and Schottky Diode 40% Smaller than TSOP−6 Package


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    PDF NTHD3101F NTDH3101F/D

    Untitled

    Abstract: No abstract text available
    Text: NTHD3101F Power MOSFET and Schottky Diode −20 V, Fetky, P−Channel, −4.4 A, with 4.1 A Schottky Barrier Diode, ChipFETt Features • • • • • • • http://onsemi.com Leadless SMD Package Featuring a MOSFET and Schottky Diode 40% Smaller than TSOP−6 Package


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    PDF NTHD3101F NTDH3101F/D

    Untitled

    Abstract: No abstract text available
    Text: NTHD4N02F Power MOSFET and Schottky Diode 20 V, 3.9 A, N−Channel, with 3.7 A Schottky Barrier Diode, ChipFETt http://onsemi.com Features • • • • • Leadless SMD Package Featuring a MOSFET and Schottky Diode 40% Smaller than TSOP−6 Package with Better Thermals


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    PDF NTHD4N02F NTHD4N02F/D

    NTHD4N02F

    Abstract: NTHD4N02FT1 NTHD4N02FT1G 5M MARKING CODE SCHOTTKY DIODE
    Text: NTHD4N02F Power MOSFET and Schottky Diode 20 V, 3.9 A, N−Channel, with 3.7 A Schottky Barrier Diode, ChipFETt http://onsemi.com Features • • • • • Leadless SMD Package Featuring a MOSFET and Schottky Diode 40% Smaller than TSOP−6 Package with Better Thermals


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    PDF NTHD4N02F NTHD4N02F/D NTHD4N02F NTHD4N02FT1 NTHD4N02FT1G 5M MARKING CODE SCHOTTKY DIODE

    Untitled

    Abstract: No abstract text available
    Text: NTHD4N02F Power MOSFET and Schottky Diode 20 V, 2.7 A, N−Channel, with 1.0 A Schottky Barrier Diode, ChipFET http://onsemi.com Features • • • • • Leadless SMD Package Featuring a MOSFET and Schottky Diode 40% Smaller than TSOP−6 Package with Better Thermals


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    PDF NTHD4N02F NTHD4N02F/D

    NTHD3101FT1

    Abstract: NTHD3101FT1G NTHD3101F NTHD3101FT3 NTHD3101FT3G
    Text: NTHD3101F Power MOSFET and Schottky Diode −20 V, FETKYt, P−Channel, −4.4 A, with 4.1 A Schottky Barrier Diode, ChipFETt http://onsemi.com Features • • • • • • • Leadless SMD Package Featuring a MOSFET and Schottky Diode 40% Smaller than TSOP−6 Package


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    PDF NTHD3101F NTDH3101F/D NTHD3101FT1 NTHD3101FT1G NTHD3101F NTHD3101FT3 NTHD3101FT3G