Q62702-A1190
Abstract: No abstract text available
Text: BAT 165 Silicon Schottky Diode Preliminary data • Low-power Schottky rectifier diode • Miniature plastic package for surface 2 mounting SMD 1 VPS05176 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code
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VPS05176
Q62702-A1190
OD-323
50/60Hz,
temper998
Sep-04-1998
Q62702-A1190
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Untitled
Abstract: No abstract text available
Text: Diode Network / ESD Suppressor COMCHIP SMD DIODE SPECIALIST CDA4S14G RoHS Device Voltage: 13 Volts Current: 50 mA Package (SOT-143) Feature Marking “ CDA4 “ This diode network is designed to provide two channels for active termination of highspeed data signals to eliminate signal
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CDA4S14G
OT-143)
MDS0903003A
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smd diode marking code u6
Abstract: smd diode code u6 diode marking code U6 SMD ZENER DIODE u6 KSD-D6C014-000 U6 SOD u6 code marking code U6
Text: SDZ3V3D Semiconductor Zener Diode Applications • Constant voltage regulation • Reference voltage application Features • Small and compact SMD package used: SOD-323 • Surface mount lead configuration Ordering Information Type NO. SDZ3V3D Marking Package Code
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OD-323
KSD-D6C014-000
smd diode marking code u6
smd diode code u6
diode marking code U6
SMD ZENER DIODE u6
KSD-D6C014-000
U6 SOD
u6 code
marking code U6
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smd zener diode code y9
Abstract: Y9 smd diode smd y9 y9 smd diode SDZ24V case marking y9
Text: SDZ24V Semiconductor Zener Diode Applications • Constant voltage regulation • Reference voltage application Features • Small and compact SMD package used: SOT-23 • Surface mount lead configuration Ordering Information Type NO. SDZ24V Marking Package Code
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SDZ24V
OT-23
KSD-D5C020-000
smd zener diode code y9
Y9 smd
diode smd y9
y9 smd diode
SDZ24V
case marking y9
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smd diode code T9
Abstract: SMD MARKING CODE 24 SMD MARKING T9
Text: BB182WT VHF VARIABLE CAPACITANCE DIODE FEATURES PINNING High linearity DESCRIPTION PIN Excellent matching to 2% DMA Ultra small plastic SMD package 1 Cathode 2 Anode C28: 2.7 pF ; ratio:22 Low series resistance 2 1 T9 APPLICATIONS ˙ Top View Marking Code: "T9"
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Original
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BB182WT
OD-523
BB182WT
100MHz
OD-523
smd diode code T9
SMD MARKING CODE 24
SMD MARKING T9
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smd diode code T9
Abstract: BB182WT SMD MARKING CODE 24 marking 24 SOD523
Text: BB182WT VHF VARIABLE CAPACITANCE DIODE FEATURES PINNING High linearity DESCRIPTION PIN Excellent matching to 2% DMA Ultra small plastic SMD package 1 Cathode 2 Anode C28: 2.7 pF ; ratio:22 Low series resistance 2 1 T9 APPLICATIONS ˙ Top View Marking Code: "T9"
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BB182WT
OD-523
BB182WT
100MHz
OD-523
smd diode code T9
SMD MARKING CODE 24
marking 24 SOD523
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Switching Diode FEATURE LBAS16HT1G ƽSmall plastic SMD package. ƽContinuous reverse voltage: max. 75 V. ƽHigh-speed switching in hybrid thick and thin-film circuits. 1 ƽPb-Free Package is available. DEVICE MARKING AND ORDERING INFORMATION
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LBAS16HT1G
3000/Tape
LBAS16HT3G
10000/Tape
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Untitled
Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBD914 HIGH SPEED SWITCHING DIODE Marking CMBD914 = 5D PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration 1 = ANODE 2 = NC 3 = CATHODE
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OT-23
CMBD914
C-120
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smd diode marking 5d
Abstract: smd diode 5d diode 5d smd diode smd marking 5D smd transistor marking 5D CMBD914
Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company SOT-23 Formed SMD Package CMBD914 HIGH SPEED SWITCHING DIODE Marking CMBD914 = 5D PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration 1 = ANODE 2 = NC 3 = CATHODE 2 1
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ISO/TS16949
OT-23
CMBD914
C-120
smd diode marking 5d
smd diode 5d
diode 5d smd
diode smd marking 5D
smd transistor marking 5D
CMBD914
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CMBD914
Abstract: smd diode marking 5d 5d smd sot-23 smd transistor 5d sot-23
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBD914 HIGH SPEED SWITCHING DIODE Marking CMBD914 = 5D Pin configuration 1 = ANODE 2 = NC 3 = CATHODE 2 1 3 ABSOLUTE MAXIMUM RATINGS Continuous reverse voltage
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OT-23
CMBD914
C-120
CMBD914
smd diode marking 5d
5d smd sot-23
smd transistor 5d sot-23
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Untitled
Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBD914 HIGH SPEED SWITCHING DIODE Marking CMBD914 = 5D Pin configuration 1 = ANODE 2 = NC 3 = CATHODE 2 1 3 ABSOLUTE MAXIMUM RATINGS Continuous reverse voltage
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OT-23
CMBD914
C-120
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Untitled
Abstract: No abstract text available
Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer SOT-23 Formed SMD Package CMBD914 HIGH SPEED SWITCHING DIODE Marking CMBD914 = 5D PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm
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OT-23
CMBD914
C-120
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diode SMD MARKING CODE JV
Abstract: smd marking code diode MARKING CODE jv smd marking codes list "switching Diode" JV SOT-23 marking code jv Marking Code SMD transistors smd diode marking code SMD MARKING CODE transistor
Text: BAS116 LOW LEAKAGE SWITCHING DIODE Features • Plastic SMD package • Low leakage current • High switching speed 3 2 1 Marking Code: JV SOT-23 Plastic Package Application • Low leakage current applications in surface mounted circuits. Absolute Maximum Ratings Ta = 25 OC
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BAS116
OT-23
diode SMD MARKING CODE JV
smd marking code
diode MARKING CODE jv
smd marking codes list
"switching Diode"
JV SOT-23
marking code jv
Marking Code SMD transistors
smd diode marking code
SMD MARKING CODE transistor
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Untitled
Abstract: No abstract text available
Text: Comchip SMD Super Fast Recovery Rectifiers SMD Diode Specialist SF1005-G Thru. SF1060-G Reverse Voltage: 50 to 600 Volts Forward Current: 10 Amp RoHS Device Features ITO-220AB -Low power loss,high efficiency. -Low power voltage,high current capability. -High surge capacity.
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SF1005-G
SF1060-G
ITO-220AB
2002/95/EC
MIL-S-19500/228
94-V0
ITO-220AC
QW-BS006
SF1005-G
EF1005
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mbr20400
Abstract: No abstract text available
Text: Comchip SMD Schottky Barrier Rectifiers SMD Diode Specialist MBR2030CT-G Thru. MBR20150CT-G Voltage: 30 to 150 V Current: 20.0 A RoHS Device Features TO-220AB -Metal of silicon rectifier, majority carrier conduction. -Guard ring for transient protection. -Low power loss, high efficiency.
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MBR2030CT-G
MBR20150CT-G
O-220AB
O-220AB,
MBR2030CT-G~
MBR20400CT-G
QW-BB046
MBR2030CT-G
MBR2030CT
MBR2040CT-G
mbr20400
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SR2030CT-G
Abstract: SR2040CT-G SR2050CT-G SR2060CT-G SR2080CT-G SR20100CT-G SR20150CT-G
Text: Comchip Schottky Barrier Rectifiers SMD Diode Specialist SR2030CT-G Thru. SR20150CT-G Voltage: 30 to 150 V Current: 20.0 A RoHS Device Features TO-220AB -Metal of silicon rectifier, majority carrier conduction. -Guard ring for transient protection. -Low power loss, high efficiency.
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SR2030CT-G
SR20150CT-G
O-220AB
O-220AB,
QW-BB056
SR2030CT-G
SR2030CT
SR2040CT-G
SR2040CT
SR2050CT-G
SR2040CT-G
SR2050CT-G
SR2060CT-G
SR2080CT-G
SR20100CT-G
SR20150CT-G
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smd diode S6
Abstract: smd diode S4 S4 DIODE SMD MARKING g5 smd diode g5 smd diode g6 Diode S4 g1 smd diode S3 marking DIODE SMD MARKING s6
Text: GWM 220-004P3 Three phase full Bridge VDSS = 40 V =1 80 A ID25 RDSon typ. = 2.0 mW with Trench MOSFETs in DCB isolated high current package Preliminary data L+ G1 S1 G2 S2 G3 G5 S3 S5 L1 L2 L3 G4 G6 S4 S6 L- Symbol Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings
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220-004P3
220-003P3-SMD
220-004P3
20081126f
smd diode S6
smd diode S4
S4 DIODE
SMD MARKING g5
smd diode g5
smd diode g6
Diode S4
g1 smd diode
S3 marking DIODE
SMD MARKING s6
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Untitled
Abstract: No abstract text available
Text: Schottky Barrier Rectifiers SR2030CT-G Thru. SR20150CT-G Comchip SMD Diode Specialist Voltage: 30 to 150 V Current: 20.0 A RoHS Device Features TO-220AB -Metal of silicon rectifier, majority carrier conduction. -Guard ring for transient protection. -Low power loss, high efficiency.
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SR2030CT-G
SR20150CT-G
O-220AB
O-220AB
QW-BB056
SR2030CT-G
SR2030CT
SR2040CT-G
SR2040CT
SR2050CT-G
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smd diode S4
Abstract: No abstract text available
Text: GWM 220-004P3 Three phase full Bridge VDSS = 40 V ID25 = 190 A RDSon typ. = 2.0 mW with Trench MOSFETs in DCB isolated high current package Preliminary data L+ G1 S1 G2 S2 G3 G5 S3 S5 L1 L2 L3 G4 G6 S4 S6 L- Symbol Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings
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220-004P3
100-01X1-SMD
220-004P3
20070906c
smd diode S4
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smd diode g6
Abstract: smd S4 36 SMD diode MARKING CODE g6 smd g5
Text: GWM 220-004P3 Three phase full Bridge VDSS = 40 V ID25 = 190 A RDSon typ. = 2.0 mW with Trench MOSFETs in DCB isolated high current package Preliminary data L+ G1 S1 G2 S2 G3 G5 S3 S5 L1 L2 L3 G4 G6 S4 S6 L- Symbol Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings
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220-004P3
220-003P3-SMD
220-004P3
20080527e
smd diode g6
smd S4 36
SMD diode MARKING CODE g6
smd g5
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smd marking code 8A
Abstract: No abstract text available
Text: Comchip General Purpose Rectifiers SMD Diode Specialist CGR860T-G Reverse Voltage: 600 V Forward Current: 8.0 A RoHS Device Features TO-220AC -Soft recovery characteristic. 0.108 2.75 -Low forward voltage. -Low recovery loss. 0.413(10.50) 0.374( 9.50) 0.153(3.90)
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CGR860T-G
O-220AC
O-220AC,
50eristics
QW-BG020
8FR060T
smd marking code 8A
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CGR860T-G
Abstract: General Purpose Rectifier
Text: Comchip General Purpose Rectifiers SMD Diode Specialist CGR860T-G Reverse Voltage: 600 V Forward Current: 8.0 A RoHS Device Features TO-220AC -Soft recovery characteristic. 0.108 2.75 -Low forward voltage. -Low recovery loss. 0.413(10.50) 0.374( 9.50) 0.153(3.90)
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CGR860T-G
O-220AC
O-220AC,
QW-BG020
8FR060T
CGR860T-G
General Purpose Rectifier
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Untitled
Abstract: No abstract text available
Text: Comchip Efficient Fast Recovery Rectifiers SMD Diode Specialist CEF860LT-G Reverse Voltage: 600 V Forward Current: 8.0 A RoHS Device Features TO-220AC -Soft recovery characteristic. 0.108 2.75 -Low forward voltage. -Low recovery loss. 0.413(10.50) 0.374( 9.50)
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CEF860LT-G
O-220AC
O-220AC,
QW-BE011
8LFR060T
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smd diode S4
Abstract: smd diode code g3 SMD MARKING CODE 503 K smd diode S6 S4 DIODE S6 diode smd diode marking code L2 SMD MARKING g3 smd diode code s6 SMD MARKING g5
Text: GWM 220-004P3 Three phase full Bridge VDSS = 40 V ID25 = 190 A RDSon typ. = 2.0 mW with Trench MOSFETs in DCB isolated high current package Preliminary data L+ G1 S1 G2 S2 G3 G5 S3 S5 L1 L2 L3 G4 G6 S4 S6 L- Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings
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220-004P3
diod007
20070628b
220-004P3-SL
220-04P3-BL
220-004P3
smd diode S4
smd diode code g3
SMD MARKING CODE 503 K
smd diode S6
S4 DIODE
S6 diode
smd diode marking code L2
SMD MARKING g3
smd diode code s6
SMD MARKING g5
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